KR20130046640A - Organic electroluminescent diode and method of fabricating the same - Google Patents

Abstract

PURPOSE: An organic electroluminescent diode and a method for fabricating the same are provided to simplify manufacturing processes by forming a light emitting material layer and a sub hole transport layer in a chamber. CONSTITUTION: An anode is formed in red, green, and blue pixel regions. A first organic layer(220) includes a second hole transport layer and a first electron transport layer. A second organic layer(230) includes a third hole transport layer and a second electron transport layer. A third electron transport layer is located on a green lighting material pattern. A cathode(260) is positioned in the upper part of the first to third electron transport layers.

Description

Organic electroluminescent diode and method of manufacturing the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode, and more particularly, to a method of manufacturing an organic light emitting diode having improved efficiency and a method of manufacturing an organic light emitting diode having a simple manufacturing process and a reduced manufacturing cost.

Until recently, cathode ray tubes (CRTs) have been mainly used as display equipment. Recently, however, flat panel displays such as plasma display panels (PDPs), liquid crystal display devices (LCDs), and organic electroluminescent devices (OELDs), which can replace CRTs, Is a widely studied and used trend.

Among the flat panel display devices as described above, the organic light emitting device is a self-light emitting device, and since the backlight used in the liquid crystal display device which is a non-light emitting device is not necessary, a light weight and a thin film are possible.

In addition, it is advantageous in terms of power consumption compared to the liquid crystal display equipment, it is possible to drive the DC low voltage, fast response speed, and because the internal components are solid, it is strong against external shock, and has a wide range of use temperature range.

In particular, since the manufacturing process is simple, there is an advantage that can reduce the production cost more than the existing liquid crystal display equipment.

1 is a diagram illustrating a basic pixel structure of a general active matrix organic light emitting display device.

As illustrated, one pixel of the active matrix organic light emitting diode is a switching thin film transistor STr, a driving thin film transistor DTr, a storage capacitor StgC, and an organic light emitting diode E. Is made of.

That is, the gate line GL is formed in the first direction, the data line DL is formed in the second direction crossing the first direction, and the voltage is spaced apart from the data line DL. The power supply wiring PL is formed.

A switching thin film transistor STr is formed at the intersection of the data line DL and the gate line GL and a driving thin film transistor DTr electrically connected to the switching thin film transistor STr is formed have.

At this time, the driving thin film transistor DTr is electrically connected to the organic light emitting diode E. That is, the first electrode, which is one terminal of the organic electroluminescent diode E, is connected to the drain electrode of the driving thin film transistor DTr, and the second electrode, which is the other terminal, is connected to the power supply line PL. In this case, the power line PL transfers a power supply voltage to the organic light emitting diode E. A storage capacitor StgC is formed between the gate electrode and the source electrode of the driving thin film transistor DTr.

Therefore, when a signal is applied through the gate line GL, the switching thin film transistor STr is turned on and the signal of the data line DL is transmitted to the gate electrode of the driving thin film transistor DTr, The thin film transistor DTr is turned on so that light is output through the organic light emitting diode E. At this time, when the driving thin film transistor DTr is turned on, a level of a current flowing from the power supply line PL to the organic light emitting diode E is determined. Accordingly, the organic light emitting diode E The storage capacitor StgC is capable of maintaining a constant gate voltage of the driving thin film transistor DTr when the switching thin film transistor STr is turned off The level of the current flowing through the organic light emitting diode E can be kept constant until the next frame even if the switching thin film transistor STr is turned off.

As shown in FIG. 2, the organic light emitting diode E may include an anode 10 formed in each of the red, green, and blue pixel regions Rp, Gp, and Bp, and a hole transport layer 12; a hole transporting layer, an emitting material layer including a red organic light emitting pattern 14, a green organic light emitting pattern 16, and a blue organic light emitting pattern 18, and an electron transporting layer 20. ) And a cathode. Although not shown, a hole injection layer may be positioned between the anode 10 and the hole transport layer 12, and an electron injection layer may be located between the cathode 22 and the electron transport layer 20.

In the organic light emitting diode (E) having such a configuration, when voltage is applied to the anode 10 and the cathode 22, holes and electrons pass through the hole transport layer 12 and the electron transport layer 20, respectively. Move to the light emitting material layer in combination with each other. However, conventional organic light emitting diodes have a limit in light output efficiency.

In the present invention, to overcome the limitation of the light output of the organic light emitting diode.

