CN108134012B - Organic light emitting diode, organic light emitting display panel and display device - Google Patents
Organic light emitting diode, organic light emitting display panel and display device Download PDFInfo
- Publication number
- CN108134012B CN108134012B CN201810003937.2A CN201810003937A CN108134012B CN 108134012 B CN108134012 B CN 108134012B CN 201810003937 A CN201810003937 A CN 201810003937A CN 108134012 B CN108134012 B CN 108134012B
- Authority
- CN
- China
- Prior art keywords
- electron transport
- transport layer
- layer
- light emitting
- organic light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005540 biological transmission Effects 0.000 claims abstract description 35
- 238000002347 injection Methods 0.000 claims abstract description 17
- 239000007924 injection Substances 0.000 claims abstract description 17
- 230000005525 hole transport Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 28
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 7
- 150000001340 alkali metals Chemical class 0.000 claims description 7
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 7
- 229910001507 metal halide Inorganic materials 0.000 claims description 6
- 150000005309 metal halides Chemical class 0.000 claims description 6
- 150000002909 rare earth metal compounds Chemical class 0.000 claims description 6
- 125000002524 organometallic group Chemical group 0.000 claims description 5
- 239000003086 colorant Substances 0.000 claims description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 150000001339 alkali metal compounds Chemical class 0.000 claims 2
- 230000000007 visual effect Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 148
- 230000000694 effects Effects 0.000 description 15
- 239000010408 film Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- -1 alkaline earth metal alkali metal compound Chemical class 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 150000000178 1,2,4-triazoles Chemical class 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FJDQFPXHSGXQBY-UHFFFAOYSA-L Cs2CO3 Substances [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 1
- KOPBYBDAPCDYFK-UHFFFAOYSA-N Cs2O Inorganic materials [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910000024 caesium carbonate Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- AKUNKIJLSDQFLS-UHFFFAOYSA-M dicesium;hydroxide Chemical compound [OH-].[Cs+].[Cs+] AKUNKIJLSDQFLS-UHFFFAOYSA-M 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/166—Electron transporting layers comprising a multilayered structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an organic light-emitting diode, an organic light-emitting display panel and a display device, wherein the organic light-emitting diode is composed of film layers which are sequentially stacked in a first direction, and the film layers are sequentially as follows: a first electrode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a second electrode layer, a light outcoupling layer, and the like; the electron transmission layer is at least one layer and is composed of at least two electron transmission structure modules with different refractive indexes, the electron transmission structure modules with different refractive indexes are sequentially arranged along the second direction, and the first direction and the second direction are perpendicular to each other. The electronic transmission layer is composed of electronic transmission structure modules with different refractive indexes and is sequentially arranged along the second direction, so that the light emitting property of the organic light emitting display device under a large visual angle can be improved, and the problem of color cast of the visual angle under the large visual angle is solved.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to an organic light emitting diode, an organic light emitting display panel, and a display device.
Background
An Organic Light Emitting Diode (OLED), which is a self-light emitting device, has a wide viewing angle, excellent contrast, rapid response, high luminance, excellent driving voltage characteristics, and color reproduction. A typical organic light emitting diode includes a first electrode layer 101, a Hole Transport Layer (HTL)102, an emission layer (EML)103, an Electron Transport Layer (ETL)104, and a second electrode layer 105, as shown in fig. 1. Which are stacked one on top of the other in a first direction on a substrate. The Hole Transport Layer (HTL)102, the light emitting layer (EML)103, and the Electron Transport Layer (ETL)104 are thin films made of organic compounds.
