CS213611B1 - Nuclear reactor from the cadmium telluride - Google Patents
Nuclear reactor from the cadmium telluride Download PDFInfo
- Publication number
- CS213611B1 CS213611B1 CS874876A CS874876A CS213611B1 CS 213611 B1 CS213611 B1 CS 213611B1 CS 874876 A CS874876 A CS 874876A CS 874876 A CS874876 A CS 874876A CS 213611 B1 CS213611 B1 CS 213611B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- cadmium telluride
- insulating layer
- single crystal
- detector
- nuclear reactor
- Prior art date
Links
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 13
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 3
- 230000005865 ionizing radiation Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005025 nuclear technology Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Vynález se týká jaderného detektoru z teluridu kademnatého, který je použitelný v lékařství, v armádě a v jaderné technice.The present invention relates to a cadmium telluride nuclear detector for use in medicine, the military and nuclear technology.
Je známý detektor z teluridu kademnatého, jehož kontakty jsou identické. Nevýhodou tohoto detektoru je průrazné napětí na 100 V.v důsledku vysokých svodových proudů.There is a known cadmium telluride detector whose contacts are identical. The disadvantage of this detector is the breakdown voltage to 100 V. due to high leakage currents.
V popisu vynálezu u USA patentu č. 3 563 704 Je popsán dozimetr k měření ionizačního záření a vysokou energií, v němž sitlivý element tvoří struktura MOS. Záření dopadající na strukturu MOS vyvolává v izolační kysličníkové vrstvě vznik párů elektron - díra a kladného prostorového náboje. Aby začal protékat proud, který je měřítkem dávky absorbovaného záření? jé třeba detektor zahřát až na 200 °C. Druhou nevýhodou je skutečnost, že k detekci se nevyužívá celého objemu monokrystalu křemíku, což má za následek nízkou detekční účinnost.U.S. Pat. No. 3,563,704 discloses a dosimeter for measuring ionizing radiation and high energy in which the absorbent element forms the MOS structure. The radiation incident on the MOS structure causes the formation of electron-hole pairs and positive spatial charge in the insulating oxide layer. To start the current, which is a measure of the dose of absorbed radiation? the detector should be heated up to 200 ° C. A second disadvantage is the fact that the entire volume of the silicon single crystal is not used for detection, which results in low detection efficiency.
Předmětem vynálezu, který odstraňuje uvedené nedostatky, je jaderný detektor z teluridu kademnatého s platinovou katodou nanesenou elektrolyticky na naleptanou plochu monokrystalu teluridu kademnatého a s anodovou strukturou MIS. Podstata vynálezu spočívá v tom, že hliníková anoda je vakuově napařena na izolační vrstvu zakrývající plochu monokrystalu teluridu kademnatého, přičemž celý objem monokrystalu teluridu kademnatého tvoří citlivý element detektoru.The object of the invention, which removes the above drawbacks, is a cadmium telluride nuclear detector with a platinum cathode deposited electrolytically on the etched cadmium telluride single crystal surface and with the anode structure of MIS. The principle of the invention is that the aluminum anode is vacuum-vapor deposited on an insulating layer covering the cadmium telluride single crystal surface, the entire volume of the cadmium telluride single crystal being a sensitive detector element.
Výhodou detektoru podle vynálezu je zmenšený svodový proud, zlepšená šumová charakteristika v důsledku sníženého svodového proudu a udržování silného elektrického pole ve velkéThe advantages of the detector according to the invention are reduced leakage current, improved noise characteristics due to reduced leakage current and maintaining a strong electric field in a large
213 611 oblasti ochuzení, což zajiěluje vysokou účinnost a rozlišovací schopnost. Silné elektrické pole potlačuje polarizaci krystalu.213 611 impoverishment, which provides high efficiency and resolution. A strong electric field suppresses polarization of the crystal.
