CS270880B1 - Method of especially for silicon plates cleaning - Google Patents
Method of especially for silicon plates cleaning Download PDFInfo
- Publication number
- CS270880B1 CS270880B1 CS888807A CS880788A CS270880B1 CS 270880 B1 CS270880 B1 CS 270880B1 CS 888807 A CS888807 A CS 888807A CS 880788 A CS880788 A CS 880788A CS 270880 B1 CS270880 B1 CS 270880B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- cleaning
- cleaning solution
- silicon plates
- silicon wafers
- high frequency
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 15
- 239000010703 silicon Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 4
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 230000010355 oscillation Effects 0.000 claims abstract 2
- 235000012431 wafers Nutrition 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 abstract 1
- 238000011109 contamination Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- -1 1 part of pproxide Substances 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004577 thatch Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Vynález sa týká sposobu čistenia najma křemíkových dosiek.The invention relates to a method for cleaning, in particular, silicon wafers.
Čistenie křemíkových dosiek sa v súčasnosti vykonává na mechanických čističkách, ktoré majú rotačně kartáče, alebo přívod tlakovej Čistiacej kvapaliny. Sú známe aj sprejové Čističky používajúce při čistění aerosol čistiaceho roztoku. Velmi rozšířený je ponorný spósob čistenia křemíkových dosiek. Ponorný spósob čistenia sa používá v kombinácii s vysoko frekvenčným ultrazvukovým žiarením, čo Čistenie podstatné urýchluje. Týmto spósobom sa dobře odstraňuje chemická kontaminácia, nečistoty mastného charakteru, odtlačky prstov i mechanické částice. Uvedené spósoby čistenia majú radu nevýhod, pričom odstraňovaníe me chanickej kontaminácie neprebieha dokonale. Čistiace zariadenia používajúce rotačně kartáče alebo tiež prúd tlakovej kvapaliny zanechávajú na křemíkových doškách zbytky kartáčov. Mechanickým čistěním dochádza к poškodzovaniu a lámaniu křemíkových dosiek. Sprejové čističky splňajú požiadavky na odstraňovanie chemickej kontaminácie, ale mechanické nečistoty odstraňujú nedostatočné.Silicon wafer cleaning is currently performed on mechanical cleaners that have rotary brushes or a supply of pressurized cleaning fluid. Spray cleaners using an aerosol cleaning solution are also known. The immersion method of silicon wafer cleaning is very widespread. The submersible cleaning method is used in combination with high frequency ultrasonic radiation, which significantly speeds up cleaning. In this way, chemical contamination, greasy impurities, fingerprints and mechanical particles are well removed. Said purification methods have a number of drawbacks, and the removal of the mechanical contamination is not perfect. Cleaning devices using rotary brushes, or alternatively a pressurized fluid jet, leave brush residues on silicon thatch. Mechanical cleaning leads to damage and breakage of the silicon wafer. Spray cleaners meet the requirements for removing chemical contamination, but mechanical impurities remove insufficient.
Vyššie uvedené nedostatky zmierňuje a technický problém rieši sposob čistenia najma křemíkových dosiek podlá vynálezu, ktorého podstata spočívá v tom, že na povrch křemíkových dosiek sa pósobí čistiacim roztokom pozostávajúcim po 4 až 7 dielov deionizovanej vody, 1 diela hydroxidu amonného, 1 diela peroxidu vodíka, tenzidu v koncentrácii 0,01 až 4% objemu čistiaceho roztoku za spolupósobenia vysokofrekvenčných ultrazvukových kmitov o frekvencii 0,2 až 1,2 MHz.The above-mentioned deficiencies are alleviated and the technical problem is solved by the method of cleaning of the silicon wafers according to the invention, which comprises treating the surface of the silicon wafers with a cleaning solution of 4 to 7 parts deionized water, 1 part ammonium hydroxide, 1 part hydrogen peroxide. % of the surfactant at a concentration of 0.01 to 4% by volume of the cleaning solution in conjunction with high frequency ultrasonic vibrations at a frequency of 0.2 to 1.2 MHz.
