CN88102279A - Aluminium titanium film resistor temperature sensor and preparation method - Google Patents
Aluminium titanium film resistor temperature sensor and preparation method Download PDFInfo
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- CN88102279A CN88102279A CN88102279.9A CN88102279A CN88102279A CN 88102279 A CN88102279 A CN 88102279A CN 88102279 A CN88102279 A CN 88102279A CN 88102279 A CN88102279 A CN 88102279A
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Abstract
Aluminium, titanium double-layer metal film RTD belong to electronics solid state sensor technical field.For make the transducer miniaturization, operating temperature range is wide and highly sensitive, has adopted titanium, aluminium double-layer film structure, fine pattern design and process technology.Temperature sensor is encapsulated in the micro metal shell, and resistance value is 600-13 0 Ω, resistance positive temperature coefficient about 4200 * 10
-5/ ℃, can in positive 200 ℃～-200 ℃ temperature range, use, maximum nonlinearity is less than 0.5%.
Description
The present invention relates to a kind of sedimentation and photoetching process are deposited with aluminium titanium double layer of metal film on the silicon oxide insulation substrate RTD, it belongs to electronics solid state sensor technical field.The invention still further relates to the preparation method of this aluminium titanium film resistor temperature sensor.
In the prior art, most of metal thin film resistor temperature sensor is made with metal materials such as nickel, tungsten, platinum.A kind of thin nickel metal film RTD of describing of United States Patent (USP) (US 4139833) for example.It is deposit one deck silicon monoxide insulating barrier on ceramic substrate; use mask deposit layer of metal nickel film then, form spiral snake shape pattern, area is 0.140 * 0.140 * 0.0015inches; its resistance value is 1000 Ω, at last deposit one deck silicon monoxide protective layer again.Nickel or W film temperature sensor have higher sensitivity, but because resistance positive temperature coefficient is too high, thereby resistance value becomes very little when low temperature, temperature linearity is very poor, is not suitable for using under negative 200 ℃ low temperature.The resistance positive temperature coefficient of platinum is higher, can keep the linear change of resistance in negative 200 ℃ low temperature range, good heat sensitivity is also arranged, but make difficulty, cost costliness.The method for preparing the metal thin film resistor temperature sensor in the prior art is not that direct depositing metal forms pattern on silicon oxide substrate.For example on mica, quartz or Sapphire Substrate directly the method for deposit aluminium film (File 13: Inspec 1958683, A87102411, B87056641), but the processing technology complexity, cost is very high, and wayward thin-film electro resistance and positive temperature coefficient of resistance thereof.
The objective of the invention is to design a kind of aluminium titanium bilayer film RTD.The metallic aluminium that adopts resistance positive temperature coefficient temperature linearity wider range slightly higher than platinum resistance is as temperature sensing material.Because the resistivity of metallic aluminium is lower,, make the temperature sensor microminiaturization so adopt membrane structure and crooked strip pattern to improve the film resistor of aluminium lamination.Between aluminium lamination and silicon oxide substrate, add one deck titanium layer to increase its adhesion property, make transducer can be in positive 200 ℃～negative 200 ℃ of scopes operate as normal.The standard electric ionization potential of titanium and aluminium only differs from 0.03 volt, and both engage and are difficult for taking place different electrolytic etching of metal corrosiveness.The resistivity of titanium is bigger at least 16 times than the resistivity of aluminium, and when titanium layer thickness was about aluminum layer thickness 1/10, titanium layer was very little to the parallel connection influence of aluminium lamination resistance.Another object of the present invention is providing the preparation method who uses sedimentation and photoetching method aluminium titanium film resistor temperature sensor.On the silicon oxide insulation substrate, the titanium of deposit successively aluminium double layer of metal film, with titanium film 4 as transition zone, be formed on the aluminium titanium double-layer film structure on the silicon dioxide insulator substrate 3 and adopt crooked strip design, both consider the superperformance of temperature sensor, taken the further microminiaturization of device when producing and the qualification rate of product again into account.
Aluminium titanium film resistor temperature sensor is made of metal base 1, chip 2, insulating oxide silicon substrate 3, titanium film 4, aluminium film 5, Si-Al wire 6, lead-out wire 7 and pipe cap.Silicon chip thick thin layer of silicon oxide 3, titanium film 4 and aluminium film 5 of the heat about 1 μ m of growth in the high-temperature oxydation stove with polishing is 10
-5～10
-6In the vacuum chamber of torr purity all is heated by resistive evaporation or electron beam evaporation or sputter greater than 99.97% titanium and aluminum metallic material, first deposit titanium film 4 on silicon oxide insulation substrate 3, deposit aluminium film 5 again, substrate is heated to 100 ℃～350 ℃.Titanium film 4 is the intermediate layer, and aluminium film 5 is a superficial layer.The speed control of deposit is between per second 3～25 dusts.The thickness of titanium film 4 is 500～700 dusts, and the thickness of aluminium film 5 is 4000～7000 dusts.Resist coating then; carry out exposure with the metal pattern mask; wet method (or dry method) erodes unnecessary photoresist; form the crooked strip pattern on the mask; till revealing to titanium film with phosphoric acid solution etching aluminium film under the protection of photoresist; with the strip pattern of rare hf etching titanium film until the formation bending, its width is 4～6 μ m again, and length-width ratio is (1.2～1.9) * 10
4Respectively set up a lead wire bonding point at 1/10 and 1/5 place of crooked strip pattern line.The resistance value that makes aluminium titanium double-layer metal film is 600～1300 Ω, resistance positive temperature coefficient about 4200 * 10
-6/ ℃, maximum nonlinearity is less than 0.5% in positive 200 ℃～negative 200 ℃ temperature range.Then remove photoresist, divide chip 2, with the silver slurry chip 2 bonding with sintering on metal base 1, it is firm to carry out sintering under 350 ℃～400 ℃.Connect with carrying out bonding between the lead-out wire 7 of Si-Al wire 6 with the presser feet of chip 2 and base.The sensor that preliminary survey is qualified and pipe cap need bake with high temperature, get rid of steam, and at room temperature relative temperature is lower than in 15% the dry nitrogen gas and carries out sealing cap.Place packaged transducer the high temperature ageing that carried out under 250 ℃ the temperature 1 hour to handle at last.
The present invention compared with prior art has following characteristics:
1. highly sensitive operating temperature range is wide.Use the double-layer film structure of aluminium titanium metal material, make this temperature sensor have resistance value and the resistance positive temperature coefficient higher than platinum resistance, make simultaneously between film and the silicon oxide insulation substrate and have good adhesion property, can bear positive 200 ℃～negative 200 ℃ variations in temperature, and have the linear relationship of good resistance-temperature, referring to table 1.
Table 1: aluminum layer thickness is to the relation of its resistance value and resistance positive temperature coefficient
Aluminium lamination resistance aluminum layer thickness temperature coefficient of resistance
（Ω） （
） ×10
-6/℃
500 8000 4245
600 6520 4241
800 5000 4237
1000 4000 4083
3000 1340 3210
The experimental data of listing in table 1 shows, when aluminum layer thickness during less than 4000 dusts, the aluminium lamination positive temperature coefficient of resistance descends very soon.
2. volume is little, response is fast.With the temperature sensing material of aluminum metal as transducer, aluminium film 5 is easy to prepare, carries out microfabrication easily, helps to reduce aluminium film 5 thickness, improves sheet resistance.Also carry out bonding on the aluminium lamination easily, realization is connected with lead-out wire 7.On titanium layer and aluminium lamination and interface that insulating layer of silicon oxide contacts, can generate TiO respectively
2And TiAl
3Compound, thus it is firm bonding that the three is formed.This adhesion is to form automatically in deposition process, does not need to make aluminium lamination avoid once unnecessary oxidation through high-temperature process again.Like this, the thickness of aluminium lamination and sheet resistance all are well controlled.Compact conformation makes this temperature sensor can accomplish miniaturization, and accelerates response speed.
3. reliability height, aluminium lamination surface energy self-sow layer of oxide layer can play the passivation protection effect.Also there is passivation layer on the surface of titanium, makes sensor performance stable.The standard electric ionization potential of titanium and aluminium only differs from 0.03 volt, and both engage and are difficult for taking place different electrolytic etching of metal corrosiveness.The resistivity of titanium is bigger at least 16 times than the resistivity of aluminium, and titanium film 4 thickness are 1/10 of aluminium film 5 thickness approximately, thereby titanium layer is very little to the parallel connection influence of aluminium film 5 resistance.Be strict controlled in relative temperature under the room temperature and be lower than in 15% the drying nitrogen and carry out the shell encapsulation, carry out 1 hour burin-in process of 250 ℃ of high temperature after the encapsulation again, make this temperature sensor have can long-term work reliability, and stable work in work.
Accompanying drawing 1 is the structure and local Jie of aluminium titanium film resistor temperature sensor to cut open figure.Wherein 1 is the metal base, the 2nd, and chip, the 3rd, insulating oxide silicon substrate, the 4th, titanium film, the 5th, aluminium film, the 6th, Si-Al wire, the 7th, lead-out wire.
α＝ 1/(R
0) (dR
T)/(dT) = 1/(R
0) ((R
T-R
0))/(T-T
0)
=4237×10
-6/℃
Wherein, T
oTemperature is 0 ℃.The resistance value of T transducer is R
TThe time temperature.
R
oThe resistance value of transducer in the time of 0 ℃.R
TThe resistance value of transducer in the time of T ℃.
The positive temperature coefficient of α sensor resistance.
Can calculate maximum nonlinearity by following formula:
δ
max= (R
A-R
C)/(R
max-R
min) =0.3%
Wherein, R
ADepart from maximum resistance value with fitting a straight line
R
CResistance value on the fitting a straight line
R
MaxHighest resistance
R
MinLowest resistance value
δ
MaxMaximum nonlinearity
(R（t）-R（o）)/(R（o）) ＝0.4%
This explanation, the stable performance of this temperature sensor, reliable.
Aluminium titanium film resistor temperature sensor is a kind of novel temperature sensor. Compare with platinum resistance temperature sensor, have higher resistance positive temperature coefficient and resistance value, thereby have that higher sensitivity, volume are little, response is fast, easy to manufacture, with low cost and the advantages such as easy batch production. Compare with thermistor temperature sensor, have that operating temperature range is wide, good linearity, stable performance, reliability height, an anti-advantage such as shake, thereby it has the prospect that can generally apply in every field.
Claims (6)
1, aluminium titanium film resistor temperature sensor is made of metal base 1, chip 2, insulating oxide silicon substrate 3, titanium film 4, aluminium film 5, Si-Al wire 6, lead-out wire 7 and pipe cap, it is characterized in that adopting the resistance value that is deposited with the titanium film 4 that is etched into crooked strip pattern, aluminium film 5 double-layer film structures, aluminium titanium film on insulating oxide silicon substrate 3 is 600～1300 Ω, and resistance positive temperature coefficient is about 4200 * 10
-6/ ℃, maximum nonlinearity is less than 0.5% in positive 200 ℃～negative 200 ℃ temperature range.
2, temperature sensor according to claim 1, the thickness that it is characterized in that titanium film 4 is 500～700 dusts, and the aluminium film thickness is 4000～7000 dusts, and the width of titanium film 4 and aluminium film 5 is 4～6 μ m, and length-width ratio is (1.2～1.9) * 10
4
3,, it is characterized in that titanium film 4, aluminium film 5 bilayer films form 1/10 and 1/5 place of crooked strip pattern line a lead wire bonding point is respectively arranged according to claim 1,2 described temperature sensors.
4, according to the preparation method of claim 1,2,3 described aluminium titanium film resistor temperature sensors, comprise oxidation, evaporation, photoetching, scribing, sintering or eutectic welding, bonding, encapsulation and burin-in process, it is characterized in that titanium film 4, aluminium film 5 bilayer films being etched into crooked strip pattern with photoetching process and etch (dry method and wet method), the etching error of metal wire is no more than ± 1 μ m, respectively sets up a lead wire bonding point at 1/10 and 1/5 place of crooked strip pattern line.
5, the preparation method of temperature sensor according to claim 4 is characterized in that 10
-5～10
-6In the vacuum of torr, purity is heated by resistive evaporation for titanium and aluminum metal greater than 99.97%, or electron beam evaporation, or sputtering method, successively deposit titanium film 4 and aluminium film 5 are on silicon oxide insulation substrate 3, and deposition rate is controlled between per second 3 dusts～25 dusts, and the thickness of titanium film 4 is 500～700 dusts, the aluminium film thickness is 4000～7000 dusts, and the deposit of titanium film 4 and aluminium film 5 will once be finished in same vacuum chamber.
