CN2867601Y - Organic luminous module - Google Patents
Organic luminous module Download PDFInfo
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- CN2867601Y CN2867601Y CN 200520145412 CN200520145412U CN2867601Y CN 2867601 Y CN2867601 Y CN 2867601Y CN 200520145412 CN200520145412 CN 200520145412 CN 200520145412 U CN200520145412 U CN 200520145412U CN 2867601 Y CN2867601 Y CN 2867601Y
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- transparent metal
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- composite anode
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Abstract
The utility model relates to an organic light emitting component. It sequentially comprises, from top to bottom, a substrate, a cathode, an organic layer, and a composite anode, wherein the composite anode includes a first transparent metal layer and a second transparent metal layer, the second transparent metal layer is disposed at another side of the metal layer the backing to the organic layer, and the second transparent metal layer is made of metal materials with very low specific resistance, its thickness is between 5-150.
Description
Technical field
The utility model is relevant with organic luminescent assembly, more detailed is meant a kind of organic luminescent assembly with composite anode structure.
Background technology
Organic luminescent assembly can be divided into two kinds of active and passive types according to its type of drive difference, and organic luminescent assembly to penetrate direction with its light different and can divide into bottom-emission assembly (bottom emission device), top light emitting assembly (top emission device) and double-side assembly (dual display device).The production method of each assembly has the branch of forward processing procedure and reverse processing procedure, and main differentiation place is to cause because of different of the order that is coated with negative electrode, organic layer and anode.
With Fig. 1, Fig. 2 is an example, the organic luminescent assembly that is all a kind of active driving that is disclosed, wherein the organic luminescent assembly 1 of Fig. 1 is to make through the forward processing procedure, that is its structure comprises a plurality of groups of substrates of thin-film transistor 1a from bottom to top in regular turn, one transparent anode 1b, an one organic layer 1c and a negative electrode 1d, it is the bottom-emission assembly that radiates bright dipping (represented as arrow) from edge of substrate that the light of this organic luminescent assembly 1 penetrates direction, but, be somebody's turn to do the organic luminescent assembly 1 that makes with the forward processing procedure, because of its plurality of groups of substrates of thin-film transistor 1a penetrates the thin-film transistor that is distributed with most meeting shadings on the direction at light, not only make aperture opening ratio reduce, cause beamy efficient to reduce relatively;
The organic luminescent assembly 2 of Fig. 2 then is to make via reverse processing procedure; its structure comprises a plurality of groups of substrates of thin-film transistor 2a from bottom to top in regular turn; one protective layer 2b; one negative electrode 2c; an one organic layer 2d and a transparent anode 2e; this organic luminescent assembly 2 is to be the top light emitting assembly; though the organic luminescent assembly 2 that makes with this reverse processing procedure does not have the shading influence of thin-film transistor and improves aperture opening ratio; but because of the making of its anode 2e behind organic layer 2d; if employing high temperature; the high power processing procedure is when making this anode 2e; though can obtain the transparent anode of compact structure and tool bottom surface resistance value characteristic; to reduce the driving voltage of organic luminescent assembly 2; but; high temperature; the high power processing procedure causes harmful effect to the low organic layer 2d of thermal endurance easily; therefore; anode 2e in the middle of reverse processing procedure makes; should select with low temperature; low power mode is made anode; be suitable at present with low temperature; material that uses in the low-power processing procedure such as indium-zinc oxide (IZO); yet; when making anode 2e with the indium-zinc oxide material; because of the restriction on its material behavior; make the face resistance value of anode 2e can't obtain effectively control reduction, certainly will cause the driving voltage of organic luminescent assembly 2 to rise.
Other sees also a kind of passive type that makes with reverse processing procedure shown in Figure 3 and drives organic luminescent assembly 3, its structure comprises a substrate 3a from bottom to top in regular turn, one negative electrode 3b, one electron transfer layer 3c, one light-emitting layer 3d, an one electric hole transmitting layer 3 e and a transparent anode 3f, aforementioned electronic transmitting layer 3 c, the promptly common organic layer that constitutes organic luminescent assembly 3 of light-emitting layer 3d and electric hole transmitting layer 3 e, this organic luminescent assembly 3 is similarly to take into account and avoids organic layer is caused harmful effect, selection is with low temperature, when the low-power thin film-forming method is made anode 3f, anode 3f is limited by the restriction of its constituent material, cause the uncontrollable reduction of face resistance value equally, cause the driving voltage of organic luminescent assembly 3 to rise relatively.
