CN103579520B - Organic light emitting diodde desplay device - Google Patents

Organic light emitting diodde desplay device Download PDF

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Publication number
CN103579520B
CN103579520B CN201210265786.0A CN201210265786A CN103579520B CN 103579520 B CN103579520 B CN 103579520B CN 201210265786 A CN201210265786 A CN 201210265786A CN 103579520 B CN103579520 B CN 103579520B
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layer
light emitting
organic light
antireflection layer
diodde desplay
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CN103579520A (en
Inventor
邱勇
张粲
刘嵩
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Tsinghua University
Beijing Visionox Technology Co Ltd
Kunshan Visionox Display Co Ltd
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Tsinghua University
Beijing Visionox Technology Co Ltd
Kunshan Visionox Display Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass

Abstract

The invention discloses a kind of organic light emitting diodde desplay device, including anode, hole transmission layer, organic luminous layer, electron transfer layer, electron injecting layer and negative electrode, described cathode outer side is provided with antireflection layer, and the material that described antireflection layer is more than or equal to 2.4 by refractive index is made.The organic light emitting diodde desplay device of the present invention, by preparing one layer of antireflection layer, the distribution of reflection and transmission potential to change light on translucent metal level, increases the luminous flux of transmission light.Further, by selecting the refractive index material more than or equal to 2.4 to make antireflection layer, can effectively reduce the color change with visual angle of display device, thus improve the display quality of display device.

