JP2000040684A5 - Cleaning equipment and cleaning method - Google Patents

Cleaning equipment and cleaning method Download PDF

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Publication number
JP2000040684A5
JP2000040684A5 JP1998223588A JP22358898A JP2000040684A5 JP 2000040684 A5 JP2000040684 A5 JP 2000040684A5 JP 1998223588 A JP1998223588 A JP 1998223588A JP 22358898 A JP22358898 A JP 22358898A JP 2000040684 A5 JP2000040684 A5 JP 2000040684A5
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JP
Japan
Prior art keywords
cleaned
cleaning
scrubbing
polishing
supplying
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Pending
Application number
JP1998223588A
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Japanese (ja)
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JP2000040684A (en
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Priority to JP10223588A priority Critical patent/JP2000040684A/en
Priority claimed from JP10223588A external-priority patent/JP2000040684A/en
Publication of JP2000040684A publication Critical patent/JP2000040684A/en
Publication of JP2000040684A5 publication Critical patent/JP2000040684A5/en
Pending legal-status Critical Current

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Description

【0001】
【発明の属する技術分野】
本発明は、半導体ウエハ等の被洗浄物を清浄にする洗浄装置および洗浄方法に関する。
[0001]
[Technical field to which the invention belongs]
The present invention relates to a cleaning device and a cleaning method for cleaning an object to be cleaned such as a semiconductor wafer.

本発明は上述した事情に鑑み、比較的簡略なスクラビング洗浄を主体として、ウエハ等の被洗浄材を、例えば検出限度(5×1010atom/cm)以下の十分な洗浄度に洗浄できるようにした洗浄装置および洗浄方法を提供することを目的とする。 In view of the above circumstances, the present invention mainly performs relatively simple scrubbing cleaning, and cleans a material to be cleaned such as a wafer with a sufficient cleaning degree of , for example, a detection limit (5 × 10 9 to 10 atom / cm 2) or less. It is an object of the present invention to provide a cleaning device and a cleaning method made possible.

【0008】
【課題を解決するための手段】
上記課題を解決するため本発明の洗浄装置では、被洗浄物にアンモニア過酸化水素加熱溶液を供給しながら行う第1のスクラビング洗浄装置と、被洗浄物に希ふっ酸溶液を供給しながら行う第2のスクラビング洗浄装置とを含むことを特徴とする。
0008
[Means for solving problems]
In order to solve the above problems, in the cleaning apparatus of the present invention, a first scrubbing cleaning apparatus is performed while supplying an ammonia hydrogen peroxide heating solution to the object to be cleaned, and a first scrubbing cleaning device is performed while supplying a dilute dilute acid solution to the object to be cleaned. It is characterized by including 2 scrubbing cleaning devices.

ここに、第1、第2のスクラビング洗浄装置の後段に、超音波の振動エネルギーを与えた純水をウエハ表面に噴射したり、キャビテーションを有する高圧水をウエハに噴射して洗浄する液噴射による洗浄装置を設けることが好ましく、これにより、例えば希ふっ酸溶液によって生じた活性表面による二次汚染を防止することができる。
本発明の研磨装置では、被研磨物を研磨する研磨手段と、上述の洗浄装置とを有し、研磨後の被洗浄物を前記洗浄装置で洗浄することを特徴とする。
本発明の洗浄方法では、被洗浄物にアンモニア過酸化水素加熱溶液を供給しながら行う第1のスクラビング洗浄工程と、前記被洗浄物に希ふっ酸溶液を供給しながら行う第2のスクラビング洗浄工程とを含むことを特徴とする。
本発明の研磨方法では、被研磨物を研磨する研磨工程と、研磨後の被洗浄物にアンモニア過酸化水素加熱溶液を供給しながら行う第1のスクラビング洗浄工程と、前記研磨後の被洗浄物に希ふっ酸溶液を供給しながら行う第2のスクラビング洗浄工程とを含むことを特徴とする。
Here, after the first and second scrubbing cleaning devices, pure water to which ultrasonic vibration energy is applied is sprayed onto the wafer surface, or high-pressure water having cavitation is sprayed onto the wafer to clean the wafer. It is preferable to provide a cleaning device, which can prevent secondary contamination by the active surface caused by, for example, a dilute dilute acid solution.
The polishing apparatus of the present invention has a polishing means for polishing an object to be polished and the above-mentioned cleaning apparatus, and is characterized in that the object to be cleaned after polishing is cleaned by the cleaning apparatus.
In the cleaning method of the present invention, a first scrubbing cleaning step performed while supplying an ammonia hydrogen peroxide heating solution to the object to be cleaned and a second scrubbing cleaning step performed while supplying a dilute dilute acid solution to the object to be cleaned. It is characterized by including and.
In the polishing method of the present invention, a polishing step of polishing the object to be polished, a first scrubbing cleaning step performed while supplying an ammonia hydrogen peroxide heating solution to the object to be polished after polishing, and the object to be polished after polishing. It is characterized by including a second scrubbing cleaning step performed while supplying a dilute dilute acid solution.

