DE10334779A1 - Halbleiterspeichermodul - Google Patents
Halbleiterspeichermodul Download PDFInfo
- Publication number
- DE10334779A1 DE10334779A1 DE10334779A DE10334779A DE10334779A1 DE 10334779 A1 DE10334779 A1 DE 10334779A1 DE 10334779 A DE10334779 A DE 10334779A DE 10334779 A DE10334779 A DE 10334779A DE 10334779 A1 DE10334779 A1 DE 10334779A1
- Authority
- DE
- Germany
- Prior art keywords
- loop
- row
- buffer chip
- semiconductor memory
- memory module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Abstract
Die Erfindung betrifft ein Halbleiterspeichermodul (100) mit mehreren Speicherchips (1-8) und wenigstens einem Taktsignale (CLK) und Befehls- und Adresssignale (C/A) zu den Speicherchips (1-8) sowie Datensignale (Daten) zu und von den Speicherchips (1-8) über einen modulinternen Takt-, Adress-, Befehls- und Datensignalbus treibenden/empfangenden Pufferchip (10), der eine Schnittstelle zu einem äußeren Speicherhauptbus bildet, wobei die Speicherchips (1-8), ausgehend vom Pufferchip (10), in wenigstens einer Reihe (I, II) angeordnet und mit diesem durch den modulinternen Bus verbunden sind. Die Speicherchips (1-8) weisen jeweils getrennte Schreib- und Lesetaktsignaleingänge zum Empfang der Taktsignale (CLK) auf und die Taktsignalleitungen (CLK) sind in mindestens einer Schleife (S) vom Pufferchip (10) über die Speicherchips (1-8) bis zum Ende jeder Reihe (I, II) und von dort zurück zum Pufferchip (10) geführt, wobei die Speicherchips (1-8) beim Datenschreiben durch die vom Pufferchip (10) abgehenden Taktsignale (CLK), die an ihren Schreibtaktsignaleingängen empfangen werden, getaktet und beim Datenlesen durch die zum Pufferchip (10) zurücklaufenden Taktsignale, die an den Lesetaktsignaleingängen der Speicherchips (1-8) empfangen werden, getaktet werden.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10334779A DE10334779B4 (de) | 2003-07-30 | 2003-07-30 | Halbleiterspeichermodul |
US10/909,205 US6972981B2 (en) | 2003-07-30 | 2004-07-30 | Semiconductor memory module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10334779A DE10334779B4 (de) | 2003-07-30 | 2003-07-30 | Halbleiterspeichermodul |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10334779A1 true DE10334779A1 (de) | 2005-03-10 |
DE10334779B4 DE10334779B4 (de) | 2005-09-29 |
Family
ID=34177238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10334779A Expired - Fee Related DE10334779B4 (de) | 2003-07-30 | 2003-07-30 | Halbleiterspeichermodul |
Country Status (2)
Country | Link |
---|---|
US (1) | US6972981B2 (de) |
DE (1) | DE10334779B4 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112005002261B4 (de) | 2004-09-30 | 2019-04-11 | Intel Corporation | Gepufferter kontinuierlicher Mehrpunkt-Taktring |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100468761B1 (ko) * | 2002-08-23 | 2005-01-29 | 삼성전자주식회사 | 분할된 시스템 데이터 버스에 연결되는 메모리 모듈을구비하는 반도체 메모리 시스템 |
US7387827B2 (en) | 2002-12-17 | 2008-06-17 | Intel Corporation | Interconnection designs and materials having improved strength and fatigue life |
US7210059B2 (en) | 2003-08-19 | 2007-04-24 | Micron Technology, Inc. | System and method for on-board diagnostics of memory modules |
US7310752B2 (en) | 2003-09-12 | 2007-12-18 | Micron Technology, Inc. | System and method for on-board timing margin testing of memory modules |
US7120743B2 (en) | 2003-10-20 | 2006-10-10 | Micron Technology, Inc. | Arbitration system and method for memory responses in a hub-based memory system |