Because said circumstances, the present utility model people is based on excelsior spirit, and the long-pending research and development experience of being engaged in opto-electronics for many years, and generation of the present utility model is arranged eventually.
The utility model content
Main purpose of the present utility model is to provide a kind of organic luminescent assembly, and its anode is to be a composite construction, is able to low temperature, the making of lower powered thin film-forming method, to reduce the driving voltage of organic luminescent assembly.
For reaching above-mentioned purpose, a kind of organic luminescent assembly provided by the utility model, this organic luminescent assembly structure comprises a substrate from bottom to top in regular turn, one negative electrode, one organic layer and a composite anode, wherein this negative electrode is the surface that is formed at this substrate, this organic layer is arranged between this negative electrode and this composite anode, and this composite anode includes one first transparent metal layer and one second transparent metal layer, this first transparent metal layer has first bottom surface that a first surface and faces this organic layer, and this second transparent metal layer is located at the first surface of this first transparent metal layer.
Organic luminescent assembly of the present utility model, make with low temperature, lower powered thin film-forming method, overcome the uncontrollable reduction of face resistance value of prior art, caused the defective of the driving voltage rising of organic luminescent assembly relatively, and reduced the driving voltage of organic luminescent assembly effectively.
After below enumerating graphic being described in more detail in of preferred embodiment cooperation of the present utility model now.
Description of drawings
Fig. 1 is the existing active driving organic luminescent assembly schematic diagram of making through the forward processing procedure;
Fig. 2 is the existing active driving organic luminescent assembly schematic diagram of making through reverse processing procedure;
Fig. 3 drives the organic luminescent assembly schematic diagram for existing passive type through oppositely processing procedure making;
Fig. 4 is the schematic diagram of the active driving organic luminescent assembly of the utility model one preferred embodiment;
Fig. 5 is figure for the current density and the voltage pass of the utility model the foregoing description;
Fig. 6 is figure for the briliancy and the voltage pass of the utility model the foregoing description;
Fig. 7 is the schematic diagram of the active driving organic luminescent assembly of another preferred embodiment of the utility model;
Fig. 8 is the schematic diagram that the passive type of the utility model one preferred embodiment drives organic luminescent assembly;
Fig. 9 is the schematic diagram that another passive type of the utility model drives organic luminescent assembly.
[primary clustering symbol description]
1 organic luminescent assembly
1a plurality of groups of substrates of thin-film transistor 1b anode
1c organic layer 1d negative electrode
2 organic luminescent assemblies
2a plurality of groups of substrates of thin-film transistor 2b protective layer
2c negative electrode 2d organic layer 2e anode
3 organic luminescent assemblies
3d light-emitting layer 3e electricity hole transmitting layer 3 f anode
10 organic luminescent assemblies
12 plurality of groups of substrates of thin-film transistor, 121 transparent bodies
122 thin-film transistors, 123 protective layers
14 negative electrodes, 16 organic layers, 161 electron transfer layers
162 light-emitting layers, 163 electric hole transport layers, 164 electric hole implanted layers
18 composite anodes
181 first transparent metal layers
181a first surface 181b first bottom surface
182 second transparent metal layers
182a second surface 182b second bottom surface
183 the 3rd transparent metal layers
10 ' organic luminescent assembly
18 ' composite anode
181 ' first transparent metal layer, 182 ' second transparent metal layer
20 organic luminescent assemblies
22 substrates, 24 negative electrodes, 26 organic layers
261 electron transfer layers, 262 light-emitting layers, 263 electric hole transport layers
264 electric hole implanted layer 28 composite anodes
281 first transparent metal layers, 282 second transparent metal layers
283 the 3rd transparent metal layers
20 ' organic luminescent assembly
28 ' composite anode
281 ' first transparent metal layer, 282 ' second transparent metal layer
Embodiment
Seeing also shown in Figure 4ly, is the active driving organic luminescent assembly 10 of the utility model one preferred embodiment, and this organic luminescent assembly 10 makes through reverse processing procedure, and its structure comprises from bottom to top in regular turn:
One plurality of groups of substrates of thin-film transistor 12; this substrate 12 comprises a transparent bodies 121, plurality of films transistor 122 and a protective layer 123; wherein this transparent bodies 121 can be glass substrate or plastic base; have those on its surface and be the island thin-film transistor 122 that array is arranged, and this protective layer 123 covers this transparent bodies 121 and those thin-film transistors 122.
One negative electrode 14 be film forming in these protective layer 123 surfaces, this negative electrode 14 is to make the film that thickness is 1500 dusts () with magnesium ag material (MgAg) in the present embodiment.
