CN2879426Y - Modular LED and packaging structure thereof - Google Patents

Modular LED and packaging structure thereof Download PDF

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Publication number
CN2879426Y
CN2879426Y CNU2006200041661U CN200620004166U CN2879426Y CN 2879426 Y CN2879426 Y CN 2879426Y CN U2006200041661 U CNU2006200041661 U CN U2006200041661U CN 200620004166 U CN200620004166 U CN 200620004166U CN 2879426 Y CN2879426 Y CN 2879426Y
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CN
China
Prior art keywords
led
heating column
heat
emitting diode
modularized limit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNU2006200041661U
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Chinese (zh)
Inventor
董经文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GUANGJIA PHOTOELECTRIC CO Ltd
Huga Optotech Inc
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GUANGJIA PHOTOELECTRIC CO Ltd
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Priority to CNU2006200041661U priority Critical patent/CN2879426Y/en
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Publication of CN2879426Y publication Critical patent/CN2879426Y/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Led Device Packages (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)

Abstract

The utility model discloses a modularized LED which modularizes an LED structure to be convenient to detach and mount and has a high heat sink efficiency, and a packaging structure thereof. The modularized LED packaging structure of the utility model comprises a heat conductive substrate which is provided with a via hole at an advance packaging position; and an LED module including an LED grain and a heat conductive column which is connected with the LED grain by a connection layer, the LED module enables the heat generated by the LED module to be directly transmitted to the heat conductive substrate to perform heat sink by inserting the provided heat conductive column into and attaching the heat conductive column to the via hole of the conductive substrate, and can replace the LED module solely.

