CN107086272A - Preparation method, OLED and the OLED display panel of OLED - Google Patents
Preparation method, OLED and the OLED display panel of OLED Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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Abstract
The present invention provides a kind of preparation method of OLED, OLED and OLED display panel.The preparation method of the OLED of the present invention, modifying interface face is formed in the interface of solution film forming structure sheaf, will the solution film forming structure sheaf surface or the surface for another structure sheaf being in contact with the solution film forming structure sheaf, modifying interface face is set to after being handled by polar organic solvent, the laser propagation effect of carrier can be effectively improved, so as to significantly lift the general performance of OLED, and method is simple and easy to apply, have broad application prospects in the OLED using solution film-forming method.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of preparation method of OLED, OLED and OLED
Display panel.
Background technology
Organic LED display device (Organic Light Emitting Display, OLED) has spontaneous
Light, driving voltage are low, luminous efficiency is high, the response time is short, definition and contrast is high, nearly 180 ° of visual angles, temperature in use scope
Width, can be achieved many advantages, such as Flexible Displays are with large area total colouring, it is the display for most having development potentiality to be known as by industry
Device.
OLED according to type of drive can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and
Active array type OLED (Active Matrix OLED, AMOLED) two major classes, i.e. direct addressins and film transistor matrix are sought
The class of location two.Wherein, AMOLED has the pixel arranged in array, belongs to active display type, and luminous efficacy is high, is typically used as
The large scale display device of fine definition.
OLED is generally included：Substrate, the anode on substrate, the hole injection layer on anode, located at sky
Hole transmission layer on the implanted layer of cave, the luminescent layer on hole transmission layer, the electron transfer layer on luminescent layer, it is located at
Electron injecting layer on electron transfer layer and the negative electrode on electron injecting layer.The principle of luminosity of OLED is semiconductor
Material and luminous organic material pass through carrier injection and composite guide photoluminescence under electric field driven.Specifically, OLED is logical
Frequently with ITO pixel electrodes and metal electrode anode and negative electrode respectively as device, under certain voltage driving, electronics and sky
Cave is injected into electron transfer layer and hole transmission layer from negative electrode and anode respectively, electronics and hole respectively through electron transfer layer and
Hole transmission layer moves to luminescent layer, and is met in luminescent layer, forms exciton and excites light emitting molecule, the latter is through overshoot
Relaxation and send visible ray.
At present, multiple structure sheafs in OLED can be prepared using the method for solution film forming, and this method need not
Expensive vacuum equipment, can be achieved low price, it is adaptable to large-size glass substrate, and production efficiency is high, with good development prospect.
In the OLED processed using liquor membrane formation process, the interface between each structure sheaf has important shadow for the efficiency of device
Ring, particularly between organic active layer and electrode, if it is possible to introduce suitable interface-modifying layer, or to organic active layer
Suitably modify or handle, be capable of the general performance of significantly boost device.
The content of the invention
It is an object of the invention to provide a kind of preparation method of OLED, the entirety of OLED can be significantly lifted
Performance, and method is simple and easy to apply, has broad application prospects in the OLED using solution film-forming method.
The present invention also aims to provide a kind of OLED, it is made using the preparation method of above-mentioned OLED,
Performance is high, and preparation method is simple.
The present invention also aims to provide a kind of OLED display panel, using above-mentioned OLED, OLED
Can be high, and preparation method is simple.
To achieve the above object, the present invention provides a kind of preparation method of OLED, and the OLED includes stacking
The multiple structure sheafs set, the structure setting of each structure sheaf correspondence OLED is anode, hole injection layer, hole transport
Layer, luminescent layer, electron transfer layer, electron injecting layer or negative electrode, wherein at least one structure sheaf are modification structure layer, described to repair
Decorations structure sheaf has a modifying interface face, each modification structure layer and be in contact with the modifying interface face of modification structure layer it is another
At least one in one structure sheaf is the solution film forming structure sheaf prepared using solution film-forming method；
The preparation method in modification structure layer and its modifying interface face is：
Polar organic solvent is provided, the polar organic solvent is alcohols, carboxylic acids or organic solvent of ketone；Will be described
Polar organic solvent is coated in the OLED on the surface of corresponding construction layer, then dries the removal polarity organic molten
Agent, modification structure layer is obtained by corresponding construction layer, and the surface for being applied the polar organic solvent by corresponding construction layer is obtained
To modifying interface face.
The long alkyl chains of the polar organic solvent are less than 4.
