WO2000003266A1 - Detecteur de rayonnement - Google Patents

Detecteur de rayonnement Download PDF

Info

Publication number
WO2000003266A1
WO2000003266A1 PCT/JP1998/003086 JP9803086W WO0003266A1 WO 2000003266 A1 WO2000003266 A1 WO 2000003266A1 JP 9803086 W JP9803086 W JP 9803086W WO 0003266 A1 WO0003266 A1 WO 0003266A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
semiconductor element
semiconductor
substrate
detecting apparatus
Prior art date
Application number
PCT/JP1998/003086
Other languages
English (en)
Japanese (ja)
Inventor
Kazunori Ikegami
Original Assignee
Mitsubishi Denki Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Denki Kabushiki Kaisha filed Critical Mitsubishi Denki Kabushiki Kaisha
Priority to PCT/JP1998/003086 priority Critical patent/WO2000003266A1/fr
Publication of WO2000003266A1 publication Critical patent/WO2000003266A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like

Definitions

  • the present invention relates to a radiation detector used for a gas monitor for measuring the concentration of a radioactive rare gas in a nuclear power plant or the like.
  • Landscape technology used for a radiation detector used for a gas monitor for measuring the concentration of a radioactive rare gas in a nuclear power plant or the like.
  • FIG. 8 is a cross-sectional view showing an ionization chamber which is a conventional radiation detection apparatus shown on page 148 of Glenn F. Kno11 Radiation Measurement Handbook Second Edition (Nikkan Kogyo Shimbun), page 148.
  • 1 1 is a center electrode
  • 1 2 is an outer electrode
  • 13 is an ammeter for measuring the ionization current flowing between the center electrode 11 and the outer electrode
  • 14 is a current meter from the outer electrode 12.
  • a protection ring 15 for preventing leakage current is an insulator for insulating the electrodes 11, 12, and 13 respectively.
  • the radiation incident on the ionization chamber generates an electron-ion pair, and the electrons flow to the ammeter 13 by moving the electrons to the positively applied center electrode 11 and the ions to the outer electrode 12. By measuring this current, the intensity of the incident radiation is detected.
  • a voltage V is applied between the protective ring 14 and the outer electrode to prevent leakage current.
  • Each of the electrodes 11, 12, 13 is insulated by an insulator 15.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a radiation detection device that can achieve low cost, small size, high performance, and long life.
  • Disclosure of the invention has a semiconductor device that outputs a current pulse when irradiated with radiation, and a substrate that fixes at least one semiconductor device to the plate surface.
  • the substrate on which the semiconductor element is fixed is a polygonal pillar-shaped substrate, and the semiconductor element is fixed on each plate surface.
  • CdTe or CdZnTe compound semiconductor is used as the semiconductor element.
  • the semiconductor element is housed in an environmentally resistant cylindrical container.
  • the semiconductor elements are stacked in two layers, and the sum of the currents flowing through the respective semiconductor elements is measured to detect radiation.
  • FIG. 1 is a perspective view showing a radiation detecting apparatus according to Embodiment 1 of the present invention.
  • FIG. 2 is a perspective view showing a radiation detecting apparatus according to Embodiment 2 of the present invention.
  • FIG. 3 is a front view showing a radiation detecting apparatus according to Embodiment 2 of the present invention.
  • FIG. 4 is a perspective view showing a radiation detecting apparatus according to Embodiment 3 of the present invention.
