CS274947B2 - Method of chromium-passivated aluminium contact etching with high-duty semi-conductor structures - Google Patents
Method of chromium-passivated aluminium contact etching with high-duty semi-conductor structuresInfo
- Publication number
- CS274947B2 CS274947B2 CS176988A CS176988A CS274947B2 CS 274947 B2 CS274947 B2 CS 274947B2 CS 176988 A CS176988 A CS 176988A CS 176988 A CS176988 A CS 176988A CS 274947 B2 CS274947 B2 CS 274947B2
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- chromium
- conductor structures
- aluminium contact
- contact etching
- passivated aluminium
- Prior art date
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052782 aluminium Inorganic materials 0.000 title abstract 2
- 239000004411 aluminium Substances 0.000 title abstract 2
- 238000005530 etching Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- YAGKRVSRTSUGEY-UHFFFAOYSA-N ferricyanide Chemical compound [Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] YAGKRVSRTSUGEY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 239000011591 potassium Substances 0.000 abstract 1
Landscapes
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The goal of the solution is to etch the aluminium contact by passive chrome on power semiconductor structures. The contact layer is selectively etched at the temperature from 30 to 100 degrees Celsius though the photolithographic mask in the etching agent containing from 20 to 30 percent by weight of ferricyanide of potassium and from 10 to 20 percent by weight of potassium hydroxide, which are dissolved in deionised water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS176988A CS274947B2 (en) | 1988-03-18 | 1988-03-18 | Method of chromium-passivated aluminium contact etching with high-duty semi-conductor structures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS176988A CS274947B2 (en) | 1988-03-18 | 1988-03-18 | Method of chromium-passivated aluminium contact etching with high-duty semi-conductor structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CS8801769A1 CS8801769A1 (en) | 1990-11-14 |
| CS274947B2 true CS274947B2 (en) | 1991-12-17 |
Family
ID=5352929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS176988A CS274947B2 (en) | 1988-03-18 | 1988-03-18 | Method of chromium-passivated aluminium contact etching with high-duty semi-conductor structures |
Country Status (1)
| Country | Link |
|---|---|
| CS (1) | CS274947B2 (en) |
-
1988
- 1988-03-18 CS CS176988A patent/CS274947B2/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CS8801769A1 (en) | 1990-11-14 |
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