DE102010021694A1 - Quarzglastiegel und Verfahren für dessen Herstellung - Google Patents

Quarzglastiegel und Verfahren für dessen Herstellung Download PDF

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Publication number
DE102010021694A1
DE102010021694A1 DE102010021694A DE102010021694A DE102010021694A1 DE 102010021694 A1 DE102010021694 A1 DE 102010021694A1 DE 102010021694 A DE102010021694 A DE 102010021694A DE 102010021694 A DE102010021694 A DE 102010021694A DE 102010021694 A1 DE102010021694 A1 DE 102010021694A1
Authority
DE
Germany
Prior art keywords
layer
quartz glass
bubble
graining
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102010021694A
Other languages
German (de)
English (en)
Inventor
Walter Lehmann
Thomas Kayser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Quarzglas GmbH and Co KG
Original Assignee
Heraeus Quarzglas GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Quarzglas GmbH and Co KG filed Critical Heraeus Quarzglas GmbH and Co KG
Priority to DE102010021694A priority Critical patent/DE102010021694A1/de
Priority to PCT/EP2011/058530 priority patent/WO2011147860A1/de
Priority to DE112011101800.2T priority patent/DE112011101800B4/de
Priority to CN201180025936.4A priority patent/CN102906037B/zh
Priority to JP2013511667A priority patent/JP5639264B2/ja
Publication of DE102010021694A1 publication Critical patent/DE102010021694A1/de
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
DE102010021694A 2010-05-27 2010-05-27 Quarzglastiegel und Verfahren für dessen Herstellung Withdrawn DE102010021694A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102010021694A DE102010021694A1 (de) 2010-05-27 2010-05-27 Quarzglastiegel und Verfahren für dessen Herstellung
PCT/EP2011/058530 WO2011147860A1 (de) 2010-05-27 2011-05-25 Quarzglastiegel und verfahren für dessen herstellung
DE112011101800.2T DE112011101800B4 (de) 2010-05-27 2011-05-25 Verfahren zur Herstellung eines Quarzglastiegels
CN201180025936.4A CN102906037B (zh) 2010-05-27 2011-05-25 石英玻璃坩埚及其制造方法
JP2013511667A JP5639264B2 (ja) 2010-05-27 2011-05-25 石英ガラスルツボを製造する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102010021694A DE102010021694A1 (de) 2010-05-27 2010-05-27 Quarzglastiegel und Verfahren für dessen Herstellung

Publications (1)

Publication Number Publication Date
DE102010021694A1 true DE102010021694A1 (de) 2011-12-01

Family

ID=44246948

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102010021694A Withdrawn DE102010021694A1 (de) 2010-05-27 2010-05-27 Quarzglastiegel und Verfahren für dessen Herstellung
DE112011101800.2T Expired - Fee Related DE112011101800B4 (de) 2010-05-27 2011-05-25 Verfahren zur Herstellung eines Quarzglastiegels

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE112011101800.2T Expired - Fee Related DE112011101800B4 (de) 2010-05-27 2011-05-25 Verfahren zur Herstellung eines Quarzglastiegels

Country Status (4)

Country Link
JP (1) JP5639264B2 (ja)
CN (1) CN102906037B (ja)
DE (2) DE102010021694A1 (ja)
WO (1) WO2011147860A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014048791A1 (de) * 2012-09-27 2014-04-03 Heraeus Quarzglas Gmbh & Co. Kg Ziehen eines halbleiter-einkristalls nach dem czochralski-verfahren und dafür geeigneter quarzglastiegel

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5763027B2 (ja) * 2012-09-25 2015-08-12 コバレントマテリアル株式会社 シリコン単結晶引上げ用シリカガラスルツボの製造方法およびその製造装置
CN103526280A (zh) * 2013-10-12 2014-01-22 南通路博石英材料有限公司 一种内表面具有凹槽拉晶用石英玻璃坩埚的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1045046A2 (de) 1999-04-16 2000-10-18 Heraeus Quarzglas GmbH & Co. KG Quarzglas-Tiegel und Herstellungsverfahren dafür
JP2004250304A (ja) 2003-02-21 2004-09-09 Japan Siper Quarts Corp 湯面振動を抑制した石英ガラスルツボ
EP1532297A1 (en) 2002-07-31 2005-05-25 Heraeus Quarzglas GmbH & Co. KG Quartz glass crucible for pulling up silicon single crystal and method for producing the same
DE102008030310B3 (de) 2008-06-30 2009-06-18 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines Quarzglastiegels
EP2236469A1 (en) * 2009-04-02 2010-10-06 Japan Super Quartz Corporation Vitreous silica crucible for pulling silicon single crystals

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4713104A (en) * 1986-03-31 1987-12-15 Gte Products Corporation Quartz glass crucibles
JPH0920586A (ja) * 1995-06-30 1997-01-21 Toshiba Ceramics Co Ltd シリコン単結晶引上げ用石英ガラスルツボの製造方法
JP2002003228A (ja) * 2000-06-19 2002-01-09 Toshiba Ceramics Co Ltd 石英ガラスルツボ製造装置
KR100847500B1 (ko) * 2006-03-30 2008-07-22 코바렌트 마테리얼 가부시키가이샤 실리카 유리 도가니
JP5273512B2 (ja) * 2007-10-25 2013-08-28 株式会社Ｓｕｍｃｏ 石英ガラスルツボとその製造方法および用途

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1045046A2 (de) 1999-04-16 2000-10-18 Heraeus Quarzglas GmbH & Co. KG Quarzglas-Tiegel und Herstellungsverfahren dafür
EP1532297A1 (en) 2002-07-31 2005-05-25 Heraeus Quarzglas GmbH & Co. KG Quartz glass crucible for pulling up silicon single crystal and method for producing the same
JP2004250304A (ja) 2003-02-21 2004-09-09 Japan Siper Quarts Corp 湯面振動を抑制した石英ガラスルツボ
DE102008030310B3 (de) 2008-06-30 2009-06-18 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines Quarzglastiegels
EP2236469A1 (en) * 2009-04-02 2010-10-06 Japan Super Quartz Corporation Vitreous silica crucible for pulling silicon single crystals

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014048791A1 (de) * 2012-09-27 2014-04-03 Heraeus Quarzglas Gmbh & Co. Kg Ziehen eines halbleiter-einkristalls nach dem czochralski-verfahren und dafür geeigneter quarzglastiegel
CN104662210A (zh) * 2012-09-27 2015-05-27 赫罗伊斯石英玻璃股份有限两合公司 根据切克劳斯基法提拉半导体单晶和适用于其的石英玻璃坩埚
US9856576B2 (en) 2012-09-27 2018-01-02 Heraeus Quarzglas Gmbh & Co. Kg Pulling a semiconductor single crystal according to the Czochralski method
US10287705B2 (en) 2012-09-27 2019-05-14 Heraeus Quarzglas Gmbh & Co. Kg Pulling a semiconductor single crystal according to the Czochralski method and silica glass crucible suitable therefor

Also Published As

Publication number Publication date
CN102906037B (zh) 2015-06-17
DE112011101800A5 (de) 2013-05-08
JP5639264B2 (ja) 2014-12-10
WO2011147860A1 (de) 2011-12-01
JP2013527113A (ja) 2013-06-27
DE112011101800B4 (de) 2016-01-21
CN102906037A (zh) 2013-01-30

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R120 Application withdrawn or ip right abandoned

Effective date: 20121128