DE10301305A1 - System und Verfahren zum Bestimmen des Logikzustands einer Speicherzelle in einer Magnetischer-Tunnelübergang-Speichervorrichtung - Google Patents
System und Verfahren zum Bestimmen des Logikzustands einer Speicherzelle in einer Magnetischer-Tunnelübergang-SpeichervorrichtungInfo
- Publication number
- DE10301305A1 DE10301305A1 DE10301305A DE10301305A DE10301305A1 DE 10301305 A1 DE10301305 A1 DE 10301305A1 DE 10301305 A DE10301305 A DE 10301305A DE 10301305 A DE10301305 A DE 10301305A DE 10301305 A1 DE10301305 A1 DE 10301305A1
- Authority
- DE
- Germany
- Prior art keywords
- bias voltage
- cell
- current flowing
- bias
- mtj
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000001514 detection method Methods 0.000 claims description 16
- 238000012545 processing Methods 0.000 claims description 5
- 230000005415 magnetization Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 230000001066 destructive effect Effects 0.000 description 11
- 230000006870 function Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000013500 data storage Methods 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000004590 computer program Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013523 data management Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005285 magnetism related processes and functions Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/055,299 US6650562B2 (en) | 2002-01-23 | 2002-01-23 | System and method for determining the logic state of a memory cell in a magnetic tunnel junction memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10301305A1 true DE10301305A1 (de) | 2003-08-14 |
Family
ID=21996962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10301305A Ceased DE10301305A1 (de) | 2002-01-23 | 2003-01-15 | System und Verfahren zum Bestimmen des Logikzustands einer Speicherzelle in einer Magnetischer-Tunnelübergang-Speichervorrichtung |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6650562B2 (https=) |
| JP (1) | JP3958692B2 (https=) |
| DE (1) | DE10301305A1 (https=) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6597600B2 (en) * | 2001-08-27 | 2003-07-22 | Micron Technology, Inc. | Offset compensated sensing for magnetic random access memory |
| US6650562B2 (en) * | 2002-01-23 | 2003-11-18 | Hewlett-Packard Development Company, L.P. | System and method for determining the logic state of a memory cell in a magnetic tunnel junction memory device |
| US6707084B2 (en) * | 2002-02-06 | 2004-03-16 | Micron Technology, Inc. | Antiferromagnetically stabilized pseudo spin valve for memory applications |
| US7116576B2 (en) * | 2003-07-07 | 2006-10-03 | Hewlett-Packard Development Company, L.P. | Sensing the state of a storage cell including a magnetic element |
| US20060004652A1 (en) * | 2004-06-22 | 2006-01-05 | Greig Russell H Jr | Loan option algorithm adaptable to fully variable option loans and fixed option loans |
| KR100669363B1 (ko) * | 2004-10-26 | 2007-01-16 | 삼성전자주식회사 | 메모리 장치의 읽기 방법 |
| TWI337355B (en) * | 2007-06-29 | 2011-02-11 | Ind Tech Res Inst | Simulating circuit for simulating a toggle magnetic tunneling junction element |
| US7602649B2 (en) * | 2007-09-04 | 2009-10-13 | Qimonda Ag | Method of operating an integrated circuit for reading the logical state of a memory cell |
| US8659852B2 (en) * | 2008-04-21 | 2014-02-25 | Seagate Technology Llc | Write-once magentic junction memory array |
| US7855911B2 (en) | 2008-05-23 | 2010-12-21 | Seagate Technology Llc | Reconfigurable magnetic logic device using spin torque |
| US7852663B2 (en) | 2008-05-23 | 2010-12-14 | Seagate Technology Llc | Nonvolatile programmable logic gates and adders |
| US8116123B2 (en) | 2008-06-27 | 2012-02-14 | Seagate Technology Llc | Spin-transfer torque memory non-destructive self-reference read method |
| US7881098B2 (en) | 2008-08-26 | 2011-02-01 | Seagate Technology Llc | Memory with separate read and write paths |
| US7985994B2 (en) | 2008-09-29 | 2011-07-26 | Seagate Technology Llc | Flux-closed STRAM with electronically reflective insulative spacer |
