CN107799569A - A kind of pixel defining layer module of QLED display panels - Google Patents

A kind of pixel defining layer module of QLED display panels Download PDF

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Publication number
CN107799569A
CN107799569A CN201710836302.6A CN201710836302A CN107799569A CN 107799569 A CN107799569 A CN 107799569A CN 201710836302 A CN201710836302 A CN 201710836302A CN 107799569 A CN107799569 A CN 107799569A
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CN
China
Prior art keywords
layer
display panels
electrode
pixel defining
qled display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710836302.6A
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Chinese (zh)
Inventor
白航空
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hefei Huike Jinyang Technology Co Ltd
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Hefei Huike Jinyang Technology Co Ltd
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Publication date
Application filed by Hefei Huike Jinyang Technology Co Ltd filed Critical Hefei Huike Jinyang Technology Co Ltd
Priority to CN201710836302.6A priority Critical patent/CN107799569A/en
Publication of CN107799569A publication Critical patent/CN107799569A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention relates to display technology field, more particularly to a kind of pixel defining layer module of QLED display panels.Including pixel definition groove, the hole injection layer stacked gradually from bottom to top in pixel definition groove, hole transmission layer, quantum dot light emitting layer, electron transfer layer and electron injecting layer.The pixel defining layer module and its manufacturing process of a kind of QLED display panels of the present invention, make its service life significantly be extended, product quality is more excellent by rationally designing processing technology.