Commercial products are increasingly demanding in terms of pixel fineness and efficiency. In order to meet the requirement, a top-emitting mode is mostly adopted, and a microcavity effect exists due to the semitransparent second electrode layer and the emitting first electrode layer. The microcavity effect includes two interference modes of wide-angle interference and multi-beam interference. The microcavity effect has the functions of selecting, narrowing, enhancing and the like on a light source, and is often used for improving the chromaticity of a device, enhancing the emission intensity of a specific wavelength, changing the light emitting color of the device and the like, but the wide-angle interference affects the view angle characteristics of the device, namely, the light emitting peak shifts along with the shift of the view angle, so that the problems of brightness difference, chromaticity shift and the like are caused, and particularly, the microcavity effect has poor optical properties and serious chromatic aberration under a large view angle. As shown in fig. 2, total reflection of light from a medium into air is certainly generated at a large viewing angle, resulting in a sharp decrease in luminance and luminous efficiency at the large viewing angle. As shown in fig. 3, there is an optical path difference between rays 1 and 2 at an oblique viewing angle: Δ L ═ 2d/cos θ -2dtan θ sin θ ═ 2dcos θ. Phase growth conditions: λ is 2dcos θ/m, where m is a positive integer, and thus, the larger θ is, the smaller the phase length is, the blue shift occurs, resulting in a phenomenon of color shift in viewing angle. In the prior art, high light-emitting efficiency is obtained by adjusting the microcavity effect. Fig. 4 shows a schematic design of a commercial product, where a semi-transparent second electrode layer and a microcavity emitting the first electrode layer are adjusted, while a light outcoupling layer 106 is provided on the second electrode layer. However, this solution has a limited effect of suppressing the wide-angle interference phenomenon in the top-emitting OLED, and the viewing angle characteristics are not significantly improved.
Disclosure of Invention
The invention provides an organic light emitting diode, an organic light emitting display panel and a display device, which are used for solving the problems that a light output coupling layer is arranged on a second electrode layer in the prior art, the inhibition effect on the wide-angle interference phenomenon in a top-emitting OLED is limited, and the viewing angle characteristic is not obviously improved.
An embodiment of the present invention provides an organic light emitting diode, including: by each rete that piles up in proper order on the first direction constitute jointly, each rete is in proper order: a first electrode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a second electrode layer, a light outcoupling layer, and the like;
the electronic transmission layer is at least one layer and is composed of at least two electronic transmission structure modules with different refractive indexes, the electronic transmission structure modules with different refractive indexes are sequentially arranged along the second direction, and the first direction and the second direction are perpendicular to each other.
In some alternative embodiments, the material of the electron transport layer is an organic material such as an aromatic material.
In some alternative embodiments, at least one electron transport structure module comprises a dopant material, and the dopant material is one or more of a metal halide, a metal oxide, an organometallic, an alkali metal, an alkaline earth metal alkali metal compound, a rare earth metal compound.
In some alternative embodiments, the doped volume concentration of the doped metal halide, metal oxide, organometallic, alkali metal, alkaline earth metal alkali metal compound, rare earth metal compound, etc. in the electron transport structural module is no greater than 90%.
In some alternative embodiments, the maximum refractive index in the electron transport layer is less than 1.8.
In some optional embodiments, the thickness of the electron transport layer is 30 to 40 nm.
In some alternative embodiments, the electron transport layer is composed of two electron transport structure modules with different refractive indexes, and the two electron transport structure modules with different refractive indexes are arranged together, and are alternately arranged along the second direction.
In some optional embodiments, the electron transport layer is composed of electron transport structure modules with different refractive indexes, three electron transport structure modules are arranged, the electron transport structure modules are alternately arranged along the second direction, and the refractive index of the electron transport structure module arranged in the middle is larger than that of the electron transport structure modules arranged on two sides of the electron transport structure module.
In some optional embodiments, the electron transport layer includes a first electron transport layer and a second electron transport layer, and the first electron transport layer and the second electron transport layer are sequentially disposed along a first direction; the first electron transmission layer is composed of two electron transmission structure modules with different refractive indexes, the first electron transmission layer is provided with two electron transmission structure modules with different refractive indexes, and the two electron transmission structure modules are alternately arranged along the second direction.
In some optional embodiments, the first electron transport layer is disposed on a side of the second electron transport layer close to the first electrode, and a refractive index of the second electron transport layer is smaller than a refractive index of at least one electron transport structure module in the first electron transport layer.
