DE102011121799B4 - Elektrolyt und Verfahren zur elektrolytischen Abscheidung von Cu-Zn-Sn-Legierungsschichten und Verfahren zur Herstellung einer Dünnschichtsolarzelle - Google Patents
Elektrolyt und Verfahren zur elektrolytischen Abscheidung von Cu-Zn-Sn-Legierungsschichten und Verfahren zur Herstellung einer Dünnschichtsolarzelle Download PDFInfo
- Publication number
- DE102011121799B4 DE102011121799B4 DE102011121799A DE102011121799A DE102011121799B4 DE 102011121799 B4 DE102011121799 B4 DE 102011121799B4 DE 102011121799 A DE102011121799 A DE 102011121799A DE 102011121799 A DE102011121799 A DE 102011121799A DE 102011121799 B4 DE102011121799 B4 DE 102011121799B4
- Authority
- DE
- Germany
- Prior art keywords
- copper
- electrolyte
- tin
- zinc
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003792 electrolyte Substances 0.000 title claims abstract description 79
- 229910045601 alloy Inorganic materials 0.000 title claims description 30
- 239000000956 alloy Substances 0.000 title claims description 30
- 238000000034 method Methods 0.000 title claims description 26
- 229910007610 Zn—Sn Inorganic materials 0.000 title claims description 8
- 239000010409 thin film Substances 0.000 title claims description 4
- 238000004519 manufacturing process Methods 0.000 title description 11
- 238000004070 electrodeposition Methods 0.000 title 1
- 239000010949 copper Substances 0.000 claims abstract description 95
- 239000011701 zinc Substances 0.000 claims abstract description 68
- 229910052802 copper Inorganic materials 0.000 claims abstract description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 230000008021 deposition Effects 0.000 claims abstract description 32
- 235000011180 diphosphates Nutrition 0.000 claims abstract description 30
- 229910052718 tin Inorganic materials 0.000 claims abstract description 27
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 23
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 22
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims abstract description 18
- PDYXSJSAMVACOH-UHFFFAOYSA-N [Cu].[Zn].[Sn] Chemical compound [Cu].[Zn].[Sn] PDYXSJSAMVACOH-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910001297 Zn alloy Inorganic materials 0.000 claims abstract description 15
- -1 pyrophosphate anions Chemical class 0.000 claims abstract description 15
- 125000005402 stannate group Chemical group 0.000 claims abstract description 14
- 229940071182 stannate Drugs 0.000 claims abstract description 12
- 150000002739 metals Chemical class 0.000 claims abstract description 10
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims abstract description 6
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001431 copper ion Inorganic materials 0.000 claims abstract description 4
- 239000011135 tin Substances 0.000 claims description 58
- 150000002500 ions Chemical class 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 229910052717 sulfur Inorganic materials 0.000 claims description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000011593 sulfur Substances 0.000 claims description 7
- 239000011669 selenium Substances 0.000 claims description 5
- 150000004679 hydroxides Chemical class 0.000 claims description 4
- 150000003467 sulfuric acid derivatives Chemical class 0.000 claims description 4
- 229910000597 tin-copper alloy Inorganic materials 0.000 claims description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical class OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 claims description 3
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 150000007513 acids Chemical class 0.000 claims description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims description 2
- 150000001991 dicarboxylic acids Chemical class 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- 150000002763 monocarboxylic acids Chemical class 0.000 claims description 2
- 150000002823 nitrates Chemical class 0.000 claims description 2
- 150000002826 nitrites Chemical class 0.000 claims description 2