It is by the way of spin coating, ink jet printing or blade coating that the polarity is organic during modifying interface face is made
Solvent is coated on the surface of corresponding construction layer.
During modifying interface face is made, dried using the method for vacuum drying or heat drying and remove the pole
Property organic solvent.
The preparation method of described OLED, specifically includes following steps：
Step S1, formed anode, hole injection layer is formed on the anode using solution film-forming method, using solution into
Film method forms luminescent layer on the hole injection layer；
Step S2, offer polar organic solvent, are coated with the polar organic solvent, so on the upper surface of the luminescent layer
Dry afterwards and remove the polar organic solvent, the luminescent layer is turned into modification structure layer so that the upper surface of the luminescent layer
As modifying interface face；
Step S3, on the modifying interface face of the luminescent layer electron injecting layer is formed, the shape on the electron injecting layer
Into negative electrode.
In the step S1, the anode is formed using the method for magnetron sputtering, the material of the anode is electrically conducting transparent
Metal oxide；
In the step S1, the material of the hole injection layer is PEDOT:PSS, the preparation method of the hole injection layer
Specially：PEDOT is provided:The PSS aqueous solution, by the PEDOT:The PSS aqueous solution is coated on the surface of the anode, treats that moisture is waved
After hair, hole injection layer is formed；
In the step S1, the preparation method of the luminescent layer is specially：There is provided luminescent material, by the luminescent material with
After solvent mixing, mixed solution is obtained, the mixed solution is coated on the hole injection layer, after the solvent is volatilized, formed
Luminescent layer, wherein, the luminescent material includes poly- (9,9- dioctyl fluorene -2,7- diyl)；
The polar organic solvent provided in the step S2 is methanol；
In the step S3, the electron injecting layer and negative electrode are formed using the method for vacuum evaporation；The electron injection
The material of layer includes lithium fluoride；The material of the negative electrode includes aluminium.
The present invention also provides a kind of OLED, including the multiple structure sheafs being stacked, each structure sheaf correspondence OLED
The structure setting of device is anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer or the moon
Pole, wherein at least one structure sheaf is modification structure layer, and the modification structure layer has modifying interface face, each modification structure
At least one in layer and another structure sheaf being in contact with the modifying interface face of modification structure layer is to use solution film forming side
Solution film forming structure sheaf prepared by method；
The modification structure layer passes through the structure sheaf that polar organic solvent is treated for surface, and its modifying interface face is repaiied for this
Adorn structure sheaf and pass through the surface that polar organic solvent is treated, the polar organic solvent is that alcohols, carboxylic acids or ketone are organic
Solvent.
The long alkyl chains of the polar organic solvent are less than 4.
The present invention also provides a kind of OLED display panel, including several OLEDs as described above.
Described OLED display panel, in addition to underlay substrate, the pixel defining layer on the underlay substrate and set
In in the pixel defining layer and spaced several through holes；Several OLEDs are respectively arranged on several through holes
It is interior.
Beneficial effects of the present invention：The preparation method of the OLED of the present invention, in the interface of solution film forming structure sheaf
Form modifying interface face, will the solution film forming structure sheaf surface or another knot for being in contact with the solution film forming structure sheaf
The surface of structure layer, is set to modifying interface face, can be effectively improved the laser propagation effect of carrier after being handled by polar organic solvent,
So as to significantly lift the general performance of OLED, and method is simple and easy to apply, in the OLED devices using solution film-forming method
Have broad application prospects in part.The OLED of the present invention, is made using the preparation method of above-mentioned OLED, can be effective
Improve the laser propagation effect of carrier, OLED performance is high, and preparation method is simple.The OLED display panel of the present invention, is used
Above-mentioned OLED, can be effectively improved the laser propagation effect of carrier in OLED, OLED performance is high, and preparation method
Simply.
In order to be able to be further understood that the feature and technology contents of the present invention, refer to below in connection with the detailed of the present invention
Illustrate and accompanying drawing, however accompanying drawing only provide with reference to and explanation use, not for being any limitation as to the present invention.
Brief description of the drawings
Below in conjunction with the accompanying drawings, it is described in detail by the embodiment to the present invention, technical scheme will be made
And other beneficial effects are apparent.
