DE102009011496A1 - Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung - Google Patents
Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung Download PDFInfo
- Publication number
- DE102009011496A1 DE102009011496A1 DE200910011496 DE102009011496A DE102009011496A1 DE 102009011496 A1 DE102009011496 A1 DE 102009011496A1 DE 200910011496 DE200910011496 DE 200910011496 DE 102009011496 A DE102009011496 A DE 102009011496A DE 102009011496 A1 DE102009011496 A1 DE 102009011496A1
- Authority
- DE
- Germany
- Prior art keywords
- substrates
- furnace chamber
- layers
- chalcogen
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052798 chalcogen Inorganic materials 0.000 title claims abstract description 58
- 150000001787 chalcogens Chemical class 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000002243 precursor Substances 0.000 title claims abstract description 25
- 230000008569 process Effects 0.000 title claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 21
- 238000011084 recovery Methods 0.000 title abstract description 3
- 239000007789 gas Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000012159 carrier gas Substances 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 238000004064 recycling Methods 0.000 claims description 15
- 238000007599 discharging Methods 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 15
- 229910052711 selenium Inorganic materials 0.000 description 15
- 239000011669 selenium Substances 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000010949 copper Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000002699 waste material Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 238000010924 continuous production Methods 0.000 description 4
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 4
- 229910000058 selane Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5866—Treatment with sulfur, selenium or tellurium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200910011496 DE102009011496A1 (de) | 2009-03-06 | 2009-03-06 | Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung |
| TW99103930A TW201038769A (en) | 2009-03-06 | 2010-02-09 | Process and device for the thermal conversion of metallic precursor layers into semiconducting layers with chalcogen recovery |
| PCT/IB2010/000462 WO2010100560A1 (fr) | 2009-03-06 | 2010-03-05 | Procédé et dispositif pour convertir par voie thermique des couches de précurseurs métalliques en couches semi-conductrices avec récupération des chalcogènes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200910011496 DE102009011496A1 (de) | 2009-03-06 | 2009-03-06 | Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102009011496A1 true DE102009011496A1 (de) | 2010-09-16 |
Family
ID=42288748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE200910011496 Withdrawn DE102009011496A1 (de) | 2009-03-06 | 2009-03-06 | Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE102009011496A1 (fr) |
| TW (1) | TW201038769A (fr) |
| WO (1) | WO2010100560A1 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011053049A1 (de) * | 2011-08-26 | 2013-02-28 | DSeTec GmbH & Co. KG | Vorrichtung und Verfahren zur Beschichtung eines Substrats |
| DE102011053050A1 (de) * | 2011-08-26 | 2013-02-28 | DSeTec GmbH & Co. KG | Vorrichtung und Verfahren zur Beschichtung eines Substrats |
| WO2013030088A1 (fr) | 2011-08-26 | 2013-03-07 | DSeTec GmbH & Co. KG | Dispositif et procédé de revêtement d'un substrat |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2469580A1 (fr) * | 2010-12-27 | 2012-06-27 | Nexcis | Interface améliorée entre une couche de matériau I-III-VI2 et un substrat de molybdène |
| TWI459569B (zh) * | 2011-08-16 | 2014-11-01 | Ind Tech Res Inst | 太陽能電池模組之回收方法 |
