EP2135291A2 - Procédé de fabrication d'une cellule solaire et cellule solaire ainsi fabriquée - Google Patents

Procédé de fabrication d'une cellule solaire et cellule solaire ainsi fabriquée

Info

Publication number
EP2135291A2
EP2135291A2 EP08716221A EP08716221A EP2135291A2 EP 2135291 A2 EP2135291 A2 EP 2135291A2 EP 08716221 A EP08716221 A EP 08716221A EP 08716221 A EP08716221 A EP 08716221A EP 2135291 A2 EP2135291 A2 EP 2135291A2
Authority
EP
European Patent Office
Prior art keywords
layer
solar cell
silicon substrate
doped
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08716221A
Other languages
German (de)
English (en)
Inventor
Dirk Habermann
Patrik MÜLLER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schmid Technology Systems GmbH
Original Assignee
Schmid Technology Systems GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Technology Systems GmbH filed Critical Schmid Technology Systems GmbH
Publication of EP2135291A2 publication Critical patent/EP2135291A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Definitions

  • the invention relates to a method for producing a solar cell from silicon or from a silicon substrate and to a solar cell produced by such a method.
  • the performance of solar cells is usually influenced by the type of surface of the solar cell or a surface coating.
  • the focus here is on the antireflection and passivation properties, in particular to allow the greatest possible incidence of sunlight into the solar cell.
  • a solar cell has an antireflection layer on the front side, for example SiN.
  • the production of a conventional solar cell involves a sequence of process steps, which are shown below in abbreviated form.
  • the basis is usually mono- or polycrystalline p-Si wafers, which are textured to improve the absorption properties of the surface via an etching process.
  • This etching process is carried out in monocrystalline silicon with a mixture of sodium or potassium hydroxide solution with isopropyl alcohol.
  • Polycrystalline silicon is etched with a solution of hydrofluoric and nitric acid.
  • further etching-cleaning sequences are carried out in order to optimally prepare the surface for the following diffusion process. In this process, a pn junction in the silicon is created by the diffusion of phosphorus to a depth of about 0.5 microns.
  • the pn junction separates the carriers formed by light.
  • a Phosphorus source heated, usually a gas mixture or an aqueous solution.
  • phosphorus penetrates into the silicon surface.
  • the phosphorus-doped layer is negatively conductive in contrast to the positively-conducting boron-doped base.
  • a phosphorous glass is formed on the surface, which is removed in the subsequent steps by etching with HF.
  • a layer about 80 nm thick mostly consisting of SiN: H, is applied to the silicon surface for reducing the reflection and for passivation.
  • the invention has for its object to provide an aforementioned method and a solar cell thus prepared, with which disadvantages of the prior art can be avoided and in particular the efficiency of a solar cell can be further increased.
  • Advantageous and preferred embodiments of the invention are the subject of further claims and are explained in more detail below.
  • the wording of the claims is incorporated herein by express reference.
  • the wording of the priority application DE 102007012268.5 of March 8, 2007 of the same Applicant is incorporated by express reference into the content of the present specification.
  • a first layer having an optical refractive index n is applied to a doped silicon substrate, which is already pretreated for the further production of a solar cell, at least on one side, wherein the refractive index is between 3.5 and 4.0 lies.
  • a second layer with an optical refractive index n between 1, 9 and 2.2 is applied on this first layer.
  • a two-layer structure for a surface coating of a solar cell or an antireflection layer is provided.
  • the reflection of light falling on the solar cell can be further reduced, so that more light is incident on the solar cell and its efficiency is thus higher.
  • a passivation of the front side of the solar cell can also be improved by such a multilayer structure.
  • the first layer may have a refractive index between 3.6 and 3.9. It may comprise or consist of silicon and / or germanium. Advantageously, it consists of a- SiGe or a-SiGe: H. In this case, therefore, this layer of this material is not used as a semiconductor layer, but it should act antireflective.
  • the second layer may have a refractive index n which is between 1.94 and 2.1.
  • n refractive index
  • the second layer can comprise or consist of silicon, advantageously SiN (x): H.
  • each but both sides of the solar cell on such a double layer structure at least if both sides are to be irradiated with light.
  • both sides of the silicon substrate are coated with the first layer.
  • the second layer can be applied to both sides. So a more manageable process technology is possible.
  • the first layer may comprise silicon and germanium, for example the abovementioned compounds. It can be provided that at least the first layer in itself, in particular also the second layer or the first layer and the second layer together, have a gradient of the concentration of germanium which increases. Such a gradient can be produced, for example, during production or application of the layers. This also has a positive influence on the antireflection properties and the passivation properties.
