DE102011088418B4 - bond connection - Google Patents

bond connection Download PDF

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Publication number
DE102011088418B4
DE102011088418B4 DE102011088418.1A DE102011088418A DE102011088418B4 DE 102011088418 B4 DE102011088418 B4 DE 102011088418B4 DE 102011088418 A DE102011088418 A DE 102011088418A DE 102011088418 B4 DE102011088418 B4 DE 102011088418B4
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Germany
Prior art keywords
connecting element
semiconductor component
bond connection
metallization layer
connection
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DE102011088418.1A
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German (de)
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DE102011088418A1 (en
Inventor
Sonja Dudziak
Christof Kobler
Thomas Kaden
Tim Behrens
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Robert Bosch GmbH
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Robert Bosch GmbH
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Priority to DE102011088418.1A priority Critical patent/DE102011088418B4/en
Publication of DE102011088418A1 publication Critical patent/DE102011088418A1/en
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Publication of DE102011088418B4 publication Critical patent/DE102011088418B4/en
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    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

Bondverbindung (10) zwischen einem Halbleiterbauelement (1) und einem metallischen Verbindungselement (15), wobei das Verbindungselement (15) im Wesentlichen aus Kupfer besteht, und wobei die Bondverbindung (10) als Laserstrahlschweißverbindung ausgebildet ist,wobei das Halbleiterbauelement (1) auf der dem Verbindungselement (15) zugewandten Seite mit einer im Wesentlichen aus Kupfer bestehenden Metallisierungsschicht (6) ausgestattet istdadurch gekennzeichnet,dass die Metallisierungsschicht (6) eine Dicke zwischen 10µm und 50µm aufweist.Bond connection (10) between a semiconductor component (1) and a metallic connecting element (15), wherein the connecting element (15) consists essentially of copper, and wherein the bond connection (10) is designed as a laser beam welded connection, the semiconductor component (1) on the the side facing the connecting element (15) is equipped with a metallization layer (6) consisting essentially of copper, characterized in that the metallization layer (6) has a thickness of between 10 µm and 50 µm.

Description

Stand der TechnikState of the art

Die Erfindung betrifft eine Bondverbindung nach dem Oberbegriff des Anspruchs 1.The invention relates to a bond connection according to the preamble of claim 1.

Eine derartige Bondverbindung ist aus der DE 600 17 176 T2 bekannt. Die bekannte Bondverbindung dient dem Bonden eines leitenden, beispielsweise aus Kupfer bestehenden Metallbands bei elektronischen Schaltungen. Hierbei das Metallband mittels eines Bondskopfs auf die zu kontaktierende Oberfläche eines Bauelements aufgesetzt und mittels einer Laserstrahlschweißeinrichtung verschweißt.Such a bond is from DE 600 17 176 T2 known. The well-known bonding connection is used for bonding a conductive metal strip made of copper, for example, in electronic circuits. In this case, the metal strip is placed on the surface of a component to be contacted by means of a bonding head and welded by means of a laser beam welding device.

Angaben bezüglich der Ausbildung des zu kontaktierenden Bauteils bzw. der Fläche, mit dem das Metallband verbunden werden soll, sind der genannten Schrift jedoch nicht entnehmbar.However, the document mentioned does not contain any information regarding the design of the component to be contacted or the surface to which the metal strip is to be connected.

Darüber hinaus sind aus dem Stand der Technik Bondverbindungen bekannt, die durch Ultraschallschweißen ausgebildet werden. Hierbei weist die Oberfläche eines zu kontaktierenden elektronischen Bauteils eine Metallisierung in Form einer Kupferbeschichtung auf, die eine Dicke von mehr als 10µm aufweisen muss, da beim Bonden mittels Ultraschallschweißen hohe Kräfte und Energien auf das zu kontaktierende elektronische Bauteil einwirken und vermieden werden muss, dass das Bauteil beschädigt wird.Bond connections formed by ultrasonic welding are also known from the prior art. The surface of an electronic component to be contacted has a metallization in the form of a copper coating, which must have a thickness of more than 10 µm, since high forces and energies act on the electronic component to be contacted when bonding by means of ultrasonic welding and it must be avoided that the component is damaged.

Aus der US 2007 / 0 172 980 A1, die den Oberbegriff bildet, ist eine Halbleiteranordnung und ein Herstellungs- verfahren hierfür bekannt. Die Kontakte werden durch Laserschweißen hergestellt.From US 2007/0 172 980 A1, which forms the preamble, a semiconductor arrangement and a production method for this are known. The contacts are made by laser welding.

Die JP 2008 - 305 902 A offenbart ein Verfahren zur Herstellung einer Halbleiteranordnung, wobei die Kontakte durch Laserschweißen hergestellt werden.The JP 2008 - 305 902 A discloses a method of manufacturing a semiconductor device wherein the contacts are made by laser welding.

Aus der US 2008 / 0 087 994 A1 ist eine Halbleiteranordnung mit einem Halbleiterelement bekannt, wobei der Kontakt durch Laserschweißen hergestellt wird.A semiconductor arrangement with a semiconductor element is known from US 2008/0 087 994 A1, the contact being produced by laser welding.

Offenbarung der ErfindungDisclosure of Invention

Ausgehend von dem dargestellten Stand der Technik liegt der Erfindung die Aufgabe zugrunde, eine Bondverbindung nach dem Oberbegriff des Anspruchs 1 derart weiterzubilden, dass diese unter Ausbildung eines Laserstrahlschweißverbindung zwischen dem Halbleiterbauelement und dem metallischen Verbindungselement besonders einfach und wirtschaftlich ausgebildet ist. Diese Aufgabe wird erfindungsgemäß bei einer Bondverbindung mit den Merkmalen des Anspruchs 1 dadurch gelöst, dass das Halbleiterbauelement auf der dem Verbindungselement zugewandten Seite mit einer im Wesentlichen aus Kupfer bestehenden Metallisierungsschicht ausgestattet ist. Durch die Verwendung von Kupfer für die Metallisierungsschicht wird ein besonders guter Wärmeübergang und eine besonders gute Stromleitung zwischen dem Verbindungselement und dem Halbleiterbauelement erzielt, so dass bereits die Einleitung relativ geringer Energien beim Laserstrahlschweißen für hinreichend feste Verbindungen zwischen dem Leitungselement und dem Halbleiterbauelement sorgen. Insbesondere ist es lediglich erforderlich, die Verbindung nur lokal zu erwärmen bzw. nur eine relativ geringe Kontaktkraft auf das Verbindungselement im Bereich des Halbleiterbauelements auszuüben. Erfindungsgemäß ist eine Dicke der Metallisierungsschicht (auf dem Halbleiterbauelement) zwischen 10µm und 50µm.Proceeding from the prior art presented, the invention is based on the object of further developing a bond connection according to the preamble of claim 1 in such a way that it is particularly simple and economical to form a laser beam welded connection between the semiconductor component and the metallic connecting element. This object is achieved according to the invention in the case of a bonding connection having the features of claim 1 in that the semiconductor component is equipped with a metallization layer consisting essentially of copper on the side facing the connecting element. The use of copper for the metallization layer achieves particularly good heat transfer and particularly good current conduction between the connecting element and the semiconductor component, so that the introduction of relatively low levels of energy during laser beam welding already ensures sufficiently strong connections between the conduction element and the semiconductor component. In particular, it is only necessary to heat the connection only locally or to exert only a relatively small contact force on the connection element in the region of the semiconductor component. According to the invention, the thickness of the metallization layer (on the semiconductor component) is between 10 μm and 50 μm.

Vorteilhafte Weiterbildungen der erfindungsgemäßen Bondverbindung sind in den Unteransprüchen aufgeführt. In den Rahmen der Erfindung fallen sämtliche Kombinationen aus zumindest zwei von in den Ansprüchen, der Beschreibung und/oder Figuren offenbarten Merkmalen.Advantageous developments of the bond connection according to the invention are listed in the dependent claims. All combinations of at least two of the features disclosed in the claims, the description and/or the figures fall within the scope of the invention.