One organic layer 16 comprises an electron transfer layer 161, a light-emitting layer 162, one electric hole the transport layer 163 and one electric hole implanted layer 164 that up stacks in regular turn from this negative electrode 14 surfaces, wherein:
This electron transfer layer 161 be with Alq3 be material filming in negative electrode 14 surfaces, its thickness is 200 dusts ();
This light-emitting layer 162 be in the present embodiment with the C545T material that can send green glow be the Alq3 material alloy with the system of mixing mutually become example, wherein the doping content of C545T material is 0.8% of an Alq3 material, light-emitting layer 162 film forming are in electron transfer layer 161 surfaces, and its thickness is 400 dusts ();
This electricity hole transport layer 163 be with NPB be material filming in these light-emitting layer 162 surfaces, its thickness is 300 dusts ();
This electricity hole implanted layer 164 be with PTCDA be material filming in these transport layer 163 surfaces, electricity hole, its thickness is 700 dusts ().
One composite anode 18 is made of one first transparent metal layer 181, one second transparent metal layer 182 and one the 3rd transparent metal layer 183, wherein:
The material that constitutes this first transparent metal layer 181 is from indium tin oxide (Indium TinOxide, ITO), indium-zinc oxide (Indium Zinc Oxide, IZO), aluminium zinc oxide (Aluminum Zinc Oxide, AZO), germanium tin-oxide (Germanium Tin Oxide, GTO) and zinc oxide (Zinc Oxide, ZnO), tin oxide (Tin Oxide, SnO2) in the group that is constituted selected one, its thickness between 100 dusts () between 2000 dusts (), first transparent metal layer 181 in the present embodiment is that the indium-zinc oxide with film forming under the low temperature environment is formed at these electricity hole implanted layer 164 surfaces and makes, these first transparent metal layer, 181 thickness are 500 dusts (), and it has a first surface 181a and one first bottom surface 181b, and this first bottom surface 181b contacts with these electricity hole implanted layer 164 surfaces;
The material that constitutes this second transparent metal layer 182 is to be selected from the metal material of work function (Work Function) greater than 4 electron-volts (eV), as gold (Au), platinum (Pt), nickel (Ni), chromium (Cr), the work function of tin (Sn) and germanium materials such as (Ge) all is greater than 4 electron-volts (eV), in the present embodiment, this second transparent metal layer 182 is to be about 5.1 electron-volts (eV) with work function, conductance is about the gold (Au) of 0.452 (106/cm* Ω) and makes for material, this second transparent metal layer 182 has a second surface 182a and one second bottom surface 182b, this second bottom surface 182b contacts with the first surface 181a of first transparent metal layer 181, its thickness between 5 dusts () between 150 dusts ();
The material that constitutes the 3rd transparent metal layer 183 is also from indium tin oxide (Indium TinOxide, ITO), indium-zinc oxide (Indium Zinc Oxide, IZO), aluminium zinc oxide (Aluminum Zinc Oxide, AZO), germanium tin-oxide (Germanium Tin Oxide, GTO) and zinc oxide (Zinc Oxide, ZnO), tin oxide (Tin Oxide, SnO2) in the group that is constituted selected one, its thickness between 100 dusts () between 2000 dusts (), in present embodiment, the 3rd transparent metal layer 183 is formed at the second surface 182a of second transparent metal layer 182, and it is that material is made the film that thickness is 500 dusts () with the indium-zinc oxide.
More than be the explanation of the utility model organic luminescent assembly 10 each member and relevant position thereof, its light-emitting layer 162 is produced only passes this composite anode 18 (represented as arrow).In the above-described embodiments; be to adopt to be suitable for low temperature; make in the low-power and be unlikely to influence indium-zinc oxide (IZO) material of light transmittance; make first transparent metal layer 181 that directly contacts with electric hole implanted layer 164 surfaces of organic layer 16; so can avoid Yin Gaowen; high power processing procedure and destroy organic layer 16; then; make this second transparent metal layer 182 with the extremely low gold of resistivity (Au) material; use the face resistance value that effective control reduces whole composite anode 18; and because the thickness of second transparent metal layer 182 as thin as a wafer; therefore can not have influence on penetrating of light; at last, cover these second transparent metal layers 182 so that the protection effect to be provided with indium-zinc oxide (IZO) material as the 3rd transparent metal layer 183 again.