In order to solve the above problems, the present invention includes an anode formed in each of the red, green and blue pixel areas; A first hole transport layer formed on each of the red, green, and blue pixel regions and positioned on the anode; A second hole transport layer on the first hole transport layer, the second hole transport layer comprising a first host of a hole transport type, a second host of the first host and an electron transport type, and a first dopant in the red pixel region; A first organic material layer comprising a light emitting material pattern and a first electron transport layer formed of the second host; A second organic material layer on the first hole transport layer in the green pixel area, the second organic material layer including a third hole transport layer, a green light emitting material pattern, and a second electron transport layer; A green light emitting material pattern positioned on the first hole transport layer in the blue pixel area; A third electron transport layer on the green light emitting material pattern; It provides an organic light emitting diode comprising a cathode located on the first to third electron transport layer.

The green light emitting material pattern includes a third host of a hole transporting type, a fourth host and a second dopant of an electron transporting type, the third hole transporting layer of the third host, and the second electron transporting layer of the And a fourth host.

The HOMO value of the third host is 5.2 to 5.6 eV, the LUMO value is 2.2 to 2.6 eV, the HOMO value of the fourth host is 5.7 to 6.1 eV and the LUMO value is 2.6 to 3.0 eV.

The HOMO value of the first host is 5.2 ~ 5.6 eV, the LUMO value is 2.2 ~ 2.6 eV, the HOMO value of the second host is characterized in that the 5.7 ~ 6.1 eV and the LUMO value is 2.6 ~ 3.0 eV.

The first host is selected from carbazole derivatives or triphenylamine derivatives.

The second host is selected from an oxadiazole derivative, a 1,2,4-triazole derivative or a 1,3,5-triazine derivative.

A first distance in the red pixel region, a second distance smaller than the first distance in the blue pixel region, and a second distance smaller than the first distance and larger than the second distance in the green pixel region. It is characterized by three distances.

The thickness of the second hole transport layer is greater than the thickness of the third hole transport layer.

The negative electrode is made of an alloy of magnesium and silver, characterized in that having a transflective property.

In another aspect, the present invention includes forming an anode covering red, green and blue pixel areas on a substrate on which red, green and blue pixel areas are defined; Forming a first hole transport layer on the anode; The substrate on which the first hole transporting layer is formed is formed in a chamber in which a first source containing a first hole transporting type host, a second source containing an electron transporting second host, and a third source containing a dopant are located. Position and seal the second and third sources with a shutter and heat-deposit to deposit the first host to form a second hole transport layer on the first hole transport layer in the red pixel region, and then remove the shutter. Thermally depositing the first host, the second host, and the dopant to form a red light emitting material pattern on the second hole transport layer, sealing the first and third sources with a shutter, and thermally depositing the first and third sources. Forming a first electron transport layer on the red light emitting material pattern by depositing a second host; Continuously depositing a third hole transport layer, a green light emitting material pattern, and a second transfer transport layer on the first hole transport layer in the green pixel region; Forming a blue light emitting material pattern on the first hole transport layer in the blue pixel region; Forming a third electron transporting layer on the blue light emitting material pattern; It provides a method of manufacturing an organic light emitting diode comprising the step of forming a cathode on the first to third electron transport layer.

The HOMO value of the first host is 5.2 ~ 5.6 eV, the LUMO value is 2.2 ~ 2.6 eV, the HOMO value of the second host is characterized in that the 5.7 ~ 6.1 eV and the LUMO value is 2.6 ~ 3.0 eV.

The first host is selected from carbazole derivatives or triphenylamine derivatives.

The second host is selected from an oxadiazole derivative, a 1,2,4-triazole derivative or a 1,3,5-triazine derivative.

The organic light emitting diode according to the present invention improves light output efficiency by using a microcavity effect.

In addition, by forming the light emitting material layer and the auxiliary hole transport layer in one chamber, it is possible to simplify the manufacturing process and reduce the manufacturing cost.

1 is a diagram illustrating a basic pixel structure of a general active matrix organic light emitting display device.
2 is a schematic cross-sectional view of a general organic light emitting diode.
3 is a schematic cross-sectional view of an organic light emitting diode according to a first embodiment of the present invention.
4 is a schematic cross-sectional view of an organic light emitting diode according to a second embodiment of the present invention.
5A to 5C are cross-sectional views illustrating a part of a manufacturing process of an organic light emitting diode according to a second embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the drawings.

3 is a schematic cross-sectional view of an organic light emitting diode according to a first embodiment of the present invention.

The organic light emitting diode includes an anode 110, a hole injection layer 111, a first hole transport layer 112, and the red pixel region formed in each of the red, green, and blue pixel regions Rp, Gp, and Bp. A second hole transport layer 114 formed at (Rp), a third hole transport layer 116 formed at the green pixel region Gp, a red organic light emitting pattern 122, a green organic light emitting pattern 124, and A light emitting material layer including a blue organic light emitting pattern 126, an electron transport layer 130, a cathode 140, and a capping layer 150 are formed. Although not shown, an electron injection layer may be positioned between the cathode 140 and the electron transport layer 130.