Ganz besonders bevorzugt ist eine konstruktive Ausgestaltung des Verbindungselements, bei der dieses bandförmig und als Stanz-/Biegeteil ausgebildet ist. Es findet somit ein vorgeformtes Verbindungselement Verwendung, das insbesondere durch die Bereitstellung zweier ebener Kontaktflächen, die sich in der Praxis auf unterschiedlichen Höhenniveaus befinden, besonders einfach verarbeiten bzw. elektrisch kontaktieren lässt. Hierbei ist die eine Kontaktstelle im Bereich des Verbindungselements zu dem Halbleiterbauelement vorgesehen, während die andere Kontaktfläche im Bereich zwischen dem Verbindungselement und z.B. der Leiterbahn eines Schaltungsträgers angeordnet ist.A constructive design of the connecting element in which it is designed in the form of a strip and as a stamped/bent part is particularly preferred. A preformed connecting element is thus used, which can be processed or electrically contacted in a particularly simple manner, in particular due to the provision of two planar contact surfaces, which in practice are located at different levels. In this case, one contact point is provided in the area of the connecting element to the semiconductor component, while the other contact area is arranged in the area between the connecting element and, for example, the conductor track of a circuit carrier.

In der Praxis haben sich für die Dimensionierung des Verbindungselements als günstig eine Breite zwischen 500µm und 4000µm (in Abhängigkeit von der Dimensionierung des zu kontaktierenden Halbleiterbauelements) sowie eine Dicke zwischen 100µm und 500µm erwiesen.In practice, a width of between 500 μm and 4000 μm (depending on the dimensioning of the semiconductor component to be contacted) and a thickness of between 100 μm and 500 μm have proven favorable for the dimensioning of the connecting element.

Die Verwendung einer Laserstrahlverschweißung zwischen dem Verbindungselement und den zu kontaktierenden Oberflächen hat den Vorteil, dass eine lokal sehr eng begrenzte Erwärmung und Verschweißung des Verbindungselements mit der der zugewandten Oberfläche ermöglicht wird. Um hierbei eine besonders sichere und flächenmäßig günstige Einleitung der Wärme in die Bauteile zu ermöglichen wird vorgeschlagen, dass die Schweißnaht eine geometrische Grundform in Form einer Linie, eines Kreises, eines Rechtecks o.ä. aufweist. Dadurch werden vor allem lokale thermische Überbeanspruchungen im Bereich des Halbleiterbauelements vermieden.The use of laser beam welding between the connecting element and the surfaces to be contacted has the advantage that locally very narrowly limited heating and welding of the connecting element to the facing surface is made possible. In order to enable the heat to be introduced into the components in a particularly reliable manner and in terms of area, it is proposed that the weld seam have a basic geometric shape in the form of a line, a circle, a rectangle or the like. This primarily avoids local thermal overstressing in the area of the semiconductor component.

Bevorzugt ist der Einsatz bei Halbleiterbauelementen, bei der diese als Leistungshalbleiterbauelement in Form eines IGBTs, eines MOSFETs, einer Diode o.ä. ausgebildet sind.It is preferably used in semiconductor components in which these are in the form of a power semiconductor component in the form of an IGBT, a MOSFET, a diode or the like.

Weitere Vorteile, Merkmale und Einzelheiten der Erfindung ergeben sich aus der nachfolgenden Beschreibung bevorzugter Ausführungsbeispiele sowie anhand der Zeichnung.Further advantages, features and details of the invention result from the following description of preferred exemplary embodiments and from the drawing.

Diese zeigt in:

  • 1 eine erfindungsgemäße Bondverbindung zwischen einem Halbleiterbauelement und einer Leiterbahn auf einem Schaltungsträger in einer vereinfachten Seitenansicht und
  • 2 die Bondverbindung gemäß 1 in Draufsicht.
This shows in:
  • 1 a bond connection according to the invention between a semiconductor component and a conductor track on a circuit carrier in a simplified side view and
  • 2 the bond connection according to 1 in top view.

Gleiche Bauteile bzw. Bauteile mit gleicher Funktion sind in den Figuren mit den gleichen Bezugsziffern versehen.Identical components or components with the same function are provided with the same reference numbers in the figures.