So, from as can be known above-mentioned, the composite anode 18 of organic luminescent assembly 10 of the present utility model is in reverse processing procedure, not only avoided high temperature, high power film forming processing procedure to derive and be easy to destroy the disappearance of organic layer 16, more,, make the face resistance value of whole composite anode 18 reduce and the raising current density as gold (Au) material because of having added the extremely low metallic film of resistivity, and then the driving voltage of reduction organic luminescent assembly 10, and can improve briliancy.
Below can reach really because of setting with regard to composite anode 18 of the present utility model more now and improve current density, reduce driving voltage and improve the briliancy explanation with this second transparent metal layer 182, close chat earlier bright, the tested organic luminescent assembly of the following stated (hereinafter to be referred as tested assembly) structure is roughly the same, only different in the anode construction design, that is:
The anode of tested assembly one is to make single tunic with indium-zinc oxide (IZO), and its thickness is 1000 dusts ();
The anode of tested assembly two is composite anode of the present utility model, and the thickness of its second transparent metal layer is 30 dusts ();
The anode of tested assembly three is a composite anode of the present utility model, and wherein the thickness of second transparent metal layer is 60 dusts ();
The anode of tested assembly four is a composite anode of the present utility model, and wherein the thickness of second transparent metal layer is 90 dusts ();
Continue and to cooperate Fig. 5, shown in Figure 6, be that above-mentioned each tested assembly is in low temperature process, and the processing procedure power setting under the 100W situation current density and voltage to close be that figure and briliancy are figure with the voltage pass, from as can be known shown in Figure 5, the current density of tested assembly one is on the low side, promptly represent the driving voltage height, and has the tested assembly two to four of composite anode, because of having the second extremely low transparent metal layer of resistivity, and along with thickness slightly increases, make the current density that records promote relatively, change speech, the driving voltage of organic luminescent assembly reduces to receive the effect of power saving, and the briliancy that Fig. 6 then discloses tested assembly two to four obtains to promote, in order to do helping the brightness that benefits the display screen that improves whole luminescence component.
What another was carried is, composite anode 18 structures in Fig. 4 are with first, second and third transparent metal layer 181,182 and 183 formations, what only must illustrate is, composite anode of the present utility model is the making that can in good time omit the 3rd transparent metal layer 183 according to practical application request, that is as shown in Figure 7, the composite anode 18 ' of this organic luminescent assembly 10 ' only is made of first transparent metal layer 181 ' and second transparent metal layer 182 ', and it has face resistance value that reduces whole composite anode 18 ' and the advantage of avoiding destroying organic layer equally.
See also the utility model technology shown in Figure 8 again and be applied to passive type driving organic luminescent assembly 20, the structure of this organic luminescent assembly 20 and the organic luminescent assembly of previous embodiment 10 structures are roughly the same, that is has a substrate 22, negative electrode 24, comprise electron transfer layer 261, light-emitting layer 262, electricity hole transport layer 263, the organic layer 26 of electricity hole implanted layer 264, comprise first, second, the 3rd transparent metal layer 281,282,283 composite anode 28, the composition of above-mentioned each member and thickness are with organic luminescent assembly 10, will not give unnecessary details in this, it is for not comprising the glass substrate of thin-film transistor that the thought difference is in the substrate 22 of organic luminescent assembly 20, or plastic base, in like manner, organic luminescent assembly 20 is when oppositely processing procedure is made, its composite anode 28 is made in low temperature and can be avoided organic layer 26 is damaged, and the face resistance value of whole composite anode 28 obtains to reduce.The composite anode 28 ' that Fig. 9 then further discloses organic luminescent assembly 20 ' only comprises first transparent metal layer 281 ' and second transparent metal layer 282 '.
The above only is a preferable possible embodiments of the present utility model, uses the equivalent structure variation that the utility model specification and claim are done such as, ought to be included in the claim of the present utility model.
Claims (12)
1. organic luminescent assembly, it is characterized in that: this organic luminescent assembly structure comprises a substrate, a negative electrode, an organic layer and a composite anode from bottom to top in regular turn, this negative electrode is to be formed at this substrate surface, and this organic layer is arranged between this negative electrode and this composite anode, wherein:
This composite anode includes one first transparent metal layer and one second transparent metal layer, and this first transparent metal layer has first bottom surface that a first surface and faces this organic layer, and this second transparent metal layer is located at the first surface of this first transparent metal layer.
2. organic luminescent assembly as claimed in claim 1 is characterized in that: the first transparent metal layer material that constitutes this composite anode is one of selected from the group that indium tin oxide, indium-zinc oxide, aluminium zinc oxide, germanium tin-oxide and zinc oxide, tin oxide are constituted.
