DE102011088418A1 - Bond for forming connection between semiconductor component and metallic connector, has connector consisting of copper, where semiconductor component having metallization layer containing copper is formed at connector facing side - Google Patents
Bond for forming connection between semiconductor component and metallic connector, has connector consisting of copper, where semiconductor component having metallization layer containing copper is formed at connector facing side Download PDFInfo
- Publication number
- DE102011088418A1 DE102011088418A1 DE102011088418A DE102011088418A DE102011088418A1 DE 102011088418 A1 DE102011088418 A1 DE 102011088418A1 DE 102011088418 A DE102011088418 A DE 102011088418A DE 102011088418 A DE102011088418 A DE 102011088418A DE 102011088418 A1 DE102011088418 A1 DE 102011088418A1
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- Prior art keywords
- connector
- connecting element
- bond
- copper
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000001465 metallisation Methods 0.000 title claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 12
- 239000010949 copper Substances 0.000 title claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 238000003466 welding Methods 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
Stand der TechnikState of the art
Die Erfindung betrifft eine Bondverbindung nach dem Oberbegriff des Anspruchs 1. The invention relates to a bond connection according to the preamble of claim 1.
Eine derartige Bondverbindung ist aus der
Angaben bezüglich der Ausbildung des zu kontaktierenden Bauteils bzw. der Fläche, mit dem das Metallband verbunden werden soll, sind der genannten Schrift jedoch nicht entnehmbar.Details regarding the design of the component to be contacted or the surface with which the metal strip is to be connected, however, can not be taken from the cited document.
Darüber hinaus sind aus dem Stand der Technik Bondverbindungen bekannt, die durch Ultraschallschweißen ausgebildet werden. Hierbei weist die Oberfläche eines zu kontaktierenden elektronischen Bauteils eine Metallisierung in Form einer Kupferbeschichtung auf, die eine Dicke von mehr als 10µm aufweisen muss, da beim Bonden mittels Ultraschallschweißen hohe Kräfte und Energien auf das zu kontaktierende elektronische Bauteil einwirken und vermieden werden muss, dass das Bauteil beschädigt wird. In addition, bonding connections are known from the prior art, which are formed by ultrasonic welding. In this case, the surface of an electronic component to be contacted has a metallization in the form of a copper coating, which must have a thickness of more than 10 .mu.m, since during bonding by means of ultrasonic welding high forces and energies act on the electronic component to be contacted and it must be avoided that the Component is damaged.
Offenbarung der ErfindungDisclosure of the invention
Ausgehend von dem dargestellten Stand der Technik liegt der Erfindung die Aufgabe zugrunde, eine Bondverbindung nach dem Oberbegriff des Anspruchs 1 derart weiterzubilden, dass diese unter Ausbildung eines Laserstrahlschweißverbindung zwischen dem Halbleiterbauelement und dem metallischen Verbindungselement besonders einfach und wirtschaftlich ausgebildet ist. Diese Aufgabe wird erfindungsgemäß bei einer Bondverbindung mit den Merkmalen des Anspruchs 1 dadurch gelöst, dass das Halbleiterbauelement auf der dem Verbindungselement zugewandten Seite mit einer im Wesentlichen aus Kupfer bestehenden Metallisierungsschicht ausgestattet ist. Durch die Verwendung von Kupfer für die Metallisierungsschicht wird ein besonders guter Wärmeübergang und eine besonders gute Stromleitung zwischen dem Verbindungselement und dem Halbleiterbauelement erzielt, so dass bereits die Einleitung relativ geringer Energien beim Laserstrahlschweißen für hinreichend feste Verbindungen zwischen dem Leitungselement und dem Halbleiterbauelement sorgen. Insbesondere ist es lediglich erforderlich, die Verbindung nur lokal zu erwärmen bzw. nur eine relativ geringe Kontaktkraft auf das Verbindungselement im Bereich des Halbleiterbauelements auszuüben. Based on the illustrated prior art, the invention has the object, a bond according to the preamble of claim 1 such that it is particularly simple and economical to form a laser beam welding connection between the semiconductor device and the metallic connecting element. This object is achieved in a bond with the features of claim 1, characterized in that the semiconductor device is provided on the side facing the connecting element with a metallization layer consisting essentially of copper. By using copper for the metallization layer, a particularly good heat transfer and a particularly good current conduction between the connection element and the semiconductor component is achieved, so that even the introduction of relatively low energies during laser beam welding ensure sufficiently firm connections between the line element and the semiconductor component. In particular, it is only necessary to heat the connection only locally or to exert only a relatively small contact force on the connecting element in the region of the semiconductor component.
Vorteilhafte Weiterbildungen der erfindungsgemäßen Bondverbindung sind in den Unteransprüchen aufgeführt. In den Rahmen der Erfindung fallen sämtliche Kombinationen aus zumindest zwei von in den Ansprüchen, der Beschreibung und/oder Figuren offenbarten Merkmalen. Advantageous developments of the bonding compound according to the invention are listed in the subclaims. All combinations of at least two features disclosed in the claims, the description and / or figures fall within the scope of the invention.
Besonders bevorzugt ist eine Dicke der Metallisierungsschicht (auf dem Halbleiterbauelement) zwischen 10µm und 50µm. Particularly preferred is a thickness of the metallization layer (on the semiconductor device) between 10 .mu.m and 50 .mu.m.