In some optional embodiments, the first electron transport layer is disposed on a side of the second electron transport layer away from the first electrode, and a refractive index of the second electron transport layer is greater than a refractive index of each electron transport structure module in the first electron transport layer.
Correspondingly, the embodiment of the invention also provides an organic light-emitting display panel which comprises the organic light-emitting diode provided by the embodiment of the invention.
Correspondingly, the embodiment of the invention also provides a display device which comprises the organic light-emitting panel provided by the embodiment of the invention.
Compared with the prior art, the organic light-emitting diode, the organic light-emitting display panel and the display device provided by the invention at least realize the following beneficial effects:
the electron transport layer materials in the same pixel light emitting area are provided with electron transport structure modules with different refractive indexes, and the electron transport structure modules with different refractive indexes are sequentially arranged along the second direction. When light emitted by the light emitting layer passes through the electron transport layer with the smaller refractive index, the light is refracted at the interface, the vibration direction of the light is changed, and meanwhile, the phase of the light at the interface is also changed, so that the wide-angle interference in the microcavity effect is weakened or even eliminated. Therefore, the invention can effectively weaken the microcavity effect and improve the visual angle characteristic of the device.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a basic structure of an organic light emitting diode;
FIG. 2 is a schematic diagram of total reflection of light in a microcavity;
FIG. 3 is a schematic diagram of blue shift of light at large viewing angles in a microcavity;
FIG. 4 is a schematic diagram of a basic structure of an organic light emitting diode in the prior art;
FIG. 5 is a schematic structural diagram of a pixel of an OLED panel according to the present invention;
FIG. 6 is a first schematic view of an OLED structure according to the present invention;
FIG. 7 is a second schematic view of an OLED structure according to the present invention;
fig. 8 is a schematic structural diagram of a third organic light emitting diode provided by the present invention;
fig. 9 is a fourth schematic view of an organic light emitting diode structure provided by the present invention;
FIG. 10 is a schematic view of an organic light emitting display panel according to the present invention;
fig. 11 is a cross-sectional view of an organic light emitting display panel AA' according to the present invention;
fig. 12 is a display device provided by the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiments of the present invention will be described in further detail with reference to the drawings attached hereto.
The organic light emitting display panel provided by the embodiment of the present invention includes a plurality of pixel units arranged in an array, each of the pixel units includes sub-pixel units PX with different colors, as shown in fig. 5, each of the sub-pixels PX may include an organic light emitting diode 11, as shown in fig. 6, and each of the sub-pixel units is composed of film layers sequentially stacked in a first direction Y, and the film layers sequentially include: a first electrode layer (111), a hole injection layer (112), a hole transport layer (113), a light-emitting layer (114), an electron transport layer (115), an electron injection layer (116), a second electrode layer (117), a light outcoupling layer (118), and the like. Wherein the first electrode layer (111) and the second electrode layer (117) provide holes and electrons, respectively, the first electrode (111) comprises more than 2 functional layers, at least comprises a reflective film (not shown in the figure), mainly comprises silver, comprises a conductive transparent film, and mainly comprises ITO or IZO; the second electrode (117) may comprise a material selected from the group consisting of metals, metal oxides, and conductive polymers. Specifically, the electrode material includes carbon, cesium, potassium, lithium, calcium, sodium, magnesium, zirconium, indium, aluminum, silver, tantalum, vanadium, chromium, copper, zinc, iron, tungsten, molybdenum, nickel, gold, other metals, and alloys thereof; zinc oxide, indium oxide, tin oxide, Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and metal oxides similar thereto; and mixtures of oxides with metals, such as ZnO: Al and SnO2: Sb. In other words, the electrode can be formed as a metal electrode, or can be formed as a transparent electrode made of a transparent material (e.g., metal oxide), the second electrode has a transmittance of at least 30-50%, and the transmittance of the second electrode combined with the material of the light coupling layer (118) is greater than 65%. The hole injection layer (112) and the electron injection layer (116) are introduced to improve the device performance and improve the carrier injection capability; when a carrier is injected, the hole transport layer (113) and the electron transport layer (115) can realize the directional ordered controllable migration of the carrier under the action of an electric field; in the light emitting layer (114), the holes and electrons are recombined to generate excitons, and when the excitons are lowered from an excited state to a ground state, photons corresponding to energy difference are emitted, and according to the principle, visible light is generated, and according to different formulations, three colors of red, green and blue are generated. In the present invention, phosphorescent materials may be used as the red and green light emitting materials, fluorescent materials may be used as the blue light emitting materials, and specific examples of the light emitting layer materials may include 8-hydroxy-quinoline aluminum complex (Alq3), carbazole compounds, polystyrene based compounds, BAlq, 10-hydroxybenzoquinoline metal compounds, benzoxazole, benzothiazole and benzimidazole based compounds, poly (p-phenylene vinylene) (PPV) -based polymers, spiro compounds, polyfluorene, rubrene, and the like. However, the light emitting material is not particularly limited, and the specific arrangement needs to be determined according to the actual application environment of the organic light emitting display panel.