In accompanying drawing,
Fig. 1 is makes the schematic diagram in modifying interface face in the preparation method of the OLED of the present invention；
Fig. 2 is the schematic flow sheet of the preferred embodiment of the preparation method of the OLED of the present invention；
Fig. 3 is the step S1 of the preferred embodiment of the preparation method of the OLED of present invention schematic diagram；
Fig. 4-5 is the step S2 of the preferred embodiment of the preparation method of the OLED of present invention schematic diagram；
Schematic diagram and the present invention that Fig. 6 is the step S3 of the preferred embodiment of the preparation method of the OLED of the present invention
The structural representation of the preferred embodiment of OLED；
Fig. 7 for the present invention OLED display panel preferred embodiment in several OLEDs preparation method the step of
S10 schematic diagram；
Fig. 8-9 for the present invention OLED display panel preferred embodiment in several OLEDs preparation method the step of
S20 schematic diagram；
Figure 10 for the present invention OLED display panel preferred embodiment in several OLEDs preparation method the step of
The structural representation of S30 schematic diagram and the preferred embodiment of the OLED display panel of the present invention.
Embodiment
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with being preferable to carry out for the present invention
Example and its accompanying drawing are described in detail.
Referring to Fig. 1, present invention firstly provides a kind of preparation method of OLED, the OLED is set including stacking
The multiple structure sheafs 26 put, the structure setting of each correspondence of structure sheaf 26 OLED is anode, hole injection layer, hole transport
Layer, luminescent layer, electron transfer layer, electron injecting layer or negative electrode, wherein at least one structure sheaf 26 are modification structure layer, described
Modification structure layer connects with modifying interface face 50, each modification structure layer and with the modifying interface face 50 of modification structure layer
At least one in tactile another structure sheaf 26 is the solution film forming structure sheaf prepared using solution film-forming method；
The preparation method in modification structure layer and its modifying interface face 50 is：
Polar organic solvent is provided, the polar organic solvent is alcohols, carboxylic acids or organic solvent of ketone；Will be described
Polar organic solvent is coated in the OLED on the surface of corresponding construction layer 26, then dries the removal polarity organic
Solvent, modification structure layer is obtained by corresponding construction layer 26, and the polar organic solvent is applied by corresponding construction layer 26
Surface obtains modifying interface face 50.
Specifically, the long alkyl chains of the polar organic solvent are less than 4, and the polar organic solvent at least contains
One corresponding function substituted radical, the function substituted radical is hydroxyl (- OH), carboxyl (- COOH) or ketone group (- CO-) etc.
Group, for example, the polar organic solvent of alcohols at least includes a hydroxyl, the polar organic solvent of carboxylic acids at least includes one
Carboxyl, the polar organic solvent of ketone at least includes a ketone group.
Specifically, during modifying interface face 50 is made, using spin coating (Spin Coating), ink jet printing
The polar organic solvent is coated on corresponding construction by the mode of (Inkjet Printing) or blade coating (Blade Coating)
On the surface of layer 26.
Specifically, during modifying interface face 50 is made, dried and gone using the method for vacuum drying or heat drying
Except the polar organic solvent.
Specifically, as shown in Fig. 2 the preferred embodiment of the preparation method for the OLED of the present invention, including following step
Suddenly：
Step S1, as shown in figure 3, forming anode 21, forms on the anode 21 hole using solution film-forming method and notes
Enter layer 22, luminescent layer 23 is formed on the hole injection layer 22 using solution film-forming method.
Specifically, in the step S1, the anode 21, the material of the anode 21 are formed using the method for magnetron sputtering
For transparent conductive metal oxide, preferably tin indium oxide (Indium Tin Oxide, ITO).
Specifically, the thickness of the anode 21 is 20nm-200nm.
Specifically, in the step S1, the material of the hole injection layer 22 is PEDOT:PSS, the hole injection layer
22 preparation method is specially：PEDOT is provided:The PSS aqueous solution, by the PEDOT:The PSS aqueous solution is coated on the anode 21
Surface, after after moisture evaporation, form hole injection layer 22.
Specifically, the thickness of the hole injection layer 22 is 1nm-100nm.
Specifically, in the step S1, the luminescent layer 23 is blue light-emitting, and its preparation method is specially：Hair is provided
Luminescent material, after the luminescent material is mixed with solvent, obtains mixed solution, and the mixed solution is coated on into the hole injects
On layer 22, after the solvent is volatilized, luminescent layer 23 is formed, wherein, the luminescent material includes poly- (9,9- dioctyl fluorenes -2,7- bis-
Base) (Poly (9,9-di-noctylfluorenyl-2,7-diyl), PFO)；Poly- (the 9,9- dioctyl fluorene -2,7- diyls)
For blue emitting material.
