CN86200234U - Device for single crystal continue growth - Google Patents
Device for single crystal continue growth Download PDFInfo
- Publication number
- CN86200234U CN86200234U CN 86200234 CN86200234U CN86200234U CN 86200234 U CN86200234 U CN 86200234U CN 86200234 CN86200234 CN 86200234 CN 86200234 U CN86200234 U CN 86200234U CN 86200234 U CN86200234 U CN 86200234U
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- crystal
- temperature
- furnace
- crystal pulling
- single crystal
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Abstract
The device for single crystal continuous growth is the equipment for single crystal continuous growth. The utility model is characterized in continuously conducting crystal pulling and anneal. The utility model integrates the crystal pulling furnace and the anneal furnace. The device for single crystal continuous growth is controlled by a temperature control device to realize continuous heat. The number of the crystal pulling head can be one or more. The utility model can effectively decrease investments, save energy consumption and improve labor productivity.
Description
The utility model belongs to the equipment of crystal pulling method single crystal growing.
Crystal pulling method is a kind of important method of single crystal growing, and normally a single crystal growing furnace once lifts one.Its method is finished shove charge, intensification, annealing, is lowered the temperature, goes out crystalline substance with an annealing furnace again at first finishing reinforced, intensification, crystal pulling, lower the temperature, go out crystalline substance with a crystal pulling furnace.If the crucible that crystal pulling is used is a platinum matter, can make its effective rate of utilization low because of intensification, temperature-fall period spended time; Take man-hour, consumes energy because of intensification, the temperature-fall period of annealing furnace again on the other hand.
A kind of continuous drawing KCL crystal technology appears abroad in early eighties.Its thinking is to prolong the crystal pulling time, increases crystalline length, sees V.T, J such as Gorilfsky.Grysfal Groufh 52（1981）509。Its measure is constantly to present raw material in the crystal pulling process, keeps constant level, level surface method such as is commonly called as.This method has only increased crystalline length, and the crystalline process of growth remains with a crystal pulling furnace and finishes reinforced, intensification, crystal pulling, lowers the temperature, goes out crystalline substance, finishes shove charge, intensification, annealing, lowers the temperature, goes out crystalline substance and finish the crystal pulling whole process with an annealing furnace again.Shortcomings such as so still exist the crucible utilization ratio low, power consumption is high, and the consumption worker is many.
The purpose of this utility model is to design a kind of device and technology thereof for the monocrystalline continuous growth and invests to improve the saving of crucible utilization ratio, saves energy consumption, raises labour productivity.
Principal feature of the present utility model is crystal pulling and annealing are integrated.Promptly carry out, realize continuous growth from input, intensification, crystal pulling, annealing, cooling and the continuous circulation of crystalline output of raw material.
The monocrystalline continuous growing device is made up of crystal pulling furnace (7), annealing furnace (8), crystal Transport Machinery and temperature-control device.Crystal pulling furnace (7) can be a double end, and two crucibles promptly are set, and also can be bull, and a plurality of crucibles promptly are set.Annealing furnace is a partition type, whole device can be the structure of Fig. 2, is divided into four each districts and controls its temperature with temperature-control device respectively, makes the I district be in the crystal pulling temperature, the II district is in annealing temperature, and the III district reduces to 200 ℃ from annealing temperature and changes to room temperature.When the heat insulation plug of opening between adjacent two districts (11), the control of the temperature on both sides is identical, and is continuous to guarantee temperature.The annealed zone also can be designed as cellar for storing things, half tunnel formula, promptly removes heat insulation plug (11-1), (11-2), (11-3) in Fig. 2, and making the permanent control of whole annealing furnace temperature II district is annealing temperature.The IV district is a room temperature, and wherein temperature changes continuously.The size in each district can be decided according to the length and the quantity of institute's growing crystal.Crystalline shift to adopt mechanism control, and accomplish as required can be only feasible.
Raw material joins in the platinum alloy crucible (12) by charge cavity (14), carry out the crystalline growth, after crystal growth finishes, open heat insulation plug (11-1), make crystal enter the II district, put crystal in (13-3), (13-4) locate, close heat insulation plug (11-1), at this moment crystal pulling furnace (7) but in continuous charging, carry out crystal pulling.After crystal annealing finishes, open heat insulation plug (11-2), crystal enters the III district, puts crystal and locates in (13-5), (13-6), makes the crystal cooling.Open heat insulation plug (11-3) after cooling finishes, make crystal enter the IV district, put crystal, (13-8) locate, handle at last in (13-7).Dispose, open heat insulation plug (11-4), go out crystalline substance.When crystalline II district enters the III district, when entering the IV district by the III district, there is crystal to enter the II district again from the I district, enter the III district by the II district, the rest may be inferred, constantly carry out crystal pulling and heat transfer, crystal is suitable for reading along crystal transfer device track together with brilliant rotary device (13-1), (13-2) etc. when shifting, and moves by the direction of arrow among Fig. 2 (b).Moving can be hand push, also can be electronic drawing.Said process has been realized crystal continuous growth one by one.
The used temperature controlling system of this device is PID and program control instrument, adjusts according to the requirement of institute's growing crystal, carries out automatic control again.
Travelled in orbit by the rail car in the position that crystal shifts, rail car lower end is associated with the brilliant motor that changes, and the rail car drives the crystal translation like this.And crystal has rotation simultaneously, and when each warm area of crystal process, heat insulation plug is opened afterwards earlier and closed.
The utility model is compared with common method for monocrystal growth and equipment, has the utilization ratio of effective raising crucible, can reach 100-115%, saves a large amount of investment and energy consumption, also raises labour productivity about 1～1.5 times simultaneously.
Fig. 1 is a block diagram of the present utility model.(1) is the input of raw material among the figure, and (2) are crystal pulling, and (3) are annealing, and (4) are cooling, and (5) are crystal output, and (6) are temperature-control device.
Fig. 2 is a structure iron of the present utility model.Fig. 2 (a) is a vertical view of the present utility model, and Fig. 2 (b) is a front view of the present utility model.Each composition is respectively: (7) crystal pulling furnace, (8) annealing furnace, (9) cooling stove, (10) Hou Wenlu, (11-1), (11-2), (13-3), (11-4) heat insulation plug, (12-1), (12-2) platinum alloy crucible, (13-1)～(13-8) crystal, (14-1), (14-2) charge cavity, (15-1)～(15-8) the brilliant motor that changes, (16-1)～(16-8) rail car, (17) track, (18) support bar.
Claims (5)
1, a kind of device that adopts platinum matter crucible pulling single crystal is characterized in that it by crystal pulling furnace (7), annealing furnace (8), cooling area (9), (10), crystal Transport Machinery system (15), (16), (17), (18), heat insulation plug 11-1,11-2,11-3,11-4, temperature-control device constitutes.
2, by the described device of claim 1, it is characterized in that this device by four district's I, II, III, IV is formed, and adjacent areas at different levels are respectively by heat insulation plug 11-1,11-2,11-3,11-4 connection.
3,, it is characterized in that the temperature control system control that each temperature of distinguishing is made up of PID and program control instrument by the described device of claim 1.
4, by the described device of claim 1, it is characterized in that the crystal pulling furnace of this device can be settled one or more crucibles (12), and corresponding, one or more filling tubes (14) can be arranged.
5, according to the described device of claim 2 to 4, the crystalline substance favourable turn tool operating device that it is characterized in that this device is to finish crystalline to shift on track (17), and accomplish as required can be only feasible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 86200234 CN86200234U (en) | 1986-01-31 | 1986-01-31 | Device for single crystal continue growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 86200234 CN86200234U (en) | 1986-01-31 | 1986-01-31 | Device for single crystal continue growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN86200234U true CN86200234U (en) | 1986-10-22 |
Family
ID=4804302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 86200234 Ceased CN86200234U (en) | 1986-01-31 | 1986-01-31 | Device for single crystal continue growth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN86200234U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103898598A (en) * | 2012-12-29 | 2014-07-02 | 富泰华精密电子（郑州）有限公司 | Crystal growing device |
-
1986
- 1986-01-31 CN CN 86200234 patent/CN86200234U/en not_active Ceased
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103898598A (en) * | 2012-12-29 | 2014-07-02 | 富泰华精密电子（郑州）有限公司 | Crystal growing device |
| US20140182512A1 (en) * | 2012-12-29 | 2014-07-03 | Hon Hai Precision Industry Co., Ltd. | Crystal growth apparatus |
| CN103898598B (en) * | 2012-12-29 | 2016-08-10 | 富泰华精密电子（郑州）有限公司 | Crystal growing apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CE01 | Termination of patent right |
Termination date: 19870506 |
|
| CE01 | Termination of patent right |