DD109670A5 - - Google Patents

Info

Publication number
DD109670A5
DD109670A5 DD176548A DD17654874A DD109670A5 DD 109670 A5 DD109670 A5 DD 109670A5 DD 176548 A DD176548 A DD 176548A DD 17654874 A DD17654874 A DD 17654874A DD 109670 A5 DD109670 A5 DD 109670A5
Authority
DD
German Democratic Republic
Application number
DD176548A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DD109670A5 publication Critical patent/DD109670A5/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
DD176548A 1973-02-16 1974-02-14 DD109670A5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2307649A DE2307649B2 (de) 1973-02-16 1973-02-16 Anordnung zum Aufstäuben verschiedener Materialien auf einem Substrat

Publications (1)

Publication Number Publication Date
DD109670A5 true DD109670A5 (de) 1974-11-12

Family

ID=5872099

Family Applications (1)

Application Number Title Priority Date Filing Date
DD176548A DD109670A5 (de) 1973-02-16 1974-02-14

Country Status (8)

Country Link
US (1) US3985635A (de)
JP (1) JPS49114585A (de)
CH (1) CH564096A5 (de)
DD (1) DD109670A5 (de)
DE (1) DE2307649B2 (de)
FR (1) FR2218402B1 (de)
GB (1) GB1465745A (de)
IT (1) IT1007287B (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060471A (en) * 1975-05-19 1977-11-29 Rca Corporation Composite sputtering method
US4288306A (en) * 1978-07-08 1981-09-08 Wolfgang Kieferle Process for forming a metal or alloy layer and device for executing same
US4239611A (en) * 1979-06-11 1980-12-16 Vac-Tec Systems, Inc. Magnetron sputtering devices
WO1982002906A1 (en) * 1981-02-23 1982-09-02 Leonid Pavlovich Sablev Consumable cathode for electric-arc evaporator of metal
FR2504116A1 (fr) * 1981-04-15 1982-10-22 Commissariat Energie Atomique Procede d'obtention de couches de verres luminescents, application a la realisation de dispositifs munis de ces couches et a la realisation de photoscintillateurs.
US4362611A (en) * 1981-07-27 1982-12-07 International Business Machines Corporation Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield
DE3248121A1 (de) * 1982-12-24 1984-06-28 Leybold-Heraeus GmbH, 5000 Köln Hochleistungs-katodenanordnung fuer die erzeugung von mehrfachschichten
US4420385A (en) * 1983-04-15 1983-12-13 Gryphon Products Apparatus and process for sputter deposition of reacted thin films
US4626336A (en) * 1985-05-02 1986-12-02 Hewlett Packard Company Target for sputter depositing thin films
DE3530074A1 (de) * 1985-08-22 1987-02-26 Siemens Ag Vorrichtung zum herstellen mehrerer aufeinanderfolgender schichten durch hochleistungs-kathodenzerstaeubung
JPS6260865A (ja) * 1985-09-11 1987-03-17 Sony Corp 積層構造薄膜の作製装置
JPS6383261A (ja) * 1986-09-26 1988-04-13 Tokyo Electron Ltd スパツタリング装置
DE3710497A1 (de) * 1987-03-30 1988-10-20 Tzn Forschung & Entwicklung Verfahren und vorrichtung zur herstellung von duennen, aus mehreren elementaren komponenten bestehenden filmen
US4814056A (en) * 1987-06-23 1989-03-21 Vac-Tec Systems, Inc. Apparatus for producing graded-composition coatings
JPH0194454U (de) * 1987-12-10 1989-06-21
US4865710A (en) * 1988-03-31 1989-09-12 Wisconsin Alumni Research Foundation Magnetron with flux switching cathode and method of operation
DE69216685T2 (de) * 1991-05-31 1997-05-28 Deposition Sciences Inc Sputteranlage
GB9225270D0 (en) * 1992-12-03 1993-01-27 Gec Ferranti Defence Syst Depositing different materials on a substrate
GB2273110B (en) * 1992-12-03 1996-01-24 Gec Marconi Avionics Holdings Depositing different materials on a substrate
DE69403386T2 (de) * 1993-05-19 1997-09-18 Applied Materials Inc Vorrichtung und Verfahren zur Erhöhung der Zerstäubungsrate in einem Zerstäubungsgerät
US5772858A (en) * 1995-07-24 1998-06-30 Applied Materials, Inc. Method and apparatus for cleaning a target in a sputtering source