- 235000021317 phosphate Nutrition 0.000 claims description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229940065287 selenium compound Drugs 0.000 claims description 2
- 150000003343 selenium compounds Chemical class 0.000 claims description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical class [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000000087 stabilizing effect Effects 0.000 claims 1
- 229940048084 pyrophosphate Drugs 0.000 description 25
- 238000000151 deposition Methods 0.000 description 21
- 239000000203 mixture Substances 0.000 description 19
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 16
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 13
- 229910002058 ternary alloy Inorganic materials 0.000 description 12
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 8
- 229910021653 sulphate ion Inorganic materials 0.000 description 8
- 229910001128 Sn alloy Inorganic materials 0.000 description 7
- 229910001369 Brass Inorganic materials 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 239000010951 brass Substances 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- 229910000906 Bronze Inorganic materials 0.000 description 5
- 239000010974 bronze Substances 0.000 description 5
- QCPTVXCMROGZOL-UHFFFAOYSA-L dipotassium;oxalate;hydrate Chemical compound O.[K+].[K+].[O-]C(=O)C([O-])=O QCPTVXCMROGZOL-UHFFFAOYSA-L 0.000 description 5
- 238000005868 electrolysis reaction Methods 0.000 description 5
- 235000010265 sodium sulphite Nutrition 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 4
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920000388 Polyphosphate Polymers 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 description 2
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 2
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical class [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 239000001205 polyphosphate Substances 0.000 description 2
- 235000011176 polyphosphates Nutrition 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- IOUCSUBTZWXKTA-UHFFFAOYSA-N dipotassium;dioxido(oxo)tin Chemical compound [K+].[K+].[O-][Sn]([O-])=O IOUCSUBTZWXKTA-UHFFFAOYSA-N 0.000 description 1
- TVQLLNFANZSCGY-UHFFFAOYSA-N disodium;dioxido(oxo)tin Chemical compound [Na+].[Na+].[O-][Sn]([O-])=O TVQLLNFANZSCGY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004312 hexamethylene tetramine Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 229940079864 sodium stannate Drugs 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011121799A DE102011121799B4 (de) | 2011-12-21 | 2011-12-21 | Elektrolyt und Verfahren zur elektrolytischen Abscheidung von Cu-Zn-Sn-Legierungsschichten und Verfahren zur Herstellung einer Dünnschichtsolarzelle |
| PCT/EP2012/075111 WO2013092312A1 (fr) | 2011-12-21 | 2012-12-11 | Dépôt d'alliages cuivre-étain-zinc à partir d'un électrolyte |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011121799A DE102011121799B4 (de) | 2011-12-21 | 2011-12-21 | Elektrolyt und Verfahren zur elektrolytischen Abscheidung von Cu-Zn-Sn-Legierungsschichten und Verfahren zur Herstellung einer Dünnschichtsolarzelle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102011121799A1 DE102011121799A1 (de) | 2013-06-27 |
| DE102011121799B4 true DE102011121799B4 (de) | 2013-08-29 |
Family
ID=47326184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102011121799A Expired - Fee Related DE102011121799B4 (de) | 2011-12-21 | 2011-12-21 | Elektrolyt und Verfahren zur elektrolytischen Abscheidung von Cu-Zn-Sn-Legierungsschichten und Verfahren zur Herstellung einer Dünnschichtsolarzelle |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE102011121799B4 (fr) |
| WO (1) | WO2013092312A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105829583A (zh) * | 2013-12-17 | 2016-08-03 | 优美科电镀技术有限公司 | 从电解质中沉积铜-锡合金和铜-锡-锌合金 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AR100422A1 (es) * | 2014-05-15 | 2016-10-05 | Nippon Steel & Sumitomo Metal Corp | Solución para deposición para conexión roscada para un caño o tubo y método de producción de la conexión roscada para un caño o tubo |
