DE10083868D2 - Halbleiter-Drucksensor und Meßanordnung - Google Patents

Halbleiter-Drucksensor und Meßanordnung

Info

Publication number
DE10083868D2
DE10083868D2 DE10083868T DE10083868T DE10083868D2 DE 10083868 D2 DE10083868 D2 DE 10083868D2 DE 10083868 T DE10083868 T DE 10083868T DE 10083868 T DE10083868 T DE 10083868T DE 10083868 D2 DE10083868 D2 DE 10083868D2
Authority
DE
Germany
Prior art keywords
pressure sensor
measuring arrangement
semiconductor pressure
semiconductor
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10083868T
Other languages
English (en)
Inventor
Joerg Muchow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE10083868T priority Critical patent/DE10083868D2/de
Application granted granted Critical
Publication of DE10083868D2 publication Critical patent/DE10083868D2/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2268—Arrangements for correcting or for compensating unwanted effects
    • G01L1/2275—Arrangements for correcting or for compensating unwanted effects for non linearity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
DE10083868T 1999-11-30 2000-11-24 Halbleiter-Drucksensor und Meßanordnung Ceased DE10083868D2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10083868T DE10083868D2 (de) 1999-11-30 2000-11-24 Halbleiter-Drucksensor und Meßanordnung

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE1999157556 DE19957556A1 (de) 1999-11-30 1999-11-30 Halbleiter-Drucksensor und Meßanordnung
DE10083868T DE10083868D2 (de) 1999-11-30 2000-11-24 Halbleiter-Drucksensor und Meßanordnung
PCT/DE2000/004167 WO2001040751A1 (de) 1999-11-30 2000-11-24 Halbleiter-drucksensor und messanordnung

Publications (1)

Publication Number Publication Date
DE10083868D2 true DE10083868D2 (de) 2002-02-28

Family

ID=7930834

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1999157556 Withdrawn DE19957556A1 (de) 1999-11-30 1999-11-30 Halbleiter-Drucksensor und Meßanordnung
DE10083868T Ceased DE10083868D2 (de) 1999-11-30 2000-11-24 Halbleiter-Drucksensor und Meßanordnung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE1999157556 Withdrawn DE19957556A1 (de) 1999-11-30 1999-11-30 Halbleiter-Drucksensor und Meßanordnung

Country Status (2)

Country Link
DE (2) DE19957556A1 (de)
WO (1) WO2001040751A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10231727A1 (de) * 2002-07-13 2004-01-22 Robert Bosch Gmbh Mikromechanische Drucksensorvorrichtung und entsprechende Messanordnung
DE10260105A1 (de) 2002-12-19 2004-07-01 Robert Bosch Gmbh Drucksensor
US7055392B2 (en) 2003-07-04 2006-06-06 Robert Bosch Gmbh Micromechanical pressure sensor
DE102004006199B4 (de) * 2004-02-09 2015-09-03 Robert Bosch Gmbh Mikromechanischer Drucksensor für hohe Drücke
DE102005046058A1 (de) 2005-09-27 2007-03-29 Robert Bosch Gmbh Verfahren zur Herstellung einer eine monolithisch integrierte Schaltung unfassende Sensoranordnung und Sensoranordnung
US7793550B2 (en) 2008-08-25 2010-09-14 Infineon Technologies Ag Sensor device including two sensors embedded in a mold material
DE102010043364B4 (de) 2010-11-04 2019-11-14 Robert Bosch Gmbh Piezoresistive Druckmessanordnung mit einer vorgegebenen Kennlinie und Verwendung einer derartigen Druckmessanordnung
EP2769191B1 (de) * 2011-10-21 2020-03-04 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Sic-hochtemperatur-druckwandler
DE102012203850A1 (de) 2012-03-13 2013-09-19 Robert Bosch Gmbh Druckmessanordnung
GB2521163A (en) 2013-12-11 2015-06-17 Melexis Technologies Nv Semiconductor pressure sensor
US10317297B2 (en) 2013-12-11 2019-06-11 Melexis Technologies Nv Semiconductor pressure sensor
DE102015202423A1 (de) * 2015-02-11 2016-01-14 Robert Bosch Gmbh Bauteil mit einer Wheatstone´schen Messbrücke für eine MEMS-Sensorfunktion
EP3056865B1 (de) * 2015-02-13 2019-09-04 Sensirion AG Sensorenanordnung
DE102017214846A1 (de) 2017-08-24 2019-02-28 Infineon Technologies Ag Gehäustes MEMS Bauteil mit Störgrößenkompensation
CN109060201A (zh) * 2018-08-25 2018-12-21 成都凯天电子股份有限公司 耐高温硅压阻压力敏感元件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3230763A (en) * 1962-12-27 1966-01-25 Honeywell Inc Semiconductor pressure diaphragm
US3341794A (en) * 1965-07-26 1967-09-12 Statham Instrument Inc Transducers with substantially linear response characteristics
US3772628A (en) * 1972-05-30 1973-11-13 Gen Electric Integral silicon diaphragms for low pressure measurements
DE2809549C2 (de) * 1977-03-07 1985-03-14 Hitachi, Ltd., Tokio/Tokyo Verfahren zur Herstellung eines Halbleiter-Druckmeßfühlers und Halbleiter-Druckmeßfühler
JPS5653404A (en) * 1979-10-08 1981-05-13 Hitachi Ltd Nonlinear correction circuit
DE2940955A1 (de) * 1979-10-09 1981-04-23 Gosudarstvennyj naučno-issledovatel'skij institut teploenergetičeskogo priborostroenija, Moskva Halbleiter-dehnungswandler
CA1186163A (en) * 1982-01-04 1985-04-30 James B. Starr Semiconductor pressure transducer
ATE107770T1 (de) * 1989-12-06 1994-07-15 Siemens Ag Albis Kraftwandler.
US6308577B1 (en) * 1996-09-30 2001-10-30 Motorola, Inc. Circuit and method of compensating for membrane stress in a sensor
DE19701055B4 (de) * 1997-01-15 2016-04-28 Robert Bosch Gmbh Halbleiter-Drucksensor

Also Published As

Publication number Publication date
DE19957556A1 (de) 2001-05-31
WO2001040751A1 (de) 2001-06-07

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Legal Events

Date Code Title Description
8131 Rejection