Description

A kind of modularized limit emitting diode (LED) and encapsulating structure thereof
Technical field
The utility model relates to a kind of LED encapsulating structure, especially about a kind of with the LED structural module with easy disassembly, and have the modularized limit emitting diode (LED) and the encapsulating structure thereof of high cooling efficiency simultaneously.
Background technology
Led light source is owing to have characteristics such as volume is little, power consumption is low, long service life, in a foreseeable future, can replace the light emitting source of lighting apparatus such as present bulb or fluorescent lamp source or other display unit, and become most important light-emitting component.Yet, for improving the overall brightness of light emitting source, certainly will to improve luminous power or increase number or the density that LED is provided with, the quantity of heat production of led light source will significantly be increased but so be provided with, if these heats can't be derived as early as possible, to have a strong impact on the luminosity of LED, quicken the degradation of LED simultaneously and reduction of service life.
Referring to Fig. 1, this figure is the schematic diagram of existing LED encapsulating structure.Among the figure, LED 10 directly is installed on the printed circuit board (PCB) 20, and it also is provided with one first electrode 11 and one second electrode 12, and electrically connects by set wire pad 23 on a call wire 24 and the printed circuit board (PCB) 20 respectively.Because printed circuit board (PCB) 20 heat-conducting effect are not good, therefore in the prior art on printed circuit board (PCB) 20 LED 10 encapsulation place offer a perforation 21, and in perforation 21, load with high heat-conducting medium 22, the heat that is produced by LED 10 can be emitted in printed circuit board (PCB) 20 and the air to increase radiating efficiency by the conduction of high heat-conducting medium 22.Yet owing to need leave the space that LED 10 sticks together on the printed circuit board (PCB) 20,21 bores that can offer of therefore boring a hole are limited, make high heat-conducting medium 22 also be restricted with LED 10 contacted areas, thereby can't effectively promote its heat transfer efficiency.In addition, high heat-conducting medium 22 was because of being filled afterwards or sticked together contact, its heat-conducting effect and not as common metal, so its radiating effect also is limited.
On the other hand, normally directly be attached on the base plate for packaging when having the LED die package now, or stick together on a cup whole again sticking together earlier and be fixed on the base plate for packaging, therefore when this LED breaks down, can't easily it be taken off replacing, thereby must change the led light source of whole base plate sometimes, make it quite high on maintenance, use cost, and when it is used in the light source that general domestic lighting uses, for the user, also quite uneconomical and be not easy to maintenance.
Summary of the invention
For improving the shortcoming of existing LED encapsulating structure poor heat radiation, the LED that breaks down can be changed separately, the utility model will provide a kind of modularized limit emitting diode (LED) structure with led moduleization, to establish when encapsulation more convenient connecing to make this LED crystal grain, and in the time must changing, also can easily LED be pulled up displacement in the mode of similar replacing bulb by the user, and the maintenance cost of this led light source equipment is significantly reduced.On the other hand, the encapsulating structure that cooperates heat-conducting substrate by the utility model modularized limit emitting diode (LED), the high heat that LED crystal grain is produced, see through the eutectic layer (eutecticlayer) of low thermal impedance rapidly, conduct on the heat-conducting substrate by heating column, and significantly promote the radiating efficiency of LED, prolong its useful life simultaneously and keep its due brightness for a long time.
Modularized limit emitting diode (LED) structure of the present utility model comprises: a LED crystal grain; One heating column, the upper surface of this heating column are junction surfaces; And an articulamentum, this articulamentum is connected this LED crystal grain and constitutes a LED module with this heating column.Wherein, this articulamentum can be a crystal layer or an adhesion layer altogether, or other any materials that this LED crystal grain can be connected with this heating column.The junction surface area of this heating column equals the area of this LED crystal grain bottom at least, then can be provided with a screw thread on the one side join.This heating column can pass through the hollow out of one bottom indent simultaneously, and increases the area that contacts with air, thereby promotes radiating efficiency, but the structure indent of hollow out forms a cylinder space, but not as limit.In addition, this heating column is to be made by aluminium or copper metal, but is not limited in this, and any material with high thermal conductivity can.
On the other hand, modularized limit emitting diode (LED) encapsulating structure of the present utility model comprises: a heat-conducting substrate, and this heat-conducting substrate is provided with a perforation in predetermined encapsulation place; An and led module as the aforementioned, this led module plugs by its set this heating column and is close in set this perforation of this heat-conducting substrate, the heat that this led module is produced can be directly conducted to this heat-conducting substrate and dispel the heat, and can replace led module separately.Wherein, this heat-conducting substrate can be the substrate of aluminium sheet, copper coin or other high thermal conductivity, does not do special restriction at this.
Below conjunction with figs. is further specified execution mode of the present utility model; following cited embodiment is used for illustrating the utility model; be not to be used for limiting scope of the present utility model; anyly be familiar with those skilled in the art; in not breaking away from spirit and scope of the present utility model; can make some variations or retouching, therefore protection range of the present utility model should be as the criterion with the protection range of claim.
Description of drawings
Fig. 1 is the schematic diagram of prior art;
Fig. 2 is the schematic diagram of the utility model embodiment led module;
Fig. 3 is the joint schematic diagram of the utility model embodiment led module;
Fig. 4 is the schematic diagram that another led module of the utility model embodiment engages;
Fig. 5 is the schematic diagram of the utility model embodiment modularized limit emitting diode (LED) encapsulating structure;
Fig. 6 is the schematic diagram of the utility model modularized limit emitting diode (LED) encapsulating structure second embodiment;
Fig. 7 is the schematic diagram of the utility model led module second embodiment;
Fig. 8 is the schematic diagram of the utility model led module the 3rd embodiment;
Fig. 9 is the schematic diagram of the utility model led module the 4th embodiment.
Embodiment