Claims (6)

被洗浄物にアンモニア過酸化水素加熱溶液を供給しながら行う第1のスクラビング洗浄装置と、前記被洗浄物に希ふっ酸溶液を供給しながら行う第2のスクラビング洗浄装置とを含むことを特徴とする洗浄装置。  Including a first scrubbing cleaning apparatus that is performed while supplying a heated ammonia hydrogen peroxide solution to an object to be cleaned, and a second scrubbing cleaning apparatus that is performed while supplying a diluted hydrofluoric acid solution to the object to be cleaned. Cleaning device to do. 前記被洗浄物を前記第1、第2のスクラビング洗浄装置により洗浄する順序を、搬送手段により前記被洗浄物を第1、第2のスクラビング洗浄装置間で任意に搬送することにより適宜選択可能なことを特徴とする請求項1に記載の洗浄装置。  The order in which the objects to be cleaned are cleaned by the first and second scrubbing cleaning apparatuses can be appropriately selected by arbitrarily transporting the objects to be cleaned between the first and second scrubbing cleaning apparatuses by a transport means. The cleaning apparatus according to claim 1. 前記第1、第2のスクラビング洗浄装置の後段に、液噴射による洗浄装置を設けたことを特徴とする請求項1または2に記載の洗浄装置。  The cleaning apparatus according to claim 1, wherein a cleaning apparatus using liquid injection is provided at a subsequent stage of the first and second scrubbing cleaning apparatuses. 被研磨物を研磨する研磨手段と、請求項1乃至3のいずれかに記載の洗浄装置とを有し、研磨後の被洗浄物を前記洗浄装置で洗浄することを特徴とする研磨装置。  A polishing apparatus comprising: a polishing unit that polishes an object to be polished; and the cleaning apparatus according to claim 1, wherein the object to be cleaned is cleaned by the cleaning apparatus. 被洗浄物にアンモニア過酸化水素加熱溶液を供給しながら行う第1のスクラビング洗浄工程と、前記被洗浄物に希ふっ酸溶液を供給しながら行う第2のスクラビング洗浄工程とを含むことを特徴とする洗浄方法。And a first scrubbing cleaning step performed while supplying a heated ammonia hydrogen peroxide solution to the object to be cleaned, and a second scrubbing cleaning step performed while supplying a diluted hydrofluoric acid solution to the object to be cleaned. How to wash. 被研磨物を研磨する研磨工程と、研磨後の被洗浄物にアンモニア過酸化水素加熱溶液を供給しながら行う第1のスクラビング洗浄工程と、前記研磨後の被洗浄物に希ふっ酸溶液を供給しながら行う第2のスクラビング洗浄工程とを含むことを特徴とする研磨方法。A polishing process for polishing the object to be polished, a first scrubbing cleaning process performed while supplying a heated ammonia hydrogen peroxide solution to the object to be cleaned, and a dilute hydrofluoric acid solution to the object to be cleaned after the polishing And a second scrubbing cleaning step that is performed.
JP10223588A 1998-07-23 1998-07-23 Cleaning equipment Pending JP2000040684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10223588A JP2000040684A (en) 1998-07-23 1998-07-23 Cleaning equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10223588A JP2000040684A (en) 1998-07-23 1998-07-23 Cleaning equipment

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JP2000040684A JP2000040684A (en) 2000-02-08
JP2000040684A5 true JP2000040684A5 (en) 2005-07-21

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4660494B2 (en) * 2007-02-15 2011-03-30 株式会社荏原製作所 Polishing cartridge
KR20130092217A (en) * 2012-02-10 2013-08-20 주식회사 엠엠테크 Wet treating apparatus
JP6312534B2 (en) 2014-06-10 2018-04-18 株式会社荏原製作所 Substrate cleaning device
JP6183720B2 (en) * 2015-04-10 2017-08-23 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method
JP7347986B2 (en) * 2019-08-06 2023-09-20 株式会社ディスコ edge trimming device
JP7433709B2 (en) 2020-02-20 2024-02-20 株式会社ディスコ Cleaning equipment and cleaning method

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
JP3326642B2 (en) * 1993-11-09 2002-09-24 ソニー株式会社 Substrate post-polishing treatment method and polishing apparatus used therefor
FR2722511B1 (en) * 1994-07-15 1999-04-02 Ontrak Systems Inc PROCESS FOR REMOVING METALS FROM A SCOURING DEVICE
JPH1092781A (en) * 1996-06-04 1998-04-10 Ebara Corp Method and equipment for carrying substrate
JPH10180198A (en) * 1996-10-21 1998-07-07 Ebara Corp Cleaning device

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