  • Such a contact is advantageously metallic or consists of metal. It can be particularly advantageous linear or lattice-like, but at least take on a front side of the solar cell only small area for lowest possible shading.
  • an electrical contact such as is applied as a line contact, is made so that it is not directly touched by the first layer or has no connection to this.
  • the first layer through a dielectric layer of the be separated electrical contact, wherein such a dielectric layer consists for example of SiN.
  • the dielectric layer is formed by the second layer.
  • the second layer is applied to the first layer, wherein the second layer is then also introduced into the areas which have been removed in the first layer corresponding to the structural course.
  • the second layer is patterned with a thinner course or removed except for the underlying silicon substrate in the form that in the resulting structure, the electrical contacts can be introduced with the desired course.
  • a structuring of the layers can be done mechanically, for example, but advantageously with a laser.
  • the silicon substrate can be n-doped for preparation prior to the application of the layers according to the invention on an upper side, advantageously with phosphorus.
  • a p-doped layer can be produced, which should be thinner and which is advantageously doped with or consisting of aSiGe-boron.
  • Fig. 2 shows a modification of the solar cell of Fig. 1 with a slightly modified contact arrangement on the front and
  • Fig. 3 shows a further modification of the solar cell of Fig. 1 with again modified contacting at the front and back.
  • a solar cell 20 is shown in section.
  • a substrate 4 of p-doped silicon is on the in the drawing upwards send front side a thinner layer 3 of phosphorus-doped n-silicon applied.
  • a thinner layer 3 of phosphorus-doped n-silicon is applied.
  • a front first antireflection layer 2 having an optical refractive index n between 3.6 and 3.9.
  • a front second antireflection layer 1 is applied.
  • Their optical refractive index n is between 1.94 and 2.1.
  • a back-side first antireflection layer 5 is provided, whose refractive index n corresponds to the front first antireflection layer 2.
  • a back-side second antireflection layer 6 is provided, whose refractive index n in turn corresponds to the front first antireflection layer 1.
  • the coating of the substrate 4 or the previous doping has been explained in the introduction.
  • the front and the back-side first antireflection layers 2 and 5 are applied to the substrate 4 with the front-side n-silicon layer 3.
  • the front and rear second antireflection layers 1 and 6 are applied.
  • trenches are introduced into the front side or the front first and second antireflection layers 1 and 2, for example by laser processing.
  • M eta I contacts 9 are introduced into these trenches in the manner described above, for example printed.
  • the electrical contact 9 is advantageously made of aluminum and also contacts the n-silicon layer 3.
  • FIG. 2 shows a further solar cell 120. It in turn consists of a substrate 104 as previously described with reference to FIG. 1, which has a phosphorus-doped n-silicon layer 103 on its upper side. On the front and back first antireflection layers 102 and 105 are applied. In turn, second antireflection layers 101 and 106 are applied to these.
  • the optical refractive indices may be as described for Fig. 1.
  • the advantage here is that the metallic contact 109, as described above, is only directly connected to or contacted with the n-silicon layer 103, but not with the front first antireflection layer 102.
  • FIG. 3 shows a further variation of a solar cell 220 which, similar to FIG. 2, also provides for the formation of the front-side contact-making on the rear side. That is, between the backside first antireflective layer 205 and the backside metal contacts 207 made of aluminum, a part of the rear side second antireflection layer 206 with portions 213 reaches the rear side of the substrate 204. The sections 213 form a dielectric layer for insulating the rear metal contact 207 against the rear-side first anti-reflection layer 205. Again, the aluminum Backsurfacefield 208 is formed again.
  • the structure of the solar cell 220 having the substrate 204, n-type silicon layer 203, and antireflection front coating by the front first antireflection layer 202 and the front second antireflection layer 201 having the front metal contact 209 corresponds to the structure of Fig. 2. That is true also for the manufacturing process.
  • front and rear contacts are the same in the figures shown. However, they may differ, for example, linear contacts may be provided on one side and different forms of contact on the other side. Due to the properties of the first antireflection coating, in particular on the front side, to the silicon substrate underneath, the optical properties can be optimally adjusted. Furthermore, as tension-free as possible a coating of the silicon substrate is possible.