US7216196B2 (en) | 2003-12-29 | 2007-05-08 | Micron Technology, Inc. | Memory hub and method for memory system performance monitoring |
US7310748B2 (en) | 2004-06-04 | 2007-12-18 | Micron Technology, Inc. | Memory hub tester interface and method for use thereof |
US8327104B2 (en) | 2006-07-31 | 2012-12-04 | Google Inc. | Adjusting the timing of signals associated with a memory system |
US8090897B2 (en) | 2006-07-31 | 2012-01-03 | Google Inc. | System and method for simulating an aspect of a memory circuit |
US7386656B2 (en) * | 2006-07-31 | 2008-06-10 | Metaram, Inc. | Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit |
US9507739B2 (en) | 2005-06-24 | 2016-11-29 | Google Inc. | Configurable memory circuit system and method |
US8081474B1 (en) | 2007-12-18 | 2011-12-20 | Google Inc. | Embossed heat spreader |
US8244971B2 (en) | 2006-07-31 | 2012-08-14 | Google Inc. | Memory circuit system and method |
US20080028136A1 (en) | 2006-07-31 | 2008-01-31 | Schakel Keith R | Method and apparatus for refresh management of memory modules |
US8335894B1 (en) | 2008-07-25 | 2012-12-18 | Google Inc. | Configurable memory system with interface circuit |
US8060774B2 (en) | 2005-06-24 | 2011-11-15 | Google Inc. | Memory systems and memory modules |
US8130560B1 (en) | 2006-11-13 | 2012-03-06 | Google Inc. | Multi-rank partial width memory modules |
US8169233B2 (en) | 2009-06-09 | 2012-05-01 | Google Inc. | Programming of DIMM termination resistance values |
US9171585B2 (en) | 2005-06-24 | 2015-10-27 | Google Inc. | Configurable memory circuit system and method |
US10013371B2 (en) | 2005-06-24 | 2018-07-03 | Google Llc | Configurable memory circuit system and method |
US9542352B2 (en) | 2006-02-09 | 2017-01-10 | Google Inc. | System and method for reducing command scheduling constraints of memory circuits |
US8397013B1 (en) | 2006-10-05 | 2013-03-12 | Google Inc. | Hybrid memory module |
US7472220B2 (en) * | 2006-07-31 | 2008-12-30 | Metaram, Inc. | Interface circuit system and method for performing power management operations utilizing power management signals |
US7392338B2 (en) * | 2006-07-31 | 2008-06-24 | Metaram, Inc. | Interface circuit system and method for autonomously performing power management operations in conjunction with a plurality of memory circuits |
US8055833B2 (en) | 2006-10-05 | 2011-11-08 | Google Inc. | System and method for increasing capacity, performance, and flexibility of flash storage |
US8796830B1 (en) | 2006-09-01 | 2014-08-05 | Google Inc. | Stackable low-profile lead frame package |
US8386722B1 (en) | 2008-06-23 | 2013-02-26 | Google Inc. | Stacked DIMM memory interface |
US8041881B2 (en) | 2006-07-31 | 2011-10-18 | Google Inc. | Memory device with emulated characteristics |
US8077535B2 (en) | 2006-07-31 | 2011-12-13 | Google Inc. | Memory refresh apparatus and method |
US7580312B2 (en) * | 2006-07-31 | 2009-08-25 | Metaram, Inc. | Power saving system and method for use with a plurality of memory circuits |
US8111566B1 (en) | 2007-11-16 | 2012-02-07 | Google, Inc. | Optimal channel design for memory devices for providing a high-speed memory interface |
US8359187B2 (en) | 2005-06-24 | 2013-01-22 | Google Inc. | Simulating a different number of memory circuit devices |
US8089795B2 (en) | 2006-02-09 | 2012-01-03 | Google Inc. | Memory module with memory stack and interface with enhanced capabilities |
