DE1038303T1 - Gemusterte widerstand für eine elektronenemittierende vorrichtung und herstellungsverfahren dafür - Google Patents

Gemusterte widerstand für eine elektronenemittierende vorrichtung und herstellungsverfahren dafür

Info

Publication number
DE1038303T1
DE1038303T1 DE1038303T DE98956230T DE1038303T1 DE 1038303 T1 DE1038303 T1 DE 1038303T1 DE 1038303 T DE1038303 T DE 1038303T DE 98956230 T DE98956230 T DE 98956230T DE 1038303 T1 DE1038303 T1 DE 1038303T1
Authority
DE
Germany
Prior art keywords
electron
emitting device
production method
method therefor
patterned resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1038303T
Other languages
English (en)
Inventor
M Cleeves
J Spindt
W Barton
K Chakravorty
J Learn
J Oberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Candescent Technologies Inc
Original Assignee
Candescent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Candescent Technologies Inc filed Critical Candescent Technologies Inc
Publication of DE1038303T1 publication Critical patent/DE1038303T1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/467—Control electrodes for flat display tubes, e.g. of the type covered by group H01J31/123
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
DE1038303T 1997-10-31 1998-10-27 Gemusterte widerstand für eine elektronenemittierende vorrichtung und herstellungsverfahren dafür Pending DE1038303T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/962,230 US6144144A (en) 1997-10-31 1997-10-31 Patterned resistor suitable for electron-emitting device
PCT/US1998/022717 WO1999023679A1 (en) 1997-10-31 1998-10-27 Patterned resistor suitable for electron-emitting device, and associated fabrication method

Publications (1)

Publication Number Publication Date
DE1038303T1 true DE1038303T1 (de) 2001-04-19

Family

ID=25505573

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1038303T Pending DE1038303T1 (de) 1997-10-31 1998-10-27 Gemusterte widerstand für eine elektronenemittierende vorrichtung und herstellungsverfahren dafür
DE69838985T Expired - Lifetime DE69838985T2 (de) 1997-10-31 1998-10-27 Gemusterte widerstand für eine elektronenemittierende vorrichtung und herstellungsverfahren dafür