Specifically, the thickness of the luminescent layer 23 is 1nm-100nm.
Step S2, as illustrated in figures 4-5 there is provided polar organic solvent, be coated with the upper surface of the luminescent layer 23 described
Polar organic solvent, then dries and removes the polar organic solvent, the luminescent layer 23 is turned into modification structure layer so that institute
Stating the upper surface of luminescent layer 23 turns into modifying interface face 50.
Specifically, the polar organic solvent provided in the step S2 is methanol.
Step S3, as shown in fig. 6, on the modifying interface face 50 of the luminescent layer 23 formed electron injecting layer 24, in institute
State formation negative electrode 25 on electron injecting layer 24.
Specifically, in the step S3, the electron injecting layer 24 and negative electrode 25 are formed using the method for vacuum evaporation；Institute
Stating the material of electron injecting layer 24 includes lithium fluoride (Lithium Fluoride, LiF), and the material of the negative electrode 25 includes aluminium.
Specifically, the thickness of the electron injecting layer 24 is 0.5nm-10nm, and the thickness of the negative electrode 25 is 50nm-
1000nm。
The preparation method of the OLED of the present invention, modifying interface face 50 is formed in the interface of solution film forming structure sheaf,
Will the solution film forming structure sheaf surface or the surface for another structure sheaf 26 being in contact with the solution film forming structure sheaf, lead to
Modifying interface face 50 is set to after crossing polar organic solvent processing, the laser propagation effect of carrier can be effectively improved, so as to notable
Ground lifts the general performance of OLED, and method is simple and easy to apply, has wide in the OLED using solution film-forming method
Application prospect.
Based on the preparation method of above-mentioned OLED, the present invention also provides a kind of OLED, using as described above
The preparation method of OLED is made, including the multiple structure sheafs 26 being stacked, each correspondence of structure sheaf 26 OLED
Structure setting be anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer or negative electrode, wherein
At least one structure sheaf 26 is modification structure layer, and modification structure layer has a modifying interface face 50, each modification structure layer and
At least one in another structure sheaf 26 being in contact with the modifying interface face 50 of modification structure layer is to use solution film forming side
Solution film forming structure sheaf prepared by method；
The modification structure layer passes through the structure sheaf 26 that polar organic solvent is treated for surface, and its modifying interface face 50 is
The surface that modification structure layer is treated by polar organic solvent, the polar organic solvent is alcohols, carboxylic acids or ketone
Organic solvent.
Specifically, the long alkyl chains of the polar organic solvent are less than 4.
Specifically, as shown in fig. 6, be the present invention OLED preferred embodiment, its structure include from the bottom to top according to
Anode 21, hole injection layer 22, luminescent layer 23, electron injecting layer 24 and the negative electrode 25 of secondary setting, wherein, the luminescent layer 23
For modification structure layer, the upper surface of the luminescent layer 23 is modifying interface face 50.
Specifically, the material of the anode 21 is tin indium oxide, and thickness is 20nm-200nm.
Specifically, the material of the hole injection layer 22 is PEDOT:PSS, thickness is 1nm-100nm.
Specifically, the luminescent layer 23 is blue light-emitting, and its material includes poly- (9,9- dioctyl fluorene -2,7- diyl),
Thickness is 1nm-100nm.
Specifically, the upper surface of the luminescent layer 23 turns into modifying interface face 50 after methyl alcohol process.
Specifically, the material of the electron injecting layer 24 includes lithium fluoride, and thickness is 0.5nm-10nm.
Specifically, the material of the negative electrode 25 includes aluminium, and thickness is 50nm-1000nm.
Based on above-mentioned OLED, the present invention also provides a kind of OLED display panel, including several as described above
OLED 20, i.e., described several OLEDs 20 are made using the preparation method of the OLED of the present invention.
Specifically, described OLED display panel, in addition to underlay substrate 10, the pixel on the underlay substrate 10
Definition layer 30 and in the pixel defining layer 30 and spaced several through holes 31；20 points of several OLEDs
She Yu not be in several through holes 31.
Specifically, in the preferred embodiment of OLED display panel of the invention several OLEDs 20 preparation method, bag
Include following steps：
Step S10, as shown in Figure 7 there is provided underlay substrate 10, the underlay substrate 10 is provided with pixel defining layer 30, institute
State and several through holes 31 are arranged at intervals with pixel defining layer 30, form several anodes 21 respectively in several through holes 31, adopt
Several hole injection layers 22 are formed respectively on several anodes 21 with solution film-forming method, using solution film-forming method in institute
State and form several luminescent layers 23 on several hole injection layers 22 respectively.
