CN105118850A - Active matrix organic light-emitting diode substrate and display device thereof - Google Patents
Active matrix organic light-emitting diode substrate and display device thereof Download PDFInfo
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- CN105118850A CN105118850A CN201510609535.3A CN201510609535A CN105118850A CN 105118850 A CN105118850 A CN 105118850A CN 201510609535 A CN201510609535 A CN 201510609535A CN 105118850 A CN105118850 A CN 105118850A
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Abstract
The invention discloses an active matrix organic light-emitting diode substrate and a display device thereof, and relates to the display technology field. The active matrix organic light-emitting diode substrate comprises a cathode electrode layer, a light-emitting layer and an anode electrode layer, which are laminated in sequence. The anode electrode layer is disposed at one side of emission of light. The anode electrode layer includes a transparent conductive layer and an additional layer. The light transmission rate of the material of the additional layer is higher than that of the transparent conductive layer. The resistivity of the material of the additional layer is smaller than that of the transparent conductive layer. The transparent conductive layer is positioned between the additional layer and the light-emitting layer. Through the above way, the problem that a conventional active matrix organic light-emitting diode display screen is difficult to drive is solved.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of active matrix organic light-emitting diode substrate and display unit thereof.
Background technology
At Organic Electricity laser diode (OrganicLight-EmittingDiode, in the research field of OLED) Display Technique, active matrix organic light-emitting diode (Active-MatrixOrganicLight-EmittingDiode, AMOLED) there is the speciality of ultimate display, the display utilizing active matrix organic light-emitting diode to make has the advantages such as the fast and volume of high colour gamut, wide viewing angle, reaction speed is little concurrently, thus becomes the research emphasis of great majority display manufacturer.
Existing AMOLED display screen, bottom emitting type and top emission type two type can be divided into according to the exit direction of light, wherein the light outgoing of bottom emitting type AMOLED is in underlay substrate side, and the light of top emission type AMOLED is then from the top outgoing relative with underlay substrate.On the basis of current Display Technique, in order to adapt to AMOLED display screen growth requirement in large size, the general organic diode of top emitting white light and the superimposed mode of chromatic filter layer of adopting meets this demand.
In traditional top hair style AMOLED structure, mainly comprise thin-film transistor (ThinFilmTransistor, TFT) substrate, anode electrode layer, pixel segmentation layer, AMOLED light emitting functional layer and negative electrode layer, wherein anode electrode layer adopts the tin indium oxide (IndiumTinOxide of certain barrier height usually, ITO) material, is convenient to hole and injects.But, because ITO has certain resistance, when this AMOLED structure is applied to large-sized AMOLED display, the problem of the more difficult driving of AMOLED display screen will certainly be caused.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of active matrix organic light-emitting diode substrate and display unit thereof, solves the existing problem that there is the more difficult driving of active matrix/organic light emitting diode (AMOLED) display screen.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: provide a kind of active matrix organic light-emitting diode substrate, wherein, comprising: negative electrode layer superimposed successively, luminescent layer and anode electrode layer, described anode electrode layer is the outgoing side of light; Described anode electrode layer comprises transparency conducting layer and extra play, and the light transmittance of the material of described extra play is greater than the light transmittance of described transparency conducting layer, and the resistivity of the material of described extra play is less than the resistivity of described transparency conducting layer;
Described transparency conducting layer is between described extra play and described luminescent layer.
Wherein, described transparency conducting layer is ITO layer; Described extra play is graphene layer.
Wherein, comprise substrate layer further, described substrate layer is formed with successively negative electrode layer, electron injecting layer, electron transfer layer, described luminescent layer, hole transmission layer, hole injection layer, described transparency conducting layer and described extra play; Wherein, described negative electrode layer is used for being electrically connected with cathode traces, and described electron injecting layer is superimposed on described negative electrode layer;
Described anode electrode layer is used for being electrically connected with cathode circuit, and described transparency conducting layer is superimposed on described hole injection layer.