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69838985T Expired - Lifetime DE69838985T2 (de) 1997-10-31 1998-10-27 Gemusterte widerstand für eine elektronenemittierende vorrichtung und herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US6144144A (de)
EP (1) EP1038303B1 (de)
JP (1) JP2003520386A (de)
KR (1) KR100403060B1 (de)
DE (2) DE1038303T1 (de)
WO (1) WO1999023679A1 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6015323A (en) * 1997-01-03 2000-01-18 Micron Technology, Inc. Field emission display cathode assembly government rights
US6822386B2 (en) * 1999-03-01 2004-11-23 Micron Technology, Inc. Field emitter display assembly having resistor layer
JP2000260571A (ja) * 1999-03-11 2000-09-22 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
JP2001007290A (ja) * 1999-06-24 2001-01-12 Mitsubishi Electric Corp 半導体装置、半導体装置の製造方法、および、通信方法
JP2001110575A (ja) * 1999-10-04 2001-04-20 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
US6384520B1 (en) * 1999-11-24 2002-05-07 Sony Corporation Cathode structure for planar emitter field emission displays
US6989631B2 (en) * 2001-06-08 2006-01-24 Sony Corporation Carbon cathode of a field emission display with in-laid isolation barrier and support
US7064500B2 (en) * 2000-05-26 2006-06-20 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6407516B1 (en) 2000-05-26 2002-06-18 Exaconnect Inc. Free space electron switch
US6545425B2 (en) 2000-05-26 2003-04-08 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US6800877B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6801002B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US6448717B1 (en) * 2000-07-17 2002-09-10 Micron Technology, Inc. Method and apparatuses for providing uniform electron beams from field emission displays
US6611093B1 (en) * 2000-09-19 2003-08-26 Display Research Laboratories, Inc. Field emission display with transparent cathode
JP4649739B2 (ja) * 2001-01-09 2011-03-16 ソニー株式会社 冷陰極電界電子放出素子の製造方法
JP2002260524A (ja) * 2001-03-06 2002-09-13 Nippon Hoso Kyokai <Nhk> 冷陰極電子源とそれを用いて構成した撮像装置、表示装置
US7002290B2 (en) * 2001-06-08 2006-02-21 Sony Corporation Carbon cathode of a field emission display with integrated isolation barrier and support on substrate
US6624590B2 (en) * 2001-06-08 2003-09-23 Sony Corporation Method for driving a field emission display
US6682382B2 (en) * 2001-06-08 2004-01-27 Sony Corporation Method for making wires with a specific cross section for a field emission display
US6663454B2 (en) * 2001-06-08 2003-12-16 Sony Corporation Method for aligning field emission display components
US6756730B2 (en) * 2001-06-08 2004-06-29 Sony Corporation Field emission display utilizing a cathode frame-type gate and anode with alignment method
JP4810010B2 (ja) * 2001-07-03 2011-11-09 キヤノン株式会社 電子放出素子
JP2003217482A (ja) * 2002-01-17 2003-07-31 Hitachi Ltd 表示装置
US7071603B2 (en) * 2002-02-20 2006-07-04 Cdream Corporation Patterned seed layer suitable for electron-emitting device, and associated fabrication method
US7053538B1 (en) 2002-02-20 2006-05-30 Cdream Corporation Sectioned resistor layer for a carbon nanotube electron-emitting device
US6747416B2 (en) * 2002-04-16 2004-06-08 Sony Corporation Field emission display with deflecting MEMS electrodes
US6791278B2 (en) * 2002-04-16 2004-09-14 Sony Corporation Field emission display using line cathode structure
US6873118B2 (en) * 2002-04-16 2005-03-29 Sony Corporation Field emission cathode structure using perforated gate
TWI224880B (en) * 2002-07-25 2004-12-01 Sanyo Electric Co Organic electroluminescence display device
US7175494B1 (en) 2002-08-22 2007-02-13 Cdream Corporation Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device
US20040037972A1 (en) * 2002-08-22 2004-02-26 Kang Simon Patterned granulized catalyst layer suitable for electron-emitting device, and associated fabrication method
US6803708B2 (en) * 2002-08-22 2004-10-12 Cdream Display Corporation Barrier metal layer for a carbon nanotube flat panel display
US7012582B2 (en) * 2002-11-27 2006-03-14 Sony Corporation Spacer-less field emission display
US6984535B2 (en) * 2002-12-20 2006-01-10 Cdream Corporation Selective etching of a protective layer to form a catalyst layer for an electron-emitting device
US20040145299A1 (en) * 2003-01-24 2004-07-29 Sony Corporation Line patterned gate structure for a field emission display
US7071629B2 (en) * 2003-03-31 2006-07-04 Sony Corporation Image display device incorporating driver circuits on active substrate and other methods to reduce interconnects
US20040189552A1 (en) * 2003-03-31 2004-09-30 Sony Corporation Image display device incorporating driver circuits on active substrate to reduce interconnects
US20050236963A1 (en) * 2004-04-15 2005-10-27 Kang Sung G Emitter structure with a protected gate electrode for an electron-emitting device
US7394110B2 (en) * 2006-02-06 2008-07-01 International Business Machines Corporation Planar vertical resistor and bond pad resistor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US5142184B1 (en) * 1990-02-09 1995-11-21 Motorola Inc Cold cathode field emission device with integral emitter ballasting
FR2663462B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
JP2626276B2 (ja) * 1991-02-06 1997-07-02 双葉電子工業株式会社 電子放出素子
FR2716571B1 (fr) * 1994-02-22 1996-05-03 Pixel Int Sa Procédé de fabrication de cathode d'écran fluorescent à micropointes et produit obtenu par ce procédé .
FR2687839B1 (fr) * 1992-02-26 1994-04-08 Commissariat A Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source.
WO1994020975A1 (en) * 1993-03-11 1994-09-15 Fed Corporation Emitter tip structure and field emission device comprising same, and method of making same
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
JP2699827B2 (ja) * 1993-09-27 1998-01-19 双葉電子工業株式会社 電界放出カソード素子
KR100225561B1 (ko) * 1993-11-29 1999-10-15 니시무로 아츠시 전계방출형 전자원
FR2725072A1 (fr) * 1994-09-28 1996-03-29 Pixel Int Sa Protection electrique d'une anode d'ecran plat de visualisation
US5569975A (en) * 1994-11-18 1996-10-29 Texas Instruments Incorporated Cluster arrangement of field emission microtips
US5458520A (en) * 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure
US5672933A (en) * 1995-10-30 1997-09-30 Texas Instruments Incorporated Column-to-column isolation in fed display
US5828163A (en) * 1997-01-13 1998-10-27 Fed Corporation Field emitter device with a current limiter structure

Also Published As

Publication number Publication date
DE69838985T2 (de) 2008-12-24
EP1038303B1 (de) 2008-01-09
US6144144A (en) 2000-11-07
DE69838985D1 (de) 2008-02-21
WO1999023679A1 (en) 1999-05-14
KR100403060B1 (ko) 2003-10-23
EP1038303A1 (de) 2000-09-27
KR20010031483A (ko) 2001-04-16
JP2003520386A (ja) 2003-07-02
EP1038303A4 (de) 2002-04-24

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