DE04783167T1 - Doped Alloys for Electrical Connections, Methods of Manufacture, and Uses Therefor - Google Patents

Doped Alloys for Electrical Connections, Methods of Manufacture, and Uses Therefor Download PDF

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DE04783167T1
DE04783167T1 DE04783167T DE04783167T DE04783167T1 DE 04783167 T1 DE04783167 T1 DE 04783167T1 DE 04783167 T DE04783167 T DE 04783167T DE 04783167 T DE04783167 T DE 04783167T DE 04783167 T1 DE04783167 T1 DE 04783167T1
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copper
phosphorus
ppm
dopant
amount
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Nancy Honeywell International Inc. Morristown DEAN
James Honeywell International Inc. Morristown FLINT
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Honeywell International Inc
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Honeywell International Inc
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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Abstract

Dotiertes Lötmaterial, umfassend:
mindestens ein Lötmaterial;
mindestens ein Dotiermittel auf Phosphorbasis; und
mindestens ein Dotiermittel auf Kupferbasis.Doped solder material comprising:
at least one solder material;
at least one phosphorus-based dopant; and
at least one copper-based dopant.

Claims (31)

Dotiertes Lötmaterial, umfassend: mindestens ein Lötmaterial; mindestens ein Dotiermittel auf Phosphorbasis; und mindestens ein Dotiermittel auf Kupferbasis.Doped soldering material, full: at least one solder material; at least a phosphorus-based dopant; and at least one dopant based on copper. Dotiertes Lötmaterial nach Anspruch 1, wobei das mindestens eine Lötmaterial Indium, Blei, Silber, Kupfer, Aluminium, Zinn, Wismut, Gallium und Legierungen davon, silberbeschichtetes Kupfer, silberbeschichtetes Aluminium oder eine Kombination davon umfasst.Doped soldering material according to claim 1, wherein the at least one solder material is indium, lead, silver, copper, Aluminum, tin, bismuth, gallium and alloys thereof, silver-coated Copper, silver-coated aluminum or a combination thereof. Dotiertes Lötmaterial nach Anspruch 2, wobei das mindestens eine Lötmaterial Blei-Zinn-Legierungen, Indium-Zinn(InSn)-Verbindungen und -Legierungen, Indium-Silber(InAg)-Verbindungen und -Legierungen, Verbindungen auf Indiumbasis, Zinn-Silber-Kupfer-Verbindungen und -Legierungen (SnAgCu), Zinn-Wismut-Verbindungen und -Legierungen (SnBi), Verbindungen und Legierungen auf Aluminiumbasis und Kombinationen davon umfasst.Doped soldering material according to claim 2, wherein the at least one solder material comprises lead-tin alloys, Indium-tin (InSn) compounds and alloys, indium-silver (InAg) compounds and alloys, indium-based compounds, tin-silver-copper compounds and Alloys (SnAgCu), Tin-bismuth Compounds and Alloys (SnBi), Aluminum-based compounds and alloys and combinations including thereof. Dotiertes Lötmaterial nach Anspruch 3, wobei die Blei-Zinn-Legierung eine eutektische Legierung aus Blei (37%) und Zinn (63%) umfasst.Doped soldering material according to claim 3, wherein the lead-tin alloy is an eutectic Alloy of lead (37%) and tin (63%). Dotiertes Lötmaterial nach Anspruch 1, wobei der mindestens eine Dotiermittel auf Phosphorbasis in einer Menge von weniger als etwa 100 ppm Phosphor vorhanden ist.Doped soldering material according to claim 1, wherein said at least one phosphorus-based dopant is in a Amount of less than about 100 ppm of phosphorus is present. Dotiertes Lötmaterial nach Anspruch 5, wobei das mindestens eine Dotiermittel auf Phosphorbasis in einer Menge von weniger als etwa 70 ppm Phosphor vorhanden ist.Doped soldering material according to claim 5, wherein said at least one phosphorus-based dopant is in an amount less than about 70 ppm phosphorus is present. Dotiertes Lötmaterial nach Anspruch 6, wobei das mindestens eine Dotiermittel auf Phosphorbasis in einer Menge von weniger als etwa 60 ppm Phosphor vorhanden ist.Doped soldering material according to claim 6, wherein said at least one phosphorus-based dopant is in an amount of less than about 60 ppm phosphorus is present. Dotiertes Lötmaterial nach Anspruch 1, wobei das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von weniger als etwa 800 ppm Kupfer vorhanden ist.Doped soldering material according to claim 1, wherein said at least one copper-based dopant is present in an amount of less than about 800 ppm copper. Dotiertes Lötmaterial nach Anspruch 