DE102007041392A1 - Verfahren zum Fertigen einer Solarzelle mit einer doppellagigen Dielektrikumschicht - Google Patents
Verfahren zum Fertigen einer Solarzelle mit einer doppellagigen Dielektrikumschicht Download PDFInfo
- Publication number
- DE102007041392A1 DE102007041392A1 DE102007041392A DE102007041392A DE102007041392A1 DE 102007041392 A1 DE102007041392 A1 DE 102007041392A1 DE 102007041392 A DE102007041392 A DE 102007041392A DE 102007041392 A DE102007041392 A DE 102007041392A DE 102007041392 A1 DE102007041392 A1 DE 102007041392A1
- Authority
- DE
- Germany
- Prior art keywords
- dielectric layer
- layer
- solar cell
- silicon
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000009792 diffusion process Methods 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 230000003647 oxidation Effects 0.000 claims abstract description 12
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 239000002019 doping agent Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000009987 spinning Methods 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 162
- 210000004027 cell Anatomy 0.000 description 66
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000376 reactant Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007041392A DE102007041392A1 (de) | 2007-08-31 | 2007-08-31 | Verfahren zum Fertigen einer Solarzelle mit einer doppellagigen Dielektrikumschicht |
| PCT/EP2008/005339 WO2009030299A2 (fr) | 2007-08-31 | 2008-06-30 | Procédé de fabrication d'une cellule solaire comportant une double couche de diélectrique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007041392A DE102007041392A1 (de) | 2007-08-31 | 2007-08-31 | Verfahren zum Fertigen einer Solarzelle mit einer doppellagigen Dielektrikumschicht |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102007041392A1 true DE102007041392A1 (de) | 2009-03-05 |
Family
ID=40299031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102007041392A Withdrawn DE102007041392A1 (de) | 2007-08-31 | 2007-08-31 | Verfahren zum Fertigen einer Solarzelle mit einer doppellagigen Dielektrikumschicht |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE102007041392A1 (fr) |
| WO (1) | WO2009030299A2 (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010025983A1 (de) * | 2010-03-03 | 2011-09-08 | Centrotherm Photovoltaics Ag | Solarzelle mit dielektrischer Rückseitenverspiegelung und Verfahren zu deren Herstellung |
| WO2011124409A3 (fr) * | 2010-04-09 | 2012-05-10 | Robert Bosch Gmbh | Procédé de fabrication d'une cellule solaire |
| DE102011051707A1 (de) | 2011-07-08 | 2013-01-10 | Schott Solar Ag | Verfahren zum Herstellen einer Solarzelle |
| CN111574071A (zh) * | 2020-06-01 | 2020-08-25 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种高透过宽色系盖板玻璃的制备方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102938431B (zh) * | 2012-10-19 | 2015-09-16 | 上海中智光纤通讯有限公司 | 一种太阳电池的硅片清洗制绒方法 |
| JP5994895B2 (ja) * | 2015-04-24 | 2016-09-21 | 信越化学工業株式会社 | 太陽電池の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4217428A1 (de) * | 1991-12-09 | 1993-06-17 | Deutsche Aerospace | Hochleistungs-solarzellenstruktur |
| EP1763086A1 (fr) * | 2005-09-09 | 2007-03-14 | Interuniversitair Micro-Elektronica Centrum | Cellule solaire avec une couche épaisse de passivation d'oxyde de silicium et de nitrure de silicium et son procédé de fabrication |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5792280A (en) * | 1994-05-09 | 1998-08-11 | Sandia Corporation | Method for fabricating silicon cells |
| US6323143B1 (en) * | 2000-03-24 | 2001-11-27 | Taiwan Semiconductor Manufacturing Company | Method for making silicon nitride-oxide ultra-thin gate insulating layers for submicrometer field effect transistors |
| JP2006073617A (ja) * | 2004-08-31 | 2006-03-16 | Sharp Corp | 太陽電池およびその製造方法 |
-
2007
- 2007-08-31 DE DE102007041392A patent/DE102007041392A1/de not_active Withdrawn
-
2008
- 2008-06-30 WO PCT/EP2008/005339 patent/WO2009030299A2/fr active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4217428A1 (de) * | 1991-12-09 | 1993-06-17 | Deutsche Aerospace | Hochleistungs-solarzellenstruktur |
| EP1763086A1 (fr) * | 2005-09-09 | 2007-03-14 | Interuniversitair Micro-Elektronica Centrum | Cellule solaire avec une couche épaisse de passivation d'oxyde de silicium et de nitrure de silicium et son procédé de fabrication |
Non-Patent Citations (2)
| Title |
|---|
| Lüdemann, R. [u.a.]: Novel Processing of Solar Cel ls with Porous Silicon Texturing. In: Photovoltaic Specialists Conference, Conf. Rec. of 28th IEEE. 2000, ISBN: 0-7803-5772, S. 299-302 |
| Lüdemann, R. [u.a.]: Novel Processing of Solar Cells with Porous … Silicon Texturing. In: Photovoltaic Specialists Conference, Conf. … Rec. of 28th IEEE. 2000, ISBN: 0-7803-5772, S. 299-302; * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010025983A1 (de) * | 2010-03-03 | 2011-09-08 | Centrotherm Photovoltaics Ag | Solarzelle mit dielektrischer Rückseitenverspiegelung und Verfahren zu deren Herstellung |
| WO2011107094A3 (fr) * | 2010-03-03 | 2012-03-15 | Centrotherm Photovoltaics Ag | Cellule solaire à couche réfléchissante arrière diélectrique et procédé de fabrication |
| US9276155B2 (en) | 2010-03-03 | 2016-03-01 | Rct Solutions Gmbh | Solar cell having dielectric back reflective coating and method for the production thereof |
| WO2011124409A3 (fr) * | 2010-04-09 | 2012-05-10 | Robert Bosch Gmbh | Procédé de fabrication d'une cellule solaire |
| CN102822988A (zh) * | 2010-04-09 | 2012-12-12 | 罗伯特·博世有限公司 | 用于制造太阳能的电池的方法 |
| JP2013524524A (ja) * | 2010-04-09 | 2013-06-17 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 太陽電池の製造方法 |
| CN102822988B (zh) * | 2010-04-09 | 2016-11-16 | 太阳世界工业图林根有限责任公司 | 用于制造太阳能的电池的方法 |
| DE102011051707A1 (de) | 2011-07-08 | 2013-01-10 | Schott Solar Ag | Verfahren zum Herstellen einer Solarzelle |
| WO2013007622A1 (fr) | 2011-07-08 | 2013-01-17 | Schott Solar Ag | Procédé de fabrication d'une cellule solaire |
| CN111574071A (zh) * | 2020-06-01 | 2020-08-25 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种高透过宽色系盖板玻璃的制备方法 |
| CN111574071B (zh) * | 2020-06-01 | 2022-06-24 | 中建材玻璃新材料研究院集团有限公司 | 一种高透过宽色系盖板玻璃的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009030299A2 (fr) | 2009-03-12 |
| WO2009030299A3 (fr) | 2010-03-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |