DD290078A5 - Inp/gainasp laser-diode mit vergrabener aktivschicht, mit doppelkanaltraeger und mit doppeltem, eingebauten, sperrenden heterostruktur enthaltenden p-n uebergang, und deren herstellung unter anwendung der einstufigen fluessigkeitsepitaxialen methode - Google Patents
Inp/gainasp laser-diode mit vergrabener aktivschicht, mit doppelkanaltraeger und mit doppeltem, eingebauten, sperrenden heterostruktur enthaltenden p-n uebergang, und deren herstellung unter anwendung der einstufigen fluessigkeitsepitaxialen methode Download PDFInfo
- Publication number
- DD290078A5 DD290078A5 DD89335747A DD33574789A DD290078A5 DD 290078 A5 DD290078 A5 DD 290078A5 DD 89335747 A DD89335747 A DD 89335747A DD 33574789 A DD33574789 A DD 33574789A DD 290078 A5 DD290078 A5 DD 290078A5
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- layer
- inp
- type
- gainasp
- advantageously
- Prior art date
Links
- 238000000034 method Methods 0.000 title description 6
- 238000002360 preparation method Methods 0.000 title description 2
- 230000007704 transition Effects 0.000 title description 2
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 3
- 230000000903 blocking effect Effects 0.000 claims abstract 4
- 238000005530 etching Methods 0.000 claims description 13
- 238000000407 epitaxy Methods 0.000 claims description 11
- 239000013589 supplement Substances 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 5
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- 229910052737 gold Inorganic materials 0.000 claims description 3
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- 239000002966 varnish Substances 0.000 claims description 3
- MNZMECMQTYGSOI-UHFFFAOYSA-N acetic acid;hydron;bromide Chemical compound Br.CC(O)=O MNZMECMQTYGSOI-UHFFFAOYSA-N 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 229910017401 Au—Ge Inorganic materials 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract description 3
- 230000009977 dual effect Effects 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 11
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010000210 abortion Diseases 0.000 description 1
- 231100000176 abortion Toxicity 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
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- 230000005496 eutectics Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
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- 238000010297 mechanical methods and process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
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- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- -1 sulfuric acid peroxide Chemical class 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| HU886432A HU206565B (en) | 1988-12-15 | 1988-12-15 | Inp/gainasp laser diode of burried active layer, having built-in blocking layer, of double heterostructure and method for making said laser diode by one-stage liquid epitaxial procedure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD290078A5 true DD290078A5 (de) | 1991-05-16 |
Family
ID=10971624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD89335747A DD290078A5 (de) | 1988-12-15 | 1989-12-15 | Inp/gainasp laser-diode mit vergrabener aktivschicht, mit doppelkanaltraeger und mit doppeltem, eingebauten, sperrenden heterostruktur enthaltenden p-n uebergang, und deren herstellung unter anwendung der einstufigen fluessigkeitsepitaxialen methode |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0373637A3 (fr) |
| JP (1) | JPH03136289A (fr) |
| KR (1) | KR940007604B1 (fr) |
| CA (1) | CA2005555A1 (fr) |
| DD (1) | DD290078A5 (fr) |
| HU (1) | HU206565B (fr) |
| IL (1) | IL92701A0 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5341001A (en) * | 1992-02-13 | 1994-08-23 | Matsushita Electric Industrial Co., Ltd. | Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode |
| JPH07288361A (ja) * | 1994-04-18 | 1995-10-31 | Nec Kansai Ltd | 半導体レーザ及びその製造方法 |
| JP2699888B2 (ja) * | 1994-09-20 | 1998-01-19 | 日本電気株式会社 | 埋め込み型ｐ型基板半導体レーザ |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5864084A (ja) * | 1981-10-13 | 1983-04-16 | Nec Corp | 半導体レ−ザ |
| EP0083697B1 (fr) * | 1981-10-19 | 1987-09-09 | Nec Corporation | Laser à hétérostructure plane enterrée comportant deux gorges |
| JPS58131785A (ja) * | 1982-01-29 | 1983-08-05 | Nec Corp | 単一軸モ−ド発振半導体レ−ザ |
| JPS60137087A (ja) * | 1983-12-26 | 1985-07-20 | Toshiba Corp | 半導体レ−ザ装置 |
| JPS62268182A (ja) * | 1986-05-15 | 1987-11-20 | Canon Inc | 半導体レ−ザ装置 |
-
1988
- 1988-12-15 HU HU886432A patent/HU206565B/hu not_active IP Right Cessation
-
1989
- 1989-12-13 EP EP19890123072 patent/EP0373637A3/fr not_active Withdrawn
- 1989-12-14 CA CA002005555A patent/CA2005555A1/fr not_active Abandoned
- 1989-12-14 IL IL92701A patent/IL92701A0/xx unknown
- 1989-12-15 DD DD89335747A patent/DD290078A5/de not_active IP Right Cessation
- 1989-12-15 JP JP1324112A patent/JPH03136289A/ja active Pending
- 1989-12-15 KR KR1019890018779A patent/KR940007604B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| IL92701A0 (en) | 1990-09-17 |
| HU206565B (en) | 1992-11-30 |
| EP0373637A2 (fr) | 1990-06-20 |
| KR940007604B1 (ko) | 1994-08-20 |
| CA2005555A1 (fr) | 1990-06-15 |
| EP0373637A3 (fr) | 1990-12-27 |
| JPH03136289A (ja) | 1991-06-11 |
| HUT55924A (en) | 1991-06-28 |
| KR900011085A (ko) | 1990-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ENJ | Ceased due to non-payment of renewal fee |