CS213611B1 - Nuclear reactor from the cadmium telluride - Google Patents
Nuclear reactor from the cadmium telluride Download PDFInfo
- Publication number
- CS213611B1 CS213611B1 CS874876A CS874876A CS213611B1 CS 213611 B1 CS213611 B1 CS 213611B1 CS 874876 A CS874876 A CS 874876A CS 874876 A CS874876 A CS 874876A CS 213611 B1 CS213611 B1 CS 213611B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- cadmium telluride
- insulating layer
- single crystal
- detector
- nuclear reactor
- Prior art date
Links
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 13
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 3
- 230000005865 ionizing radiation Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005025 nuclear technology Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BG3197375 | 1975-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS213611B1 true CS213611B1 (en) | 1982-04-09 |
Family
ID=3901839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS874876A CS213611B1 (en) | 1975-12-30 | 1976-12-29 | Nuclear reactor from the cadmium telluride |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5292577A (nl) |
| CA (1) | CA1080372A (nl) |
| CS (1) | CS213611B1 (nl) |
| FR (1) | FR2337435A1 (nl) |
| GB (1) | GB1511410A (nl) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57149983A (en) * | 1981-03-12 | 1982-09-16 | Yokogawa Hokushin Electric Corp | Radiation detector |
| JPS62115391A (ja) * | 1985-11-13 | 1987-05-27 | Nippon Mining Co Ltd | ＣｄＴｅ放射線検出器 |
| JPS62226082A (ja) * | 1986-03-28 | 1987-10-05 | Yokogawa Electric Corp | β線検出装置 |
| FR2738080B1 (fr) * | 1995-08-24 | 1997-10-31 | Commissariat Energie Atomique | Dispositif de detection de rayons x a base de semi-conducteurs |
| WO2000003266A1 (fr) * | 1998-07-09 | 2000-01-20 | Mitsubishi Denki Kabushiki Kaisha | Detecteur de rayonnement |
-
1976
- 1976-12-22 JP JP15480676A patent/JPS5292577A/ja active Pending
- 1976-12-22 FR FR7638680A patent/FR2337435A1/fr active Granted
- 1976-12-29 CS CS874876A patent/CS213611B1/cs unknown
- 1976-12-30 GB GB5434076A patent/GB1511410A/en not_active Expired
- 1976-12-30 CA CA268,955A patent/CA1080372A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2337435A1 (fr) | 1977-07-29 |
| JPS5292577A (en) | 1977-08-04 |
| CA1080372A (en) | 1980-06-24 |
| GB1511410A (en) | 1978-05-17 |
| FR2337435B3 (nl) | 1979-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kemmer et al. | Performance and applications of passivated ion-implanted silicon detectors | |
| US6350989B1 (en) | Wafer-fused semiconductor radiation detector | |
| US7060523B2 (en) | Lithium-drifted silicon detector with segmented contacts | |
| US2885562A (en) | Photoelectric device | |
| CS213611B1 (en) | Nuclear reactor from the cadmium telluride | |
| US3390449A (en) | Method for preparation and encapsulation of germanium gamma ray detectors | |
| US4056726A (en) | Coaxial gamma ray detector and method therefor | |
| US3863072A (en) | Semiconductor localization detector | |
| US3586857A (en) | Semiconductor electron detector | |
| GB916402A (en) | Photoelectric power generator | |
| CN110611009B (zh) | 嵌套式三维沟槽电极硅探测器 | |
| WO2014015285A2 (en) | Field-shaping multi-well avalanche detector for direct conversion amorphous selenium | |
| JPS6174375A (ja) | 半導体放射線検出器 | |
| JPS6161708B2 (nl) | ||
| US4122345A (en) | Semiconductor detector for detecting ionizing radiation | |
| US3320495A (en) | Surface-barrier diode for detecting high energy particles and method for preparing same | |
| JPS6327868B2 (nl) | ||
| Drummond | High purity germanium radiation detectors | |
| JP2000292544A (ja) | 放射線検出器 | |
| Williams et al. | Electron Emission from The Schottky Barrier Structure ZnS: Pt: Cs | |
| Dearnaley | Semiconductor nuclear radiation detectors | |
| JPS59114875A (ja) | 半導体放射線検出器 | |
| Lee | Radiation induced currents across Al2O3 films | |
| JPS61174778A (ja) | 半導体中性子線検出器の製造方法 | |
| Ziemba et al. | Properties of an n+ i p+ Semiconductor Detector |