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US4305760A
(en)
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Polysilicon-to-substrate contact processing
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US5030590A
(en)
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Process for etching polysilicon layer in formation of integrated circuit structure
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US4227975A
(en)
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Selective plasma etching of dielectric masks in the presence of native oxides of group III-V compound semiconductors
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US4936328A
(en)
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Wafer transposing device
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US5534460A
(en)
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Optimized contact plug process
|
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DE69232582T2
(de)
|
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Selektives Elektrochemischätzen
|
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US4542579A
(en)
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Method for forming aluminum oxide dielectric isolation in integrated circuits
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US4026741A
(en)
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Technique for preparation of stoichiometric III-V compound semiconductor surfaces
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US3882000A
(en)
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Formation of composite oxides on III-V semiconductors
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US4363696A
(en)
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Short circuit prevention in the manufacture of semiconductor devices
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US5705027A
(en)
|
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Method of removing etching residues
|
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US5188988A
(en)
|
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Passivation oxide conversion wherein an anodically grown oxide is converted to the sulfide
|
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JPH0434817B2
(xx)
|
|
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JPH04157427A
(ja)
|
|
陽極酸化装置
|
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JPS6134947A
(ja)
|
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半導体装置の製造方法
|
|
JPS6334947A
(ja)
|
|
ウエ−ハ搬送用治具
|
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JPS6159674B2
(xx)
|
|
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DD47530A
(xx)
|
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