8, wobei das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von weniger als etwa 600 ppm Kupfer vorhanden ist.Doped soldering material according to claim 8, wherein said at least one copper-based dopant is present in an amount of less than about 600 ppm copper. Dotiertes Lötmaterial nach Anspruch 9, wobei das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von weniger als etwa 500 ppm Kupfer vorhanden ist.Doped soldering material according to claim 9, wherein said at least one copper-based dopant is present in an amount of less than about 500 ppm copper. Dotiertes Lötmaterial nach Anspruch 1, wobei das mindestens eine Dotiermittel auf Phosphorbasis und das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von etwa 10 bis 100 ppm für Phosphor und etwa 25 bis 800 ppm für Kupfer vorhanden sind.Doped soldering material according to claim 1, wherein said at least one phosphorus-based dopant and the at least one copper-based dopant in an amount from about 10 to 100 ppm for Phosphorus and about 25 to 800 ppm are present for copper. Dotiertes Lötmaterial nach Anspruch 1, wobei das mindestens eine Dotiermittel auf Phosphorbasis und das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von etwa 10 bis 70 ppm für Phosphor und etwa 25 bis 500 ppm für Kupfer vorhanden sind.Doped soldering material according to claim 1, wherein said at least one phosphorus-based dopant and the at least one copper-based dopant in an amount from about 10 to 70 ppm for Phosphorus and about 25 to 500 ppm are present for copper. Dotiertes Lötmaterial nach Anspruch 1, wobei das mindestens eine Dotiermittel auf Phosphorbasis und das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von etwa 20 bis 60 ppm für Phosphor und etwa 40 bis 600 ppm für Kupfer vorhanden sind.Doped soldering material according to claim 1, wherein said at least one phosphorus-based dopant and the at least one copper-based dopant in an amount from about 20 to 60 ppm for Phosphorus and about 40 to 600 ppm are present for copper. Dotiertes Lötmaterial nach Anspruch 1, wobei das mindestens eine Dotiermittel auf Phosphorbasis und das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von etwa 30 bis 60 ppm für Phosphor und etwa 300 bis 500 ppm für Kupfer vorhanden sind.Doped soldering material according to claim 1, wherein said at least one phosphorus-based dopant and the at least one copper-based dopant in an amount from about 30 to 60 ppm for Phosphorus and about 300 to 500 ppm are present for copper. Verfahren zur Bildung eines dotierten Lötmaterials, umfassend: Bereitstellen mindestens eines Lötmaterials; Bereitstellen mindestens eines Dotierungsmittels auf Phosphorbasis; Bereitstellen mindestens eines Dotierungsmittels auf Kupferbasis, und Mischen des mindestens einen Lötmaterials, des mindestens einen Dotierungsmittels auf Phosphorbasis und des mindestens einen Dotierungsmittels auf Kupferbasis, um ein dotiertes Lötmaterial zu bilden.Method for forming a doped soldering material, full: Providing at least one solder material; Provide at least one phosphorus-based dopant; Provide at least one copper-based dopant, and Mix the at least one solder material, the at least one phosphorus-based dopant and the at least one copper-based dopant, around a doped one Solders to build. Verfahren nach Anspruch 15, wobei das mindestens eine Lötmaterial Indium, Blei, Silber, Kupfer, Aluminium, Zinn, Wismut, Gallium und Legierungen davon, silberbeschichtetes Kupfer, silberbeschichtetes Aluminium oder eine Kombination davon umfasst.The method of claim 15, wherein the at least a soldering material Indium, lead, silver, copper, aluminum, tin, bismuth, gallium and Alloys thereof, silver-coated copper, silver-coated Aluminum or a combination thereof. Verfahren nach Anspruch 16, wobei das mindestens eine Lötmaterial Blei-Zinn-Legierungen, Indium-Zinn(InSn)-Verbindungen und -Legierungen, Indium- Silber(InAg)-Verbindungen und -Legierungen, Verbindungen auf Indiumbasis, Zinn-Silber-Kupfer-Verbindungen und -Legierungen (SnAgCu), Zinn-Wismut-Verbindungen und -Legierungen (SnBi), Verbindungen und Legierungen auf Aluminiumbasis und Kombinationen davon umfasst.The method of claim 16, wherein the at least a soldering material Lead-tin alloys, indium-tin (InSn) compounds and alloys, indium-silver (InAg) compounds and alloys, indium-based compounds, tin-silver-copper compounds and alloys (SnAgCu), tin bismuth compounds and alloys (SnBi), Aluminum-based compounds and alloys and combinations including