CS244934B2 - Thyristor with self protection against overvoltage - Google Patents
Thyristor with self protection against overvoltage Download PDFInfo
- Publication number
- CS244934B2 CS244934B2 CS833857A CS385783A CS244934B2 CS 244934 B2 CS244934 B2 CS 244934B2 CS 833857 A CS833857 A CS 833857A CS 385783 A CS385783 A CS 385783A CS 244934 B2 CS244934 B2 CS 244934B2
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- thyristor
- region
- control
- main thyristor
- amplification
- Prior art date
Links
- 230000003321 amplification Effects 0.000 claims description 35
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 35
- 239000002800 charge carrier Substances 0.000 claims description 9
- 229910001385 heavy metal Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 11
- 239000000969 carrier Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57112943A JPS594075A (ja) | 1982-06-30 | 1982-06-30 | サイリスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CS385783A2 CS385783A2 (en) | 1985-09-17 |
| CS244934B2 true CS244934B2 (en) | 1986-08-14 |
Family
ID=14599384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS833857A CS244934B2 (en) | 1982-06-30 | 1983-05-30 | Thyristor with self protection against overvoltage |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4646121A (ja) |
| EP (1) | EP0100136B1 (ja) |
| JP (1) | JPS594075A (ja) |
| CS (1) | CS244934B2 (ja) |
| DE (1) | DE3367701D1 (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3435548A1 (de) * | 1984-09-27 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher innerer zuendverstaerkung |
| US5243205A (en) * | 1989-10-16 | 1993-09-07 | Kabushiki Kaisha Toshiba | Semiconductor device with overvoltage protective function |
| US5883402A (en) * | 1995-11-06 | 1999-03-16 | Kabushiki Kaisha Toshiba | Semiconductor device and protection method |
| US6274892B1 (en) * | 1998-03-09 | 2001-08-14 | Intersil Americas Inc. | Devices formable by low temperature direct bonding |
| EP1157424B1 (de) * | 1999-02-22 | 2008-09-17 | Infineon Technologies AG | Verfahren zum einstellen der durchbruchspannung eines thyristors |
| US6690038B1 (en) | 1999-06-05 | 2004-02-10 | T-Ram, Inc. | Thyristor-based device over substrate surface |
| DE19947028A1 (de) * | 1999-09-30 | 2001-04-12 | Siemens Ag | Thyristor mit Spannungsstoßbelastbarkeit in der Freiwerdezeit |
| US6727528B1 (en) | 2001-03-22 | 2004-04-27 | T-Ram, Inc. | Thyristor-based device including trench dielectric isolation for thyristor-body regions |
| US6462359B1 (en) | 2001-03-22 | 2002-10-08 | T-Ram, Inc. | Stability in thyristor-based memory device |
| US7456439B1 (en) | 2001-03-22 | 2008-11-25 | T-Ram Semiconductor, Inc. | Vertical thyristor-based memory with trench isolation and its method of fabrication |
| US6891205B1 (en) | 2001-03-22 | 2005-05-10 | T-Ram, Inc. | Stability in thyristor-based memory device |
| SG124239A1 (en) * | 2002-01-23 | 2006-08-30 | Singapore Tech Aerospace Ltd | Close proximity weapon id system |
| US6666481B1 (en) | 2002-10-01 | 2003-12-23 | T-Ram, Inc. | Shunt connection to emitter |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1052447A (ja) * | 1962-09-15 | |||
| US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
| US4079403A (en) * | 1976-11-01 | 1978-03-14 | Electric Power Research Institute, Inc. | Thyristor device with self-protection against breakover turn-on failure |
| US4165517A (en) * | 1977-02-28 | 1979-08-21 | Electric Power Research Institute, Inc. | Self-protection against breakover turn-on failure in thyristors through selective base lifetime control |
| JPS53110483A (en) * | 1977-03-09 | 1978-09-27 | Hitachi Ltd | Thyristor |
| JPS5437589A (en) * | 1977-08-29 | 1979-03-20 | Mitsubishi Electric Corp | Semoconductor switching unit |
| JPS6016107B2 (ja) * | 1978-08-23 | 1985-04-23 | 株式会社日立製作所 | 自己保護型半導体制御整流装置 |
| JPS5641180A (en) * | 1979-09-05 | 1981-04-17 | Sumitomo Electric Industries | Vessel for composite transport |
| JPS57109373A (en) * | 1980-12-25 | 1982-07-07 | Mitsubishi Electric Corp | Semiconductor device |
-
1982
- 1982-06-30 JP JP57112943A patent/JPS594075A/ja active Pending
-
1983
- 1983-05-13 US US06/494,367 patent/US4646121A/en not_active Expired - Lifetime
- 1983-05-17 EP EP83302803A patent/EP0100136B1/en not_active Expired
- 1983-05-17 DE DE8383302803T patent/DE3367701D1/de not_active Expired
- 1983-05-30 CS CS833857A patent/CS244934B2/cs unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE3367701D1 (en) | 1987-01-02 |
| EP0100136A1 (en) | 1984-02-08 |
| CS385783A2 (en) | 1985-09-17 |
| US4646121A (en) | 1987-02-24 |
| JPS594075A (ja) | 1984-01-10 |
| EP0100136B1 (en) | 1986-11-12 |
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