WO1997035044A1 (en) * 1996-03-22 1997-09-25 Materials Research Corporation Method and apparatus for rf diode sputtering
JP3249408B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
DE59702419D1 (de) * 1997-07-15 2000-11-09 Unaxis Trading Ag Truebbach Verfahren und Vorrichtung zur Sputterbeschichtung
US6168690B1 (en) * 1997-09-29 2001-01-02 Lam Research Corporation Methods and apparatus for physical vapor deposition
US6086735A (en) * 1998-06-01 2000-07-11 Praxair S.T. Technology, Inc. Contoured sputtering target
US6309516B1 (en) 1999-05-07 2001-10-30 Seagate Technology Llc Method and apparatus for metal allot sputtering
US6503380B1 (en) 2000-10-13 2003-01-07 Honeywell International Inc. Physical vapor target constructions
JP2002363745A (ja) * 2001-06-08 2002-12-18 Canon Inc スパッタによる膜の形成方法、光学部材、およびスパッタ装置
US6994775B2 (en) * 2002-07-31 2006-02-07 The Regents Of The University Of California Multilayer composites and manufacture of same
US7172681B2 (en) * 2003-02-05 2007-02-06 Bridgestone Corporation Process for producing rubber-based composite material
ATE382585T1 (de) * 2003-06-24 2008-01-15 Cardinal Cg Co Konzentrationsmodulierte beschichtungen
US8084400B2 (en) * 2005-10-11 2011-12-27 Intermolecular, Inc. Methods for discretized processing and process sequence integration of regions of a substrate
WO2006071596A1 (en) * 2004-12-27 2006-07-06 Cardinal Cg Company Oscillating shielded cylindrical target assemblies and their methods of use
US7902063B2 (en) * 2005-10-11 2011-03-08 Intermolecular, Inc. Methods for discretized formation of masking and capping layers on a substrate
US8776717B2 (en) * 2005-10-11 2014-07-15 Intermolecular, Inc. Systems for discretized processing of regions of a substrate
US20070158181A1 (en) * 2006-01-12 2007-07-12 Seagate Technology Llc Method & apparatus for cathode sputtering with uniform process gas distribution
WO2007095194A2 (en) * 2006-02-10 2007-08-23 Intermolecular, Inc. Method and apparatus for combinatorially varying materials, unit process and process sequence
US8772772B2 (en) * 2006-05-18 2014-07-08 Intermolecular, Inc. System and method for increasing productivity of combinatorial screening
US7815782B2 (en) * 2006-06-23 2010-10-19 Applied Materials, Inc. PVD target
US7867904B2 (en) * 2006-07-19 2011-01-11 Intermolecular, Inc. Method and system for isolated and discretized process sequence integration
US8011317B2 (en) * 2006-12-29 2011-09-06 Intermolecular, Inc. Advanced mixing system for integrated tool having site-isolated reactors
US9567666B2 (en) * 2009-01-12 2017-02-14 Guardian Industries Corp Apparatus and method for making sputtered films with reduced stress asymmetry
JP5662575B2 (ja) * 2011-06-30 2015-02-04 キヤノンアネルバ株式会社 成膜装置
JP5662583B2 (ja) * 2011-09-09 2015-02-04 キヤノンアネルバ株式会社 成膜装置
WO2021220839A1 (ja) * 2020-04-30 2021-11-04 東京エレクトロン株式会社 Ｐｖｄ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3324019A (en) * 1962-12-11 1967-06-06 Schjeldahl Co G T Method of sputtering sequentially from a plurality of cathodes
US3361659A (en) * 1967-08-14 1968-01-02 Ibm Process of depositing thin films by cathode sputtering using a controlled grid
DE1790178A1 (de) * 1967-10-11 1972-01-20 Varian Associates Kathoden-Zerstaeubungsvorrichtung
US3652444A (en) * 1969-10-24 1972-03-28 Ibm Continuous vacuum process apparatus

Also Published As

Publication number Publication date
US3985635A (en) 1976-10-12
IT1007287B (it) 1976-10-30
FR2218402A1 (de) 1974-09-13
FR2218402B1 (de) 1976-10-08
DE2307649B2 (de) 1980-07-31
JPS49114585A (de) 1974-11-01
GB1465745A (en) 1977-03-02
CH564096A5 (de) 1975-07-15
DE2307649A1 (de) 1974-08-29

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