Wherein, described negative electrode layer is formed with source electrode, drain electrode, described negative electrode layer, described source electrode and described drain electrode are same material layer.
Wherein, described negative electrode layer is Ag layer.
Wherein, pixel segmentation layer is also provided with in described luminescent layer.
In order to solve the problems of the technologies described above, another technical scheme that the present invention also adopts is: provide a kind of display unit,
Wherein, comprising: a kind of active matrix organic light-emitting diode substrate.
Wherein, comprising: negative electrode layer superimposed successively, luminescent layer and anode electrode layer, described anode electrode layer is the outgoing side of light; Described anode electrode layer comprises transparency conducting layer and extra play, and the light transmittance of the material of described extra play is greater than the light transmittance of described transparency conducting layer, and the resistivity of the material of described extra play is less than the resistivity of described transparency conducting layer;
Described transparency conducting layer is between described extra play and described luminescent layer.
Wherein, described transparency conducting layer is ITO layer; Described extra play is graphene layer.
Wherein, comprise substrate layer further, described substrate layer is formed with successively negative electrode layer, electron injecting layer, electron transfer layer, described luminescent layer, hole transmission layer, hole injection layer, described transparency conducting layer and described extra play; Wherein, described negative electrode layer is used for being electrically connected with cathode traces, and described electron injecting layer is superimposed on described negative electrode layer;
Described anode electrode layer is used for being electrically connected with cathode circuit, and described transparency conducting layer is superimposed on described hole injection layer.
Wherein, described negative electrode layer is formed with source electrode, drain electrode, described negative electrode layer, described source electrode and described drain electrode are same material layer.
Wherein, described negative electrode layer is Ag layer.
Wherein, pixel segmentation layer is also provided with in described luminescent layer.
The invention has the beneficial effects as follows: the situation being different from prior art, the present invention adopts the active matrix organic light-emitting diode board structure of inversion type, namely first on substrate layer, negative electrode layer is made, finally just make anode electrode layer, active matrix organic light-emitting diode substrate is superimposed with negative electrode layer, luminescent layer, anode electrode layer successively, and anode electrode layer is the outgoing side of light; Anode electrode layer comprises transparency conducting layer and extra play, the light transmittance of the material of extra play is greater than the light transmittance of anode electrode layer, the resistivity of the material of extra play is less than the resistivity of anode electrode layer, extra play is while taking into account the light transmission of transparency conducting layer, the resistance of effective reduction anode electrode entirety, solve because transparency conducting layer exists the problem of the driving difficulty that certain resistance brings to active matrix organic light-emitting diode substrate, thus promote stability and the useful life of display screen and device thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of active matrix organic light-emitting diode substrate one execution mode of the present invention;
Fig. 2 is the functional layer structure schematic diagram of an execution mode in active matrix organic light-emitting diode substrate of the present invention;
Fig. 3 is the concrete structure schematic diagram of an execution mode in active matrix organic light-emitting diode substrate of the present invention;
Fig. 4 is another execution mode structural representation of active matrix organic light-emitting diode substrate of the present invention;
Fig. 5 is the flow chart of active matrix organic light-emitting diode manufacture of substrates of the present invention.
Embodiment
Consult Fig. 1, one execution mode of active matrix organic light-emitting diode substrate 1 of the present invention, comprise: negative electrode layer 11 superimposed successively, luminescent layer 12 and anode electrode layer 13, anode electrode layer 13 is the outgoing side of light, wherein, anode electrode layer 13 comprises transparent electrode layer 131 and extra play 132, the light transmittance of the material of extra play 132 is greater than the light transmittance of transparency conducting layer 131, and the resistivity of the material of extra play 132 is less than the resistivity of transparency conducting layer 131, transparency conducting layer 131 is between extra play 132 and luminescent layer 12.
