CS638382A1 - Zarizeni k vysoce produktivnimu rozprasovani na principu plazmatronu - Google Patents

Zarizeni k vysoce produktivnimu rozprasovani na principu plazmatronu

Info

Publication number
CS638382A1
CS638382A1 CS826383A CS638382A CS638382A1 CS 638382 A1 CS638382 A1 CS 638382A1 CS 826383 A CS826383 A CS 826383A CS 638382 A CS638382 A CS 638382A CS 638382 A1 CS638382 A1 CS 638382A1
Authority
CS
Czechoslovakia
Prior art keywords
vysoce
rozprasovani
produktivnimu
principu
plazmatronu
Prior art date
Application number
CS826383A
Other languages
English (en)
Other versions
CS245743B1 (en
Inventor
Wolfgang Erbkamm
Johannes Hartung
Volkmar Spreitz
Klaus Goedicke
Ullrich Heisig
Gerhard Kuehn
Siegfried Schiller
Guenther Beister
Hans Christian Hecht
Original Assignee
Wolfgang Erbkamm
Johannes Hartung
Volkmar Spreitz
Klaus Goedicke
Ullrich Heisig
Gerhard Kuehn
Siegfried Schiller
Guenther Beister
Hans Christian Hecht
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wolfgang Erbkamm, Johannes Hartung, Volkmar Spreitz, Klaus Goedicke, Ullrich Heisig, Gerhard Kuehn, Siegfried Schiller, Guenther Beister, Hans Christian Hecht filed Critical Wolfgang Erbkamm
Publication of CS638382A1 publication Critical patent/CS638382A1/cs
Publication of CS245743B1 publication Critical patent/CS245743B1/cs

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CS826383A 1981-10-02 1982-09-02 Apparatus for high-duty spraying based on the principle of plasmatron CS245743B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD23381781A DD217964A3 (de) 1981-10-02 1981-10-02 Einrichtung zum hochratezerstaeuben nach dem plasmatronprinzip

Publications (2)

Publication Number Publication Date
CS638382A1 true CS638382A1 (en) 1985-04-16
CS245743B1 CS245743B1 (en) 1986-10-16

Family

ID=5533920

Family Applications (1)

Application Number Title Priority Date Filing Date
CS826383A CS245743B1 (en) 1981-10-02 1982-09-02 Apparatus for high-duty spraying based on the principle of plasmatron

Country Status (3)

Country Link
CS (1) CS245743B1 (cs)
DD (1) DD217964A3 (cs)
DE (1) DE3229969A1 (cs)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8700620A (nl) * 1987-03-16 1988-10-17 Hauzer Holding Kathode boogverdampingsinrichting alsmede werkwijze voor het bedrijven daarvan.
US5096562A (en) * 1989-11-08 1992-03-17 The Boc Group, Inc. Rotating cylindrical magnetron structure for large area coating
BE1003701A3 (fr) * 1990-06-08 1992-05-26 Saint Roch Glaceries Cathode rotative.
EP0543931A4 (en) * 1990-08-10 1993-09-08 Viratec Thin Films, Inc. Shielding for arc suppression in rotating magnetron sputtering systems
US5106474A (en) * 1990-11-21 1992-04-21 Viratec Thin Films, Inc. Anode structures for magnetron sputtering apparatus
US5108574A (en) * 1991-01-29 1992-04-28 The Boc Group, Inc. Cylindrical magnetron shield structure
DE4107505A1 (de) * 1991-03-08 1992-09-10 Leybold Ag Verfahren zum betrieb einer sputteranlage und vorrichtung zur durchfuehrung des verfahrens
DE4117367C2 (de) * 1991-05-28 1999-11-04 Leybold Ag Verfahren zur Erzeugung eines homogenen Abtragprofils auf einem rotierenden Target einer Sputtervorrichtung
US5364518A (en) * 1991-05-28 1994-11-15 Leybold Aktiengesellschaft Magnetron cathode for a rotating target
DE4117518C2 (de) * 1991-05-29 2000-06-21 Leybold Ag Vorrichtung zum Sputtern mit bewegtem, insbesondere rotierendem Target
US5571393A (en) * 1994-08-24 1996-11-05 Viratec Thin Films, Inc. Magnet housing for a sputtering cathode
US5527439A (en) * 1995-01-23 1996-06-18 The Boc Group, Inc. Cylindrical magnetron shield structure
DE19610253C2 (de) * 1996-03-15 1999-01-14 Fraunhofer Ges Forschung Zerstäubungseinrichtung
DE10145201C1 (de) * 2001-09-13 2002-11-21 Fraunhofer Ges Forschung Einrichtung zum Beschichten von Substraten mit gekrümmter Oberfläche durch Pulsmagnetron-Zerstäuben
DE10213043B4 (de) * 2002-03-22 2008-10-30 Von Ardenne Anlagentechnik Gmbh Rohrmagnetron und seine Verwendung
DE10234858A1 (de) * 2002-07-31 2004-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Einrichtung zur Erzeugung einer Magnetron-Entladung
PL1626433T3 (pl) * 2004-08-10 2007-06-29 Applied Mat Gmbh & Co Kg Urządzenie do rozpylania magnetronowego, cylindryczna katoda i sposób nakładania cienkich warstw wieloskładnikowych na podłoże
US20070089982A1 (en) * 2005-10-24 2007-04-26 Hendryk Richert Sputtering target and method/apparatus for cooling the target
US7504011B2 (en) * 2005-10-24 2009-03-17 Guardian Industries Corp. Sputtering target and method/apparatus for cooling the target
US7842355B2 (en) 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
DE502006008952D1 (de) † 2006-11-14 2011-04-07 Applied Materials Inc Magnetron-Sputterquelle, Sputter-Beschichtungsanlage und Verfahren zur Beschichtung eines Substrats
US8182662B2 (en) 2009-03-27 2012-05-22 Sputtering Components, Inc. Rotary cathode for magnetron sputtering apparatus
CN101994093B (zh) * 2009-08-14 2013-08-21 鸿富锦精密工业（深圳）有限公司 磁控溅镀装置
DE102010040759B4 (de) * 2010-09-14 2015-10-08 Von Ardenne Gmbh Kühlanordnung für Targets von Sputterquellen
DE102011075543B4 (de) * 2011-05-10 2015-10-08 Von Ardenne Gmbh Anordnung zur Kühlung eines längserstreckten Magnetron
DE102012203152A1 (de) * 2012-02-29 2013-08-29 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zum reaktiven Magnetronsputtern einer transparenten Metalloxidschicht
EP2746424B1 (de) 2012-12-21 2018-10-17 Oerlikon Surface Solutions AG, Pfäffikon Verdampfungsquelle
EP2778253B1 (de) 2013-02-26 2018-10-24 Oerlikon Surface Solutions AG, Pfäffikon Zylinderförmige Verdampfungsquelle

Also Published As

Publication number Publication date
CS245743B1 (en) 1986-10-16
DD217964A3 (de) 1985-01-23
DE3229969A1 (de) 1983-04-21

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