Wherein the electron transport layer (115) is composed of at least two electron transport structural modules with different refractive indexes: the electronic transmission structure module A and the electronic transmission structure module B are sequentially arranged along a second direction X, and the first direction Y and the second direction X are perpendicular to each other.
According to the organic light emitting diode provided by the invention, the electron transport layer materials in the same pixel light emitting region have the electron transport layer modules with different refractive indexes, and the electron transport layer modules with different refractive indexes are sequentially arranged along the second direction. When light emitted by the light emitting layer passes through the electron transport layer with the smaller refractive index, the light is refracted at the interface, the vibration direction of the light is changed, and meanwhile, the phase of the light at the interface is also changed, so that the wide-angle interference in the microcavity effect is weakened or even eliminated. Therefore, the invention can effectively weaken the microcavity effect and improve the visual angle characteristic of the device.
In some alternative embodiments, the material of the electron transport layer (115) is an organic material such as an aromatic material. The electron transport layer (115) is generally made of an aromatic compound having a large conjugated plane, such as 8-hydroxyquinoline aluminum (AlQ), 1,2,4-triazole derivatives (1,2,4-Triazoles, TAZ), PBD, Beq2, DPVBi, etc., and the selection of specific materials is determined according to the actual application environment of the organic light emitting display panel. The selection of the material of the electron transport layer properly improves the electron transport capacity and has film forming property and stability.
In some alternative embodiments, at least one electron transport layer module comprises a dopant material, and the dopant material is one or more of a metal halide, a metal oxide, an organometallic, an alkali metal, an alkaline earth metal alkali metal compound, a rare earth metal compound. For example, two electron transport modules with different refractive indexes, an electron transport layer module A and an electron transport layer module B, the electron transport layer module A is not dopedAnd the electron transport layer module B is doped with alkali metal. The electron transport layer module A can be doped with alkaline earth metal, and the electron transport layer module B can be doped with rare earth metal. The doped material can be NaF, CSF, MgF2、CaF2、MgO、CaO、BaO、SrO、Li2O、Na2O、K2O、Cs2O、Cs2CO3Mg, Ca, Li, Na, K, LiF, or KF. The doped material is mainly used for changing the refractive index of the electron transport structure module and improving the luminous efficiency, and the doping volume concentration of the metal halide, the metal oxide, the organic metal, the alkali metal, the alkaline earth metal alkali metal compound, the rare earth metal or the rare earth metal compound doped in the electron transport layer module is not more than 90%. The specific doping conditions depend on the requirements in the actual production.
In some alternative embodiments, the electron transport layer has a maximum doping with a refractive index of less than 1.8. Among the electron transport structure modules with different refractive indexes in the electron transport layer, the electron transport structure module with the largest refractive index has a refractive index of less than 1.8. The thickness of the electron transport layer is 30-40 nm, and when the thickness is in the above range, the increase of the driving voltage can be effectively prevented.
In some alternative embodiments, the electron transport layer is composed of two electron transport structure modules with different refractive indices, a total of two electron transport structure modules with different refractive indices, an electron transport structure module a and an electron transport structure module B, the electron transport structure modules a and the electron transport structure modules B being arranged alternately in the second direction X, as shown in fig. 6, according to the formula L × cos α ═ p × λ/2, it can be seen that the optical length L is reduced, the resonance wavelength λ is also reduced, the spectral peak position is blue-shifted, as the observed angle α is increased, the resonance wavelength λ is also reduced, as well as the spectral peak position is blue-shifted, therefore, the light emission characteristics of the microcavity effect at large viewing angles can be determined by the optical length L of the microcavity resonance and are related to the thickness and refractive index of each layer material, the thickness of the film has been adjusted to a nanoscale, the process requirements are higher for the film thickness, thus the light emission characteristics of the microcavity film can be improved by adjusting the refractive index of the microcavity film, the light emission characteristics can be reduced by adjusting the refractive index of the material of the electron transport layer, the electron transport structure modules a refractive index n is reduced, the effective refractive index of the light emitting layer n1., the light emitting layer is reduced by adjusting the effective refractive index of the microcavity light emitting layer.
In some alternative embodiments, as shown in fig. 7, the electron transport layer is composed of at least two electron transport structure modules with different refractive indexes, and three electron transport layer modules are arranged: an electron transport structure module A, an electron transport structure module B and an electron transport structure module C. The electronic transmission structure module B, the electronic transmission structure module A and the electronic transmission structure module C are sequentially arranged along the second direction, and the refractive index of the electronic transmission structure module A arranged in the middle is larger than the refractive indexes of the electronic transmission structure module B and the electronic transmission structure module C arranged on the two sides of the electronic transmission structure module A. Wherein the refractive indices of the electron transport structure module B and the electron transport structure module C may be the same. The arrangement of a plurality of electronic transmission structure modules with different refractive indexes can further effectively weaken the microcavity effect and improve the visual angle characteristic of the device.
In some alternative embodiments, as shown in fig. 8, the electron transport layer (115) includes a first electron transport layer (1151) and a second electron transport layer (1152), and the first electron transport layer (1151) and the second electron transport layer (1152) are sequentially disposed along a first direction; the first electron transport layer (1151) comprises two electron transport structural modules having different refractive indices. The first electron transport layer (1151) is provided with two electron transport structure modules with different refractive indexes, namely an electron transport structure module A and an electron transport structure module B, and the two electron transport layer modules are alternately arranged along the second direction X. A stacked structure of two electron transport layers is preferable, which can balance the injection and transport of electrons and can effectively block holes. In the conventional organic light emitting diode, since the amounts of electrons and holes vary with time, the number of excitons generated in the light emitting region gradually decreases after the start of driving. As a result, carrier balance may not be maintained, thereby reducing the life span of the organic light emitting diode. In the structure, the energy levels of the laminated structures of the two electron transmission layers are close, so that the carrier balance can be kept consistently, the service life of the organic light-emitting diode is prolonged, and the visual angle characteristic of the device can be improved.
In some optional embodiments, the first electron transport layer (1151) is disposed on a side of the second electron transport layer (1152) adjacent to the first electrode (111), and a refractive index of the second electron transport layer (1152) is less than a refractive index of at least one electron transport structure module in the first electron transport layer (1151), wherein the most preferred embodiment is that the refractive index of the second electron transport layer (1152) is less than the electron transport structure module a of the first display transport layer (1151) and greater than the electron transport layer module B of the first display transport layer (1151). This improves the viewing angle characteristics of the device while improving the lifetime of the organic light emitting diode.
In some alternative embodiments, the first electron transport layer (1151) is disposed on a side of the second electron transport layer (1152) away from the first electrode (111), as shown in fig. 9, and the refractive index of the second electron transport layer (1152) is greater than the refractive indices of the two electron transport structural modules in the first electron transport layer (1151). At this time, it may be preferable that the first electron transport layer (1151) is doped with an n-type dopant. The first electron transport layer (1151) functions to make the charge generation layer (117) effectively satisfy the Fermi level (Fermi level) by doping with an n-type dopant. Therefore, the first electron transport layer (1151) may improve electron injection properties by reducing an energy barrier for electron injection of the charge generation layer (117). The LUMO level of the n-type doped first electron transport layer (1151) has a characteristic of being closer to the fermi level (Ef) than the LUMO level of the second electron transport layer (1152). Accordingly, an energy barrier between two layers is reduced, and thus, electron injection properties can be improved, and at the same time, viewing angle characteristics of the device are improved.
