DE10196506T1 - Dünnfilmstrukturkörper und Herstellungsverfahren dafür, sowie Beschleunigungssensor und Herstellungsverfahren dafür - Google Patents

Dünnfilmstrukturkörper und Herstellungsverfahren dafür, sowie Beschleunigungssensor und Herstellungsverfahren dafür

Info

Publication number
DE10196506T1
DE10196506T1 DE10196506T DE10196506T DE10196506T1 DE 10196506 T1 DE10196506 T1 DE 10196506T1 DE 10196506 T DE10196506 T DE 10196506T DE 10196506 T DE10196506 T DE 10196506T DE 10196506 T1 DE10196506 T1 DE 10196506T1
Authority
DE
Germany
Prior art keywords
manufacturing
method therefor
thin film
acceleration sensor
structural body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10196506T
Other languages
English (en)
Other versions
DE10196506B3 (de
Inventor
Kiyoshi Ishibashi
Makio Horikawa
Mika Okumura
Masaaki Aoto
Daisaku Yoshida
Hirofumi Takakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10196506T1 publication Critical patent/DE10196506T1/de
Application granted granted Critical
Publication of DE10196506B3 publication Critical patent/DE10196506B3/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0164—Controlling internal stress of deposited layers by doping the layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0169—Controlling internal stress of deposited layers by post-annealing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
DE10196506.0T 2001-06-13 2001-06-13 Herstellungsverfahren für einen Dünnfilmstrukturkörper Expired - Fee Related DE10196506B3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/004979 WO2002103808A1 (fr) 2001-06-13 2001-06-13 Structure de films minces et son procede de fabrication et accelerometre et son procede de fabrication

Publications (2)

Publication Number Publication Date
DE10196506T1 true DE10196506T1 (de) 2003-07-31
DE10196506B3 DE10196506B3 (de) 2014-09-04

Family

ID=11737425

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10196506.0T Expired - Fee Related DE10196506B3 (de) 2001-06-13 2001-06-13 Herstellungsverfahren für einen Dünnfilmstrukturkörper

Country Status (7)

Country Link
US (1) US7371600B2 (de)
JP (1) JP4476549B2 (de)
KR (1) KR100555616B1 (de)
CN (1) CN1246911C (de)
DE (1) DE10196506B3 (de)
TW (1) TW523787B (de)
WO (1) WO2002103808A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071017B2 (en) 2003-08-01 2006-07-04 Yamaha Corporation Micro structure with interlock configuration
US7749792B2 (en) * 2004-06-02 2010-07-06 Carnegie Mellon University Self-assembling MEMS devices having thermal actuation
US7253071B2 (en) * 2004-06-02 2007-08-07 Taiwan Semiconductor Manufacturing Company Methods for enhancing the formation of nickel mono-silicide by reducing the formation of nickel di-silicide
JP4929753B2 (ja) * 2006-02-22 2012-05-09 オムロン株式会社 薄膜構造体の形成方法並びに薄膜構造体、振動センサ、圧力センサ及び加速度センサ
JP5446107B2 (ja) * 2008-03-17 2014-03-19 三菱電機株式会社 素子ウェハおよび素子ウェハの製造方法
JP2010237196A (ja) * 2009-03-12 2010-10-21 Seiko Epson Corp Ｍｅｍｓセンサー、ｍｅｍｓセンサーの製造方法、および電子機器
JP2012252138A (ja) * 2011-06-02 2012-12-20 Japan Display East Co Ltd 表示装置および表示装置の製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54108582A (en) 1978-02-15 1979-08-25 Toshiba Corp Manufacture of silicon type field effect transistor
US5620931A (en) * 1990-08-17 1997-04-15 Analog Devices, Inc. Methods for fabricating monolithic device containing circuitry and suspended microstructure
KR970009976B1 (ko) * 1991-08-26 1997-06-19 아메리칸 텔리폰 앤드 텔레그라프 캄파니 증착된 반도체상에 형성된 개선된 유전체
US6199874B1 (en) * 1993-05-26 2001-03-13 Cornell Research Foundation Inc. Microelectromechanical accelerometer for automotive applications
US5476819A (en) * 1993-07-26 1995-12-19 Litton Systems, Inc. Substrate anchor for undercut silicon on insulator microstructures
US5492843A (en) * 1993-07-31 1996-02-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device and method of processing substrate
DE4445177C5 (de) 1994-11-22 2015-09-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung mikromechanischer Bauelemente mit freistehenden Mikrostrukturen
US5550009A (en) * 1995-04-17 1996-08-27 Eastman Kodak Company Stabilized peroxide bleaching solutions and their use for processing of photographic elements
US5922212A (en) * 1995-06-08 1999-07-13 Nippondenso Co., Ltd Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body
US5550090A (en) 1995-09-05 1996-08-27 Motorola Inc. Method for fabricating a monolithic semiconductor device with integrated surface micromachined structures
US5814834A (en) * 1995-12-04 1998-09-29 Semiconductor Energy Laboratory Co. Thin film semiconductor device
JP3893636B2 (ja) * 1996-03-27 2007-03-14 日産自動車株式会社 微小機械の製造方法
US5834071A (en) 1997-02-11 1998-11-10 Industrial Technology Research Institute Method for forming a thin film transistor
JP4000615B2 (ja) * 1997-03-21 2007-10-31 日産自動車株式会社 微小機械の製造方法
US6167757B1 (en) * 1997-09-08 2001-01-02 The Regents Of The University Of Michigan Single-side microelectromechanical capacitive accelerometer and method of making same
JP4003326B2 (ja) * 1998-02-12 2007-11-07 株式会社デンソー 半導体力学量センサおよびその製造方法
JP4193232B2 (ja) * 1998-07-22 2008-12-10 株式会社デンソー 力学量センサ
JP2000133818A (ja) * 1998-10-29 2000-05-12 Hitachi Ltd 圧力センサ及びその製造方法
US6228275B1 (en) * 1998-12-10 2001-05-08 Motorola, Inc. Method of manufacturing a sensor
JP4511739B2 (ja) 1999-01-15 2010-07-28 ザ リージェンツ オブ ザ ユニヴァーシティ オブ カリフォルニア マイクロ電子機械システムを形成するための多結晶シリコンゲルマニウム膜

Also Published As

Publication number Publication date
WO2002103808A1 (fr) 2002-12-27
CN1246911C (zh) 2006-03-22
TW523787B (en) 2003-03-11
JP4476549B2 (ja) 2010-06-09
KR20030027951A (ko) 2003-04-07
US7371600B2 (en) 2008-05-13
DE10196506B3 (de) 2014-09-04
JPWO2002103808A1 (ja) 2004-10-07
CN1446379A (zh) 2003-10-01
KR100555616B1 (ko) 2006-03-03
US20030180981A1 (en) 2003-09-25

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