US20080082763A1 (en) | 2006-10-02 | 2008-04-03 | Metaram, Inc. | Apparatus and method for power management of memory circuits by a system or component thereof |
US7515453B2 (en) * | 2005-06-24 | 2009-04-07 | Metaram, Inc. | Integrated memory core and memory interface circuit |
US8438328B2 (en) | 2008-02-21 | 2013-05-07 | Google Inc. | Emulation of abstracted DIMMs using abstracted DRAMs |
DE112006002300B4 (de) | 2005-09-02 | 2013-12-19 | Google, Inc. | Vorrichtung zum Stapeln von DRAMs |
US9632929B2 (en) | 2006-02-09 | 2017-04-25 | Google Inc. | Translating an address associated with a command communicated between a system and memory circuits |
US20070189049A1 (en) * | 2006-02-16 | 2007-08-16 | Srdjan Djordjevic | Semiconductor memory module |
US20080028135A1 (en) * | 2006-07-31 | 2008-01-31 | Metaram, Inc. | Multiple-component memory interface system and method |
US7724589B2 (en) * | 2006-07-31 | 2010-05-25 | Google Inc. | System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits |
US8209479B2 (en) | 2007-07-18 | 2012-06-26 | Google Inc. | Memory circuit system and method |
US8080874B1 (en) | 2007-09-14 | 2011-12-20 | Google Inc. | Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween |
US8516185B2 (en) | 2009-07-16 | 2013-08-20 | Netlist, Inc. | System and method utilizing distributed byte-wise buffers on a memory module |
US7995365B1 (en) * | 2009-05-01 | 2011-08-09 | Micron Technology, Inc. | Method and apparatuses for managing double data rate in non-volatile memory |
CN112567352A (zh) | 2018-08-14 | 2021-03-26 | 拉姆伯斯公司 | 经封装的集成设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020129215A1 (en) * | 2001-03-06 | 2002-09-12 | Samsung Electronics Co., Ltd. | Memory system having point-to-point bus configuration |
US6477614B1 (en) * | 1998-09-30 | 2002-11-05 | Intel Corporation | Method for implementing multiple memory buses on a memory module |
US6480948B1 (en) * | 1999-06-24 | 2002-11-12 | Cirrus Logic, Inc. | Configurable system memory map |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3820843B2 (ja) * | 1999-05-12 | 2006-09-13 | 株式会社日立製作所 | 方向性結合式メモリモジュール |
-
2003
- 2003-07-30 DE DE10334779A patent/DE10334779B4/de not_active Expired - Fee Related
-
2004
- 2004-07-30 US US10/909,205 patent/US6972981B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6477614B1 (en) * | 1998-09-30 | 2002-11-05 | Intel Corporation | Method for implementing multiple memory buses on a memory module |
US6480948B1 (en) * | 1999-06-24 | 2002-11-12 | Cirrus Logic, Inc. | Configurable system memory map |
US20020129215A1 (en) * | 2001-03-06 | 2002-09-12 | Samsung Electronics Co., Ltd. | Memory system having point-to-point bus configuration |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112005002261B4 (de) | 2004-09-30 | 2019-04-11 | Intel Corporation | Gepufferter kontinuierlicher Mehrpunkt-Taktring |
Also Published As
Publication number | Publication date |
---|---|
DE10334779B4 (de) | 2005-09-29 |
US20050078532A1 (en) | 2005-04-14 |
US6972981B2 (en) | 2005-12-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |
|
R081 | Change of applicant/patentee |
Owner name: INFINEON TECHNOLOGIES AG, DE Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE Owner name: POLARIS INNOVATIONS LTD., IE Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE |
|
R081 | Change of applicant/patentee |
Owner name: POLARIS INNOVATIONS LTD., IE Free format text: FORMER OWNER: INFINEON TECHNOLOGIES AG, 85579 NEUBIBERG, DE |
|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |