CN105355800A - Organic light-emitting diode substrate of active matrix and display device of organic light-emitting diode substrate - Google Patents
Organic light-emitting diode substrate of active matrix and display device of organic light-emitting diode substrate Download PDFInfo
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- CN105355800A CN105355800A CN201510708349.5A CN201510708349A CN105355800A CN 105355800 A CN105355800 A CN 105355800A CN 201510708349 A CN201510708349 A CN 201510708349A CN 105355800 A CN105355800 A CN 105355800A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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Abstract
The invention discloses an organic light-emitting diode substrate of an active matrix and a display device of the organic light-emitting diode substrate, and relates to the technical field of displaying. The organic light-emitting diode substrate of the active matrix disclosed by the invention comprises a luminescent layer and a cathode electrode layer, wherein the cathode electrode layer is a light emitting side and comprises a metal layer and an additional layer; the light penetration rate of the material of the additional layer is greater than that of the metal layer; the specific resistance of the material of the additional layer is smaller than that of the metal layer; and the metal layer is located between the additional layer and the luminescent layer. According to the organic light-emitting diode substrate of the active matrix, the transmittance and the conductivity of the cathode electrode layer can be simultaneously considered.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of active matrix organic light-emitting diode substrate and display unit thereof.
Background technology
At Organic Electricity laser diode (OrganicLight-EmittingDiode, in the research field of OLED) Display Technique, active matrix organic light-emitting diode (Active-MatrixOrganicLight-EmittingDiode, AMOLED) there is the speciality of ultimate display, the display utilizing active matrix organic light-emitting diode to make has the advantages such as the fast and volume of high colour gamut, wide viewing angle, reaction speed is little concurrently, thus becomes the research emphasis of great majority display manufacturer.
Existing AMOLED display screen, bottom emitting type and top emission type two type can be divided into according to the emission mode of light, wherein the light outgoing of bottom emitting type AMOLED comes from underlay substrate side, and the light of top emission type AMOLED then comes from the top relative with underlay substrate.On the basis of current Display Technique, in order to adapt to AMOLED display screen growth requirement in large size, the general organic diode of top emitting white light and the superimposed mode of chromatic filter layer of adopting meets this demand.
In top emission type AMOLED, light outgoing from negative electrode layer, to the external world, thus requires that negative electrode layer has higher light transmittance, and the injection of conveniently electronics, usually also require that the potential barrier of the material of negative electrode layer is very low.Existing negative electrode layer adopts thinner Ag (silver) material film usually, and in order to meet the higher light transmittance requirement that negative electrode layer has, mode often by reducing Ag film thickness realizes, but while minimizing Ag film thickness, the problem that Ag film resistor increases can be brought, and the increase of Ag film resistor can restrict the injection of electronics, existing defects.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of active matrix organic light-emitting diode substrate and display unit thereof, can take into account light transmission and the conductivity of negative electrode layer simultaneously.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: provide a kind of active matrix organic light-emitting diode substrate
It comprises: luminescent layer and negative electrode layer, and described negative electrode layer is the outgoing side of light; Described negative electrode layer comprises metal level and extra play, and the light transmittance of the material of described extra play is greater than the light transmittance of metal level, and the resistivity of the material of described extra play is less than metal level; Described metal level is between described extra play and described luminescent layer.
Wherein, described metal level is Ag layer; Described extra play is graphene layer.
Wherein, comprise substrate layer further, described substrate layer is formed with successively anode electrode layer, hole injection layer, hole transmission layer, described luminescent layer, electron transfer layer, electron injecting layer and described negative electrode layer;
Wherein, described anode electrode layer is used for being electrically connected with cathode circuit; Described hole injection layer is superimposed on described anode electrode layer; Described negative electrode layer is used for being electrically connected with cathode traces, and described Ag layer is superimposed on described electron injecting layer.
Wherein, described anode electrode layer is ITO layer.
Wherein, described substrate layer is glass substrate.
Wherein, in described luminescent layer, pixel segmentation layer is provided with further.
For solving the problems of the technologies described above, another technical solution used in the present invention is: provide a kind of AMOLED display device,
Wherein, comprise active matrix/organic light emitting diode (AMOLED) substrate, described active matrix organic light-emitting diode substrate comprises luminescent layer and negative electrode layer, and described negative electrode layer is the outgoing side of light; Described negative electrode layer comprises metal level and extra play, and the light transmittance of the material of described extra play is greater than the light transmittance of metal level, and the resistivity of the material of described extra play is less than metal level; Described metal level is between described extra play and described luminescent layer.
Wherein, described metal level is Ag layer; Described extra play is graphene layer.
Wherein, comprise substrate layer further, described substrate layer is formed with successively anode electrode layer, hole injection layer, hole transmission layer, described luminescent layer, electron transfer layer, electron injecting layer and described negative electrode layer;
Wherein, described anode electrode layer is used for being electrically connected with cathode circuit; Described hole injection layer is superimposed on described anode electrode layer; Described negative electrode layer is used for being electrically connected with cathode traces, and described Ag layer is superimposed on described electron injecting layer.
Wherein, described anode electrode layer is ITO layer.
Wherein, described substrate layer is glass substrate.
Wherein, in described luminescent layer, pixel segmentation layer is provided with further.
The invention has the beneficial effects as follows: the situation being different from prior art, active matrix organic light-emitting diode substrate of the present invention adds an extra play outward at metal level, the light transmittance of the material of described extra play is greater than the light transmittance of described metal level, and the resistivity of the material of described extra play is less than described metal level, the large problem of the resistance that causes when metal level is very thin is solved by the extra play added, utilize extra play to have good light transmission and superimposed with described metal level simultaneously, thus promote light transmission and the conductivity of negative electrode layer.
Accompanying drawing explanation
Fig. 1 is the structural representation of active matrix organic light-emitting diode substrate one execution mode of the present invention;
Fig. 2 is the functional layer structure schematic diagram of an execution mode in active matrix organic light-emitting diode substrate of the present invention;
Fig. 3 is the concrete structure schematic diagram of an execution mode in active matrix organic light-emitting diode substrate of the present invention;
Fig. 4 is the structural representation of another execution mode of active matrix organic light-emitting diode substrate in the present invention.
Embodiment
Consult Fig. 1, the structural representation of active matrix organic light-emitting diode substrate 1 one execution mode of the present invention, wherein, active matrix organic light-emitting diode substrate 1 comprises: luminescent layer 11 and negative electrode layer 12, and negative electrode layer 12 is the outgoing side of light; Negative electrode layer 12 comprises metal level 121 and extra play 122, the light transmittance of the material of extra play 122 is greater than the light transmittance of metal level 121, and the resistivity of the material of extra play 122 is less than metal level 121, metal level 121 is between extra play 122 and luminescent layer 11.
Compared to metal level 121, extra play 122 adopts light transmittance comparatively large and resistivity is little material can solve the problem that negative electrode layer restricts mutually as the light transmission and conductivity that go out photosphere effectively.When the thickness of metal level 121 reduces, its light transmittance increases, then light transmission is better, but, the resistance of metal level 121 can increase along with the reduction of metal level 121 thickness, and in order to ensure light transmission and the conductivity of negative electrode layer 12, the present invention adds an extra play 122 on metal level 121, and the light transmission of extra play 122 is better than the light transmission of metal level 121, thus the light transmission of negative electrode layer 12 entirety is better than light transmission during simple increase metal level 121 thickness; Meanwhile, the resistivity of extra play 122 material is less than the resistivity of metal level 121 material, and after it is attached at metal level 121, extra play 122 is in parallel with metal level 121, reduces the resistance of negative electrode layer 12, promotes the conductivity of negative electrode layer 12.
In one more specifically application examples, metal level 121 is Ag layer, and the material of extra play 122 is graphene layer.Materials A g is the metal that resistivity is minimum, and Graphene is the minimum material of current resistivity, and its resistivity is less than metal material Ag, and the two is beneficial to the conductivity and light transmission that promote negative electrode layer 12 entirety.
Consult Fig. 2, active matrix organic light-emitting diode substrate 1 of the present invention comprises substrate layer 13 further, substrate layer 13 is formed with successively anode electrode layer 14, hole injection layer 15, hole transmission layer 16, luminescent layer 11, electron transfer layer 17, electron injecting layer 18 and negative electrode layer 12.Wherein, anode electrode layer 14 is for being electrically connected with cathode circuit, and hole injection layer 15 is superimposed on anode electrode layer 14.Negative electrode layer 12 is for being electrically connected with cathode traces, and Ag layer is superimposed on electron injecting layer 18.Electron injecting layer 18 directly contacts with Ag layer, the volatile de-electromation of Ag element, thus promotes the electron injection efficiency of electron injecting layer, promotes the luminescent properties of active matrix organic light-emitting diode substrate 1.
Herein, the material of anode electrode layer 14 is that ITO, ITO have that conductivity is good, the characteristic of good stability, and it possesses certain barrier height, is beneficial to hole and injects; Substrate layer 13 is glass substrate, stable and with low cost.
Consulting Fig. 3, is the concrete structure in active matrix organic light-emitting diode substrate 1 of the present invention.In figure, substrate layer 13 is provided with grid 21, if one first insulating barrier 22 is covered on grid 21, first insulating barrier 22 is provided with source electrode 23 and drain electrode 24, and semiconductor layer 25 is also provided with on the first insulating barrier 22, and etch stop layer 26 is provided with above semiconductor layer 25, if one second insulating barrier 27 covers etch stop layer 26, source electrode 23, drain electrode 24 and the first insulating barrier 22, anode electrode layer 14 is provided with above the second insulating barrier 27, a pixel segmentation layer 28 is coated with above the anode electrode layer 14 of a part, a luminescent layer 11 is coated with above the anode electrode layer 14 of another part, negative electrode layer 12 is all coated with above luminescent layer 11 and pixel segmentation layer 28.Pixel segmentation layer 28, by the light-emitting zone in order to fixing luminescent layer 11, is beneficial to the standardization of light-emitting zone.
Consult Fig. 4, for another execution mode of active matrix organic light-emitting diode substrate of the present invention, display unit 3 adopts active matrix organic light-emitting diode substrate of the present invention, because active matrix organic light-emitting diode substrate promotes light transmission and the conductivity of negative electrode layer, thus promote the image quality of display unit display.
In sum, in negative electrode layer 12, metal level 121 adopts light transmittance better, the metal material that resistivity is less, and extra play 122 adopts light transmittance better, the material that resistivity is less, under such prerequisite, metal level 121 can do very thin, to promote the light transmission of metal level 121, the resistance that metal level 121 thickness reduces to bring becomes large problem then to be solved by extra play 22, namely adopt mode in parallel to reduce resistance to metal level 121 and extra play 122, simultaneously, the light transmission of extra play 122 is better than metal level 121, therefore the superimposed significantly reduction that can't cause negative electrode layer 12 integral light-transmitting of the two, and opposing metallic layer 121 brings the lifting of negative electrode layer 12 integral light-transmitting, it is small that the two superimposed light transmission caused reduces, so, active matrix organic light-emitting diode substrate 1 of the present invention realizes light transmission and the conductivity of taking into account negative electrode layer simultaneously.
The foregoing is only embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (7)
1. an active matrix organic light-emitting diode substrate, is characterized in that, comprising:
Luminescent layer and negative electrode layer, described negative electrode layer is the outgoing side of light; Described negative electrode layer comprises metal level and extra play, and the light transmittance of the material of described extra play is greater than the light transmittance of metal level, and the resistivity of the material of described extra play is less than metal level;
Described metal level is between described extra play and described luminescent layer.
2. according to the active matrix organic light-emitting diode substrate described in claim 1, it is characterized in that, described metal level is Ag layer; Described extra play is graphene layer.
3. according to the active matrix organic light-emitting diode substrate described in claim 2, it is characterized in that, comprise substrate layer further, described substrate layer is formed with successively anode electrode layer, hole injection layer, hole transmission layer, described luminescent layer, electron transfer layer, electron injecting layer and described negative electrode layer;
Wherein, described anode electrode layer is used for being electrically connected with cathode circuit; Described hole injection layer is superimposed on described anode electrode layer;
Described negative electrode layer is used for being electrically connected with cathode traces, and described Ag layer is superimposed on described electron injecting layer.
4. according to the active matrix organic light-emitting diode substrate described in claim 2, it is characterized in that, described anode electrode layer is ITO layer.
5. according to the active matrix organic light-emitting diode substrate described in claim 2, it is characterized in that, described substrate layer is glass substrate.
6., according to the active matrix organic light-emitting diode substrate described in claim 1, it is characterized in that, in described luminescent layer, be provided with pixel segmentation layer further.
7. a display unit, is characterized in that, comprises the active matrix organic light-emitting diode substrate as described in any one of claim 1 to 6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510708349.5A CN105355800A (en) | 2015-10-27 | 2015-10-27 | Organic light-emitting diode substrate of active matrix and display device of organic light-emitting diode substrate |
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| CN201510708349.5A CN105355800A (en) | 2015-10-27 | 2015-10-27 | Organic light-emitting diode substrate of active matrix and display device of organic light-emitting diode substrate |
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Cited By (7)
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| CN106898707A (en) * | 2017-04-28 | 2017-06-27 | 深圳市华星光电技术有限公司 | A kind of top emission OLED device and preparation method, display panel |
| WO2018149106A1 (en) * | 2017-02-17 | 2018-08-23 | 京东方科技集团股份有限公司 | Composite transparent electrode, oled, manufacturing method thereof, array substrate, and display device |
| CN109713169A (en) * | 2019-02-19 | 2019-05-03 | 合肥京东方光电科技有限公司 | Array substrate and production method, display panel |
| CN110993823A (en) * | 2019-12-18 | 2020-04-10 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN111834549A (en) * | 2020-07-09 | 2020-10-27 | 云谷（固安）科技有限公司 | Display panel and display device |
| WO2020215421A1 (en) * | 2019-04-26 | 2020-10-29 | 深圳市华星光电半导体显示技术有限公司 | Display panel and encapsulating method therefor, and display device |
| WO2022247158A1 (en) * | 2021-05-27 | 2022-12-01 | 京东方科技集团股份有限公司 | Display device and manufacturing method therefor |
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