Ganz besonders bevorzugt ist eine konstruktive Ausgestaltung des Verbindungselements, bei der dieses bandförmig und als Stanz-/Biegeteil ausgebildet ist. Es findet somit ein vorgeformtes Verbindungselement Verwendung, das insbesondere durch die Bereitstellung zweier ebener Kontaktflächen, die sich in der Praxis auf unterschiedlichen Höhenniveaus befinden, besonders einfach verarbeiten bzw. elektrisch kontaktieren lässt. Hierbei ist die eine Kontaktstelle im Bereich des Verbindungselements zu dem Halbleiterbauelement vorgesehen, während die andere Kontaktfläche im Bereich zwischen dem Verbindungselement und z.B. der Leiterbahn eines Schaltungsträgers angeordnet ist. Very particularly preferred is a structural design of the connecting element, in which this is band-shaped and formed as a stamped / bent part. Thus, a preformed connecting element is used which can be processed particularly easily or electrically contacted, in particular, by the provision of two planar contact surfaces, which in practice are at different height levels. Here, the one contact point is provided in the region of the connecting element to the semiconductor device, while the other contact surface in the region between the connecting element and e.g. the conductor track of a circuit carrier is arranged.
In der Praxis haben sich für die Dimensionierung des Verbindungselements als günstig eine Breite zwischen 500µm und 4000µm (in Abhängigkeit von der Dimensionierung des zu kontaktierenden Halbleiterbauelements) sowie eine Dicke zwischen 100µm und 500µm erwiesen. In practice, a width of between 500 μm and 4000 μm (depending on the dimensioning of the semiconductor component to be contacted) and a thickness of between 100 μm and 500 μm has proven favorable for the dimensioning of the connecting element.
Die Verwendung einer Laserstrahlverschweißung zwischen dem Verbindungselement und den zu kontaktierenden Oberflächen hat den Vorteil, dass eine lokal sehr eng begrenzte Erwärmung und Verschweißung des Verbindungselements mit der der zugewandten Oberfläche ermöglicht wird. Um hierbei eine besonders sichere und flächenmäßig günstige Einleitung der Wärme in die Bauteile zu ermöglichen wird vorgeschlagen, dass die Schweißnaht eine geometrische Grundform in Form einer Linie, eines Kreises, eines Rechtecks o.ä. aufweist. Dadurch werden vor allem lokale thermische Überbeanspruchungen im Bereich des Halbleiterbauelements vermieden.The use of a laser beam welding between the connecting element and the surfaces to be contacted has the advantage that a locally very limited heating and welding of the connecting element is made possible with the facing surface. In order to enable a particularly safe and moderately favorable introduction of heat into the components, it is proposed that the weld be a geometric basic form in the form of a line, a circle, a rectangle o.ä. having. As a result, especially local thermal overloads in the region of the semiconductor device are avoided.
Bevorzugt ist der Einsatz bei Halbleiterbauelementen, bei der diese als Leistungshalbleiterbauelement in Form eines IGBTs, eines MOSFETs, einer Diode o.ä. ausgebildet sind. Preference is given to the use in semiconductor devices, in which this as a power semiconductor device in the form of an IGBT, a MOSFET, a diode o.ä. are formed.
Weitere Vorteile, Merkmale und Einzelheiten der Erfindung ergeben sich aus der nachfolgenden Beschreibung bevorzugter Ausführungsbeispiele sowie anhand der Zeichnung.Further advantages, features and details of the invention will become apparent from the following description of preferred embodiments and from the drawing.
Diese zeigt in: This shows in:
Gleiche Bauteile bzw. Bauteile mit gleicher Funktion sind in den Figuren mit den gleichen Bezugsziffern versehen. The same components or components with the same function are provided in the figures with the same reference numerals.
In den beiden Figuren ist eine erfindungsgemäße Bondverbindung
Bei dem Verbindungselement
Das Verbindungselement
Die Verbindung zwischen dem Verbindungselement
Als Laserstrahlschweißeinrichtung kommen alle üblicherweise im Bereich der Mikroelektronik verwendeten Laserstrahlschweißeinrichtungen in Frage, wesentlich ist lediglich, dass diese die Kontaktbereiche
Die soweit beschriebenen, erfindungsgemäßen Bondverbindungen
ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- DE 60017176 T2 [0002] DE 60017176 T2 [0002]
Claims (8)
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102015226136A1 (en) | 2015-12-21 | 2017-06-22 | Robert Bosch Gmbh | Electronic module and method for manufacturing an electronic module |
CN109249129A (en) * | 2017-07-14 | 2019-01-22 | 赛米控电子股份有限公司 | The method for manufacturing power electronic submodule by welding method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60017176T2 (en) | 1999-10-22 | 2005-05-25 | Medtronic, Inc., Minneapolis | A DEVICE AND METHOD FOR LASER WELDING OF TAPES FOR ELECTRICAL CONNECTIONS |
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JP4842118B2 (en) | 2006-01-24 | 2011-12-21 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
JP5103863B2 (en) | 2006-10-16 | 2012-12-19 | 富士電機株式会社 | Semiconductor device |
JP4775327B2 (en) | 2007-06-06 | 2011-09-21 | 富士電機株式会社 | Manufacturing method of semiconductor device |
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DE60017176T2 (en) | 1999-10-22 | 2005-05-25 | Medtronic, Inc., Minneapolis | A DEVICE AND METHOD FOR LASER WELDING OF TAPES FOR ELECTRICAL CONNECTIONS |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015226136A1 (en) | 2015-12-21 | 2017-06-22 | Robert Bosch Gmbh | Electronic module and method for manufacturing an electronic module |
CN109249129A (en) * | 2017-07-14 | 2019-01-22 | 赛米控电子股份有限公司 | The method for manufacturing power electronic submodule by welding method |
CN109249129B (en) * | 2017-07-14 | 2022-09-27 | 赛米控电子股份有限公司 | Method for producing power electronic modules by means of soldering |
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