The electron transport layer may be formed by an evaporation process, but is not limited thereto, and may be formed by other processes such as chemical vapor deposition.
The organic light emitting diode of the embodiment described in the present invention may be formed of a top emission type, a bottom emission type, or a dual emission type. In this case, a transparent electrode for passing light can be formed depending on the direction of light emission. The transparency is not limited to the light transmittance as long as light can pass through, and for example, may be 70% or more. The transparent electrode may be prepared using a transparent material, or may be formed of a non-transparent material that is so thin as to be transparent.
The invention also provides an organic light emitting display panel comprising any one of the organic light emitting diodes mentioned in the above embodiments. Specifically, referring to fig. 10 and fig. 11, fig. 10 is a schematic diagram of an organic light emitting display panel according to an embodiment of the present invention, where the organic light emitting display panel includes a plurality of pixel units arranged in an array, each of the pixel units includes sub-pixel units with different colors, the number and the color of the sub-pixel units may be determined according to actual situations, and the color of the sub-pixel is illustrated as R, G, B. The organic light emitting display panel of fig. 11 includes a substrate 10, which may be a glass substrate, a flexible substrate, a silicon substrate, etc., but is not limited thereto. The organic light emitting display panel includes a plurality of pixels PX arranged in an array, and each pixel PX may include an organic light emitting diode 11, and a pixel driving circuit electrically connected to each organic light emitting diode 11. A typical pixel driving circuit includes a plurality of transistors 700 and a storage capacitor, and the transistors 700 may include: the semiconductor device includes a gate electrode 710, an active layer 720 insulated from the gate electrode 710, and a source electrode 731 and a drain electrode 732 insulated from the gate electrode 710 and electrically connected to the active layer 720. As shown in fig. 5, a capacitance metal layer 800 insulated from both the source 731 and the drain 732 is further disposed between the layer of the source 731 and the drain 732 of the transistor 700 and the layer of the gate 710, and in general, in practical applications, it is required that an orthogonal projection of the capacitance metal layer 800 on the substrate 10 and an orthogonal projection of the gate on the substrate have at least a partial overlapping region, and an interlayer dielectric layer is further disposed between the capacitance metal layer 800 and the gate so that the overlapping region forms a storage capacitor. By connecting these transistors and the storage capacitors to each other, the data voltage signal and the high level signal PVDD are applied, and the organic light emitting diode can be driven to emit light, thereby realizing a display function.
Fig. 12 provides a display device 1000 including the organic light emitting display panel 100A according to any of the above embodiments of the present invention. The embodiment of fig. 12 is only an example of a mobile phone, and the display device 1000 is described, it is to be understood that the display device provided in the embodiment of the present invention may be other display devices having a display function, such as a computer, a television, and a vehicle-mounted display device, and the present invention is not limited thereto. The display device provided in the embodiment of the present invention has the beneficial effects of the organic light emitting display panel provided in the embodiment of the present invention, and specific descriptions on the organic light emitting display panel in the above embodiments may be specifically referred to, and this embodiment is not described herein again.