In den beiden Figuren ist eine erfindungsgemäße Bondverbindung 10 zwischen einem Halbleiterbauelement 1 und einem metallischen Verbindungselement 15 dargestellt. Bei dem Halbleiterbauelement 1 handelt es sich insbesondere um ein Leistungshalbleiterbauelement in Form eines IGBTs, eines MOSFETs, einer Diode o.ä. Das Halbleiterbauelement 1 ist mittels einer Lot- oder Sinterschicht 2 mit einer ersten Leiterbahn 3 bzw. einer metallischen Schicht verbunden, die wiederum an der Oberseite eines Schaltungsträgers 5 in Form eines Substrats o.ä. angeordnet ist. Die Oberfläche des Halbleiterbauelements 1 ist zumindest im Bereich der Bondverbindung 10, vorzugsweise jedoch vollflächig, mittels einer Metallisierungsschicht 6 versehen. Die Metallisierungsschicht 6 besteht vorzugsweise zumindest im Wesentlichen aus Kupfer. Alternativ sind jedoch auch andere Materialien, z.B. Aluminium enthaltend, denkbar. Die Metallisierungsschicht 6 weist insbesondere eine Schichthöhe bzw. Dicke zwischen 10µm und 50µm auf.A bond connection 10 according to the invention between a semiconductor component 1 and a metallic connecting element 15 is shown in the two figures. The semiconductor component 1 is in particular a power semiconductor component in the form of an IGBT, a MOSFET, a diode or the like. The semiconductor component 1 is connected by means of a solder or sinter layer 2 to a first conductor track 3 or a metallic layer, which in turn is arranged on the upper side of a circuit carrier 5 in the form of a substrate or the like. The surface of the semiconductor component 1 is provided with a metallization layer 6 at least in the region of the bond connection 10, but preferably over the entire surface. The metallization layer 6 preferably consists at least essentially of copper. Alternatively, however, other materials, e.g. containing aluminum, are also conceivable. The metallization layer 6 has, in particular, a layer height or thickness of between 10 μm and 50 μm.

Bei dem Verbindungselement 15 handelt es sich um aus Metall bestehendes Bändchen, vorzugsweise ebenfalls zumindest im Wesentlichen aus Kupfer bestehend, mit einer Breite (in Abhängigkeit von der Dimensionierung des Halbleiterbauelements 1) zwischen 500µm und 4000µm und einer Dicke zwischen 100µm und 500µm. Insbesondere ist es im Rahmen der Erfindung vorgesehen, dass das Verbindungselement 15 als vorgefertigtes, starres Stanz-/Biegeteil ausgebildet ist.The connecting element 15 is a metal ribbon, preferably also at least essentially made of copper, with a width (depending on the dimensioning of the semiconductor component 1) between 500 μm and 4000 μm and a thickness between 100 μm and 500 μm. In particular, it is provided within the scope of the invention that the connecting element 15 is designed as a prefabricated, rigid punched/bent part.

Das Verbindungselement 15 ist zusätzlich zum Halbleiterbauelement 1 noch mit einer zweiten Leiterbahn 7 verbunden, die an der Oberseite des Schaltungsträgers 5 angeordnet ist. Das Verbindungselement 15 verbindet somit die Metallisierungsschicht 6 des Halbleiterbauelements 1 mit der zweiten Leiterbahn 7 des Schaltungsträgers 5 im Bereich zweier Kontaktbereiche 11, 12. Wie insbesondere anhand der 1 erkennbar ist, befinden sich die beiden Kontaktbereiche 11, 12 auf einem unterschiedlichen Niveau (zum Beispiel in Bezug zum Schaltungsträger 5), da im dargestellten Ausführungsbeispiel das Halbleiterbauelement 1 zusammen mit der Lot- oder Sinterschicht 2 und der Metallisierungsschicht 6 insgesamt eine bedeutend größere Höhe aufweist als die zweite Leiterbahn 7. Durch das vorgefertigte Verbindungselement 15, das die unterschiedlichen Niveaus der beiden Kontaktbereichs 11, 12 durch eine entsprechende Form berücksichtigt, und das mittels eines nicht dargestellten Handlingroboters im Bereich des Halbleiterbauelements 1 bzw. der zweiten Leiterbahn 7 positioniert wird, ist es nicht erforderlich, dass das Verbindungselement 15 in irgendeiner Art und Weise flexibel ausgebildet ist.In addition to the semiconductor component 1 , the connecting element 15 is also connected to a second conductor track 7 , which is arranged on the upper side of the circuit carrier 5 . The connecting element 15 thus connects the metallization layer 6 of the semiconductor component 1 to the second conductor track 7 of the circuit carrier 5 in the area of two contact areas 11, 12. As can be seen in particular on the basis of FIG 1 As can be seen, the two contact areas 11, 12 are at a different level (for example in relation to the circuit carrier 5), since in the illustrated embodiment the semiconductor component 1 together with the solder or sinter layer 2 and the metallization layer 6 has a significantly greater height overall than the second conductor track 7. The prefabricated connecting element 15, which takes into account the different levels of the two contact areas 11, 12 by means of a corresponding shape, and which is positioned in the area of the semiconductor component 1 or the second conductor track 7 by means of a handling robot (not shown). it is not necessary for the connecting element 15 to be flexible in any way.