Specifically, in the step S10, the anode 21, the material of the anode 21 are formed using the method for magnetron sputtering
Expect for transparent conductive metal oxide, preferably tin indium oxide.
Specifically, the thickness of the anode 21 is 20nm-200nm.
Specifically, in the step S10, the material of the hole injection layer 22 is PEDOT:PSS, the hole injection layer
22 preparation method is specially：PEDOT is provided:The PSS aqueous solution, by the PEDOT:The PSS aqueous solution is coated on the anode 21
Surface, after after moisture evaporation, form hole injection layer 22.
Specifically, the thickness of the hole injection layer 22 is 1nm-100nm.
Specifically, in the step S10, the luminescent layer 23 is blue light-emitting, and its preparation method is specially：Hair is provided
Luminescent material, after the luminescent material is mixed with solvent, obtains mixed solution, and the mixed solution is coated on into the hole injects
On layer 22, after the solvent is volatilized, luminescent layer 23 is formed, wherein, the luminescent material includes poly- (9,9- dioctyl fluorenes -2,7- bis-
Base)；Poly- (the 9,9- dioctyl fluorene -2,7- diyls) is blue emitting material.
Specifically, the thickness of the luminescent layer 23 is 1nm-100nm.
Step S20, as Figure 8-9 there is provided polar organic solvent, on the upper surface of several luminescent layers 23 be coated with
The polar organic solvent, then dries and removes the polar organic solvent, several luminescent layers 23 is turned into modification structure
Layer so that the upper surface of several luminescent layers 23 turns into modifying interface face 50.
Specifically, the polar organic solvent provided in the step S20 is methanol.
Step S30, as shown in Figure 10, form several electronics respectively on the modifying interface face 50 of several luminescent layers 23
Implanted layer 24, several negative electrodes 25 are formed on several electron injecting layers 24 respectively, so as to obtain several OLEDs 20.
Specifically, in the step S30, the electron injecting layer 24 and negative electrode 25 are formed using the method for vacuum evaporation；
The material of the electron injecting layer 24 includes lithium fluoride, and the material of the negative electrode 25 includes aluminium.
Specifically, the thickness of the electron injecting layer 24 is 0.5nm-10nm, and the thickness of the negative electrode 25 is 50nm-
1000nm。
In summary, the preparation method of OLED of the invention, interface is formed in the interface of solution film forming structure sheaf
Modification face, will the solution film forming structure sheaf surface or the table for another structure sheaf being in contact with the solution film forming structure sheaf
Face, is set to modifying interface face after being handled by polar organic solvent, can be effectively improved the laser propagation effect of carrier, so as to aobvious
The general performance of ground lifting OLED is write, and method is simple and easy to apply, there is wide in the OLED using solution film-forming method
Wealthy application prospect.The OLED of the present invention, is made using the preparation method of above-mentioned OLED, can be effectively improved current-carrying
The laser propagation effect of son, OLED performance is high, and preparation method is simple.The OLED display panel of the present invention, using above-mentioned
OLED, can be effectively improved the laser propagation effect of carrier in OLED, OLED performance is high, and preparation method is simple.
It is described above, for the person of ordinary skill of the art, can be with technique according to the invention scheme and technology
Other various corresponding changes and deformation are made in design, and all these changes and deformation should all belong to the claims in the present invention
Protection domain.
Claims (10)
1. a kind of preparation method of OLED, it is characterised in that the OLED includes the multiple structure sheafs being stacked
(26), the structure setting of each structure sheaf (26) correspondence OLED be anode, hole injection layer, hole transmission layer, luminescent layer,
Electron transfer layer, electron injecting layer or negative electrode, wherein at least one structure sheaf (26) are modification structure layer, the modification structure
What layer was in contact with modifying interface face (50), each modification structure layer and with the modifying interface face (50) of modification structure layer
At least one in another structure sheaf (26) is the solution film forming structure sheaf prepared using solution film-forming method；
The preparation method of modification structure layer and its modifying interface face (50) is：
Polar organic solvent is provided, the polar organic solvent is alcohols, carboxylic acids or organic solvent of ketone；By the polarity
Organic solvent is coated in the OLED on the surface of corresponding construction layer (26), then dries the removal polarity organic molten
Agent, obtains modification structure layer by corresponding construction layer (26), the polar organic solvent is applied by corresponding construction layer (26)
Surface obtain modifying interface face (50).