Description

Organic light emitting diodde desplay device
Technical field
The present invention relates to organic light emission two Manifold technology field, specifically, be a kind of organic light emitting diodde desplay device.
Background technology
Organic Light Emitting Diode (OLED) display device is divided into bottom emitting device and top emitting device according to going out light mode.Bottom emitting organic light emitting diodde desplay device (BOLED), it is as the indium tin oxide ITO(or indium-zinc oxide IZO of transparent anode) by sputtering by the way of grow on a glass substrate, the light that device inside sends is in succession through ITO(or IZO), glass substrate injection.Adopting the display screen made in this way and to be produced on above glass due to drive circuit and viewing area simultaneously, cause viewing area area relatively reduced, the aperture opening ratio of display screen reduces.Compared with common bottom emitting device, top emitting organic light emitting diodde desplay device (TEOLED) is due to the design feature of itself, light can penetrate from top electrodes, in active matrix driving OLED, pixel-driving circuit, bus etc. can be produced on the lower section of viewing area, thus avoiding the problem that drive circuit competes with one another for viewing area so that the aperture opening ratio of device is greatly improved.Top emitting device can also be produced in silicon-based substrate, thus can be made into micro-display on silicon.Owing to the display screen of top emitting element manufacturing also has resolution ratio height, information content advantages of higher, this all makes top emitting device be paid close attention to by more and more people over the past two years, and becomes a study hotspot.
In top emitting device, generally use transparent ITO(or IZO) or translucent metal as top cathode.Owing to making ITO(or IZO) need to use the method for sputtering, high energy ITO(or IZO) particle is the strongest for the organic layer destructiveness of bottom, the leakage current causing device is very big, and therefore preferably replacement scheme is to use translucent metal to substitute ITO(or IZO) as top cathode.Its advantage is easily growth, destructive little；Shortcoming is that the light transmission of metal is poor, is unfavorable for the coupling output of light, and microcavity effect is more obvious, and in the application of display, luminous intensity and color are maximum problems with the change at visual angle.
Publication No. CN101944570, in the Chinese invention patent application of entitled " OLED and manufacture method thereof ", employs triamine derivative, arlydene diamine derivative, CBP, AlQ3As organic coating layer to increase the efficiency of emergent light, and limit the thickness of this organic layer as 30nm-90nm.Although the program obtains the exiting light beam intensity of maximum, but does not considers due to the change of color under the different visual angles that microcavity effect causes.
And Publication No. CN101599536, in the Chinese invention patent application of entitled " organic light emitting diode display device ", mention the double-deck refracting layer of use, improve optical coupling output, proposition ground floor refractive index is between 1.4-1.8, and the refractive index of second layer refracting layer is 1.1 times of ground floor.Wherein first refractive layer and the second refracting layer include niobium oxide Nb2O5, tantalum oxide Ta2O5, titanium oxide Ti2O5, silicon nitride SixNy, silicon oxide sio2, antimony oxide Sb2O3, aluminium oxide Al2O3, zirconium oxide ZrO2, magnesia MgO, hafnium oxide HfO2Or synthetic polymer.Improve the efficiency of device, but still the color of unresolved device is with the problem of visual angle change.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of organic light emitting diodde desplay device, can effectively solve the color problem with visual angle change.
In order to solve above-mentioned technical problem, the invention provides a kind of organic light emitting diodde desplay device, including anode, hole transmission layer, organic luminous layer, electron transfer layer, electron injecting layer and negative electrode, described cathode outer side is provided with antireflection layer, and the material that described antireflection layer is more than or equal to 2.4 by refractive index is made.
Further, the refractive index of described antireflection layer is more than or equal to 2.4 and less than or equal to 2.8.
Further, the refractive index of described antireflection layer is more than or equal to 2.4 and less than or equal to 2.6.
Further, the thickness of described antireflection layer is 20nm ~ 80nm.
Further, the thickness of described antireflection layer is 30nm ~ 50nm.
Further, the material of described antireflection layer is selected from Bi2O3, Cr2O3, B2O3, TiO2, ZrO2, ZnTe, ZnSe, ZnS and ZnO one of them.
Further, it is additionally provided with hole injection layer between described anode and hole transmission layer.
Further, indium tin oxide layer or indium-zinc oxide layer it are additionally provided with between described anode and hole injection layer.
The organic light emitting diodde desplay device of the present invention, by preparing one layer of antireflection layer, the distribution of reflection and transmission potential to change light on translucent metal level, increases the luminous flux of transmission light.Further, by selecting the refractive index material more than or equal to 2.4 to make antireflection layer, can effectively reduce the color change with visual angle of display device, thus improve the display quality of display device.
Accompanying drawing explanation
Fig. 1 is the structural representation of organic light emitting diodde desplay device one embodiment of the present invention.
In figure: 1. anode, 2. Indium tin oxide layer, 3. hole injection layer, 4. hole transmission layer, 5. organic luminous layer, 6. electron transfer layer, 7. electron injecting layer, 8. negative electrode, 9. antireflection layer.
Detailed description of the invention
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, so that those skilled in the art can be better understood from the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
The organic light emitting diodde desplay device of the present invention, it substantially constitutes and includes anode (Anode), hole transmission layer (Hole Transport Layer, HTL), organic luminous layer (Emitting Material Layer, EML), electron transfer layer (Electron Transport Layer, ETL), electron injecting layer (Electron Inject Layer, EIL) and negative electrode (Cathode), the present invention is to arrange at least one of which antireflection layer in the outside of negative electrode, and antireflection layer is made up of the refractive index material more than or equal to 2.4.The refractive index of antireflection layer is the highest, and its viewing angle characteristic is the best, but refractive index is too high can produce bend loss, affects the luminous efficiency of device.Therefore, the refractive index of antireflection layer is to be advisable more than or equal to 2.4 and less than or equal to 2.8, and more than or equal to 2.4 and less than or equal to 2.6 is optimal with refractive index.Furthermore it is possible to increase hole injection layer (Hole Inject Layer, HIL) between anode and hole transmission layer, it is also possible to increase indium tin oxide ITO layer or indium-zinc oxide IZO layer between anode and hole injection layer.
The thickness of antireflection layer can affect the light transmittance of transparency electrode, but is not that light transmittance optimum efficiency is the highest, and between 20nm to 80nm preferably, the preferred thickness of described antireflection layer is 30nm ~ 50nm to the thickness of antireflection layer.
The structural representation of organic light emitting diodde desplay device one embodiment of the present invention as shown in Figure 1.In this reality embodiment, organic light emitting diodde desplay device includes anode 1, indium tin oxide layer 2, hole injection layer 3, hole transmission layer 4, organic luminous layer 5, electron transfer layer 6, electron injecting layer 7, negative electrode 8 and antireflection layer 9 successively.In the present embodiment, anode and negative electrode all use metallic Silver material.Certainly, need to arrange insulating barrier between each transport layer and electrode.
For making the material of antireflection layer, as long as the material that general refractive index is more than 2.4, such as, Bi can be selected from2O3, Cr2O3, B2O3, TiO2, ZrO2, ZnTe, ZnSe, ZnS and ZnO one of them.
It is exemplified below several specific embodiment so that the viewing angle characteristic of the present invention to be described.
Embodiment 1: with ZnSe material that refractive index is 2.58 in ruddiness for the antireflection layer of red device, its device architecture is: Ag/ITO/HIL/HTL/EML/ETL/EIL/Ag/ZnSe, wherein the thickness of ZnSe antireflection layer is 40nm, and its glow color with the situation of change at visual angle is:
CIEx CIEy
0° 0.6750 0.3247
30° 0.6716 0.3281
45° 0.6673 0.3324
60° 0.6617 0.3380
Embodiment 2: be the Bi of 2.45 with refractive index2O3Material is for the antireflection layer of red device in ruddiness, and its device architecture is: Ag/ITO/HIL/HTL/EML/ETL/EIL/Ag/ Bi2O3, wherein Bi2O3The thickness of antireflection layer is 40nm, and its glow color with the situation of change at visual angle is:
CIEx CIEy
0° 0.6739 0.3259
30° 0.6700 0.3297
45° 0.6663 0.3331
60° 0.6603 0.3382
As embodiment 1 and the comparative example of embodiment 2, the LiF using refractive index to be 1.4 is for the antireflection layer of red device, its device architecture is: Ag/ITO/HIL/HTL/EML/ETL/EIL/Ag/LiF, the thickness of its LiF antireflection layer is similarly 40nm, and its glow color with the situation of change at visual angle is:
CIEx CIEy
0° 0.6714 0.3286
30° 0.6655 0.3340
45° 0.6432 0.3501
60° 0.6098 0.3850
Embodiment 3: using refractive index is the TiO of 2.42Material is for the antireflection layer of green device in green glow, and its device architecture is: Ag/ITO/HIL/HTL/EML/ETL/EIL/Ag/TiO2, wherein TiO2The thickness of antireflection layer is 80nm, and its glow color with the situation of change at visual angle is:
CIEx CIEy
0° 0.1760 0.7186
30° 0.1713 0.7068
45° 0.1706 0.6996
60° 0.1713 0.6915
Embodiment 4: use refractive index be the ZnTe material of 2.8 in green glow for the antireflection layer of green device, its device architecture is: Ag/ITO/HIL/HTL/EML/ETL/EIL/Ag/ZnTe, wherein the thickness of ZnTe antireflection layer is 80nm, and its glow color with the situation of change at visual angle is:
CIEx CIEy
0° 0.1716 0.7162
30° 0.1651 0.7059
45° 0.1640 0.6952
60° 0.1646 0.6860
As the comparative example of embodiment 3,4, using refractive index is the AlQ of 1.753For the antireflection layer of green device, its device architecture is: Ag/ITO/HIL/HTL/EML/ETL/EIL/Ag/AlQ3, its AlQ3The thickness of antireflection layer is similarly 80nm, and its glow color with the situation of change at visual angle is:
CIEx CIEy
0° 0.1899 0.7251
30° 0.1553 0.7122
45° 0.1420 0.6846
60° 0.1401 0.6647
As seen from the above-described embodiment, the viewing angle properties of the organic light emitting diodde desplay device of the present invention is far above the performance using the refractive index material less than 2.4 to make antireflection layer.
Embodiment described above is only the preferred embodiment lifted by absolutely proving the present invention, and protection scope of the present invention is not limited to this.The equivalent that those skilled in the art are made on the basis of the present invention substitutes or conversion, all within protection scope of the present invention.Protection scope of the present invention is as the criterion with claims.