Description

A kind of pixel defining layer module of QLED display panels
Technical field
The present invention relates to display technology field, more particularly to a kind of pixel defining layer module of QLED display panels.
Background technology
Quanta point electroluminescent diode (Quantum dots Light-emitting Diodes, QLED) is a kind of new The emissive type diode of type, QLED display panels compare the spy with traditional display panel with high color saturation and high colour gamut Point, existing QLED display panel structures complexity is, it is necessary to set via to connect, and production cost is higher, and product competitiveness is not strong.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of QLED display panels, the knot of QLED display panels can be simplified Structure, the production cost of QLED display panels is reduced, lift product competitiveness.Meanwhile present invention also offers a kind of QLED to show The pixel defining layer module and its manufacturing process of panel.
In order to solve the above technical problems, the technical solution adopted by the present invention is:A kind of QLED display panels, including:Substrate, Cover the cushion of the substrate, the grid on the cushion, the covering grid and cushion gate insulator, Active layer on the gate insulator, on the gate insulator and with the source of two end in contact of the active layer Pole and drain electrode, the first electrode on the gate insulator and with the drain contact, the covering source electrode, drain electrode, the The pixel defining layer of one electrode and gate insulator, the pixel definition groove in the pixel defining layer in the first electrode, Hole injection layer, hole transmission layer, quantum dot light emitting layer, the electronics stacked gradually from bottom to top in the pixel definition groove Transport layer and electron injecting layer, the second electrode contacted in the pixel defining layer and with the electron injecting layer and Encapsulated layer in the second electrode.
The first electrode is reflecting electrode, and the second electrode is transparency electrode.
The quantum dot light emitting layer includes organic solvent material and the quantum dot material being dispersed in the organic solvent material Material, the quanta point material include:One or more in CdS, CdSe, CdTe, ZnS, ZnSe, InAs and InP.
The material of the source electrode, drain electrode and first electrode be molybdenum, iron and aluminium in one or more combinations, described second The material of electrode is tin indium oxide or indium zinc oxide.
A kind of pixel defining layer module of QLED display panels, including pixel definition groove, in pixel definition groove under Hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and the electron injecting layer stacked gradually on and.
A kind of manufacturing process of the pixel defining layer module of QLED display panels, step are as follows:
1), structure and process respectively
Pixel defining layer module, including pixel definition groove, the hole that is stacked gradually from bottom to top in pixel definition groove Implanted layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and electron injecting layer;
Every layer is manufactured according to prior art, it is then compound successively according to overlapping order;
2), pre-process
Pretreatment fluid is sprayed after compound to its outer surface, spraying terminates to dry using blast drier;
The component of pretreatment fluid is:5 parts of activated carbon, 3.3 parts of antisettling agent, 15 parts of water, 10 parts of HCPE, 0.5 part of sanguinarine;
3), subsequent treatment
Pretreated pixel defining layer module is placed in closed container, vacuumizes holding more than 24 hours, it is then extensive Multiple normal pressure further takes out.
Advantage for present invention is with effect:
1) a kind of, QLED display panels of the invention, including:Substrate, the cushion of the covering substrate, located at described slow Rush the grid on layer, the gate insulator of the covering grid and cushion, the active layer on the gate insulator, set In on the gate insulator and with the source electrode of two end in contact of the active layer and drain electrode, on the gate insulator simultaneously The pixel defining layer of first electrode, the covering source electrode, drain electrode, first electrode and gate insulator with the drain contact, Pixel definition groove in the pixel defining layer in the first electrode, in the pixel definition groove from bottom to top successively Hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and the electron injecting layer of stacking, located at the pixel The second electrode contacted on definition layer and with the electron injecting layer and the encapsulated layer in the second electrode, pass through Source-drain electrode and QLED first electrode are set with layer, connection number of vias can be reduced, avoid showing not caused by via It is good, product stability is lifted, reduces production cost, lifts product competitiveness.
2), the pixel defining layer module and its manufacturing process of a kind of QLED display panels of the invention, passes through rational design Processing technology makes its service life significantly be extended, and product quality is more excellent.
Brief description of the drawings
The invention will be further described below in conjunction with the accompanying drawings:
Fig. 1 is a kind of structure chart of QLED display panels of the present invention;
In figure:Substrate 1, cushion 2, grid 3, gate insulator 4, active layer 5, source electrode 6, drain electrode 7, first electrode 8, as Plain definition layer 12, pixel definition groove 121, hole injection layer 91, hole transmission layer 92, quantum dot light emitting layer 93, electron transfer layer 94th, electron injecting layer 95, second electrode 10, encapsulated layer 11.
Embodiment
Embodiment 1
Referring to Fig. 1, the present invention provides a kind of QLED display panels, including:The cushion of substrate 1, the covering substrate 2nd, the gate insulator 4, exhausted located at the grid of the grid 3 on the cushion, the covering grid 3 and cushion 2 Active layer 5 in edge layer, on the gate insulator 4 and with the source electrode 6 of two end in contact of the active layer 5 and drain electrode 7, It is on the gate insulator 4 and electric with 7 first electrodes 8 contacted that drain, the covering source electrode 6, drain electrode 7, first The pixel defining layer 12 of pole 8 and gate insulator 4, the pixel definition in the pixel defining layer 12 in the first electrode 8 Groove 121, the hole injection layer 91 stacked gradually from bottom to top in the pixel definition groove 121, hole transmission layer 92, quantum Point luminescent layer 93, electron transfer layer 94 and electron injecting layer 95, in the pixel defining layer 12 and with the electron injection The second electrode 10 of the contact of layer 95 and the encapsulated layer 11 in the second electrode.
Specifically, the first electrode is reflecting electrode, and the second electrode is transparency electrode.
Preferably, the quantum dot light emitting layer includes organic solvent material and the amount being dispersed in the organic solvent material Son point material, the quanta point material include:One or more in CdS, CdSe, CdTe, ZnS, ZnSe, InAs and InP.
Specifically, the material of the source electrode, drain electrode and first electrode is one or more combinations in molybdenum, iron and aluminium, The material of the second electrode is tin indium oxide or indium zinc oxide.
Specifically, the encapsulated layer 11 is transparent, it is preferable that the encapsulated layer 11 is ultra-thin glass, with described in lifting The water oxygen barriering effect of encapsulated layer 11.
Specifically, the present invention by source-drain electrode and QLED first electrode with layer set, can reduce connection via and because Display is bad caused by via, lifts product stability, during fabrication, it is possible to reduce light shield quantity, simplification of flowsheet, reduces Production cost, product competitiveness is lifted, while the film layer quantity of QLED display panels can also be reduced, reduce QLED display panels Thickness, realize ultra-thin display.
Embodiment 2
A kind of manufacturing process of the pixel defining layer module of QLED display panels, step are as follows:
1), structure and process respectively
Pixel defining layer module, including pixel definition groove, the hole that is stacked gradually from bottom to top in pixel definition groove Implanted layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and electron injecting layer;
Every layer is manufactured according to prior art, it is then compound successively according to overlapping order;
2), pre-process
Pretreatment fluid is sprayed after compound to its outer surface, spraying terminates to dry using blast drier;
The component of pretreatment fluid is:5 parts of activated carbon, 3.3 parts of antisettling agent, 15 parts of water, 10 parts of HCPE, 0.5 part of sanguinarine;
3), subsequent treatment
Pretreated pixel defining layer module is placed in closed container, vacuumizes holding more than 24 hours, it is then extensive Multiple normal pressure further takes out.
The present invention is not limited to above-described embodiment, and embodiment is exemplary, it is intended to for explaining the present invention, and can not It is interpreted as limitation of the present invention.

Claims (1)

1. a kind of pixel defining layer module of QLED display panels, it is characterised in that including pixel definition groove, located at pixel definition Hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and the electron injection stacked gradually from bottom to top in groove Layer.
CN201710836302.6A 2017-09-16 2017-09-16 A kind of pixel defining layer module of QLED display panels Pending CN107799569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710836302.6A CN107799569A (en) 2017-09-16 2017-09-16 A kind of pixel defining layer module of QLED display panels

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710836302.6A CN107799569A (en) 2017-09-16 2017-09-16 A kind of pixel defining layer module of QLED display panels

Publications (1)

Publication Number Publication Date
CN107799569A true CN107799569A (en) 2018-03-13

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CN201710836302.6A Pending CN107799569A (en) 2017-09-16 2017-09-16 A kind of pixel defining layer module of QLED display panels

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CN (1) CN107799569A (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681773A (en) * 2013-12-27 2014-03-26 京东方科技集团股份有限公司 Organic electroluminescent display device, preparation method thereof and display device
CN105118850A (en) * 2015-09-22 2015-12-02 深圳市华星光电技术有限公司 Active matrix organic light-emitting diode substrate and display device thereof
CN105206641A (en) * 2015-10-12 2015-12-30 Tcl集团股份有限公司 QLED and TFT integrating device and manufacturing method thereof
CN105810851A (en) * 2016-05-03 2016-07-27 深圳市华星光电技术有限公司 Preparation method of quantum dot light-emitting diode display and quantum dot light-emitting diode display
CN105870154A (en) * 2016-04-28 2016-08-17 京东方科技集团股份有限公司 Array substrate and manufacturing method thereof and OLED display device
CN106935713A (en) * 2015-12-28 2017-07-07 三星显示有限公司 Organic light-emitting display device and its manufacture method
CN106960913A (en) * 2017-03-31 2017-07-18 武汉华星光电技术有限公司 Light emitting diode with quantum dots display panel and preparation method thereof
CN107111973A (en) * 2015-01-12 2017-08-29 杜比实验室特许公司 Block of pixels structure and layout

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681773A (en) * 2013-12-27 2014-03-26 京东方科技集团股份有限公司 Organic electroluminescent display device, preparation method thereof and display device
CN107111973A (en) * 2015-01-12 2017-08-29 杜比实验室特许公司 Block of pixels structure and layout
CN105118850A (en) * 2015-09-22 2015-12-02 深圳市华星光电技术有限公司 Active matrix organic light-emitting diode substrate and display device thereof
CN105206641A (en) * 2015-10-12 2015-12-30 Tcl集团股份有限公司 QLED and TFT integrating device and manufacturing method thereof
CN106935713A (en) * 2015-12-28 2017-07-07 三星显示有限公司 Organic light-emitting display device and its manufacture method
CN105870154A (en) * 2016-04-28 2016-08-17 京东方科技集团股份有限公司 Array substrate and manufacturing method thereof and OLED display device
CN105810851A (en) * 2016-05-03 2016-07-27 深圳市华星光电技术有限公司 Preparation method of quantum dot light-emitting diode display and quantum dot light-emitting diode display
CN106960913A (en) * 2017-03-31 2017-07-18 武汉华星光电技术有限公司 Light emitting diode with quantum dots display panel and preparation method thereof

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Application publication date: 20180313