DE102009000903B4 - Gasduschenmodul - Google Patents

Gasduschenmodul Download PDF

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Publication number
DE102009000903B4
DE102009000903B4 DE102009000903.5A DE102009000903A DE102009000903B4 DE 102009000903 B4 DE102009000903 B4 DE 102009000903B4 DE 102009000903 A DE102009000903 A DE 102009000903A DE 102009000903 B4 DE102009000903 B4 DE 102009000903B4
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Germany
Prior art keywords
gas
shower
module according
channel
manifold
Prior art date
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DE102009000903.5A
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German (de)
English (en)
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DE102009000903A1 (de
Inventor
Ming-Tung Chiang
Jung-Chen Chien
Jung-Chen Ho
Chih-Yung Huang
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Industrial Technology Research Institute ITRI
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Industrial Technology Research Institute ITRI
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Publication of DE102009000903A1 publication Critical patent/DE102009000903A1/de
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE102009000903.5A 2008-11-26 2009-02-16 Gasduschenmodul Active DE102009000903B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW097145607A TWI437622B (zh) 2008-11-26 2008-11-26 氣體噴灑模組
TW097145607 2008-11-26

Publications (2)

Publication Number Publication Date
DE102009000903A1 DE102009000903A1 (de) 2010-05-27
DE102009000903B4 true DE102009000903B4 (de) 2015-05-28

Family

ID=42114720

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009000903.5A Active DE102009000903B4 (de) 2008-11-26 2009-02-16 Gasduschenmodul

Country Status (4)

Country Link
US (1) US20100126418A1 (zh)
JP (1) JP4971376B2 (zh)
DE (1) DE102009000903B4 (zh)
TW (1) TWI437622B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201222630A (en) 2010-11-16 2012-06-01 Ind Tech Res Inst Film deposition system and method and gas supplying apparatus being used therein
JP6038618B2 (ja) * 2011-12-15 2016-12-07 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
WO2014018275A1 (en) 2012-07-27 2014-01-30 Applied Materials, Inc. Methods and apparatus for delivering process gases to a substrate
DE102013101534A1 (de) * 2013-02-15 2014-08-21 Aixtron Se Gasverteiler für einen CVD-Reaktor
CN106399974A (zh) * 2016-10-10 2017-02-15 无锡宏纳科技有限公司 常压化学气相淀积反应腔
CN106319482A (zh) * 2016-10-10 2017-01-11 无锡宏纳科技有限公司 增压式化学气相淀积反应腔
CN111101117B (zh) * 2018-10-29 2022-07-22 北京北方华创微电子装备有限公司 匀气装置和半导体处理设备

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5595606A (en) * 1995-04-20 1997-01-21 Tokyo Electron Limited Shower head and film forming apparatus using the same
US5968276A (en) * 1997-07-11 1999-10-19 Applied Materials, Inc. Heat exchange passage connection
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
US6148761A (en) * 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6444042B1 (en) * 1999-02-25 2002-09-03 Hyundai Electronics Industries Co., Ltd. Gas injection system for chemical vapor deposition device
US6478872B1 (en) * 1999-01-18 2002-11-12 Samsung Electronics Co., Ltd. Method of delivering gas into reaction chamber and shower head used to deliver gas
US20040191413A1 (en) * 2001-07-19 2004-09-30 Young Hoon Park Reactor for thin film deposition and method for depositing thin film on wafer using the reactor
US20050061243A1 (en) * 2003-09-18 2005-03-24 Demetrius Sarigiannis Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US6921437B1 (en) * 2003-05-30 2005-07-26 Aviza Technology, Inc. Gas distribution system
US20060263522A1 (en) * 2005-05-19 2006-11-23 Piezonics Co., Ltd. Apparatus for chemical vapor deposition (CVD) with showerhead and method thereof
US20070163440A1 (en) * 2006-01-19 2007-07-19 Atto Co., Ltd. Gas separation type showerhead
US20070210037A1 (en) * 2006-02-24 2007-09-13 Toshifumi Ishida Cooling block forming electrode
US20080236495A1 (en) * 2007-03-27 2008-10-02 Structured Materials Inc. Showerhead for chemical vapor deposition (CVD) apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331260B1 (en) * 1990-01-24 2001-12-18 The United States Of America As Represented By The Secretary Of The Air Force VD process and apparatus for producing stand-alone thin films
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
WO2002008487A1 (en) * 2000-07-24 2002-01-31 The University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
TWI224815B (en) * 2001-08-01 2004-12-01 Tokyo Electron Ltd Gas processing apparatus and gas processing method
JP2004115777A (ja) * 2002-09-06 2004-04-15 Ulvac Japan Ltd 抗菌性高分子及びその製造方法、抗菌性高分子被膜及びその作製方法、並びにこの被膜を表面に有する物品
JP4513329B2 (ja) * 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
US7674393B2 (en) * 2005-03-25 2010-03-09 Tokyo Electron Limited Etching method and apparatus
US8313610B2 (en) * 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US20090095222A1 (en) * 2007-10-16 2009-04-16 Alexander Tam Multi-gas spiral channel showerhead
US8852696B2 (en) * 2008-05-30 2014-10-07 Alta Devices, Inc. Method for vapor deposition
US8221582B2 (en) * 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5595606A (en) * 1995-04-20 1997-01-21 Tokyo Electron Limited Shower head and film forming apparatus using the same
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
US5968276A (en) * 1997-07-11 1999-10-19 Applied Materials, Inc. Heat exchange passage connection
US6148761A (en) * 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6478872B1 (en) * 1999-01-18 2002-11-12 Samsung Electronics Co., Ltd. Method of delivering gas into reaction chamber and shower head used to deliver gas
US6444042B1 (en) * 1999-02-25 2002-09-03 Hyundai Electronics Industries Co., Ltd. Gas injection system for chemical vapor deposition device
US20040191413A1 (en) * 2001-07-19 2004-09-30 Young Hoon Park Reactor for thin film deposition and method for depositing thin film on wafer using the reactor
US6921437B1 (en) * 2003-05-30 2005-07-26 Aviza Technology, Inc. Gas distribution system
US20050061243A1 (en) * 2003-09-18 2005-03-24 Demetrius Sarigiannis Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US20060263522A1 (en) * 2005-05-19 2006-11-23 Piezonics Co., Ltd. Apparatus for chemical vapor deposition (CVD) with showerhead and method thereof
US20070163440A1 (en) * 2006-01-19 2007-07-19 Atto Co., Ltd. Gas separation type showerhead
US20070210037A1 (en) * 2006-02-24 2007-09-13 Toshifumi Ishida Cooling block forming electrode
US20080236495A1 (en) * 2007-03-27 2008-10-02 Structured Materials Inc. Showerhead for chemical vapor deposition (CVD) apparatus

Also Published As

Publication number Publication date
JP2010126810A (ja) 2010-06-10
DE102009000903A1 (de) 2010-05-27
TW201021095A (en) 2010-06-01
US20100126418A1 (en) 2010-05-27
JP4971376B2 (ja) 2012-07-11
TWI437622B (zh) 2014-05-11

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