| US8169810B2 (en) | 2008-10-08 | 2012-05-01 | Seagate Technology Llc | Magnetic memory with asymmetric energy barrier |
| US8039913B2 (en) | 2008-10-09 | 2011-10-18 | Seagate Technology Llc | Magnetic stack with laminated layer |
| US8089132B2 (en) | 2008-10-09 | 2012-01-03 | Seagate Technology Llc | Magnetic memory with phonon glass electron crystal material |
| US8045366B2 (en) | 2008-11-05 | 2011-10-25 | Seagate Technology Llc | STRAM with composite free magnetic element |
| US8043732B2 (en) | 2008-11-11 | 2011-10-25 | Seagate Technology Llc | Memory cell with radial barrier |
| US7826181B2 (en) | 2008-11-12 | 2010-11-02 | Seagate Technology Llc | Magnetic memory with porous non-conductive current confinement layer |
| US8289756B2 (en) | 2008-11-25 | 2012-10-16 | Seagate Technology Llc | Non volatile memory including stabilizing structures |
| US7826259B2 (en) | 2009-01-29 | 2010-11-02 | Seagate Technology Llc | Staggered STRAM cell |
| US9728240B2 (en) * | 2009-04-08 | 2017-08-08 | Avalanche Technology, Inc. | Pulse programming techniques for voltage-controlled magnetoresistive tunnel junction (MTJ) |
| JP2011008861A (ja) * | 2009-06-25 | 2011-01-13 | Sony Corp | メモリ |
| US7999338B2 (en) | 2009-07-13 | 2011-08-16 | Seagate Technology Llc | Magnetic stack having reference layers with orthogonal magnetization orientation directions |
| CN103081018B (zh) * | 2010-08-31 | 2016-06-22 | 国际商业机器公司 | 相变存储器中的单元状态确定 |
| US9111613B2 (en) * | 2012-07-12 | 2015-08-18 | The Regents Of The University Of Michigan | Adaptive reading of a resistive memory |
| US9153307B2 (en) * | 2013-09-09 | 2015-10-06 | Qualcomm Incorporated | System and method to provide a reference cell |
| US8891326B1 (en) * | 2013-09-11 | 2014-11-18 | Avalanche Technology, Inc. | Method of sensing data in magnetic random access memory with overlap of high and low resistance distributions |
| US9721639B1 (en) | 2016-06-21 | 2017-08-01 | Micron Technology, Inc. | Memory cell imprint avoidance |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6169689B1 (en) * | 1999-12-08 | 2001-01-02 | Motorola, Inc. | MTJ stacked cell memory sensing method and apparatus |
| US6185143B1 (en) * | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
| US6426907B1 (en) * | 2001-01-24 | 2002-07-30 | Infineon Technologies North America Corp. | Reference for MRAM cell |
| US6650562B2 (en) * | 2002-01-23 | 2003-11-18 | Hewlett-Packard Development Company, L.P. | System and method for determining the logic state of a memory cell in a magnetic tunnel junction memory device |
| US6639839B1 (en) * | 2002-05-21 | 2003-10-28 | Macronix International Co., Ltd. | Sensing method for EEPROM refresh scheme |
| US6590804B1 (en) * | 2002-07-16 | 2003-07-08 | Hewlett-Packard Development Company, L.P. | Adjustable current mode differential amplifier |
| US6674679B1 (en) * | 2002-10-01 | 2004-01-06 | Hewlett-Packard Development Company, L.P. | Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having equi-potential isolation |
| US6954373B2 (en) * | 2003-06-27 | 2005-10-11 | Hewlett-Packard Development Company, L.P. | Apparatus and method for determining the logic state of a magnetic tunnel junction memory device |
-
2002
- 2002-01-23 US US10/055,299 patent/US6650562B2/en not_active Expired - Lifetime
-
2003
- 2003-01-15 DE DE10301305A patent/DE10301305A1/de not_active Ceased
- 2003-01-22 JP JP2003013288A patent/JP3958692B2/ja not_active Expired - Fee Related
- 2003-09-12 US US10/660,831 patent/US6999334B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003228993A (ja) | 2003-08-15 |
| US20050099855A1 (en) | 2005-05-12 |
| US6650562B2 (en) | 2003-11-18 |
| US6999334B2 (en) | 2006-02-14 |
| JP3958692B2 (ja) | 2007-08-15 |
| US20030137864A1 (en) | 2003-07-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8127 | New person/name/address of the applicant |
Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE |
|
| 8131 | Rejection |