thereof. Verfahren nach Anspruch 17, wobei die Blei-Zinn-Legierung eine eutektische Legierung aus Blei (37%) und Zinn (63%) umfasst.The method of claim 17, wherein the lead-tin alloy is an eutectic Alloy of lead (37%) and tin (63%). Verfahren nach Anspruch 15, wobei das mindestens eine Dotiermittel auf Phosphorbasis in einer Menge von weniger als etwa 100 ppm Phosphor vorhanden ist.The method of claim 15, wherein said at least one phosphorus-based dopant is in a Amount of less than about 100 ppm of phosphorus is present. Verfahren nach Anspruch 19, wobei das mindestens eine Dotiermittel auf Phosphorbasis in einer Menge von weniger als etwa 70 ppm Phosphor vorhanden ist.The method of claim 19, wherein the at least a phosphorus-based dopant in an amount of less than about 70 ppm of phosphorus is present. Verfahren nach Anspruch 20, wobei das mindestens eine Dotiermittel auf Phosphorbasis in einer Menge von weniger als etwa 60 ppm Phosphor vorhanden ist.The method of claim 20, wherein the at least a phosphorus-based dopant in an amount of less than about 60 ppm of phosphorus is present. Verfahren nach Anspruch 15, wobei das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von weniger als etwa 800 ppm Kupfer vorhanden ist.The method of claim 15, wherein the at least a copper-based dopant in an amount of less than about 800 ppm of copper is present. Verfahren nach Anspruch 22, wobei das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von weniger als etwa 600 ppm Kupfer vorhanden ist.The method of claim 22, wherein the at least a copper-based dopant in an amount of less than about 600 ppm of copper is present. Verfahren nach Anspruch 23, wobei das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von weniger als etwa 500 ppm Kupfer vorhanden ist.The method of claim 23, wherein the at least a copper-based dopant in an amount of less than about 500 ppm of copper is present. Verfahren nach Anspruch 15, wobei das mindestens eine Dotiermittel auf Phosphorbasis und das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von etwa 10 bis 100 ppm für Phosphor und etwa 25 bis 800 ppm für Kupfer vorhanden sind.The method of claim 15, wherein the at least a phosphorus-based dopant and the at least one dopant based on copper in an amount of about 10 to 100 ppm for phosphorus and about 25 to 800 ppm for Copper are present. Verfahren nach Anspruch 15, wobei das mindestens eine Dotiermittel auf Phosphorbasis und das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von etwa 10 bis 70 ppm für Phosphor und etwa 25 bis 500 ppm für Kupfer vorhanden sind.The method of claim 15, wherein the at least a phosphorus-based dopant and the at least one dopant based on copper in an amount of about 10 to 70 ppm for phosphorus and about 25 to 500 ppm for Copper are present. Verfahren nach Anspruch 15, wobei das mindestens eine Dotiermittel auf Phosphorbasis und das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von etwa 20 bis 60 ppm für Phosphor und etwa 40 bis 600 ppm für Kupfer vorhanden sind.The method of claim 15, wherein the at least a phosphorus-based dopant and the at least one dopant based on copper in an amount of about 20 to 60 ppm for phosphorus and about 40 to 600 ppm for Copper are present. Verfahren nach Anspruch 15, wobei das mindestens eine Dotiermittel auf Phosphorbasis und das mindestens eine Dotiermittel auf Kupferbasis in einer Menge von etwa 30 bis 60 ppm für Phosphor und etwa 300 bis 500 ppm für Kupfer vorhanden sind.The method of claim 15, wherein the at least a phosphorus-based dopant and the at least one dopant based on copper in an amount of about 30 to 60 ppm for phosphorus and about 300 to 500 ppm for Copper are present. Schichtmaterial, umfassend: eine Fläche oder ein Substrat; eine elektrische Verbindung; ein Lötmaterial, das mindestens ein Dotiermittel auf Phosphorbasis und mindestens ein Dotiermittel auf Kupferbasis umfasst; und einen Halbleiterchip oder -paket.Layered material comprising: an area or a substrate; an electrical connection; a soldering material, the at least one phosphorus-based dopant and at least a copper-based dopant; and a semiconductor chip or package. Elektrischer Bestandteil, umfassend das dotierte Lötmaterial von Anspruch 1.Electrical component, comprising the doped Solders of claim 1. Halbleiterbestandteil, umfassend das dotierte Lötmaterial von Anspruch 1.Semiconductor component comprising the doped solder material of claim 1.
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