CS199892B1 - Method of epithax layer growth on semiconductor material at epithaxis from liquid phase - Google Patents
Method of epithax layer growth on semiconductor material at epithaxis from liquid phase Download PDFInfo
- Publication number
- CS199892B1 CS199892B1 CS574677A CS574677A CS199892B1 CS 199892 B1 CS199892 B1 CS 199892B1 CS 574677 A CS574677 A CS 574677A CS 574677 A CS574677 A CS 574677A CS 199892 B1 CS199892 B1 CS 199892B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- semiconductor material
- melt
- liquid phase
- epithaxis
- epithax
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 18
- 239000000463 material Substances 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 7
- 239000007791 liquid phase Substances 0.000 title 1
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 3
- 239000000155 melt Substances 0.000 description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009548 growth disturbance Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
(54) SpCsob rastu epitaxnej vrstvy ne polovodičovom materiáli při epitaxii z kvapalnej fázy(54) Spit of epitaxial layer growth on semiconductor material in liquid phase epitaxy
Vynález sa týká spósobu rastu epitaxnej vrstvy na polovodičovom materiáli pri epitaxii z kvapalnej fázy použitím vibrácií a spadá do oblasti polovodičovéj technologie.The present invention relates to a process for the growth of an epitaxial layer on a semiconductor material in a liquid phase epitaxy using vibrations and is within the field of semiconductor technology.
Doteraz známe zariadenie na vyhotovenie epitaxných vrstiev pozostáva z nepohyblivej grafitovéj vaničky, v ktorej je umiestnené kvapalná tavenina a pohyblivého držiaka, na ktorom je připevněný polovodičový materiál, ktorý aa ponára do taveniny. Počas chladnutia taveniny na povrchu polovodičového materiálu narastá epitaxná vrstva. Je známe, že ak sa privedú vibrácie do taveniny, táto sa lepšie homogenizuje, čo obmedzuje poruchy rastu epitaxnej vrstvy. Doteraz známe zariadenia privádzali vibrácie do taveniny cez nádobu, v ktorej bola tavenina umieetnená. Tento spósob dává vyššiu účinnost v homogenizácii taveniny, ale menej vplýva na bezporuchový rast epitaxnej vrstvy.The prior art apparatus for making epitaxial layers consists of a stationary graphite tray in which a liquid melt is disposed and a movable holder on which a semiconductor material is fixed and immersed in the melt. As the melt cools on the surface of the semiconductor material, the epitaxial layer grows. It is known that when vibrations are introduced into the melt, it is better homogenized, limiting the growth disturbances of the epitaxial layer. Previously known devices have supplied vibrations to the melt through a vessel in which the melt has been placed. This method gives a higher efficiency in melt homogenization, but less affects the trouble-free growth of the epitaxial layer.
Vyššie uvedené nedostatky sa odstraňujú spósobom podTa vynálezu.The above drawbacks are overcome by the method of the invention.
Podstata vynálezu spočívá v tom, že počas nerastania epitaxnej vrstvy sa privádzajú na polovodičový materiál vibrácie o frekvencii 10 až 150 000 Hž cez jeho držiak.SUMMARY OF THE INVENTION The principle of the invention is that during the non-growth of the epitaxial layer, vibrations are applied to the semiconductor material at a frequency of 10 to 150,000 Hz through its holder.
Výhodou vynálezu je, že aa účinnejšie nepomáhá bezporuchovému rastu epitaxnej vrstvy, čo má priaznivý vplyv na elektrické parametre přechodu medzi polovodičovým materiálom a narastenou epitaxnou vrstvou.An advantage of the invention is that aa does not more effectively assist in the smooth growth of the epitaxial layer, which has a beneficial effect on the electrical parameters of the transition between the semiconductor material and the grown epitaxial layer.
Na pripojenom výkrese je znázorněné epitaxné zariadenie, využívajúce spósob podTa vynálezu.The attached drawing shows an epitaxial device utilizing the method of the invention.
199 892199 892
199 892199 892
Zariadenie sa akladá z kremennej ampule 1, výhřevného vinutia 2, z grafitovej nádobky J, z taveniny £, z nosnej tyčky g, z vibrátore 6, z vibrujúcej nosnej tyčky g, z držiaka polovodičového materiálu 8 a z polovodičového materiálu £.The apparatus consists of a quartz ampoule 1, a heating coil 2, a graphite vessel J, a melt 6, a support rod g, a vibrator 6, a vibrating support rod g, a semiconductor material holder 8 and a semiconductor material 6.