Die Verbindung zwischen dem Verbindungselement 15 der Metallisierungsschicht 6 bzw. der zweiten Leiterbahn 7 erfolgt mittels einer nicht dargestellten Laserstrahlschweißeinrichtung. Hierbei wird mittels der Laserstrahlschweißeinrichtung ein Laserstrahl 13, 14 erzeugt, der im jeweiligen Kontaktbereich 11, 12 das Material des Verbindungselements 15 sowie der Metallisierungsschicht 6 bzw. der zweiten Leiterbahn 7 aufschmelzt und nach dem Erstarren des Materials für eine feste Verbindung zwischen den angesprochenen Schichten bzw. Bauteilen sorgt. Wie insbesondere anhand der 2 erkennbar ist, können die Kontaktbereiche 11, 12, die mittels des Laserstrahls 13, 14 erzeugt werden, eine beliebige Form aufweisen. Bevorzugt ist es jedoch vorgesehen, dass die Kontaktbereiche 11, 12 eine geometrische Grundform, z.B. in Form eines Rechtecks (siehe Kontaktbereich 11 in der 2), eines Kreises (siehe Kontaktbereich 12 der 2), einer Linie o.ä. aufweisen.The connection between the connecting element 15 of the metallization layer 6 and the second conductor track 7 takes place by means of a laser beam welding device, not shown. Here, a laser beam 13, 14 is generated by means of the laser beam welding device, which melts the material of the connecting element 15 and the metallization layer 6 or the second conductor track 7 in the respective contact area 11, 12 and, after the material has solidified, creates a permanent connection between the layers or . How in particular based on the 2 As can be seen, the contact areas 11, 12, which are produced by means of the laser beam 13, 14, can have any shape. However, it is preferably provided that the contact areas 11, 12 have a basic geometric shape, for example in the form of a rectangle (see contact area 11 in FIG 2 ), of a circle (see contact area 12 of 2 ), a line or similar.

Als Laserstrahlschweißeinrichtung kommen alle üblicherweise im Bereich der Mikroelektronik verwendeten Laserstrahlschweißeinrichtungen in Frage, wesentlich ist lediglich, dass diese die Kontaktbereiche 11, 12 mit hinreichender Genauigkeit erzeugen bzw. schweißen können.All laser beam welding devices commonly used in the field of microelectronics can be used as the laser beam welding device, it is only important that they can produce or weld the contact areas 11, 12 with sufficient accuracy.

Die soweit beschriebenen, erfindungsgemäßen Bondverbindungen 10 können in vielfältiger Art und Weise abgewandelt bzw. modifiziert werden ohne vom Erfindungsgedanken abzuweichen. So ist es selbstverständlich im Rahmen der Erfindung insbesondere denkbar, das Halbleiterbauelement 1 gleichzeitig mit mehreren Verbindungselementen 15 zu kontaktieren. Ein Einsatzbereich derartiger Bondverbindungen 10 besteht insbesondere für Schaltungen in Antriebs- oder Energiemanagementsystemen von Fahrzeugen, in Hybridfahrzeugen, Brennstoffzellenfahrzeugen oder Elektrofahrzeugen. Auch sind Anwendungen im Bereich regenerativer Energien, z.B. bei einem Fotovoltaik-Inverter denkbar.The bond connections 10 according to the invention that have been described so far can be altered or modified in a variety of ways without deviating from the idea of the invention. It is of course particularly conceivable within the scope of the invention to use the semiconductor component 1 to contact simultaneously with several connecting elements 15. One area of use for bonded connections 10 of this type is in particular for circuits in drive or energy management systems in vehicles, in hybrid vehicles, fuel cell vehicles or electric vehicles. Applications in the field of regenerative energies, for example in a photovoltaic inverter, are also conceivable.