| DE102020126101A1 (de) * | 2020-10-06 | 2022-04-07 | Thyssenkrupp Steel Europe Ag | Beschichtungsvorrichtung zum Ablagern eines Beschichtungsmaterials auf einem Substrat |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0318315A2 (fr) | 1987-11-27 | 1989-05-31 | Siemens Solar Industries L.P. | Procédé de fabrication d'une cellule solaire à couches minces |
| DE29607815U1 (de) * | 1996-05-03 | 1996-06-20 | Centrotherm Elektrische Anlagen GmbH + Co, 89143 Blaubeuren | Anordnung zur Entgiftung von Abgasen |
| EP0662247B1 (fr) | 1992-09-22 | 1999-03-10 | Siemens Aktiengesellschaft | Procede rapide de realisation d'un semi-conducteur en chalcopyrite sur un substrat |
| DE102004024601A1 (de) * | 2004-05-13 | 2005-12-01 | Klaus Dr. Kalberlah | Verfahren und Einrichtung zur sequentiellen Bandabscheidung von Selen auf Chalkopyrit-Dünnschicht-Solarzellen |
| WO2007047888A2 (fr) * | 2005-10-19 | 2007-04-26 | Solopower, Inc. | Procédé et appareil permettant de convertir des couches de précurseurs en absorbeurs photovoltaiques |
| WO2009033674A2 (fr) | 2007-09-11 | 2009-03-19 | Centrotherm Photovoltaics Ag | Procédé et appareil pour convertir thermiquement des couches précurseurs métalliques en couches semiconductrices, et module solaire |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3261726A (en) * | 1961-10-09 | 1966-07-19 | Monsanto Co | Production of epitaxial films |
| JPH1012635A (ja) * | 1996-04-26 | 1998-01-16 | Yazaki Corp | Ｉ−ｉｉｉ−ｖｉ２系薄膜層の形成方法及びその形成装置 |
| JP2001049432A (ja) * | 1999-08-02 | 2001-02-20 | Sony Corp | ワーク移動式反応性スパッタ装置とワーク移動式反応性スパッタ方法 |
| CN101578707B (zh) * | 2006-11-10 | 2012-08-22 | 索罗能源公司 | 用于形成太阳能电池吸收体的前驱物膜的卷对卷反应 |
| EP2266145A2 (fr) * | 2008-03-04 | 2010-12-29 | Brent Bollman | Procédés et dispositifs pour le traitement d'une couche de précurseur dans un environnement du groupe via |
-
2009
- 2009-03-06 DE DE200910011496 patent/DE102009011496A1/de not_active Withdrawn
-
2010
- 2010-02-09 TW TW99103930A patent/TW201038769A/zh unknown
- 2010-03-05 WO PCT/IB2010/000462 patent/WO2010100560A1/fr active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0318315A2 (fr) | 1987-11-27 | 1989-05-31 | Siemens Solar Industries L.P. | Procédé de fabrication d'une cellule solaire à couches minces |
| EP0662247B1 (fr) | 1992-09-22 | 1999-03-10 | Siemens Aktiengesellschaft | Procede rapide de realisation d'un semi-conducteur en chalcopyrite sur un substrat |
| DE29607815U1 (de) * | 1996-05-03 | 1996-06-20 | Centrotherm Elektrische Anlagen GmbH + Co, 89143 Blaubeuren | Anordnung zur Entgiftung von Abgasen |
| DE102004024601A1 (de) * | 2004-05-13 | 2005-12-01 | Klaus Dr. Kalberlah | Verfahren und Einrichtung zur sequentiellen Bandabscheidung von Selen auf Chalkopyrit-Dünnschicht-Solarzellen |
| WO2007047888A2 (fr) * | 2005-10-19 | 2007-04-26 | Solopower, Inc. | Procédé et appareil permettant de convertir des couches de précurseurs en absorbeurs photovoltaiques |
| WO2009033674A2 (fr) | 2007-09-11 | 2009-03-19 | Centrotherm Photovoltaics Ag | Procédé et appareil pour convertir thermiquement des couches précurseurs métalliques en couches semiconductrices, et module solaire |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011053049A1 (de) * | 2011-08-26 | 2013-02-28 | DSeTec GmbH & Co. KG | Vorrichtung und Verfahren zur Beschichtung eines Substrats |
| DE102011053050A1 (de) * | 2011-08-26 | 2013-02-28 | DSeTec GmbH & Co. KG | Vorrichtung und Verfahren zur Beschichtung eines Substrats |
| WO2013030088A1 (fr) | 2011-08-26 | 2013-03-07 | DSeTec GmbH & Co. KG | Dispositif et procédé de revêtement d'un substrat |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010100560A1 (fr) | 2010-09-10 |
| TW201038769A (en) | 2010-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20131001 |