CN2904302Y - U槽led集成芯片 - Google Patents

U槽led集成芯片 Download PDF

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CN2904302Y
CN2904302Y CNU2006200591337U CN200620059133U CN2904302Y CN 2904302 Y CN2904302 Y CN 2904302Y CN U2006200591337 U CNU2006200591337 U CN U2006200591337U CN 200620059133 U CN200620059133 U CN 200620059133U CN 2904302 Y CN2904302 Y CN 2904302Y
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silicon substrate
led bare
metal level
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吴纬国
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Guangzhou Nanker Integrated Electronic Co Ltd
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Abstract

本实用新型公开了一种制造成本低、发光效率高、散热效果好的U槽LED集成芯片。本实用新型包括若干个LED裸芯片和硅衬底，LED裸芯片包括N型外延层、P型外延层，硅衬底顶面于所述LED裸芯片处有两个金属层，两个外延层通过焊球或金属线焊接在金属层上，金属层与硅衬底的结合区还有两个隔离层I，硅衬底上表面有若干个U型凹槽，LED裸芯片位于凹槽内，LED裸芯片之间通过金属层相连接并引出阳、阴极接点，凹槽内有填充树脂，金属层覆盖于凹槽的底面和侧面且外表面为反光面，金属层与硅衬底之间有隔离层II。本实用新型可广泛应用于LED领域。