In active matrix organic light-emitting diode substrate 1, the light that luminescent layer 12 sends is via anode electrode layer 13 outgoing in the external world, and anode electrode layer 13 comprises transparency conducting layer 131 and extra play 132.The light transmittance of the material of extra play 132 is greater than the light transmittance of transparency conducting layer 131, and the light transmission of extra play 132 is better than transparency conducting layer 131; The resistivity of the material of extra play 132 is less than the resistivity of transparency conducting layer 131, the resistance of extra play 132 is less, extra play 132 is superimposed on transparency conducting layer 131, extra play 132 is in parallel with transparency conducting layer 131, while the light transmission taking into account anode electrode layer 13, the resistance of effective reduction anode electrode layer 13 entirety, solve because transparency conducting layer 131 exists the problem of the driving difficulty that certain resistance brings to active matrix organic light-emitting diode substrate, thus promote stability and the useful life of display screen and device thereof.
Further, light transmission conductive layer is ITO layer, and extra play is graphene layer.ITO possesses good light transmission and stability, and Graphene light transmission is good and resistivity is little.Graphene layer is superimposed in ITO layer, and in parallel with ITO layer, thus realizes while taking into account anode electrode layer 13 light transmission, effectively reduces the resistance of anode electrode layer 13 entirety.
Consult Fig. 1 and Fig. 2, active matrix organic light-emitting diode substrate 1 of the present invention comprises substrate layer 14 further, substrate layer 14 is formed with successively negative electrode layer 11, electron injecting layer 15, electron transfer layer 16, luminescent layer 12, hole transmission layer 17, hole injection layer 18, transparency conducting layer 131 and extra play 132.Wherein, negative electrode layer 11 is for being electrically connected with cathode traces, and electron injecting layer 15 is superimposed on negative electrode layer 11; Anode electrode layer 13 is for being electrically connected with cathode circuit, and transparency conducting layer 131 is superimposed on hole injection layer 18.Hole injection layer 18 directly contacts with transparency conducting layer 131, is beneficial to the injection in hole.
Consult Fig. 3, negative electrode layer 11 is formed with source electrode 23, drain electrode 24, and negative electrode layer 11, source electrode 23 and drain electrode 24 are same material layer, in process of production, patterning is formed in optical cover process, enhances productivity, saving resource and environmental protection, reduce production cost.Further, the material of negative electrode layer 11 is herein Ag, Ag good conductivity and is the metal of harmonic function, is beneficial to the injection of electronics.
In addition, in the luminescent layer 12 of active matrix organic light-emitting diode substrate 1 of the present invention, be also provided with pixel segmentation layer 28, the controlled inhibition and generation realizing light-emitting zone is set by pixel segmentation layer 28.
Consult Fig. 4, for another execution mode of active matrix organic light-emitting diode substrate of the present invention, display unit 3 comprises active matrix organic light-emitting diode substrate 1 of the present invention, solve because transparency conducting layer exists on the problem basis of the driving difficulty that certain resistance brings at active matrix organic light-emitting diode substrate 1, display unit 3 meets the growth requirement of screen large scale.
Consult Fig. 3 and Fig. 5, present invention also offers the manufacture method of active matrix organic light-emitting diode substrate 1.
Manufacture method comprises:
Step one S001: cover a metal level on substrate layer 11, patterning forms grid 21, preparation one first insulating barrier 22 cover gate 21; By patterning, metal level is made into predetermined shape.
Step 2 S002: cover a metal level on the first insulating barrier 22, patterning forms negative electrode layer 11, source electrode 23 and drain electrode 24;
Step 3 S003: prepare the negative electrode layer 11 that a luminescent layer 12 and the second insulating barrier 25, second insulating barrier 25 cover source electrode 23, drain electrode 25 and a part on negative electrode layer 11 respectively, luminescent layer 12 covers the negative electrode layer 11 of another part; First insulating barrier 22 is also provided with an etch stop layer 26 and semi-conductor layer 27, and etch stop layer 26 has etching barrier effect.
