DE1050868B - - Google Patents
Info
- Publication number
- DE1050868B DE1050868B DENDAT1050868D DE1050868DA DE1050868B DE 1050868 B DE1050868 B DE 1050868B DE NDAT1050868 D DENDAT1050868 D DE NDAT1050868D DE 1050868D A DE1050868D A DE 1050868DA DE 1050868 B DE1050868 B DE 1050868B
- Authority
- DE
- Germany
- Prior art keywords
- magnetic field
- resistance
- semiconductor
- bodies
- different
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000001419 dependent Effects 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 8
- WPYVAWXEWQSOGY-UHFFFAOYSA-N Indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N Indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims description 2
- 230000037230 mobility Effects 0.000 claims 3
- 238000004381 surface treatment Methods 0.000 claims 2
- 238000004804 winding Methods 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZFIVKAOQEXOYFY-UHFFFAOYSA-N butadiene bisoxide Chemical compound C1OC1C1OC1 ZFIVKAOQEXOYFY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000005712 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000051 modifying Effects 0.000 description 1
- 230000000737 periodic Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B1/00—Comparing elements, i.e. elements for effecting comparison directly or indirectly between a desired value and existing or anticipated values
- G05B1/01—Comparing elements, i.e. elements for effecting comparison directly or indirectly between a desired value and existing or anticipated values electric
- G05B1/02—Comparing elements, i.e. elements for effecting comparison directly or indirectly between a desired value and existing or anticipated values electric for comparing analogue signals
- G05B1/027—Comparing elements, i.e. elements for effecting comparison directly or indirectly between a desired value and existing or anticipated values electric for comparing analogue signals using impedance bridges
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Measuring Magnetic Variables (AREA)
Publications (1)
Publication Number | Publication Date |
---|---|
DE1050868B true DE1050868B (US20110009641A1-20110113-C00116.png) |
Family
ID=591176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DENDAT1050868D Pending DE1050868B (US20110009641A1-20110113-C00116.png) |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE1050868B (US20110009641A1-20110113-C00116.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2851330A1 (de) * | 1977-11-29 | 1979-06-07 | Asahi Chemical Ind | Magnetoresistives halbleiterelement |
-
0
- DE DENDAT1050868D patent/DE1050868B/de active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2851330A1 (de) * | 1977-11-29 | 1979-06-07 | Asahi Chemical Ind | Magnetoresistives halbleiterelement |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2235783C2 (de) | Metalloxid-Varistorelement | |
DE3136682C2 (US20110009641A1-20110113-C00116.png) | ||
DE1104032B (de) | Halbleiteranordnung mit nichtlinearer Widerstandskennlinie und Schaltungsanordnung unter Verwendung einer solchen Halbleiter-anordnung | |
DE1283399B (de) | Feldeffekt-Transistor mit zwei ohmschen Elektroden und mit einer isolierten Steuerelektrode | |
DE2247643C2 (de) | Varistor mit mindestens drei Elektroden | |
DE2326731B2 (de) | Halbleiteranordnung mit mehreren hall- elementen | |
DE2027909A1 (de) | Halbleiterverformungsmeßvorrichtung mit steuerbarer Empfindlichkei | |
DE2431129C3 (de) | Elektrolumineszierende Halbleiteranordnung | |
EP0000863A1 (de) | Temperaturkompensierter integrierter Halbleiterwiderstand | |
DE2044884A1 (de) | Magnetisch betriebene Halbleiter vorrichtung | |
DE2021489A1 (de) | Integrierte Halbleiterschaltung | |
DE3002897C2 (de) | Thyristor | |
DE1050868B (US20110009641A1-20110113-C00116.png) | ||
DE2158270C3 (de) | Kontaktloser Schalter mit einem Feldeffekt-Thyristor | |
DE2818584C2 (de) | Sperrschicht-Feldeffekttransistor vom vertikalen Typ | |
DE1212221B (de) | Halbleiterbauelement mit einem scheibenfoermigen Halbleiterkoerper und zwei sperrfreien Basiselektroden | |
DE2855816C2 (de) | Integrierte Halbleiterschaltungsanordnung mit einer Schottky-Sperrschichtdiode | |
DE2617481A1 (de) | Halleffekt-bauelement | |
DE1573513A1 (de) | Piezoresistiver Druckwandler | |
DE2407407C2 (de) | Halbleiterbauelement | |
DE4124773C2 (de) | Josephson-Element aus supraleitender Keramik mit perowskitähnlicher Struktur und Verfahren zu seiner Herstellung | |
DE2106821A1 (de) | Halbleitervorrichtung | |
DE2250011A1 (de) | Metalloxidvaristor-potentiometer | |
DE2246954A1 (de) | Halbleiteranordnung | |
EP0010125A1 (de) | Integriertes Hall-Bauelement |