Referring to Fig. 2, this figure is the schematic diagram of the utility model embodiment led module.Modularized limit emitting diode (LED) structure of the present utility model comprises: a LED crystal grain 31, altogether a crystal layer 32 and a heating column 33.Eutectic layer 32 is formed between LED crystal grain 31 and the heating column 33, is with aforementioned the two articulamentum that is connected and constitutes a led module 30 to organize.
Please continue referring to Fig. 2, LED crystal grain 31 comprises one first electrode 311 and one second electrode 312.On general gallium nitride (GaN) LED crystal grain, first electrode 311 can become P type electrode with the electric connection of P type gallium nitride (P-GaN) layer, second electrode 312 then can become N type electrode with the electric connection of n type gallium nitride (n+GaN) layer, electrode setting mode only as demonstration, is not to only limit to above-mentioned mode at this.
Heating column 33 is column structure, comprises a junction surface 331, a bottom 332 and a side join 333.Heating column 33 engages with LED crystal grain 31 eutectics by its junction surface 331, the size of heating column 33 external diameters or junction surface 331 areas is also without particular limitation, its can less than, be equal to or greater than the area of LED crystal grain 31 bottoms, but with person's of being equal to or greater than (seeing also Fig. 8) is preferable, the heat production of LED crystal grain 31 could be conducted with maximum area, thereby increase its heat transfer efficiency.Side join 333 is provided with screw thread 334 in the present embodiment, and it also can be a smooth flat, or other can be inserted in the structure form of perforation 41 (seeing also Fig. 5).Heating column 33 can ((385W/m * K) metal be made, but is not limited in this, and any other material with high thermal conductivity all can for 231W/m * K) or copper by the aluminium of high thermal conductivity coefficient.In addition, heating column 33 can have a hollow out 34 (seeing also Fig. 7) by its bottom 332 indents simultaneously, and increase the area that contacts with air with this, and promote radiating efficiency, but the structure indent of hollow out 34 forms a cylinder space, but not as limit.
Please be simultaneously referring to Fig. 3,4, be the joint schematic diagram of the utility model embodiment led module.LED crystal grain 31 can plate one deck Gold plated Layer 321 on 331 surfaces, heating column 33 junction surfaces with before heating column 33 engages, and then carries out eutectic with LED crystal grain 31 under proper temperature again and engages, and forms a led module 30.Its also can prepare one with junction surface 331 or the similar gold plaque 322 of LED crystal grain 31 bottom areas, be located in and carry out eutectic behind LED crystal grain 31 and the junction surface 331 and engage, can form so-called eutectic layer 32 (seeing also Fig. 2) in the led module 30 behind the eutectic joint.
The juncture of LED crystal grain 31 and heating column 33 except that aforesaid eutectic bond mode, can also engage by the viscose with high thermal conductivity coefficient.That is to say that aforesaid eutectic layer 32 also can be replaced (asking earlier referring to Fig. 9) by adhesion layer 35.Adhesion layer 35 can be copper glue, elargol or scolding tin, or is any mixing of previous materials, but is not limited in this.No matter be to engage with eutectic bond mode or viscose adhesive means, this articulamentum all is for preferable with high thermal conductivity person.
See also Fig. 5,6, be the schematic diagram of the utility model embodiment modularized limit emitting diode (LED) encapsulating structure.Be used in the substrate of led module 30 encapsulation among the utility model embodiment, it is not general existing tellite, but the heat-conducting substrate 40 of a tool high thermal conductivity, it can be aluminium sheet, copper coin or the aluminium nitride (plate of 320W/m * K) of high thermal conductivity coefficient, but, wherein under room temperature, can reach the above person of 100W/m * K) for preferable with conductive coefficient not as limit.
When heat-conducting substrate 40 is provided with, be to be provided with a perforation 41 in each led module 30 predetermined installing place.Perforation 41 dimensionss of being offered are setting that match of the configuration according to the heating column in the led module 30 33, make after led module 30 plugs in the future, and its heating column 33 side join 333 can have the bonding tightness of the best with perforation 41.In the present embodiment, for cooperation is provided with heating column 33 configurations of screw thread 334, perforation 41 also is provided with and this screw thread 334 corresponding screw threads 42, makes led module 30 can utilize the mode that is spirally connected to lock to screw tight close being incorporated into to be bored a hole in 41.If this LED crystal grain 31 damages to some extent in the future, then can separately led module 30 directly be screwed out and be changed, and need not together replace together with whole base plate, not only can increase the convenience of led light source maintenance, also can reduce the cost of maintenance of equipment and use simultaneously.On the other hand, because heating column 33 is that eutectic engages with LED crystal grain 31, so lower thermal impedance is arranged, so the heat that LED crystal grain 31 is produced can conduct to heating column 33 via eutectic layer 32 rapidly, conduct on the heat-conducting substrate 40 of fluid-tight engagement by heating column 33 again, so on whole heat transfer efficiency, also obtain significantly promoting effectively.
Heating column 33 utilizes conduction pattern dispels the heat except that aforementioned, its also can be simultaneously by with the contacting of air, utilize the mode of radiation or convection current to dispel the heat.At this moment, can form hollow out 34 in heating column 33 bottoms 332 place's indents as described above, it also can increase the length of heating column 33, protrude in connect outside the heat-conducting substrate of establishing 40, then expose and the air contact portion, also dispel the heat simultaneously, and can further promote whole rate of heat dispation.Except that the length that increases heating column 33, also can make heating column 33 be shorter than the thickness of heat-conducting substrate 40, though heating column 33 reduces its area of dissipation, near heating column 33 contacted heat-conducting substrates 40, and increase the area that it contacts with air, also have the effect that increases radiating efficiency.The length of aforementioned heating column 33 is not provided with special restriction, can be according to the conductive coefficient of heating column 33, heat-conducting substrate 40 materials, and the thickness of the sectional area of heating column 33 or heat-conducting substrate 40 cooperates and adjusts, and makes best radiating effect.
In addition, if heat-conducting substrate 40 tool conductivity then need to form an insulating barrier 43 in these heat-conducting substrate 40 surperficial presumptive areas, on insulating barrier 43, form a wire pad 44 again.After treating that led module 30 is inserted in perforation 41, again respectively by first electrode 311 and second electrode 312 of LED crystal grain 31, be bonded on the wire pad 44 with call wire 45, finishing electric connection, but the set-up mode that electrically connects with LED crystal grain 31 on the heat-conducting substrate 40 is not limited in aforementioned.