Step 4 S004: prepare transparency conducting layer 131 and be covered on luminescent layer 12 and the second insulating barrier 25;
Step 5 S005: prepare one deck extra play 132 on transparency conducting layer 131, extra play 132 covers transparency conducting layer 131.
Herein, metal level adopts Ag material, Ag good conductivity and be the metal of low work function, negative electrode layer 1, source electrode 23 and drain electrode 24 are same material, formed by patterning in optical cover process, compared with needing repeatedly patterning with tradition, reduce production stage, enhance productivity, be also beneficial to the saving of resource simultaneously.
Herein, in step 5 S005, transparency conducting layer 131 is ITO layer, and extra play 132 is graphene layer, and graphene layer adopts evaporation process to be covered in ITO layer, evaporation process comparative maturity, applied range.
In addition, step 3 S003, in luminescent layer 12, also preparation has a pixel segmentation layer 28, makes the regional extent of the emergent light of luminescent layer 12 have controllability.
In sum, active matrix organic light-emitting diode substrate of the present invention comprises negative electrode layer 11 superimposed successively, luminescent layer 12 and anode electrode layer 13, adopt the active matrix organic light-emitting diode board structure of inversion type, be beneficial to the driving of display large area; Anode electrode layer 13 is the exit layer of light, comprise light transmission conductive layer 131 and extra play 132, utilize light transmission conductive layer 131 and extra play 132 properties of materials, while taking into account light transmission, the resistance of effective reduction anode electrode layer 13 entirety, solves because transparency conducting layer exists the problem of the driving difficulty that certain resistance brings to active matrix organic light-emitting diode substrate 1.
The foregoing is only embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (7)
1. an active matrix organic light-emitting diode substrate, is characterized in that, comprising:
Negative electrode layer superimposed successively, luminescent layer and anode electrode layer, described anode electrode layer is the outgoing side of light; Described anode electrode layer comprises transparency conducting layer and extra play, and the light transmittance of the material of described extra play is greater than the light transmittance of described transparency conducting layer, and the resistivity of the material of described extra play is less than the resistivity of described transparency conducting layer;
Described transparency conducting layer is between described extra play and described luminescent layer.
2. according to the active matrix organic light-emitting diode substrate described in claim 1, it is characterized in that, described transparency conducting layer is ITO layer; Described extra play is graphene layer.
3. according to the active matrix organic light-emitting diode substrate described in claim 2, it is characterized in that, comprise substrate layer further, described substrate layer is formed with successively negative electrode layer, electron injecting layer, electron transfer layer, described luminescent layer, hole transmission layer, hole injection layer, described transparency conducting layer and described extra play;
Wherein, described negative electrode layer is used for being electrically connected with cathode traces, and described electron injecting layer is superimposed on described negative electrode layer;
Described anode electrode layer is used for being electrically connected with cathode circuit, and described transparency conducting layer is superimposed on described hole injection layer.
4. according to the active matrix organic light-emitting diode substrate described in claim 1, it is characterized in that, described negative electrode layer is formed source electrode, drain electrode, described negative electrode layer, described source electrode and described drain electrode are same material layer.
5. according to the active matrix organic light-emitting diode substrate described in claim 4, it is characterized in that, described negative electrode layer is Ag layer.
6., according to the active matrix organic light-emitting diode substrate described in claim 1, it is characterized in that, in described luminescent layer, be also provided with pixel segmentation layer.
7. a display unit, is characterized in that, comprises the active matrix organic light-emitting diode substrate as described in any one of claim 1 to 6.
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| CN107799569A (en) * | 2017-09-16 | 2018-03-13 | 合肥惠科金扬科技有限公司 | A kind of pixel defining layer module of QLED display panels |
| CN107863455A (en) * | 2017-09-16 | 2018-03-30 | 合肥惠科金扬科技有限公司 | A kind of manufacturing process of the pixel defining layer module of QLED display panels |
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