DE1029939B - Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleitersystemen - Google Patents
Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden HalbleitersystemenInfo
- Publication number
- DE1029939B DE1029939B DEL22301A DEL0022301A DE1029939B DE 1029939 B DE1029939 B DE 1029939B DE L22301 A DEL22301 A DE L22301A DE L0022301 A DEL0022301 A DE L0022301A DE 1029939 B DE1029939 B DE 1029939B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- base
- electrode
- semiconductor body
- following
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 302
- 238000000034 method Methods 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 230000008569 process Effects 0.000 title claims description 8
- 239000000126 substance Substances 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims description 36
- 229910052732 germanium Inorganic materials 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 22
- 238000001816 cooling Methods 0.000 claims description 21
- 238000002425 crystallisation Methods 0.000 claims description 21
- 230000008025 crystallization Effects 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 239000007921 spray Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- 238000010924 continuous production Methods 0.000 claims description 9
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 241000947853 Vibrionales Species 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 3
- 239000001995 intermetallic alloy Substances 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 229910000927 Ge alloy Inorganic materials 0.000 claims 1
- 230000000747 cardiac effect Effects 0.000 claims 1
- 238000010410 dusting Methods 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- 229910052787 antimony Inorganic materials 0.000 description 11
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 238000007792 addition Methods 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 229910052715 tantalum Inorganic materials 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- 239000005751 Copper oxide Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 229910000431 copper oxide Inorganic materials 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 239000000110 cooling liquid Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 208000031872 Body Remains Diseases 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000012611 container material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL22301A DE1029939B (de) | 1955-06-27 | 1955-06-27 | Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleitersystemen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL22301A DE1029939B (de) | 1955-06-27 | 1955-06-27 | Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleitersystemen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1029939B true DE1029939B (de) | 1958-05-14 |
| DE1029939C2 DE1029939C2 (US07223432-20070529-C00017.png) | 1958-11-06 |
Family
ID=7262350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEL22301A Granted DE1029939B (de) | 1955-06-27 | 1955-06-27 | Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleitersystemen |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1029939B (US07223432-20070529-C00017.png) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1128048B (de) * | 1958-06-14 | 1962-04-19 | Siemens Ag | Verfahren zur p- bzw. n-Dotierung von Silizium fuer Halbleiteranordnungen |
| DE1218411B (de) * | 1961-05-09 | 1966-06-08 | United Aircraft Corp | Verfahren zur Herstellung eines duennen einkristallinen Plaettchens |
| US3287107A (en) * | 1960-08-22 | 1966-11-22 | Ass Elect Ind | Electron beam furnaces |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2457138A (en) * | 1947-07-22 | 1948-12-28 | Standard Telephones Cables Ltd | Rectifier |
-
1955
- 1955-06-27 DE DEL22301A patent/DE1029939B/de active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2457138A (en) * | 1947-07-22 | 1948-12-28 | Standard Telephones Cables Ltd | Rectifier |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1128048B (de) * | 1958-06-14 | 1962-04-19 | Siemens Ag | Verfahren zur p- bzw. n-Dotierung von Silizium fuer Halbleiteranordnungen |
| DE1132663B (de) * | 1958-06-14 | 1962-07-05 | Siemens Ag | Verfahren zur p- bzw. n-Dotierung von Silizium fuer Halbleiteranordnungen |
| US3287107A (en) * | 1960-08-22 | 1966-11-22 | Ass Elect Ind | Electron beam furnaces |
| DE1218411B (de) * | 1961-05-09 | 1966-06-08 | United Aircraft Corp | Verfahren zur Herstellung eines duennen einkristallinen Plaettchens |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1029939C2 (US07223432-20070529-C00017.png) | 1958-11-06 |
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