3. organic luminescent assembly as claimed in claim 1 or 2 is characterized in that: the thickness of first transparent metal layer of described this composite anode is between 100 dust to 2000 dusts.
4. organic luminescent assembly as claimed in claim 1 is characterized in that: the work function of second transparent metal layer of described this composite anode is greater than 4 electron-volts.
5. organic luminescent assembly as claimed in claim 4 is characterized in that: the second transparent metal layer material of described this composite anode of formation is one of selected from gold, group that platinum, nickel, chromium, tin and germanium constituted.
6. as claim 1 or 5 described organic luminescent assemblies, it is characterized in that: the thickness of second transparent metal layer of described this composite anode is between 5 dust to 150 dusts.
7. organic luminescent assembly as claimed in claim 1, it is characterized in that: described this second transparent metal layer has a second surface and one second bottom surface, this second bottom surface contacts with the first surface of this first transparent metal layer, this composite anode more includes one the 3rd transparent metal layer, and the 3rd transparent metal layer is located at the second surface of this second transparent metal layer.
8. organic luminescent assembly as claimed in claim 7 is characterized in that: the 3rd transparent metal layer material that constitutes this composite anode is one of selected from the group that indium tin oxide, indium-zinc oxide, aluminium zinc oxide, germanium tin-oxide and zinc oxide, tin oxide are constituted.
9. as claim 7 or 8 described organic luminescent assemblies, it is characterized in that: the thickness of the 3rd transparent metal layer of described this composite anode is between 100 dust to 2000 dusts.
10. organic luminescent assembly as claimed in claim 1, it is characterized in that: described this organic layer comprises an electron transfer layer, a light-emitting layer, an electric hole transport layer and an electric hole implanted layer, this electron transfer layer is between this negative electrode and this light-emitting layer, this electricity hole transport layer is between this light-emitting layer and this composite anode, and this electricity hole implanted layer is positioned at the first transparent metal interlayer of this electricity hole transport layer and this composite anode.
11. organic luminescent assembly as claimed in claim 1 is characterized in that: described this substrate is glass substrate or plastic base.
12. organic luminescent assembly as claimed in claim 1 is characterized in that: described this substrate is a plurality of groups of substrates of thin-film transistor, comprising:
One transparent bodies;
The plurality of films transistor is to be array to be arranged in this transparent bodies surface; And
One protective layer is to cover this transparent bodies and those thin-film transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520145412 CN2867601Y (en) | 2005-11-29 | 2005-11-29 | Organic luminous module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520145412 CN2867601Y (en) | 2005-11-29 | 2005-11-29 | Organic luminous module |
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| CN2867601Y true CN2867601Y (en) | 2007-02-07 |
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| CN 200520145412 Expired - Fee Related CN2867601Y (en) | 2005-11-29 | 2005-11-29 | Organic luminous module |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102760839A (en) * | 2011-04-28 | 2012-10-31 | 海洋王照明科技股份有限公司 | Electroluminescent anode, electroluminescent device and preparation method thereof |
| CN103579520A (en) * | 2012-07-30 | 2014-02-12 | 昆山维信诺显示技术有限公司 | Organic light emitting diode display device |
| CN105118850A (en) * | 2015-09-22 | 2015-12-02 | 深圳市华星光电技术有限公司 | Active matrix organic light-emitting diode substrate and display device thereof |
| CN105914226A (en) * | 2016-05-30 | 2016-08-31 | 京东方科技集团股份有限公司 | OLED display substrate and manufacturing method thereof, display device and mask plate |
-
2005
- 2005-11-29 CN CN 200520145412 patent/CN2867601Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102760839A (en) * | 2011-04-28 | 2012-10-31 | 海洋王照明科技股份有限公司 | Electroluminescent anode, electroluminescent device and preparation method thereof |
| CN103579520A (en) * | 2012-07-30 | 2014-02-12 | 昆山维信诺显示技术有限公司 | Organic light emitting diode display device |
| CN103579520B (en) * | 2012-07-30 | 2016-09-07 | 昆山维信诺显示技术有限公司 | Organic light emitting diodde desplay device |
| CN105118850A (en) * | 2015-09-22 | 2015-12-02 | 深圳市华星光电技术有限公司 | Active matrix organic light-emitting diode substrate and display device thereof |
| CN105914226A (en) * | 2016-05-30 | 2016-08-31 | 京东方科技集团股份有限公司 | OLED display substrate and manufacturing method thereof, display device and mask plate |
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