An embodiment of the present invention provides an organic light emitting diode, including: by each rete that piles up in proper order on the first direction constitute jointly, each rete is in proper order: a first electrode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a second electrode layer, a light outcoupling layer, and the like; the electronic transmission layer is at least one layer and is composed of at least two electronic transmission structure modules with different refractive indexes, the electronic transmission structure modules with different refractive indexes are sequentially arranged along the second direction, and the first direction and the second direction are perpendicular to each other. The electron transport layer materials in the same pixel light emitting area are provided with electron transport structure modules with different refractive indexes, and the electron transport structure modules with different refractive indexes are sequentially arranged along the second direction. When light emitted by the light emitting layer passes through the electron transport layer with the smaller refractive index, the light is refracted at the interface, the vibration direction of the light is changed, and meanwhile, the phase of the light at the interface is also changed, so that the wide-angle interference in the microcavity effect is weakened or even eliminated. Therefore, the invention can effectively weaken the microcavity effect and improve the visual angle characteristic of the device.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (13)
1. An organic light emitting diode, the organic light emitting diode is composed of all film layers which are stacked in sequence in a first direction, and all the film layers are sequentially: the light emitting diode comprises a first electrode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a second electrode layer and a light output coupling layer;
each pixel unit comprises sub-pixel units with different colors, and each sub-pixel unit comprises the organic light emitting diode; the electron transmission layer is at least one layer and is composed of at least two electron transmission structure modules with different refractive indexes, the electron transmission structure modules with different refractive indexes are sequentially arranged along the second direction, and the first direction and the second direction are perpendicular to each other.
2. The organic light emitting diode of claim 1, wherein the material of the electron transport layer is an aromatic organic material.
3. The organic light emitting diode of claim 1, wherein at least one of the electron transport structural modules comprises a dopant material, and the dopant material is one or more of a metal halide, a metal oxide, an organometallic, an alkali metal, an alkaline earth metal, an alkali metal compound, a rare earth metal compound.
4. The organic light-emitting diode of claim 3, wherein the doping volume concentration of the metal halide, metal oxide, organometallic, alkali metal, alkaline earth metal, alkali metal compound, rare earth metal compound doped in the electron transport structural module is not greater than 90%.
5. The organic light-emitting diode of claim 1, wherein the electron transport layer has a maximum refractive index of less than 1.8@400 nm to 700 nm.
6. The organic light emitting diode according to claim 1, wherein the electron transport layer has a thickness of 30 to 40 nm.
7. The organic light emitting diode of claim 1, wherein the electron transport layer is composed of two electron transport structure modules having different refractive indexes, and the two electron transport structure modules having different refractive indexes are disposed in total, and are alternately disposed along the second direction.
8. The oled according to claim 1, wherein the electron transport layer is composed of electron transport layer modules having different refractive indexes, a total of three electron transport structure modules are disposed, the electron transport structure modules are alternately disposed along the second direction, and the refractive index of the electron transport structure module disposed in the middle is greater than the refractive index of the electron transport structure modules disposed at both sides thereof.
9. The organic light emitting diode of claim 1, wherein the electron transport layer comprises a first electron transport layer and a second electron transport layer, the first electron transport layer and the second electron transport layer being sequentially disposed along a first direction;
the first electron transmission layer is composed of two electron transmission layer modules with different refractive indexes, the first electron transmission layer is provided with the two electron transmission structure modules with different refractive indexes, and the two electron transmission structure modules are alternately arranged along the second direction.
10. The oled of claim 9, wherein the first electron transport layer is disposed on a side of the second electron transport layer adjacent to the first electrode, and a refractive index of the second electron transport layer is smaller than a refractive index of at least one of the electron transport structure modules in the first electron transport layer.
11. The organic light-emitting diode of claim 1, wherein the electron transport layer comprises a first electron transport layer and a second electron transport layer;
the first electron transport layer is composed of two electron transport layer modules with different refractive indexes, the first electron transport layer is provided with two electron transport structure modules with different refractive indexes, and the two electron transport structure modules are alternately arranged along the second direction;
the first electron transport layer is arranged on one side, far away from the first electrode, of the second electron transport layer, and the refractive index of the second electron transport layer is larger than that of each electron transport structure module in the first electron transport layer.
12. An organic light emitting display panel comprising the organic light emitting diode according to any one of claims 1 to 11.