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une cellule solaire (20). Sur la face avant et la face arrière d'un substrat en silicium (4), on applique d'abord une première couche anti-réflexion (2, 5) ayant un indice de réfraction optique n compris entre 3,6 et 3,9. On applique sur cette couche une deuxième couche anti-réflexion (1, 6) ayant un indice de réfraction optique n compris entre 1,94 et 2,1. Les couches anti-réflexion (1, 2, 5, 6) sont sectionnées jusqu'au substrat en silicium (4), pour amener des contacts métalliques (7, 9) jusqu'au substrat en silicium (4).
EP08716221A 2007-03-08 2008-03-04 Procédé de fabrication d'une cellule solaire et cellule solaire ainsi fabriquée Withdrawn EP2135291A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007012268A DE102007012268A1 (de) 2007-03-08 2007-03-08 Verfahren zur Herstellung einer Solarzelle sowie damit hergestellte Solarzelle
PCT/EP2008/001702 WO2008107156A2 (fr) 2007-03-08 2008-03-04 Procédé de fabrication d'une cellule solaire et cellule solaire ainsi fabriquée

Publications (1)

Publication Number Publication Date
EP2135291A2 true EP2135291A2 (fr) 2009-12-23

Family

ID=39678057

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08716221A Withdrawn EP2135291A2 (fr) 2007-03-08 2008-03-04 Procédé de fabrication d'une cellule solaire et cellule solaire ainsi fabriquée

Country Status (12)

Country Link
US (1) US20100018580A1 (fr)
EP (1) EP2135291A2 (fr)
JP (1) JP2010520631A (fr)
KR (1) KR20090129422A (fr)
CN (1) CN101730940A (fr)
AU (1) AU2008224121A1 (fr)
CA (1) CA2679685A1 (fr)
DE (1) DE102007012268A1 (fr)
IL (1) IL200696A0 (fr)
MX (1) MX2009009665A (fr)
TW (1) TW200901484A (fr)
WO (1) WO2008107156A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7993700B2 (en) 2007-03-01 2011-08-09 Applied Materials, Inc. Silicon nitride passivation for a solar cell
DE102008063558A1 (de) * 2008-12-08 2010-06-10 Gebr. Schmid Gmbh & Co. Verfahren zur Bearbeitung der Oberfläche eines Wafers zur Herstellung einer Solarzelle und Wafer
US20100258174A1 (en) * 2009-04-14 2010-10-14 Michael Ghebrebrhan Global optimization of thin film photovoltaic cell front coatings
KR101665722B1 (ko) * 2010-09-27 2016-10-24 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9379269B2 (en) 2012-02-29 2016-06-28 Bakersun Bifacial crystalline silicon solar panel with reflector
CN107104161A (zh) * 2012-02-29 2017-08-29 贝克阳光公司 具有反射器的双面晶体硅太阳能板
US20150339141A1 (en) * 2014-05-20 2015-11-26 International Business Machines Corporation Memory management for virtual machines
KR101657814B1 (ko) * 2014-12-23 2016-09-19 주식회사 엘지실트론 반도체 기판 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3810057A1 (de) * 1988-03-25 1989-10-05 Philips Patentverwaltung Verfahren zur messung der exzentrizitaet eines in einem zylindrischen steckerstift eingebetteten lichtwellenleiters
DE19524459A1 (de) * 1995-07-07 1997-01-09 Forschungszentrum Juelich Gmbh Solarzelle, insbesondere Konzentrator-Solarzelle oder Eine-Sonne-Solarzelle auf Siliziumbasis mit deponierten amorphen Silizium, Silizium-Germanium und/oder anderen Siliziumlegierungs-Schichten
EP1519422B1 (fr) * 2003-09-24 2018-05-16 Panasonic Intellectual Property Management Co., Ltd. Cellule solaire et sa méthode de fabrication
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US8916768B2 (en) * 2005-04-14 2014-12-23 Rec Solar Pte. Ltd. Surface passivation of silicon based wafers
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2008107156A2 *

Also Published As

Publication number Publication date
WO2008107156A3 (fr) 2009-10-29
IL200696A0 (en) 2010-05-17
KR20090129422A (ko) 2009-12-16
JP2010520631A (ja) 2010-06-10
CN101730940A (zh) 2010-06-09
AU2008224121A1 (en) 2008-09-12
WO2008107156A2 (fr) 2008-09-12
DE102007012268A1 (de) 2008-09-11
CA2679685A1 (fr) 2008-09-12
US20100018580A1 (en) 2010-01-28
MX2009009665A (es) 2010-06-18
TW200901484A (en) 2009-01-01

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