Na výkrese je znázorněn příčný řez detektorem podle vynálezu. Na Jedné straně monokrystalu 1^ teluridu kademnatého Je elektrolyticky nanesená platinová katoda 2 na vyleptané ploše monokrystalu 1. Na druhé straně monokrystalu 1 Je vakuově napařená hliníková anoda £. Mezi hliníkovou anodou £a stěnou monokrystalu 1 Je napařená izolační vrstva která má t.ioněíkuThe drawing shows a cross-section of a detector according to the invention. On one side of the cadmium telluride single crystal 1, a platinum cathode 2 is electrolytically deposited on the etched surface of single crystal 1. On the other side of single crystal 1, an aluminum anode 6 is vacuum-vaporized. Between the aluminum anode 6 and the single crystal wall 1 there is a vaporized insulating layer having
0,006 nm0.006 nm
Když na detektor působí ionizační zářeni, vznikají v celém objemu krystalu 1 polovodiče páry díra - elektron, a působením silného elektrického pole mezi anodou £ a katodou 2. se elektrony pohybují к anodě £ a díry ke katodě 2. Při vhodné volbě kontaktů pro vysokoohmový monokrystal 1 teluridu kademnatého lze k.detektoru přiložit vysoké napětí až 2 000 V. Elektrické signály vznikající při ozáření Jsou úměrné energii absorbovaného ionizujícího záření.When ionizing radiation is applied to the detector, a hole-electron vapor semiconductor is produced throughout the crystal volume 1, and by the strong electric field between the anode 6 and the cathode 2, the electrons move toward the anode 4 and the holes toward the cathode 2. 1 cadmium telluride can be applied to the detector with a high voltage of up to 2,000 V. Electrical signals generated during irradiation are proportional to the energy of the absorbed ionizing radiation.
Skutečnost, že tenká izolační vrstva tvoří mezilehlou vrstvu mezi monokrystalem 1 a anodou £ z hliníku, drasticky snižuje závěrný proud.The fact that the thin insulating layer forms an intermediate layer between the single crystal 1 and the aluminum anode 6 drastically reduces the reverse current.
Claims (3)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BG3197375 | 1975-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS213611B1 true CS213611B1 (en) | 1982-04-09 |
Family
ID=3901839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS874876A CS213611B1 (en) | 1975-12-30 | 1976-12-29 | Nuclear reactor from the cadmium telluride |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5292577A (en) |
| CA (1) | CA1080372A (en) |
| CS (1) | CS213611B1 (en) |
| FR (1) | FR2337435A1 (en) |
| GB (1) | GB1511410A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57149983A (en) * | 1981-03-12 | 1982-09-16 | Yokogawa Hokushin Electric Corp | Radiation detector |
| JPS62115391A (en) * | 1985-11-13 | 1987-05-27 | Nippon Mining Co Ltd | Cdte radiant ray detector |
| JPS62226082A (en) * | 1986-03-28 | 1987-10-05 | Yokogawa Electric Corp | Beta ray detecting device |
| FR2738080B1 (en) * | 1995-08-24 | 1997-10-31 | Commissariat Energie Atomique | SEMICONDUCTOR-BASED X-RAY DETECTION DEVICE |
| WO2000003266A1 (en) * | 1998-07-09 | 2000-01-20 | Mitsubishi Denki Kabushiki Kaisha | Radiation detector |
-
1976
- 1976-12-22 JP JP15480676A patent/JPS5292577A/en active Pending
- 1976-12-22 FR FR7638680A patent/FR2337435A1/en active Granted
- 1976-12-29 CS CS874876A patent/CS213611B1/en unknown
- 1976-12-30 GB GB5434076A patent/GB1511410A/en not_active Expired
- 1976-12-30 CA CA268,955A patent/CA1080372A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1511410A (en) | 1978-05-17 |
| CA1080372A (en) | 1980-06-24 |
| FR2337435A1 (en) | 1977-07-29 |
| JPS5292577A (en) | 1977-08-04 |
| FR2337435B3 (en) | 1979-08-31 |
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