Claims (6)

1. an organic light emitting diodde desplay device, including anode (1), hole transmission layer (4), organic luminous layer (5), electron transfer layer (6), electron injecting layer (7) and negative electrode (8), it is characterized in that, described cathode outer side is provided with antireflection layer (9), and the material that described antireflection layer (9) is more than or equal to 2.45 by refractive index is made；The thickness of described antireflection layer (9) is 20nm ~ 80nm；The material of described antireflection layer (9) is selected from Bi2O3, Cr2O3, B2O3, ZrO2, ZnTe and ZnSe one of them.
Organic light emitting diodde desplay device the most according to claim 1, it is characterised in that the refractive index of described antireflection layer (9) is more than or equal to 2.45 and less than or equal to 2.8.
Organic light emitting diodde desplay device the most according to claim 2, it is characterised in that the refractive index of described antireflection layer (9) is more than or equal to 2.45 and less than or equal to 2.6.
Organic light emitting diodde desplay device the most according to claim 1, it is characterised in that the thickness of described antireflection layer (9) is 30nm ~ 50nm.
Organic light emitting diodde desplay device the most according to claim 1, it is characterised in that be additionally provided with hole injection layer (3) between described anode (1) and hole transmission layer (4).
Organic light emitting diodde desplay device the most according to claim 5, it is characterised in that be additionally provided with indium tin oxide layer (2) or indium-zinc oxide layer between described anode (1) and hole injection layer (3).
CN201210265786.0A 2012-07-30 2012-07-30 Organic light emitting diodde desplay device Active CN103579520B (en)

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CN109690803B (en) 2016-09-02 2021-04-13 3M创新有限公司 Display stack including emissive display and color correction film
US11024651B2 (en) 2017-01-20 2021-06-01 Sony Semiconductor Solutions Corporation Display device and electronic device with microlens array and light emitting element substrates bonded by adhesive layer
CN109962165B (en) 2017-12-22 2020-09-01 昆山国显光电有限公司 Organic electroluminescent device
CN108134012B (en) * 2018-01-03 2020-05-22 上海天马有机发光显示技术有限公司 Organic light emitting diode, organic light emitting display panel and display device
CN110634931A (en) * 2019-09-27 2019-12-31 昆山国显光电有限公司 Display panel and display device

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