Příklad 1Example 1
V ampule z křemenného skla χ, okolo ktorej je navinutá výhřevná elektrická Spirála 2, je umiestnená grafitová nádobka g o priemere 60 mm, v ktorej je tavenina o zložení 90 hmotnostných percent india a 10 hmotnostných percent india-antimonu. Doteraz popísáné časti sú nepohyblivé. Pomocou nosnej tyčky g, na ktorej je umieetnený elektromagnetický vibrátor 6, sa do taveniny veúvajú a z nej vyaúvajú vibrujúce časti: vibrujúca nosná tyčka g, držiak polovodičového materiálu 8 a polovodičový materiál g. Pracovný priestor je preplachovsný čistým vodíkora. Po vyhriatí taveniny na teplotu 270 °C sa pohyblivý diel, skládájúci sa z nosnej tyčky g, z vibrujúcej nosnej tyčky g, z vibrátore 6, z držiaka polovodičovéj doStičky 8 a z polovodičovéj doStičky g vsunie do taveniny tak, aby sa polovodičová doátička g o priemere 20 mm úplné ponořila do taveniny 4· Počas chladnutia taveniny £ z 270 °C na 260 °C sa uvedie do činnosti pomocou nízkofrekvenčného generátore vibrátor 6, ktorý svojimi vibráciemi podporuje dokonalejší rast epitaxnej vrstvy. Vzniknutá vratva mala hrůbku asi 30 pm. Po dosiahnutí 260 °C sa polovodičový materiál vysunie z taveniny. Použitá vibračná frekvencie bola 450 Hz. Elektrický příkon privádzaný na elektromagnetický vibrátor bol 10 VI,In a quartz glass ampoule around which a heating electric coil 2 is wound, a graphite container g 60 mm in diameter is disposed in which the melt is composed of 90 weight percent indium and 10 weight percent indium-antimony. The parts described so far are immovable. By means of the support rod g on which the electromagnetic vibrator 6 is placed, vibrating parts are drawn into and extracted from the melt: the vibrating support rod g, the holder of the semiconductor material 8 and the semiconductor material g. The workspace is flushed with pure hydrogen. After the melt has been heated to 270 ° C, the moving part consisting of the support rod g, the vibrating support rod g, the vibrator 6, the semiconductor plate holder 8 and the semiconductor plate g are inserted into the melt so that the semiconductor plate has a diameter of 20 · While the melt is cooled from 270 ° C to 260 ° C, a vibrator 6 is activated by means of a low-frequency generator which, by vibration, promotes a better growth of the epitaxial layer. The resulting rebound had a depth of about 30 µm. After reaching 260 ° C, the semiconductor material is extruded from the melt. The vibration frequency used was 450 Hz. The electrical power supplied to the electromagnetic vibrator was 10 VI,
Příklad 2Example 2
Podobné eko v příklade 1 sa použilo to isté zariadenie na vytvorenie vrstiev gáliaarzénu pri použití taveniny o zložení 3,6 g gália a 0,13 g gália-arzénu pri použitej teplote 750 °C s ochladením na 740 °C a pri použití vibračnej frekvencie 4300 Hz. Výsledkom bola narastená vrstva gália-arzénu o hrúbke 8 ^im.A similar eco in Example 1 was used by the same device to form galliarzene layers using a 3.6g gallium and 0.13g gallium-arsenic melt at a temperature of 750 ° C with cooling to 740 ° C and using a vibration frequency of 4300 Hz. As a result, an 8 µm thick gallium-arsenic layer was grown.
Příklad 3Example 3
Podobné ako v příklade 1 sa použilo to isté zariadenie na vytvorenie vrstiev gáliaarzénu pri použití taveniny o zložení 3,6 g gália a 0,16 g gália-arzénu pri použití teploty 780 °C a ochladením na 765 °C při použití vibračnej frekvencie 120 KHz. Získala sa tým vrstva gália-arzénu o hrúbke 15 (im.Similar to Example 1, the same device was used to form gallium arsenic layers using a 3.6g gallium melt and 0.16g gallium arsenic at 780 ° C and cooling to 765 ° C using a 120 KHz vibration frequency . This gave a layer of gallium-arsenic having a thickness of 15 .mu.m.
Spfisob podl’a vynálezu je možno použit vo všetkých prípadoch epitaxného rastu z kvspalné j fázy, ke3 chceme zdokonaliv rast epitaxnej vrstvy.The method according to the invention can be used in all cases of epitaxial growth from the quaternary phase, if we want to improve the growth of the epitaxial layer.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS574677A CS199892B1 (en) | 1977-09-05 | 1977-09-05 | Method of epithax layer growth on semiconductor material at epithaxis from liquid phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS574677A CS199892B1 (en) | 1977-09-05 | 1977-09-05 | Method of epithax layer growth on semiconductor material at epithaxis from liquid phase |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS199892B1 true CS199892B1 (en) | 1980-08-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS574677A CS199892B1 (en) | 1977-09-05 | 1977-09-05 | Method of epithax layer growth on semiconductor material at epithaxis from liquid phase |
Country Status (1)
| Country | Link |
|---|---|
| CS (1) | CS199892B1 (en) |
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1977
- 1977-09-05 CS CS574677A patent/CS199892B1/en unknown
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