CS201148B1 - Process for removing melt from semiconductive material at epitaxtal growth from liquid phase - Google Patents
Process for removing melt from semiconductive material at epitaxtal growth from liquid phase Download PDFInfo
- Publication number
- CS201148B1 CS201148B1 CS574577A CS574577A CS201148B1 CS 201148 B1 CS201148 B1 CS 201148B1 CS 574577 A CS574577 A CS 574577A CS 574577 A CS574577 A CS 574577A CS 201148 B1 CS201148 B1 CS 201148B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- melt
- semiconductor material
- liquid phase
- epitaxtal
- growth
- Prior art date
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- 239000000463 material Substances 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 14
- 239000007791 liquid phase Substances 0.000 title claims 2
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000155 melt Substances 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
Vynález sa týká spósobu odstraňovania taveniny z polovodičového materiálu pri epitaxii z kvapalnej fázy.The present invention relates to a method of removing melt from a semiconductor material in liquid phase epitaxy.
Odstraňovanie taveniny z povrchu polovodičového materiálu sa doteraz robilo týmito postupmi: 1. Vlastnou váhou taveniny pri vysávaní polovodičového materiálu. V tomto případe sa odstraňuje tavenina nedoatatočne, lebo okrem vlastnej váhy nepósobí na ňu žiadna iné sila.Removal of the melt from the surface of the semiconductor material has hitherto been accomplished by the following procedures: 1. Self weight of the melt when vacuuming the semiconductor material. In this case, the melt is removed inadequately, since no other force is exerted on it except for its own weight.
2. Mechanicky, keá tekutá tavenina sa odstraňuje grafitovou doátičkou, ktoré sa posúva po povrchu alebo tesne nad povrchom polovodičovej doštičky. Tento postup má nedostatok v tom, že při mechanickom odstraňovaní taveniny z povrchu polovodičového materiálu sa nedostává hrana doštičky odstraňujúcej taveninu do dostatočného styku s jej povrchom, lebo povrch polovodičového materiálu bývá niekedy nerovný, a preto na nej zanechává zbytky taveniny. Okrem toho dochádza pri ich tesnom styku k mechanickému poškodeniu polovodičového materiálu. 3. Odstředivou silou. Pri tomto postupe sa polovodičový materiál aj s taveninou uvedie do rotačného pohybu a vzniknutá odstředivá sila vytláča taveninu z povrchu polovodičového materiálu. Nedostatkom tohto postupu je, že zariadenie je konstrukčně komplikované, tavenina sa odstraňuje hlavně pri členitejšom povrchu polovodičového materiálu po čaatiach a malé kvapóčky taveniny sa odstraňujú ťažko.2. Mechanically, which liquid melt is removed by a graphite plate that slides over or just above the surface of the semiconductor wafer. This process has the drawback that, when mechanically removing the melt from the surface of the semiconductor material, the edge of the melt removal plate does not get in sufficient contact with its surface because the surface of the semiconductor material is sometimes uneven and therefore leaves melt residues on it. In addition, their close contact causes mechanical damage to the semiconductor material. 3. Centrifugal force. In this process, the semiconductor material and the melt are rotated and the resulting centrifugal force forces the melt from the surface of the semiconductor material. The disadvantage of this process is that the device is structurally complicated, the melt is removed mainly at the more rugged surface of the semiconductor material after the tumbling and the small droplets of the melt are difficult to remove.
Vyššie uvedené nedostatky sa odstraňujú spósobom podTa vynálezu.The above drawbacks are overcome by the method of the invention.
Podstata vynálezu spočívá v tom, že na vyaúvajúci sa polovodičový materiál z taveniny saIt is an object of the present invention to provide a melt protruding semiconductor material
201 148201 148
201 148 působí vibráciami o frekvenci! 10 až 150 000 Hz.201 148 causes frequency vibrations! 10 to 150,000 Hz.
Spůsobom podlá vynálezu sa dosahuje dokonalejšie oddelovanie taveniny z povrchu polovodičového materiálu ako u doteraz používaných postupov a súčasne je jednoduchší ako odstředivý spůsob.The process of the invention achieves a more complete separation of the melt from the surface of the semiconductor material than with the processes used hitherto, and at the same time is simpler than the centrifugal process.
Na pripojenom výkrese je znázorněné epitaxné zariadenie využívajúce spůsob podle vynálezu.The attached drawing shows an epitaxial device utilizing the method of the invention.