Description

U槽LED集成芯片
                        技术领域
本实用新型涉及一种U槽LED集成芯片。
                        背景技术
倒装芯片技术是当今最先进的微电子封装技术之一，它既是一种芯片互连技术，又是一种理想的芯片粘接技术，它将电路组装密度提升到了一个新的高度。在所有表面安装技术中，倒装芯片可以达到最小、最薄的封装，随着电子产品体积的进一步缩小，倒装芯片的应用将会越来越广泛。
将LED裸芯片倒扣在硅衬底上的封装形式称为倒装LED。传统的倒装LED为平面型结构，如图1所示，它包括LED裸芯片和硅衬底2，所述LED裸芯片由衬底10和N型外延层11、P型外延层12组成，所述硅衬底2顶面有两个分离的沉积金属层30、31，所述P型外延层12、所述N型外延层11分别通过焊球40、41焊接在所述金属层30、31上，所述金属层30、31与所述硅衬底2的结合区分别还有一个与所述硅衬底2极性相反的隔离层20、21，用于隔离所述金属层30、31与所述硅衬底2，起到保护的作用。这种传统的倒装LED的PN结在正面、侧面和底面上均会发光，但是由于侧面及底面发出的光都被散射出去，因而没有被充分利用，造成LED的发光效率较低，使得正面出光的强度降低。
正装芯片技术是传统的微电子封装技术，其技术成熟，应用范围最广泛。目前绝大多数LED均为正装LED，LED裸芯片正装在一个带有反射杯的支架上，其P型外延层、N型外延层分别通过金属线焊接在阳极和阴极引线上，这种正装LED虽然有反射杯，可反射侧面的光使其从正面射出，但是效果仍然不够好，正面出光会被金属焊线遮蔽，如衬底为绝热材料时，其散热性差。同时，这种正装LED较难实现多芯片集成。
现有的功率型LED芯片都是采用一个LED裸芯片，其制造成本较高，且发光效率较低；其所有热量都是通过若干个焊球或焊线传导散热，由于芯片面积较大，热源集中，因此散热效果不好。
                      实用新型内容
本实用新型所要解决的技术问题是克服现有技术上的不足，提供一种制造成本低、发光效率高、散热效果好的U槽LED集成芯片。
本实用新型所采用的技术方案是：本实用新型包括若干个LED裸芯片和硅衬底，所述LED裸芯片包括衬底和N型外延层、P型外延层，所述硅衬底顶面于每个所述LED裸芯片处有两个分离的沉积金属层，所述P型外延层、所述N型外延层分别通过焊球倒装或通过金属线正装焊接在所述金属层上，所述金属层与所述硅衬底的结合区分别还有一个掺杂的隔离层I，所述硅衬底上表面有若干个U型凹槽，若干个所述LED裸芯片对应位于若干个所述U型凹槽内，若干个所述LED裸芯片之间通过所述金属层相连接并引出阳极接点和阴极接点，所述U型凹槽内有透明绝缘的填充树脂，所述金属层覆盖于各所述U型凹槽的底面和侧面，所述金属层的外表面为反光面，各所述LED裸芯片对应的所述金属层与所述硅衬底之间设有隔离层II。
若干个所述LED裸芯片之间并联或串联或串并联组合连接。
所述硅衬底为<100>晶向的硅衬底，所述U型凹槽为四棱台体形状，所述U型凹槽的各侧面与所述硅衬底顶面之间的夹角均为54.7°。
本实用新型还包括保护层，所述保护层覆盖于所述金属层外表面。
所述硅衬底为P型或N型，所述隔离层I与所述硅衬底极性相反，所述填充树脂内混有荧光粉，所述焊球为金球栓或铜球栓或锡球，所述金属线为金线或铝线或铜线，所述金属层为金属铝或硅铝合金。
本实用新型的有益效果是：由于本实用新型所述硅衬底上表面有若干个U型凹槽，若干个所述LED裸芯片对应位于若干个所述U型凹槽内，所述金属层覆盖于所述U型凹槽的底面和侧面，所述LED裸芯片的PN结在侧面和底面发出的光线遇到所述凹槽的侧面和底面覆盖的所述金属层会发生反射，反射的光线又从正面射出，这样，无论是从PN结的正面、底面还是侧面发出的光都得到了有效利用，不会造成侧面及底面光的浪费，提高了发光效率，故本实用新型发光效率高、正面出光强度高；由于本实用新型若干个所述LED裸芯片之间通过所述金属层相连接并引出阳极接点和阴极接点，多个所述LED裸芯片分布面积广，发光效果更好，且制造成本比采用一个LED裸芯片的功率型LED芯片更低，每个所述LED裸芯片通过与其相接的两个所述焊球或金属焊线将热量传到所述金属层，并通过所述隔离层将热量传给所述硅衬底，所述金属层的面积较大，覆盖了所述U型凹槽的底面和侧面，热源较分散，散热效果好，使用寿命长，故本实用新型发光效率高、散热效果好、使用寿命长。
                        附图说明
图1是传统倒装LED集成芯片的结构示意图；
图2是本实用新型实施例一的平面布置结构示意图；
图3是图2所示U槽LED集成芯片的电路原理图；
图4是本实用新型实施例二的平面布置结构示意图；
图5是图4所示U槽LED集成芯片的电路原理图；
图6是本实用新型实施例三的平面布置结构示意图；
图7是图6所示U槽LED集成芯片的电路原理图；
图8是本实用新型实施例四的平面布置结构示意图；
图9是图8所示U槽LED集成芯片的电路原理图；
图10是图2、图4、图6、图8所示U槽倒装LED集成芯片的A-A剖面结构示意图；
图11是图2、图4、图6、图8所示U槽正装LED集成芯片的A-A剖面结构示意图。
                       体实施方式
实施例一：
如图2、图3、图10所示，本实施例的U槽倒装LED集成芯片包括九个LED裸芯片1和硅衬底2，所述LED裸芯片1包括蓝宝石(Al2O3)衬底10和氮化镓(GaN)N型外延层11、P型外延层12，当然，所述衬底10也可以为碳化硅(SiC)等其他材料的衬底，所述硅衬底2为<100>晶向的P型硅衬底，所述硅衬底2上表面有九个U型凹槽，各所述LED裸芯片1分别位于各所述U型凹槽内。所述硅衬底2顶面于每个所述LED裸芯片1处有两个分离的沉积金属层32、33，所述金属层32、33为金属铝，当然也可以采用硅铝合金，所述金属层32、33覆盖于所述U型凹槽的底面和侧面，所述金属层32、33的外表面为反光面，所述金属层32、33既是电极又是侧面及底面光线的反光体，所述P型外延层12、所述N型外延层11分别通过焊球40、41倒装焊接在所述金属层32、33上，所述焊球40、41为金球栓，当然也可以为铜球栓或锡球，所述金属层32、33与所述硅衬底2的结合区分别还有一个掺杂磷、砷等材料的N型隔离层I 22、23，用于隔离所述金属层32、33与所述硅衬底2，防止所述金属层32、33之间漏电或短路，同时所述隔离层I 22、23与所述硅衬底2之间也构成一个静电保护二极管，也可起到在封装过程中静电保护的作用，同时所述隔离层22、23将所述LED裸芯片1传给所述金属层32、33的热量再传递给所述硅衬底2，起到良好的导热、散热作用。所述U型凹槽内有透明绝缘的填充树脂7，所述填充树脂7内混有荧光粉，所述LED裸芯片1经所述蓝宝石衬底10发出的蓝色光激励所述荧光粉发出黄色光，两种颜色的光混合，最终向外发出白色光，所述金属层32、33与所述硅衬底2之间各有一个隔离层II 51、53，所述金属层32、33之间还有一个工艺过程中形成的隔离层II 52。所述U槽倒装LED集成芯片还包括保护层6，所述保护层6覆盖于所述金属层32、33外表面，以防止所述金属层32、33短路，所述保护层6采用二氧化硅(SiO2)材料，当然也可以采用氮化硅(SiN)等其他材料。所述U型凹槽为正四棱台体形状，所述U型凹槽的侧面与所述硅衬底2顶面之间的夹角为54.7°，当然所述U型凹槽也可以为上、下底面为矩形的四棱台体形状。当然，所述硅衬底2也可以为<100>晶向的N型硅衬底，此时，所述隔离层I 22、23为掺杂硼等材料的P型隔离层。各所述LED裸芯片1之间通过所述金属层32、33相并联连接并引出阳极接点80和阴极接点81，即所述阳极接点80和所述阴极接点81之间的所有LED裸芯片1相并联。
实施例二：
如图4、图5、图10所示，本实施例与实施例一的不同之处在于：各所述LED裸芯片1之间通过所述金属层32、33的连接方式——本实施例各所述LED裸芯片1之间相串联连接，即所述阳极接点80和所述阴极接点81之间的所有LED裸芯片1相串联。其余与实施例一相同。
实施例三：
如图6、图7、图10所示，本实施例与实施例一的不同之处在于：各所述LED裸芯片1之间通过所述金属层32、33的连接方式——本实施例各所述LED裸芯片1之间先每三个串联成一组，再将三组相并联连接。其余与实施例一相同。
实施例四：
如图8、图9、图10所示，本实施例与实施例一的不同之处在于：各所述LED裸芯片1之间通过所述金属层32、33的连接方式——本实施例各所述LED裸芯片1之间先每三个并联成一组，再将三组相串联连接。其余与实施例一相同。
实施例五：
如图2～图9、图11所示，本实施例与实施例一～四的不同之处在于：本实施例的U槽LED集成芯片的各所述LED裸芯片1为正装封装型式，用银胶9将LED裸芯片1正装在所述U型凹槽的底部，再将连接LED裸芯片1的所述P型外延层12、所述N型外延层11焊点的所述金属线45、46焊接于保护层的两个开口内的所述金属层32、33上，所述金属线45、46为金线，当然也可以为铝线或铜线；各所述LED裸芯片1之间通过所述金属层32、33的连接方式为串联或并联或串并联组合连接；所述隔离层II由氧化层54、55、56、57和氮化硅层84、85、86、87组成。
本实用新型所述LED裸芯片1及所述U型凹槽的数量不限于九个，实施例中仅是举例说明。
本实用新型将若干个所述LED裸芯片1集成在一个所述硅衬底2上，发光效率高，散热效果好，使用寿命长。
本实用新型可广泛应用于LED领域。