  • FIG. 5 is a perspective view showing a radiation detecting apparatus according to Embodiment 4 of the present invention.
  • FIG. 6 is a block diagram showing a radiation detecting apparatus according to Embodiment 5 of the present invention.
  • FIG. 7 is a block diagram showing a radiation detecting apparatus according to Embodiment 6 of the present invention.
  • FIG. 8 is a cross-sectional view showing a conventional radiation detector. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 is a perspective view of the radiation detecting apparatus according to the first embodiment.
  • reference numeral 1 denotes a semiconductor element that outputs a current pulse by an applied charge (not shown) when radiation is irradiated
  • 2 denotes a semiconductor element.
  • This is a substrate for fixing the semiconductor element 1 and connecting a plurality of the semiconductor elements.
  • the semiconductor element 1 when radiation enters the semiconductor crystal, holes and electrons are generated by the interaction with the starting electrons of the semiconductor substance, and if an electric field is applied, a pulse-like electric conduction is generated. Occurs and outputs a current pulse that is an electric signal corresponding to the incident radiation.
  • the case where the semiconductor element 1 is fixed by the substrate 2 has been described.
  • a triangular prism substrate 2-1 is provided, and three surfaces of the substrate 2-1 are provided.
  • the case where the semiconductor element 1 is fixed by the one-plane substrate 2 has been described.
  • a quadrangular prism substrate 2-2 is provided.
  • the same effect can be obtained even if the substrate is a polygonal prism having four or more prisms.
  • the semiconductor element 1 is fixed to the triangular prism substrate 2-1 and is exposed to the outside.
  • the triangular prism substrate 2-1 By installing the triangular prism substrate 2-1 on which the semiconductor element 1 is fixed in a cylindrical environment-resistant container 3, detection can be performed without directly exposing the semiconductor element to high temperatures even in a bad environment such as a high temperature in a nuclear power plant. The device can be used while maintaining sensitivity.
  • Embodiment 5 In the first embodiment, the case where the semiconductor element 1 is fixed to the substrate 2 and the radiation is detected by detecting a current pulse has been described. However, as shown in FIG.
  • a microammeter 4 was connected between the negative electrode 1-2 and the positive electrodes 1-3 to measure the minute current flowing through the semiconductor element 1 in response to the incident radiation and detect the radiation. As compared to detecting radiation by measuring current with current pulses, the measuring means can be simplified and the cost of the apparatus can be reduced.
  • the fifth embodiment has described the case where there is only one semiconductor element, as shown in FIG. 7, the positive electrodes of the two semiconductor elements 1 are laminated in two layers by combining the positive electrodes. 3 and the negative electrodes are negative electrodes 1-2. Then, the positive electrodes 113 are connected to the microammeter 4 at the positive terminal, and the negative electrodes 112 are commonly connected to the negative terminal of the microammeter 4. As a result, the sum of the minute currents from the respective semiconductor elements 1 flows in the minute ammeter 4 corresponding to the incident radiation, so that the radiation detection sensitivity is improved and the cost of the apparatus can be reduced as in the fifth embodiment. . Industrial applicability