Claims (10)

1. modularized limit emitting diode (LED) structure is characterized in that comprising:
One LED crystal grain;
One heating column, the upper surface of this heating column are junction surfaces; And
One articulamentum, this articulamentum are this LED crystal grain is connected with this heating column and organizes and constitute a led module.
2. modularized limit emitting diode (LED) structure as claimed in claim 1 is characterized in that, described articulamentum is to have crystal layer altogether.
3. modularized limit emitting diode (LED) structure as claimed in claim 1 is characterized in that, described articulamentum is an adhesion layer.
4. modularized limit emitting diode (LED) structure as claimed in claim 3 is characterized in that, described adhesion layer is an elargol layer.
5. modularized limit emitting diode (LED) structure as claimed in claim 1 is characterized in that, described heating column further is provided with screw thread on its side surface.
6. modularized limit emitting diode (LED) structure as claimed in claim 1 is characterized in that, the junction surface area of described heating column equals the area of described LED crystal grain bottom at least.
7. as claim 1,2 or 3 described modularized limit emitting diode (LED) structures, it is characterized in that described heating column is made by aluminum metal.
8. modularized limit emitting diode (LED) encapsulating structure is characterized in that comprising:
One heat-conducting substrate, this heat-conducting substrate is provided with a perforation in predetermined encapsulation place; And
One led module as claimed in claim 1, this led module inserts and is close in the set described perforation of this heat-conducting substrate by its set heating column.
9. modularized limit emitting diode (LED) encapsulating structure as claimed in claim 8 is characterized in that, be provided with screw thread in the described perforation, and the side surface of described heating column also is provided with corresponding screw thread, by screw thread described heating column is spirally connected and is plugged in the described perforation.
10. modularized limit emitting diode (LED) encapsulating structure as claimed in claim 8 is characterized in that, described heat-conducting substrate is an aluminium sheet.
CNU2006200041661U 2006-03-03 2006-03-03 Modular LED and packaging structure thereof Expired - Lifetime CN2879426Y (en)

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Application Number Priority Date Filing Date Title
CNU2006200041661U CN2879426Y (en) 2006-03-03 2006-03-03 Modular LED and packaging structure thereof

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Application Number Priority Date Filing Date Title
CNU2006200041661U CN2879426Y (en) 2006-03-03 2006-03-03 Modular LED and packaging structure thereof

Publications (1)

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Country Link
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011140692A1 (en) * 2010-05-12 2011-11-17 珠海市荣盈电子科技有限公司 High thermal conductivity pcb and the making method thereof
CN102280569A (en) * 2011-08-22 2011-12-14 佛山市国星光电股份有限公司 High heat conducting substrate, light-emitting diode (LED) device and LED component
CN108475712A (en) * 2015-12-01 2018-08-31 夏普株式会社 Image formation component

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011140692A1 (en) * 2010-05-12 2011-11-17 珠海市荣盈电子科技有限公司 High thermal conductivity pcb and the making method thereof
CN102280569A (en) * 2011-08-22 2011-12-14 佛山市国星光电股份有限公司 High heat conducting substrate, light-emitting diode (LED) device and LED component
CN102280569B (en) * 2011-08-22 2013-10-30 佛山市国星光电股份有限公司 High heat conducting substrate, light-emitting diode (LED) device and LED component
CN108475712A (en) * 2015-12-01 2018-08-31 夏普株式会社 Image formation component

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CX01 Expiry of patent term

Granted publication date: 20070314

EXPY Termination of patent right or utility model