DE102007023878A1 - Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips - Google Patents

Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips Download PDF

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Publication number
DE102007023878A1
DE102007023878A1 DE102007023878A DE102007023878A DE102007023878A1 DE 102007023878 A1 DE102007023878 A1 DE 102007023878A1 DE 102007023878 A DE102007023878 A DE 102007023878A DE 102007023878 A DE102007023878 A DE 102007023878A DE 102007023878 A1 DE102007023878 A1 DE 102007023878A1
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DE
Germany
Prior art keywords
intermediate layer
semiconductor chip
layer
material component
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102007023878A
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German (de)
English (en)
Inventor
Bernd Dr. Mayer
Wolfgang Dr. Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102007023878A priority Critical patent/DE102007023878A1/de
Priority to EP08009304.0A priority patent/EP1995836B1/de
Priority to JP2008132744A priority patent/JP2008294444A/ja
Priority to US12/154,552 priority patent/US8093579B2/en
Publication of DE102007023878A1 publication Critical patent/DE102007023878A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE102007023878A 2007-05-23 2007-05-23 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips Withdrawn DE102007023878A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102007023878A DE102007023878A1 (de) 2007-05-23 2007-05-23 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
EP08009304.0A EP1995836B1 (de) 2007-05-23 2008-05-20 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
JP2008132744A JP2008294444A (ja) 2007-05-23 2008-05-21 半導体チップおよび半導体チップの製造方法
US12/154,552 US8093579B2 (en) 2007-05-23 2008-05-23 Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007023878A DE102007023878A1 (de) 2007-05-23 2007-05-23 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips

Publications (1)

Publication Number Publication Date
DE102007023878A1 true DE102007023878A1 (de) 2008-11-27

Family

ID=39577752

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007023878A Withdrawn DE102007023878A1 (de) 2007-05-23 2007-05-23 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips

Country Status (4)

Country Link
US (1) US8093579B2 (https=)
EP (1) EP1995836B1 (https=)
JP (1) JP2008294444A (https=)
DE (1) DE102007023878A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010014667A1 (de) * 2010-04-12 2011-10-13 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit Stromaufweitungsschicht

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192816A (ja) * 2010-03-15 2011-09-29 Panasonic Corp 半導体発光素子
US9130107B2 (en) * 2011-08-31 2015-09-08 Epistar Corporation Light emitting device
JP6271934B2 (ja) 2012-11-02 2018-01-31 キヤノン株式会社 窒化物半導体面発光レーザ及びその製造方法
KR102376468B1 (ko) * 2014-12-23 2022-03-21 엘지이노텍 주식회사 적색 발광소자 및 조명장치
JP6487236B2 (ja) * 2015-02-18 2019-03-20 日本オクラロ株式会社 半導体光素子、及びその製造方法
EP3073538B1 (en) 2015-03-25 2020-07-01 LG Innotek Co., Ltd. Red light emitting device and lighting system
US11228160B2 (en) * 2018-11-15 2022-01-18 Sharp Kabushiki Kaisha AlGaInPAs-based semiconductor laser device and method for producing same
JP7551564B2 (ja) * 2021-04-21 2024-09-17 浜松ホトニクス株式会社 面発光レーザ素子

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device
US5274656A (en) * 1991-06-12 1993-12-28 Sumitomo Electric Industries, Ltd. Semiconductor laser
US5479427A (en) * 1993-02-15 1995-12-26 Sumitomo Electric Industries, Ltd. Semiconductor laser and method of manufacturing the same
US5619519A (en) 1988-09-29 1997-04-08 Sanyo Electric Co. Ltd. Semiconductor laser device
US5714014A (en) * 1994-09-12 1998-02-03 Showa Denko K.K. Semiconductor heterojunction material

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0485981A (ja) * 1990-07-27 1992-03-18 Victor Co Of Japan Ltd 半導体レーザ装置
JP2911260B2 (ja) * 1991-06-20 1999-06-23 三洋電機株式会社 半導体レーザの製造方法
JP3053955B2 (ja) * 1992-04-02 2000-06-19 シャープ株式会社 ＡｌＧａＡｓＰ半導体レーザ装置
JP2783947B2 (ja) * 1992-08-25 1998-08-06 沖電気工業株式会社 半導体レーザ
US6181721B1 (en) 1996-05-20 2001-01-30 Sdl, Inc. Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam
US6618413B2 (en) * 2001-12-21 2003-09-09 Xerox Corporation Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure
JP2005353654A (ja) * 2004-06-08 2005-12-22 Mitsubishi Electric Corp 半導体レーザ素子およびその製造方法
JP2006128405A (ja) 2004-10-28 2006-05-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2006344689A (ja) * 2005-06-07 2006-12-21 Rohm Co Ltd 半導体素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5619519A (en) 1988-09-29 1997-04-08 Sanyo Electric Co. Ltd. Semiconductor laser device
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device
US5274656A (en) * 1991-06-12 1993-12-28 Sumitomo Electric Industries, Ltd. Semiconductor laser
US5479427A (en) * 1993-02-15 1995-12-26 Sumitomo Electric Industries, Ltd. Semiconductor laser and method of manufacturing the same
US5714014A (en) * 1994-09-12 1998-02-03 Showa Denko K.K. Semiconductor heterojunction material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010014667A1 (de) * 2010-04-12 2011-10-13 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit Stromaufweitungsschicht
US9853188B2 (en) 2010-04-12 2017-12-26 Osram Opto Semiconductors Gmbh Light-emitting diode chip with current spreading layer

Also Published As

Publication number Publication date
EP1995836B1 (de) 2013-09-04
JP2008294444A (ja) 2008-12-04
EP1995836A1 (de) 2008-11-26
US20090010290A1 (en) 2009-01-08
US8093579B2 (en) 2012-01-10

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Effective date: 20140524