| DE102021117095A1 (de) | 2021-07-02 | 2023-01-05 | Umicore Galvanotechnik Gmbh | Bronzeschichten als Edelmetallersatz |
| DE202021004169U1 (de) | 2021-07-02 | 2022-12-07 | Umicore Galvanotechnik Gmbh | Bronzeschicht als Edelmetallersatz in Smart Cards |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10102278A (ja) * | 1996-09-30 | 1998-04-21 | Nippon New Chrome Kk | 銅−スズ合金メッキ用ピロリン酸浴 |
| EP0790332B1 (fr) * | 1996-02-12 | 2001-07-18 | GA-TEK, Inc. (doing business as Gould Electronics Inc.) | Bain de dépôt de laiton sans cyanure et procédé de fabrication d'une feuille métallique ayant une couche de laiton en utilisant ce bain |
| US20010014407A1 (en) * | 2000-01-28 | 2001-08-16 | Mitsui Mining & Smelting Co., Ltd. | Surface-treated copper foil, method of producing the surface-treated copper foil, and copper-clad laminate employing the surface-treated copper foil |
| US6416571B1 (en) * | 2000-04-14 | 2002-07-09 | Nihon New Chrome Co., Ltd. | Cyanide-free pyrophosphoric acid bath for use in copper-tin alloy plating |
| WO2009109271A2 (fr) * | 2008-02-29 | 2009-09-11 | Atotech Deutschland Gmbh | Bain à base de pyrophosphate pour le plaquage de couches d’alliage d’étain |
| US20100147696A1 (en) * | 2007-02-14 | 2010-06-17 | Klaus Bronder | Copper-tin electrolyte and method for depositing bronze layers |
| EP2116634B1 (fr) * | 2008-05-08 | 2010-10-27 | Umicore Galvanotechnik GmbH | Electrolyte de cuivre-zinc modifié et procédé de déposition de couches de bronze |
| EP2037006B1 (fr) * | 2006-05-24 | 2011-07-13 | ATOTECH Deutschland GmbH | Composition de placage métallique et procédé pour le dépôt de cuivre-zinc-étain adapté à la fabrication de cellule solaire à couche mince |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3670186B2 (ja) * | 2000-01-28 | 2005-07-13 | 三井金属鉱業株式会社 | プリント配線板用表面処理銅箔の製造方法 |
| DE102008032398A1 (de) * | 2008-07-10 | 2010-01-14 | Umicore Galvanotechnik Gmbh | Verbesserter Kupfer-Zinn-Elektrolyt und Verfahren zur Abscheidung von Bronzeschichten |
-
2011
- 2011-12-21 DE DE102011121799A patent/DE102011121799B4/de not_active Expired - Fee Related
-
2012
- 2012-12-11 WO PCT/EP2012/075111 patent/WO2013092312A1/fr active Application Filing
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0790332B1 (fr) * | 1996-02-12 | 2001-07-18 | GA-TEK, Inc. (doing business as Gould Electronics Inc.) | Bain de dépôt de laiton sans cyanure et procédé de fabrication d'une feuille métallique ayant une couche de laiton en utilisant ce bain |
| JPH10102278A (ja) * | 1996-09-30 | 1998-04-21 | Nippon New Chrome Kk | 銅−スズ合金メッキ用ピロリン酸浴 |
| US20010014407A1 (en) * | 2000-01-28 | 2001-08-16 | Mitsui Mining & Smelting Co., Ltd. | Surface-treated copper foil, method of producing the surface-treated copper foil, and copper-clad laminate employing the surface-treated copper foil |
| US6416571B1 (en) * | 2000-04-14 | 2002-07-09 | Nihon New Chrome Co., Ltd. | Cyanide-free pyrophosphoric acid bath for use in copper-tin alloy plating |
| EP1146148B1 (fr) * | 2000-04-14 | 2011-08-24 | Nihon New Chrome Co. Ltd. | Bain d'électrodéposition, à base d'acide pyro-phosphorique et exempt de cyanure, pour l'obtention d'alliage cuivre-étain |
| EP2037006B1 (fr) * | 2006-05-24 | 2011-07-13 | ATOTECH Deutschland GmbH | Composition de placage métallique et procédé pour le dépôt de cuivre-zinc-étain adapté à la fabrication de cellule solaire à couche mince |
| US20100147696A1 (en) * | 2007-02-14 | 2010-06-17 | Klaus Bronder | Copper-tin electrolyte and method for depositing bronze layers |
| WO2009109271A2 (fr) * | 2008-02-29 | 2009-09-11 | Atotech Deutschland Gmbh | Bain à base de pyrophosphate pour le plaquage de couches d’alliage d’étain |
| EP2116634B1 (fr) * | 2008-05-08 | 2010-10-27 | Umicore Galvanotechnik GmbH | Electrolyte de cuivre-zinc modifié et procédé de déposition de couches de bronze |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105829583A (zh) * | 2013-12-17 | 2016-08-03 | 优美科电镀技术有限公司 | 从电解质中沉积铜-锡合金和铜-锡-锌合金 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013092312A1 (fr) | 2013-06-27 |
| DE102011121799A1 (de) | 2013-06-27 |
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