Claims (7)

Bondverbindung (10) zwischen einem Halbleiterbauelement (1) und einem metallischen Verbindungselement (15), wobei das Verbindungselement (15) im Wesentlichen aus Kupfer besteht, und wobei die Bondverbindung (10) als Laserstrahlschweißverbindung ausgebildet ist, wobei das Halbleiterbauelement (1) auf der dem Verbindungselement (15) zugewandten Seite mit einer im Wesentlichen aus Kupfer bestehenden Metallisierungsschicht (6) ausgestattet ist dadurch gekennzeichnet, dass die Metallisierungsschicht (6) eine Dicke zwischen 10µm und 50µm aufweist.Bond connection (10) between a semiconductor component (1) and a metallic connecting element (15), the connecting element (15) essentially consisting of copper, and the bond connection (10) being designed as a laser beam welded connection, the semiconductor component (1) being on the the side facing the connecting element (15) is equipped with a metallization layer (6) consisting essentially of copper, characterized in that the metallization layer (6) has a thickness of between 10 µm and 50 µm. Bondverbindung nach Anspruch 1, dadurch gekennzeichnet, dass das Verbindungselement (15) bandförmig und als Stanz-/Biegeteil ausgebildet ist.bond connection claim 1 , characterized in that the connecting element (15) is strip-shaped and designed as a stamped/bent part. Bondverbindung nach Anspruch 2, dadurch gekennzeichnet, dass die Breite des Verbindungselements (15), in Abhängigkeit von der Dimensionierung des Halbleiterbauelements (1), zwischen 500µm und 4000µm und die Dicke zwischen 100µm und 500µm beträgt.bond connection claim 2 , characterized in that the width of the connecting element (15), depending on the dimensioning of the semiconductor component (1), is between 500 µm and 4000 µm and the thickness is between 100 µm and 500 µm. Bondverbindung nach Anspruch 2 oder 3, dadurch gekennzeichnet, dass das Verbindungselement (15) zwei Kontaktbereiche (11, 12) mit der Metallisierungsschicht (6) des Halbleiterbauelements (1) und einer zu kontaktierenden Oberfläche, insbesondere der Oberseite einer Leiterbahn (7) aufweist, und dass sich die beiden Kontaktbereiche (11, 12) auf unterschiedlichen Niveaus in Bezug zu einem Schaltungsträger (5) befinden.bond connection claim 2 or 3 , characterized in that the connecting element (15) has two contact areas (11, 12) with the metallization layer (6) of the semiconductor component (1) and a surface to be contacted, in particular the upper side of a conductor track (7), and that the two contact areas (11, 12) are at different levels in relation to a circuit carrier (5). Bondverbindung nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass die Form der Schweißnaht eine geometrische Grundform in Form einer Linie, eines Kreises, eines Rechtecks o.ä. aufweist.Bond connection according to one of Claims 1 until 4 , characterized in that the shape of the weld seam has a basic geometric shape in the form of a line, a circle, a rectangle or the like. Bondverbindung nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass das Halbleiterbauelement (1) ein Leistungshalbleiterbauelement in Form eines IGBTs, eines MOSFETs, einer Diode o.ä. ist.Bond connection according to one of Claims 1 until 5 , characterized in that the semiconductor component (1) is a power semiconductor component in the form of an IGBT, a MOSFET, a diode or the like. Baugruppe, insbesondere Schaltungsträger (5) mit elektronischen Bauelementen (1), umfassend wenigstens eine Bondverbindung (10) nach einem der Ansprüche 1 bis 6.Assembly, in particular circuit carrier (5) with electronic components (1), comprising at least one bond connection (10) according to one of Claims 1 until 6 .
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DE60017176T2 (en) 1999-10-22 2005-05-25 Medtronic, Inc., Minneapolis A DEVICE AND METHOD FOR LASER WELDING OF TAPES FOR ELECTRICAL CONNECTIONS
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