CS231558B1 - Method of ionisation of stream of particles and device to perform the method - Google Patents
Method of ionisation of stream of particles and device to perform the method Download PDFInfo
- Publication number
- CS231558B1 CS231558B1 CS850579A CS850579A CS231558B1 CS 231558 B1 CS231558 B1 CS 231558B1 CS 850579 A CS850579 A CS 850579A CS 850579 A CS850579 A CS 850579A CS 231558 B1 CS231558 B1 CS 231558B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- stream
- cathode
- pole pieces
- hollow cathode
- gas
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
- C23C8/38—Treatment of ferrous surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/38—Guiding or centering of electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/40—Details, e.g. electrodes, nozzles using applied magnetic fields, e.g. for focusing or rotating the arc
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Thiazole And Isothizaole Compounds (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DD20984678A DD141932B1 (de) | 1978-12-18 | 1978-12-18 | Verfahren und vorrichtung zur teilchenstromionisierung und hochratebeschichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
CS231558B1 true CS231558B1 (en) | 1984-12-14 |
Family
ID=5515900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CS850579A CS231558B1 (en) | 1978-12-18 | 1979-12-06 | Method of ionisation of stream of particles and device to perform the method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS55123124A (de) |
CS (1) | CS231558B1 (de) |
DD (1) | DD141932B1 (de) |
DE (1) | DE2949121A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4407712A (en) * | 1982-06-01 | 1983-10-04 | The United States Of America As Represented By The Secretary Of The Army | Hollow cathode discharge source of metal vapor |
JPS59179152A (ja) * | 1983-03-31 | 1984-10-11 | Agency Of Ind Science & Technol | アモルファスシリコン半導体薄膜の製造方法 |
IT1211938B (it) * | 1987-11-27 | 1989-11-08 | Siv Soc Italiana Vetro | Apparecchiatura e procedimento per la deposizione di uno strato sottile su un substrato trasparente, particolarmente per la realizzazione di vetrature |
DE10111515A1 (de) * | 2001-02-19 | 2002-08-14 | Fraunhofer Ges Forschung | Plasma-Beschichtungsanlage, Plasma-Beschichtungsverfahren und Verwendung des Verfahrens |
US9136794B2 (en) | 2011-06-22 | 2015-09-15 | Research Triangle Institute, International | Bipolar microelectronic device |
-
1978
- 1978-12-18 DD DD20984678A patent/DD141932B1/de not_active IP Right Cessation
-
1979
- 1979-12-06 CS CS850579A patent/CS231558B1/cs unknown
- 1979-12-06 DE DE19792949121 patent/DE2949121A1/de not_active Withdrawn
- 1979-12-18 JP JP16364879A patent/JPS55123124A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DD141932B1 (de) | 1982-06-30 |
DE2949121A1 (de) | 1980-06-26 |
JPS55123124A (en) | 1980-09-22 |
DD141932A1 (de) | 1980-05-28 |
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