Zariadenie na prevédzanie tohto spůsobu sa skládá z kremennej ampule 1, z výhřevného vinutia 2, z grafitovej nádobky 3, z taveniny 4, z nosnej tyčky 5, z vibrátore 6, z vibrujúcej nosnej tyčky 7, z držiaka polovodičového materiálu 8 a z polovodičového materiálu v tvare okrúhlej doštičky 9,The device for conveying this method consists of a quartz ampoule 1, a heating coil 2, a graphite vessel 3, a melt 4, a support rod 5, a vibrator 6, a vibrating support rod 7, a semiconductor material holder 8 and a semiconductor material in Round plate shape 9,
Příklad 1Example 1
V ampule z křemenného skla 1, okolo ktoréj je navinutá výhřevná Spirála 2, je umieatnená grafitová nádoba 3 o priemere 60 mm, v ktorej je tavenina o obsahu 90 % véh. india a 10 % váh indium-antimonidu. Doteraz popísané časti sú nepohyblivé. Pomocou nosnej tyčky na ktorej je upevněný vibrátov 6, sa do taveniny vaúvajú a z nej vysúvajú vibrujúce časti: vibrujúca nosná tyčka 7, držiak polovodičovej doštičky 8 a polovodičové doštička 9. Pracovný priestor je preplachlovaný čistým vodíkom. Po vyhriatí taveniny na teplotu 270 °C sa pohyblivý siel, skladajúoi sa z nosnej tyčky 5, z vibrujúcej nosnej tyčky 7, z vibrátore 6, z držiaka polovodičového materiálu 8 a z polovodičového materiálu 9, vsunie do taveniny tak, aby aa polovodičový materiál o priemere 20 mm úplné ponořil do taveniny 4. Počas chladnutia taveniny 4 z 270 °C na 260 °C nařasté na polovodičovom materiáli 9 indium-antimonidová epitaxná vrstva o hrúbke asi 30 um. Po dosiahnutí teploty 260 °C sa zapne vibrátor 6, ktorý cez vibrujúcu noanú tyčku 7 a držiak polovodičového materiálu 8 uvedie do kmitavého pohybu polovodičový materiál 9. Pri vysávaní polovodičového materiálu 9 z taveniny, uvedený kmitavý pohyb spůsobuje lepšie oddelovania taveniny 4 od polovodičovej doštičky 9. Použitá vibračná frekvencia bola 450 Hz. Příkon privádzaný na elektromagnetický^vibrátor 6 bol 30 W,In a quartz glass vial 1, around which a heating coil 2 is wound, a 60 mm diameter graphite vessel 3 is placed in which the melt contains 90% of the weights. indium and 10% by weight indium antimonide. The parts described so far are immovable. By means of the support rod on which the vibrators 6 are fixed, vibrating parts are drawn into and out of the melt: the vibrating support rod 7, the semiconductor wafer holder 8 and the semiconductor wafer 9. The working space is purged with pure hydrogen. After the melt has been heated to 270 ° C, the moving silo, consisting of a support rod 5, a vibrating support rod 7, a vibrator 6, a semiconductor material holder 8 and a semiconductor material 9, is inserted into the melt so that aa semiconductor material of diameter 20 mm completely immersed in the melt 4. While cooling the melt 4 from 270 ° C to 260 ° C accrued on the semiconductor material 9 an indium-antimonide epitaxial layer of about 30 µm thickness. Upon reaching a temperature of 260 ° C, the vibrator 6 is switched on, which vibrates the semiconductor material 9 via the vibrating rod 7 and the semiconductor material holder 8 in the oscillating movement. The vibration frequency used was 450 Hz. The power supplied to the electromagnetic vibrator 6 was 30 W,
Příklad 2Example 2
Podobné ako v příklade 1 bolo použité to isté zariadenie na vytvorenie vrstiev gáliaarzénu pri použití taveniny o zložení 3,6 g gália a 0,13 g gélia-aržfcnu pri použitéj teplote 750 °C s ochladením na 740 °C a pri použití vibračných fřekvencií 8500 Hz a 90 000 Hz. ,Similar to Example 1, the same device was used to form gallium arsenic layers using a 3.6g gallium melt and 0.13g gel-arsenic at a temperature of 750 ° C with cooling to 740 ° C using a vibration frequency of 8500 Hz and 90,000 Hz. .
Spůsob podlá vynálezu je možno použiť vo všetkých prípadoch, v ktorých sa vyskytujú problémy s odstraňováním kvapalnej taveniny z povrchu polovodičového materiálu.The process according to the invention can be used in all cases where there are problems with removing the liquid melt from the surface of the semiconductor material.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS574577A CS201148B1 (en) | 1977-09-05 | 1977-09-05 | Process for removing melt from semiconductive material at epitaxtal growth from liquid phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS574577A CS201148B1 (en) | 1977-09-05 | 1977-09-05 | Process for removing melt from semiconductive material at epitaxtal growth from liquid phase |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS201148B1 true CS201148B1 (en) | 1980-10-31 |
Family
ID=5402925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS574577A CS201148B1 (en) | 1977-09-05 | 1977-09-05 | Process for removing melt from semiconductive material at epitaxtal growth from liquid phase |
Country Status (1)
| Country | Link |
|---|---|
| CS (1) | CS201148B1 (en) |
-
1977
- 1977-09-05 CS CS574577A patent/CS201148B1/en unknown
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