Spósobom čistenia křemíkových dosiek sa docieli urýchlenie čistia celého procesu a dokonalého odstránenia chemických a mechanických nečistót z křemíkových dosiek.By cleaning the silicon wafers, the entire process is cleaned up quickly and the chemical and mechanical impurities are removed from the silicon wafers.
Příkladné riešenie sposobu čistenia křemíkových dosiek je následovně: Na povrch křemíkových dosiek sa pósobí čistiacim roztokbm, ktorý pozostáva z 5 dielov deionizovanej vody, 1 diela hydroxidu amonného, 1 diela pproxidu vodíka, tenzidu v koncentrácii 0,1 % objemu čistiaceho roztoku. Na čistiaci roztok sa pósobí vysokof rekTVénčnými ultrazvukovými kmitmi o frekvenici 0,7 MHz.An exemplary solution for silicon wafer cleaning is as follows: A cleaning solution consisting of 5 parts deionized water, 1 part of ammonium hydroxide, 1 part of pproxide, surfactant at a concentration of 0.1% by volume of the cleaning solution is treated on the surface of the silicon wafer. The cleaning solution is subjected to high frequency ultrasonic vibrations at a frequency of 0.7 MHz.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS888807A CS270880B1 (en) | 1988-12-27 | 1988-12-27 | Method of especially for silicon plates cleaning |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS888807A CS270880B1 (en) | 1988-12-27 | 1988-12-27 | Method of especially for silicon plates cleaning |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CS880788A1 CS880788A1 (en) | 1989-12-13 |
| CS270880B1 true CS270880B1 (en) | 1990-08-14 |
Family
ID=5439151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS888807A CS270880B1 (en) | 1988-12-27 | 1988-12-27 | Method of especially for silicon plates cleaning |
Country Status (1)
| Country | Link |
|---|---|
| CS (1) | CS270880B1 (en) |
-
1988
- 1988-12-27 CS CS888807A patent/CS270880B1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CS880788A1 (en) | 1989-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI224031B (en) | Cleaning apparatus | |
| US3033710A (en) | Method of surface cleaning using ultrasonic energy | |
| TWI447799B (en) | Substrate cleaning method and substrate cleaning device | |
| KR100271190B1 (en) | Vacuum erosion chamber | |
| Mayer et al. | Megasonic cleaning: A new cleaning and drying system for use in semiconductor processing | |
| EP1044467A1 (en) | Post-lapping cleaning process for silicon wafers | |
| US7104268B2 (en) | Megasonic cleaning system with buffered cavitation method | |
| CN109860085A (en) | A kind of silicon wafer CMP post-processing equipment and processing flow | |
| CN109290279A (en) | A kind of glass light guide plate mildew cleaning process | |
| CN108296216A (en) | A kind of silicon wafer cleaning method | |
| US5820688A (en) | Method for the treatment of semiconductor material | |
| JPH07159980A (en) | Substrate cleaning equipment | |
| JP4482844B2 (en) | Wafer cleaning method | |
| CN210160074U (en) | Grinding device with cleaning function | |
| US6973934B2 (en) | Method for removing particles on semiconductor wafers | |
| JPH05175184A (en) | Wafer cleaning method | |
| CA2311650A1 (en) | Method and apparatus for the ultrasonic cleaning of a wire-drawing die | |
| JP4683314B2 (en) | Cleaning method for silicon substrate for semiconductor | |
| JP3871748B2 (en) | Electrode plate cleaning method for plasma processing apparatus | |
| JP2000040684A5 (en) | Cleaning equipment and cleaning method | |
| JP3349299B2 (en) | Wet processing method and processing apparatus | |
| JP2005150768A (en) | Cleaning method and electronic component cleaning method | |
| JPH08155408A (en) | Cleaning method for precision parts | |
| RU97112783A (en) | METHOD FOR SURFACE PROCESSING OF METAL APPLIANCES INTENDED FOR OPERATION IN HYDROGEN PEROXIDE SOLUTIONS | |
| KR20110000147A (en) | Silicon Solar Wafer Manufacturing Cleaner |