13. An organic light emitting display device comprising the organic light emitting display panel according to claim 12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810003937.2A CN108134012B (en) | 2018-01-03 | 2018-01-03 | Organic light emitting diode, organic light emitting display panel and display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810003937.2A CN108134012B (en) | 2018-01-03 | 2018-01-03 | Organic light emitting diode, organic light emitting display panel and display device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108134012A CN108134012A (en) | 2018-06-08 |
CN108134012B true CN108134012B (en) | 2020-05-22 |
Family
ID=62400328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810003937.2A Active CN108134012B (en) | 2018-01-03 | 2018-01-03 | Organic light emitting diode, organic light emitting display panel and display device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108134012B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110444679B (en) * | 2019-06-27 | 2021-12-07 | 昆山国显光电有限公司 | Display panel and display device |
CN110311048B (en) * | 2019-06-29 | 2022-03-22 | 昆山国显光电有限公司 | Light-emitting device and display panel |
CN110323264B (en) * | 2019-07-17 | 2021-08-27 | 昆山国显光电有限公司 | Display panel and display device |
WO2022252124A1 (en) * | 2021-06-01 | 2022-12-08 | 京东方科技集团股份有限公司 | Electron transport layer material and manufacturing method therefor, electroluminescent device and manufacturing method therefor, and display apparatus |
WO2024087228A1 (en) * | 2022-10-28 | 2024-05-02 | 京东方科技集团股份有限公司 | Light-emitting device, manufacturing method therefor, and display substrate |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103579520B (en) * | 2012-07-30 | 2016-09-07 | 昆山维信诺显示技术有限公司 | Organic light emitting diodde desplay device |
CN103762318B (en) * | 2013-12-31 | 2017-01-18 | 昆山工研院新型平板显示技术中心有限公司 | Top emission OLED device |
CN103779501B (en) * | 2013-12-31 | 2018-05-15 | 昆山工研院新型平板显示技术中心有限公司 | A kind of top emission OLED device for improving viewing angle characteristic |
-
2018
- 2018-01-03 CN CN201810003937.2A patent/CN108134012B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN108134012A (en) | 2018-06-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN112071996B (en) | Organic light emitting device and organic light emitting display device using the same | |
CN108134012B (en) | Organic light emitting diode, organic light emitting display panel and display device | |
CN110544749B (en) | Display device | |
US9831291B2 (en) | Organic light emitting display device and method of manufacturing the same | |
JP4654207B2 (en) | Display device | |
JP5783780B2 (en) | Display device | |
US8735873B2 (en) | Organic light emitting diode | |
KR101634814B1 (en) | Organic light emitting device, display unit including the same, and illuminating device including the same | |
CN102097456B (en) | Organic light emitting diode device | |
US9343510B2 (en) | Organic light emitting display device | |
CN108417729B (en) | White organic light emitting device | |
KR101365671B1 (en) | Organic electroluminescence device | |
KR20230015519A (en) | Light-emitting panel, display device, and method for manufacturing light-emitting panel | |
US20130193419A1 (en) | Organic electroluminescent element and display apparatus including the same | |
WO2017043242A1 (en) | Organic electroluminescence device, lighting device and display device | |
US9949336B2 (en) | Organic light emitting diode device having electrode with Ag—Mg alloy | |
US8536782B2 (en) | Blue light-emitting device and organic light emitting display including the same | |
TW201318240A (en) | Light emitting device, display device, and illumination device | |
CN106374049B (en) | Organic light emitting diode display | |
KR20220018535A (en) | Organic light emitting display device | |
US20070285001A1 (en) | System for displaying images | |
KR20130046640A (en) | Organic electroluminescent diode and method of fabricating the same | |
KR100683670B1 (en) | Organic electro-luminescent display device comprising optical micro-cavity | |
CN115000319B (en) | Display panel, manufacturing method thereof and light-emitting device | |
KR101849583B1 (en) | White organic light emitting display device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211018 Address after: No.8, liufangyuanheng Road, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430074 Patentee after: WUHAN TIANMA MICROELECTRONICS Co.,Ltd. Patentee after: Wuhan Tianma Microelectronics Co.,Ltd. Shanghai Branch Address before: Room 509, building 1, No. 6111, Longdong Avenue, Pudong New Area, Shanghai, 201201 Patentee before: SHANGHAI TIANMA AM-OLED Co.,Ltd. |