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)

Abstract

Ce détecteur de rayonnement, qui est constitué de plusieurs éléments semi-conducteurs (1) fixés, produit des impulsions de courant après avoir été soumis à un rayonnement dirigé sur un substrat (2).
PCT/JP1998/003086 1998-07-09 1998-07-09 Detecteur de rayonnement WO2000003266A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/003086 WO2000003266A1 (fr) 1998-07-09 1998-07-09 Detecteur de rayonnement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/003086 WO2000003266A1 (fr) 1998-07-09 1998-07-09 Detecteur de rayonnement

Publications (1)

Publication Number Publication Date
WO2000003266A1 true WO2000003266A1 (fr) 2000-01-20

Family

ID=14208589

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1998/003086 WO2000003266A1 (fr) 1998-07-09 1998-07-09 Detecteur de rayonnement

Country Status (1)

Country Link
WO (1) WO2000003266A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009156800A (ja) * 2007-12-27 2009-07-16 Tohoku Univ 放射線検出器及びこれを備えた装置

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4328630Y1 (fr) * 1966-02-10 1968-11-25
JPS5292577A (en) * 1975-12-30 1977-08-04 Inst Fuijika Na Tabaadoto Taya Nucleous radiation detector
JPS56129380A (en) * 1980-03-13 1981-10-09 Fuji Electric Co Ltd Semiconductor radioactive rays detector
JPS57105982U (fr) * 1980-12-22 1982-06-30
JPS60224079A (ja) * 1984-04-23 1985-11-08 Toshiba Corp 放射線測定装置
JPS63182870A (ja) * 1987-01-26 1988-07-28 Nippon Mining Co Ltd 積層型ＣｄＴｅ放射線検出素子
JPS6442488U (fr) * 1987-09-08 1989-03-14
JPH05223942A (ja) * 1991-11-07 1993-09-03 Power Reactor & Nuclear Fuel Dev Corp フレキシブルアーム型小型放射線測定器
JPH06242251A (ja) * 1993-02-12 1994-09-02 Power Reactor & Nuclear Fuel Dev Corp 原子炉内γ線・中性子束測定装置
JPH07128454A (ja) * 1993-11-08 1995-05-19 Fuji Electric Co Ltd 半導体放射線検出器
JPH07134181A (ja) * 1993-11-11 1995-05-23 Aloka Co Ltd 放射線検出装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4328630Y1 (fr) * 1966-02-10 1968-11-25
JPS5292577A (en) * 1975-12-30 1977-08-04 Inst Fuijika Na Tabaadoto Taya Nucleous radiation detector
JPS56129380A (en) * 1980-03-13 1981-10-09 Fuji Electric Co Ltd Semiconductor radioactive rays detector
JPS57105982U (fr) * 1980-12-22 1982-06-30
JPS60224079A (ja) * 1984-04-23 1985-11-08 Toshiba Corp 放射線測定装置
JPS63182870A (ja) * 1987-01-26 1988-07-28 Nippon Mining Co Ltd 積層型ＣｄＴｅ放射線検出素子
JPS6442488U (fr) * 1987-09-08 1989-03-14
JPH05223942A (ja) * 1991-11-07 1993-09-03 Power Reactor & Nuclear Fuel Dev Corp フレキシブルアーム型小型放射線測定器
JPH06242251A (ja) * 1993-02-12 1994-09-02 Power Reactor & Nuclear Fuel Dev Corp 原子炉内γ線・中性子束測定装置
JPH07128454A (ja) * 1993-11-08 1995-05-19 Fuji Electric Co Ltd 半導体放射線検出器
JPH07134181A (ja) * 1993-11-11 1995-05-23 Aloka Co Ltd 放射線検出装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009156800A (ja) * 2007-12-27 2009-07-16 Tohoku Univ 放射線検出器及びこれを備えた装置

Similar Documents

Publication Publication Date Title
US4445036A (en) Solid state fast-neutron spectrometer/dosimeter and detector therefor
Beusch et al. The RICH counter in the CERN hyperon beam experiment
JP6148329B2 (ja) ガンマ線に対する感度を高めた固体放射線検出器
EP0490783A2 (fr) Dispositif de détection neutronique à dynamique étendue pour le contrôle et la commande des réacteurs nucléaires
US7022996B2 (en) Radiation detector
US3366790A (en) Nuclear radiation detector comprising multiple ionization chamber with hemisphericalshaped electrodes
CN104620387B (zh) 光子计数半导体探测器
WO2000003266A1 (fr) Detecteur de rayonnement
US10797195B2 (en) Ionizing radiation sensor based on float-zone silicon with p-type conductivity
Hutton et al. Diamond-based radiation detectors for very high dose rate environments–
US8481957B2 (en) Ionizing radiation detector
WO2000033106A1 (fr) Detecteur de neutrons a l'etat solide a base de carbure de bore et son procede d'utilisation
US4039808A (en) Solid state ionization chamber of silicon pn-junction type
RU2469354C1 (ru) Нейтронный детектор
JP2007240467A (ja) 開放窓型電離箱
KR100423536B1 (ko) 가돌리늄막을 가진 ｐＭＯＳＦＥＴ센서와 ｐＭＯＳＦＥＴ센서 및 감산기를 사용하여 감마선／열중성자를 동시에 검출하는 실시간 전자적 선량계 및 그 검출방법
RU2231808C1 (ru) Дозиметр ионизирующих излучений на основе алмазного детектора
Anderson Development of proportional counters using photosensitive gases and liquids
Ambrosio et al. Aging measurements on glass RPCs
JPH06180370A (ja) 中性子モニタ
JP2000292544A (ja) 放射線検出器
Gongadze Micromegas chambers for the experiment ATLAS at the LHC (A Brief Overview)
RU109873U1 (ru) Многоэлементный полупроводниковый детектор для регистрации альфа-частиц в нейтронном генераторе со статическим вакуумом и чувствительный элемент для него
JPH08122443A (ja) 放射線検出装置
Pal et al. Development of a compact MWPC detector

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN JP US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase