CN2935471Y - 双芯片封装件 - Google Patents

双芯片封装件 Download PDF

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CN2935471Y
CN2935471Y CNU2006200794416U CN200620079441U CN2935471Y CN 2935471 Y CN2935471 Y CN 2935471Y CN U2006200794416 U CNU2006200794416 U CN U2006200794416U CN 200620079441 U CN200620079441 U CN 200620079441U CN 2935471 Y CN2935471 Y CN 2935471Y
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lead frame
pin
binding material
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conduction band
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郭小伟
慕蔚
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Tianshui Huatian Technology Co Ltd
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
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Abstract

本实用新型公开了一种双芯片封装件，以解决现有芯片封装的锂电池保护电路结构存在的使用较粗压焊金线，生产成本较高的问题。它包括引线框架内引脚、引线框架载体、粘结料、芯片、金线、塑封体、引线框架外引脚；引线框架载体通过粘结料与芯片相连，芯片上的栅极焊盘通过金线与引线框架内引脚相接；芯片上的源极焊盘上设有粘结料，引线框架内引脚上设有粘结料，铜导带跨接在引线框架内引脚和芯片上的粘结料之间，本实用新型在控制极PAD上压1根金线，其余用铜导带来代替通用封装的5根φ50μm金线，既满足工艺和产品性能要求，又可节约大量金线，降低封装成本，提高工作产品封装利润率。

Description

双芯片封装件
技术领域
本实用新型涉及一种芯片封装结构。
背景技术
9926电路是锂电源/池保护电路，主要用于锂电池充电放电的保护。而现代化的便携式通讯如手机、音频播放器(MP3、MP4、PAD、数码相机都离不开锂电池，所以SOP8L、SSOP8L封装的9926电路市场需求量很大。光手机全球每年增加量在1亿部以上。通常，IC9926芯片封装，采用双载体SOP8L、SSOP8L引线框架。双芯片粘结在第一引线框架载体和第二引线框架载体上，第二引线框架内引脚和第三引线框架内引脚相连，第六引线框架内引脚和第七引线框架内引脚相连。但其一颗产品上需要压10根φ50μm的金线，金线费用在封装总成本所占比例50％，严重影响了封装行业的利润空间。
实用新型内容
本实用新型的目的是提供一种双芯片封装件，以解决现有芯片封装的锂电池保护电路结构存在的使用较粗压焊金线，生产成本较高的问题。
本实用新型包括引线框架内引脚、第一引线框架载体、第二引线框架载体、第一粘结料、第二粘结料、第一芯片、第二芯片、第三金线、第四金线、塑封体、引线框架外引脚、引线框架外引脚；第二引线框架内引脚和第三引线框架内引脚相连，第六引线框架内引脚和第七引线框架内引脚相连，第一引线框架载体通过第一粘结料与第一芯片相连，第一芯片上的栅极焊盘通过第三金线与引线框架内引脚相接；第二引线框架载体通过第二粘结料与第二芯片相连，第二芯片上的栅极焊盘通过第四金线与引线框架内引脚相接；所述第一芯片上的源极焊盘上设有第三粘结料，第二引线框架内引脚和第三引线框架内引脚上设有第五粘结料，第一铜导带跨接在第三粘结料和第五粘结料上，第二芯片上的源极焊盘上设有第四粘结料，第六引线框架内引脚和第七引线框架内引脚上有第六粘结料，第二铜导带跨接在第四粘结料和第六粘结料上。
本实用新型为TOC(TAB ON CHIP)双芯片封装件，在控制极PAD上压1根金线，其余用铜导带来代替通用封装的5根φ50μm金线，既满足工艺和产品性能要求，又可节约大量金线，降低封装成本，提高工作产品封装利润率。
下面结合附图对本实用新型作进一步详细的说明。
附图说明
图1是现有双芯片封装件压焊图；
图2是现有双芯片封装件的结构示意图；
图3是本实用新型双芯片封装件压焊图；
图4是本实用新型第一种实施方式的双芯片封装件的结构示意图；
图5是本实用新型第二种实施方式的双芯片封装件的结构示意图。
具体实施方式
图1、图2示出了现有IC9926芯片封装结构，采用双载体SOP8L、SSOP8L引线框架。双芯片粘结在第一引线框架载体9和第二引线框架载体10上，第二引线框架内引脚2和第三引线框架内引脚3相连，第六引线框架内引脚6和第七引线框架内架引脚7相连。第一芯片13上5个控制极PAD通过压焊的5根金丝15与引线框架内引脚2、3相连，第二芯片14上的5个控制极PAD通过压焊的5根金丝16与引线框架内引脚6、7相连。
本实用新型包括引线框架内引脚、第一引线框架载体9、第二引线框架载体10、第一粘结料11、第二粘结料12、第一芯片13、第二芯片14、第三金线17、第四金线18、塑封体19、引线框架外引脚26、引线框架外引脚27；第二引线框架内引脚2和第三引线框架内引脚3相连，第六引线框架内引脚6和第七引线框架内引脚7相连；第一引线框架载体9通过第一粘结料11与第一芯片13相连，第一芯片13上的栅极焊盘通过第三金线17与引线框架内引脚4相接；第二引线框架载体10通过第二粘结料12与第二芯片14相连，第二芯片14上的栅极焊盘通过第四金线18与引线框架内引脚5相接；第一芯片13上的源极焊盘上设有第三粘结料22，第二引线框架内引脚2和第三引线框架内引脚3上设有第五粘结料24，第一铜导带20跨接在第三粘结料22和第五粘结料24上，形成信号通道，代替了普通封装的5根φ50μm金丝；第二芯片14上的源极焊盘上设有第四粘结料23，第六引线框架内引脚6和第七引线框架内引脚7上有第六粘结料25，第二铜导带21跨接在第四粘结料23和第六粘结料25上，形成电路的信号通道。第一铜导带20、第三金线17、第二铜导带21和第四金线18共同构成了电路的信号通道。
粘结料为导电胶或软焊料。
铜导带材料为铜、合金铜或镀银铜，第一铜导带20和21分别替代了通用型封装的5根φ50μm金线，因此可节约封装成本50％。
在图4所述的本实用新型第一种实施方式中第一铜导带20和第二铜导带21的形状为一字形。
在图5所述的本实用新型第二种实施方式中第一铜导带20和第二铜导带21的形状为凸形。
引线框架载体、粘结料、芯片、金线、铜导带、引线框架内引脚周围被塑封体19包围成一个整体。

Claims (7)

1、一种双芯片封装件，包括引线框架内引脚、第一引线框架载体、第二引线框架载体、第一粘结料、第二粘结料、第一芯片、第二芯片、第三金线、第四金线、塑封体、引线框架外引脚、引线框架外引脚；第二引线框架内引脚和第三引线框架内引脚相连，第六引线框架内引脚和第七引线框架内引脚相连，第一引线框架载体通过第一粘结料与第一芯片相连，第一芯片上的栅极焊盘通过第三金线与引线框架内引脚相接；第二引线框架载体通过第二粘结料与第二芯片相连，第二芯片上的栅极焊盘通过第四金线与引线框架内引脚相接；其特征在于：所述第一芯片(13)上的源极焊盘上设有第三粘结料(22)，第二引线框架内引脚(2)和第三引线框架内引脚(3)上设有第五粘结料(24)，第一铜导带(20)跨接在第三粘结料(22)和第五粘结料(24)上；第二芯片(14)上的源极焊盘上设有第四粘结料(23)，第六引线框架内引脚(6)和第七引线框架内引脚(7)上有第六粘结料(25)，第二铜导带(21)跨接在第四粘结料(23)和第六粘结料(25)上。
2、根据权利要求1所述的双芯片封装件，其特征在于：所述粘结料为导电胶。
3、根据权利要求1或2所述的双芯片封装件，其特征在于：所述粘结料为软焊料。
4、根据权利要求3所述的双芯片封装件，其特征在于：所述第一铜导带(20)和第二铜导带(21)的形状为一字形。
5、根据权利要求4所述的双芯片封装件，其特征在于：引线框架载体、粘结料、芯片、金线、铜导带、引线框架内引脚周围被塑封体(19)包围成一个整体。
6、根据权利要求3所述的双芯片封装件，其特征在于：所述第一铜导带(20)和第二铜导带(21)的形状为凸形。
7、根据权利要求6所述的双芯片封装件，其特征在于：引线框架载体、粘结料、芯片、金线、铜导带、引线框架内引脚周围被塑封体(19)包围成一个整体。
CNU2006200794416U 2006-07-18 2006-07-18 双芯片封装件 Expired - Lifetime CN2935471Y (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102074540A (zh) * 2010-11-26 2011-05-25 天水华天科技股份有限公司 矩阵式dip引线框架、该框架的ic封装件及其生产方法
CN104347566A (zh) * 2013-07-23 2015-02-11 西安永电电气有限责任公司 一种塑封式ipm驱动保护电路结构
CN104900620A (zh) * 2014-03-03 2015-09-09 西安永电电气有限责任公司 一种塑封式ipm的pcb板固定结构及其固定方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102074540A (zh) * 2010-11-26 2011-05-25 天水华天科技股份有限公司 矩阵式dip引线框架、该框架的ic封装件及其生产方法
CN102074540B (zh) * 2010-11-26 2013-01-09 天水华天科技股份有限公司 矩阵式dip引线框架、该框架的ic封装件及其生产方法
CN104347566A (zh) * 2013-07-23 2015-02-11 西安永电电气有限责任公司 一种塑封式ipm驱动保护电路结构
CN104900620A (zh) * 2014-03-03 2015-09-09 西安永电电气有限责任公司 一种塑封式ipm的pcb板固定结构及其固定方法

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