JPS55123124A - Method of and device for ionizing particle flow and forming high speed layer - Google Patents

Method of and device for ionizing particle flow and forming high speed layer

Info

Publication number
JPS55123124A
JPS55123124A JP16364879A JP16364879A JPS55123124A JP S55123124 A JPS55123124 A JP S55123124A JP 16364879 A JP16364879 A JP 16364879A JP 16364879 A JP16364879 A JP 16364879A JP S55123124 A JPS55123124 A JP S55123124A
Authority
JP
Japan
Prior art keywords
high speed
particle flow
forming high
speed layer
ionizing particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16364879A
Other languages
Japanese (ja)
Inventor
Raisu Giyunteru
Rosuto Manfureeto
Ieruku Erureru Hansu
Hennii Furiidoritsuhi
Kureemu Yotsuhien
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HOOHIBAAKUUMU DORESUDEN VEB
Original Assignee
HOOHIBAAKUUMU DORESUDEN VEB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HOOHIBAAKUUMU DORESUDEN VEB filed Critical HOOHIBAAKUUMU DORESUDEN VEB
Publication of JPS55123124A publication Critical patent/JPS55123124A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C23C8/38—Treatment of ferrous surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/38—Guiding or centering of electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/40—Details, e.g. electrodes, nozzles using applied magnetic fields, e.g. for focusing or rotating the arc
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Thiazole And Isothizaole Compounds (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP16364879A 1978-12-18 1979-12-18 Method of and device for ionizing particle flow and forming high speed layer Pending JPS55123124A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD20984678A DD141932B1 (en) 1978-12-18 1978-12-18 METHOD AND DEVICE FOR PARTICLE CURRENCY AND HIGH-RATE COATING

Publications (1)

Publication Number Publication Date
JPS55123124A true JPS55123124A (en) 1980-09-22

Family

ID=5515900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16364879A Pending JPS55123124A (en) 1978-12-18 1979-12-18 Method of and device for ionizing particle flow and forming high speed layer

Country Status (4)

Country Link
JP (1) JPS55123124A (en)
CS (1) CS231558B1 (en)
DD (1) DD141932B1 (en)
DE (1) DE2949121A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407712A (en) * 1982-06-01 1983-10-04 The United States Of America As Represented By The Secretary Of The Army Hollow cathode discharge source of metal vapor
JPS59179152A (en) * 1983-03-31 1984-10-11 Agency Of Ind Science & Technol Production of thin film
IT1211938B (en) * 1987-11-27 1989-11-08 Siv Soc Italiana Vetro APPARATUS AND PROCEDURE FOR THE DEPOSITION OF A THIN LAYER ON A TRANSPARENT SUBSTRATE, IN PARTICULAR FOR THE REALIZATION OF GLASS
DE10111515A1 (en) * 2001-02-19 2002-08-14 Fraunhofer Ges Forschung Plasma coating device used for coating metallic strip material in the manufacture of photovoltaic cells and modules comprises a hollow cathode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device

Also Published As

Publication number Publication date
DD141932B1 (en) 1982-06-30
DE2949121A1 (en) 1980-06-26
CS231558B1 (en) 1984-12-14
DD141932A1 (en) 1980-05-28

Similar Documents

Publication Publication Date Title
JPS54125900A (en) Method of and device for counting point of pseudooshooting
JPS55108752A (en) Semiconductor device and method of fabricating same
JPS5547850A (en) Method of abrasive and its device
JPS5626561A (en) Electrostatic collection method and apparatus of particle
JPS5533089A (en) Method of and device for sealing article part
JPS5567172A (en) Method of fabricating semiconductor and semiconductor device
JPS54158881A (en) Field effect device and method of fabricating same
JPS558296A (en) Method of and device for controlling train speed
JPS54158190A (en) Semiconductor device and method of fabricating same
JPS57117420A (en) Method of forming deposit and device for executing said method
GB2098317B (en) Method and device for control of airborne particles
JPS578609A (en) Method of packing film and device for said method
ZA79997B (en) Method of and apparatus for reducing back corona effects
JPS5511082A (en) Method and device for reducing luster of surface
JPS5593734A (en) Method and device for carrying corpuscular substance through pipeeline
JPS5795670A (en) Semiconductor device and method of producing same
JPS5568670A (en) Semiconductor device and method of forming electrode on partial range of semiconductor surface
JPS5539289A (en) Method of removing floating particle and its device
JPS57164572A (en) Field effect transistor device and method of producing same
JPS55144260A (en) Method and device for corona charging of moving surface
JPS5784172A (en) Semiconductor device and method of producing same
JPS54136281A (en) Semiconductor device and method of fabricating same
JPS55123124A (en) Method of and device for ionizing particle flow and forming high speed layer
JPS5756975A (en) V-mos field effect semiconductor device and method of producing same
JPS5760894A (en) Semiconductor device and method of producing same