2. the preparation method of OLED as claimed in claim 1, it is characterised in that the alkyl chain of the polar organic solvent
Length is less than 4.
3. the preparation method of OLED as claimed in claim 1, it is characterised in that making the mistake of modifying interface face (50)
The polar organic solvent, is coated on the table of corresponding construction layer (26) by Cheng Zhong by the way of spin coating, ink jet printing or blade coating
On face.
4. the preparation method of OLED as claimed in claim 1, it is characterised in that making the mistake of modifying interface face (50)
Cheng Zhong, is dried using the method for vacuum drying or heat drying and removes the polar organic solvent.
5. the preparation method of OLED as claimed in claim 1, it is characterised in that specifically include following steps：
Step S1, formation anode (21), form hole injection layer (22) using solution film-forming method on the anode (21), adopt
Luminescent layer (23) is formed on the hole injection layer (22) with solution film-forming method；
Step S2, offer polar organic solvent, are coated with the polar organic solvent, so on the upper surface of the luminescent layer (23)
Dry afterwards and remove the polar organic solvent, the luminescent layer (23) is turned into modification structure layer so that the luminescent layer (23)
Upper surface turn into modifying interface face (50)；
Step S3, on the modifying interface face (50) of the luminescent layer (23) electron injecting layer (24) is formed, in electronics note
Enter and negative electrode (25) is formed on layer (24).
6. the preparation method of OLED as claimed in claim 5, it is characterised in that in the step S1, splashed using magnetic control
The method penetrated forms the anode (21), and the material of the anode (21) is transparent conductive metal oxide；
In the step S1, the material of the hole injection layer (22) is PEDOT:PSS, the preparation of the hole injection layer (22)
Method is specially：PEDOT is provided:The PSS aqueous solution, by the PEDOT:The PSS aqueous solution is coated on the surface of the anode (21),
After after moisture evaporation, hole injection layer (22) is formed；
In the step S1, the preparation method of the luminescent layer (23) is specially：There is provided luminescent material, by the luminescent material with
After solvent mixing, mixed solution is obtained, the mixed solution is coated on the hole injection layer (22), after the solvent is volatilized,
Luminescent layer (23) is formed, wherein, the luminescent material includes poly- (9,9- dioctyl fluorene -2,7- diyl)；
The polar organic solvent provided in the step S2 is methanol；
In the step S3, the electron injecting layer (24) and negative electrode (25) are formed using the method for vacuum evaporation；The electronics
The material of implanted layer (24) includes lithium fluoride；The material of the negative electrode (25) includes aluminium.
7. a kind of OLED, it is characterised in that including the multiple structure sheafs (26) being stacked, each structure sheaf (26) correspondence
The structure setting of OLED be anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer,
Or negative electrode, wherein at least one structure sheaf (26) is modification structure layer, and the modification structure layer has modifying interface face (50), often
At least one in one modification structure layer and another structure sheaf (26) being in contact with the modifying interface face (50) of modification structure layer
Individual is the solution film forming structure sheaf prepared using solution film-forming method；
The modification structure layer passes through the structure sheaf (26) that polar organic solvent is treated for surface, and its modifying interface face (50) is
The surface that modification structure layer is treated by polar organic solvent, the polar organic solvent is alcohols, carboxylic acids or ketone
Organic solvent.
8. OLED as claimed in claim 7, it is characterised in that the long alkyl chains of the polar organic solvent are less than 4.
9. a kind of OLED display panel, it is characterised in that including several OLEDs (20) as claimed in claim 7.
10. OLED display panel as claimed in claim 9, it is characterised in that also including underlay substrate (10), located at the lining
Pixel defining layer (30) on substrate (10) and in the pixel defining layer (30) and spaced several through holes
(31)；Several OLEDs (20) are respectively arranged in several through holes (31).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710289219.1A CN107086272A (en) | 2017-04-27 | 2017-04-27 | Preparation method, OLED and the OLED display panel of OLED |
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| CN201710289219.1A CN107086272A (en) | 2017-04-27 | 2017-04-27 | Preparation method, OLED and the OLED display panel of OLED |
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| CN107086272A true CN107086272A (en) | 2017-08-22 |
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| CN201710289219.1A Pending CN107086272A (en) | 2017-04-27 | 2017-04-27 | Preparation method, OLED and the OLED display panel of OLED |
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| WO2021088118A1 (en) * | 2019-11-08 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel and oled display device |
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Application publication date: 20170822 |