6, the preparation method of temperature sensor according to claim 4, it is characterized in that metal base 1, pipe cap are after high-temperature roasting, at room temperature relative humidity is lower than in 15% the dry nitrogen gas and carries out, encapsulation finish and test passes after, in 250 ℃ of temperature, carry out 1 hour burin-in process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 88102279 CN1007764B (en) | 1988-04-18 | 1988-04-18 | Film resistance temp. sensor and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 88102279 CN1007764B (en) | 1988-04-18 | 1988-04-18 | Film resistance temp. sensor and manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN88102279A true CN88102279A (en) | 1988-11-30 |
| CN1007764B CN1007764B (en) | 1990-04-25 |
Family
ID=4832091
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 88102279 Expired CN1007764B (en) | 1988-04-18 | 1988-04-18 | Film resistance temp. sensor and manufacturing method |
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|---|---|
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7839478B2 (en) | 2005-07-15 | 2010-11-23 | Samung Electronics Co., Ltd. | Temperature sensor for display device, thin film transistor array panel including the temperature sensor, liquid crystal display, driving circuit for liquid crystal display and flicker controlling system for liquid crystal display |
| CN102346077A (en) * | 2010-07-22 | 2012-02-08 | 博格华纳贝鲁系统有限公司 | Temperature sensor |
| CN103776558A (en) * | 2013-12-09 | 2014-05-07 | 中北大学 | Transient temperature sensor |
| CN104807554A (en) * | 2015-03-03 | 2015-07-29 | 江苏多维科技有限公司 | Coppery thermal resistor thin film temperature sensor chip and manufacturing method thereof |
| CN105047152A (en) * | 2015-08-05 | 2015-11-11 | 昆山龙腾光电有限公司 | Display module |
| CN105241568A (en) * | 2015-09-26 | 2016-01-13 | 哈尔滨工程大学 | Manufacturing method of flexible temperature sensor |
| CN107389740A (en) * | 2017-08-03 | 2017-11-24 | 上海发电设备成套设计研究院有限责任公司 | A kind of on-line monitoring system of heating surface fume side wear extent and etching extent |
| CN108169293A (en) * | 2018-02-11 | 2018-06-15 | 中国工程物理研究院总体工程研究所 | High-precision film resistor hydrogen gas sensor calibration device and Calibration Method |
| CN111397776A (en) * | 2019-11-13 | 2020-07-10 | 中国科学院微电子研究所 | Temperature and pressure composite sensor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100768175B1 (en) * | 2001-02-07 | 2007-10-17 | 삼성에스디아이 주식회사 | Functional film having an improved optical and electrical properties |
-
1988
- 1988-04-18 CN CN 88102279 patent/CN1007764B/en not_active Expired
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7839478B2 (en) | 2005-07-15 | 2010-11-23 | Samung Electronics Co., Ltd. | Temperature sensor for display device, thin film transistor array panel including the temperature sensor, liquid crystal display, driving circuit for liquid crystal display and flicker controlling system for liquid crystal display |
| CN102346077A (en) * | 2010-07-22 | 2012-02-08 | 博格华纳贝鲁系统有限公司 | Temperature sensor |
| CN103776558A (en) * | 2013-12-09 | 2014-05-07 | 中北大学 | Transient temperature sensor |
| CN103776558B (en) * | 2013-12-09 | 2017-01-11 | 中北大学 | transient temperature sensor |
| CN104807554A (en) * | 2015-03-03 | 2015-07-29 | 江苏多维科技有限公司 | Coppery thermal resistor thin film temperature sensor chip and manufacturing method thereof |
| CN105047152A (en) * | 2015-08-05 | 2015-11-11 | 昆山龙腾光电有限公司 | Display module |
| CN105241568A (en) * | 2015-09-26 | 2016-01-13 | 哈尔滨工程大学 | Manufacturing method of flexible temperature sensor |
| CN105241568B (en) * | 2015-09-26 | 2018-03-13 | 哈尔滨工程大学 | A kind of manufacture method of flexible temperature sensor |
| CN107389740A (en) * | 2017-08-03 | 2017-11-24 | 上海发电设备成套设计研究院有限责任公司 | A kind of on-line monitoring system of heating surface fume side wear extent and etching extent |
| CN107389740B (en) * | 2017-08-03 | 2023-08-29 | 上海发电设备成套设计研究院有限责任公司 | Online monitoring system for abrasion loss and corrosion loss of flue gas side of heating surface |
| CN108169293A (en) * | 2018-02-11 | 2018-06-15 | 中国工程物理研究院总体工程研究所 | High-precision film resistor hydrogen gas sensor calibration device and Calibration Method |
| CN111397776A (en) * | 2019-11-13 | 2020-07-10 | 中国科学院微电子研究所 | Temperature and pressure composite sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1007764B (en) | 1990-04-25 |
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