Claims (5)

1、一种U槽LED集成芯片，包括若干个LED裸芯片(1)和硅衬底(2)，所述LED裸芯片包括衬底(10)和N型外延层(11)、P型外延层(12)，所述硅衬底(2)顶面于每个所述LED裸芯片处有两个分离的沉积金属层(32、33)，所述P型外延层(12)、所述N型外延层(11)分别通过焊球(40、41)倒装或通过金属线(45、46)正装焊接在所述金属层(32、33)上，所述金属层(32、33)与所述硅衬底(2)的结合区分别还有一个掺杂的隔离层I(22、23)，其特征在于：所述硅衬底(2)上表面有若干个U型凹槽，若干个所述LED裸芯片对应位于若干个所述U型凹槽内，若干个所述LED裸芯片之间通过所述金属层(32、33)相连接并引出阳极接点(80)和阴极接点(81)，所述U型凹槽内有透明绝缘的填充树脂(7)，所述金属层(32、33)覆盖于各所述U型凹槽的底面和侧面，所述金属层(32、33)的外表面为反光面，各所述LED裸芯片对应的所述金属层(32、33)与所述硅衬底(2)之间设有隔离层II。
2、根据权利要求1所述的U槽LED集成芯片，其特征在于：若干个所述LED裸芯片之间并联或串联或串并联组合连接。
3、根据权利要求1或2所述的U槽LED集成芯片，其特征在于：所述硅衬底(2)为<100>晶向的硅衬底，所述U型凹槽为四棱台体形状，所述U型凹槽的各侧面与所述硅衬底(2)顶面之间的夹角均为54.7°。
4、根据权利要求1或2所述的U槽LED集成芯片，其特征在于：它还包括保护层(6)，所述保护层(6)覆盖于所述金属层(32、33)外表面。
5、根据权利要求1或2所述的U槽LED集成芯片，其特征在于：所述硅衬底(2)为P型或N型，所述隔离层I(22、23)与所述硅衬底(2)极性相反，所述填充树脂(7)内混有荧光粉，所述焊球(40、41)为金球栓或铜球栓或锡球，所述金属线(45、46)为金线或铝线或铜线，所述金属层(32、33)为金属铝或硅铝合金。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100392855C (zh) * 2006-05-19 2008-06-04 广州南科集成电子有限公司 U槽led集成芯片及制造方法
CN102468318A (zh) * 2010-11-04 2012-05-23 上海蓝光科技有限公司 一种高压直流发光二极管芯片结构及其制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100392855C (zh) * 2006-05-19 2008-06-04 广州南科集成电子有限公司 U槽led集成芯片及制造方法
CN102468318A (zh) * 2010-11-04 2012-05-23 上海蓝光科技有限公司 一种高压直流发光二极管芯片结构及其制造方法

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