Although not shown, in the organic light emitting display device, a gate wiring and a data wiring defining each pixel region Rp, Gp, and Bp crossing each other on a substrate and a power wiring extending in parallel with any one of them are located. Each pixel region Rp, Gp, and Bp includes a switching thin film transistor connected to a gate line and a data line and a driving thin film transistor connected to the switching thin film transistor. The driving thin film transistor is connected to the anode 110.

The anode 110 is a reflective electrode, and includes, for example, a transparent conductive material layer having a high work function such as indium-tin-oxide (ITO) and a reflective material layer such as silver or silver alloy. can do.

The first hole transport layer 112 is formed in the entire red, green, and blue pixel regions Rp, Gp, and Bp, and each of the second and third hole transport layers 114 and 116 is formed in the red and green pixel regions. It is formed at (Rp, Gp).

In addition, the cathode 140 is made of an alloy of magnesium and silver (Mg: Ag) has a transflective property. That is, the light emitted from the light emitting material layer is displayed to the outside through the cathode 140. Since the cathode 140 has a transflective property, some of the light is directed toward the anode 110 again.

As such, repetitive reflection occurs between the anode 110 and the cathode 140 serving as a reflective layer, which is called a microcavity effect. That is, light is repeatedly reflected in the cavity between the anode 110 and the cathode 140 to increase the light efficiency.

In this case, since the wavelengths of the light emitted from the red, green, and blue organic light emitting patterns 122, 124, and 126 are different, the thickness of the cavity defined as the distance between the anode 110 and the cathode 140 is determined. Will be different. That is, in the red pixel region Rp where the red light having the longest wavelength is emitted, the anode 110 and the cathode 140 are spaced apart by the first distance d1 and the blue light having the shortest wavelength is emitted. In the pixel area Bp, the anode 110 and the cathode 140 are spaced apart by a third distance d3, and the anode 110 and the cathode 140 are disposed in the green pixel area Gp where green light is emitted. The second distance d2 between) is smaller than the first distance d1 and larger than the third distance d3. (d1> d2> d3)

Accordingly, the first hole transport layer 112 is formed over the red, green, and blue pixel regions Rp, Gp, and Bp based on the wavelength of the green light, and the second hole is formed in the red pixel region Rp. A hole transport layer 114 is further formed, and a third hole transport layer 116 having a thickness smaller than that of the second hole transport layer 114 is formed in the green pixel region Gp.

On the other hand, the capping layer 150 is to increase the light extraction effect, the hole transport layer 112, 114, 116 and the host material of the electron transport layer 130 and the organic light emitting pattern (122, 124, 126) It is made of either.

The organic light emitting diode having the above-described configuration has an effect of increasing light output efficiency and obtaining vivid color characteristics by using the microcavity effect.

However, in the organic light emitting diode of the first embodiment described above, the second and third hole transport layers 112 and 114 must be formed in each of the red pixel area Rp and the green pixel area Gp for the microcavity effect. This complicates the manufacturing process.

That is, referring to FIG. 3, the first chamber for forming the first hole transport layer 112, the second chamber for forming the third hole transport layer 116, and the second chamber for forming the second hole transport layer 114. A third chamber, a fourth chamber for forming the blue organic light emitting pattern 126, a fifth chamber for forming the green organic light emitting pattern 124, a sixth chamber for forming the red organic light emitting pattern 122, and an electron transport layer A seventh chamber for forming 130, an eighth chamber for forming cathode 140, and a ninth chamber for forming capping layer 150 are required. Considering the process chambers of the anode 110 and the hole injection layer 112, 11 chambers are required, and if the hole injection layer 112 is formed in one chamber with the first hole transport layer 114, 10 chambers are required. do.

This increase in the number of chambers has the problem of complicating the process and increasing the manufacturing cost.

An organic light emitting diode according to a second embodiment for solving the above problem will be described.

4 is a schematic cross-sectional view of an organic light emitting diode according to a second embodiment of the present invention.

Referring to FIG. 4, the organic light emitting diode according to the second embodiment of the present invention includes an anode 210 and a hole injection layer 211 formed in each of the red, green, and blue pixel regions Rp, Gp, and Bp. And a first organic material formed on the first hole transport layer 212 and the red pixel region Rp and including a second hole transport layer 222, a red light emitting material pattern 224, and a first electron transport layer 226. The second organic material layer 230 formed in the layer 220 and the green pixel region Gp and including a third hole transport layer 232, a green light emitting material pattern 234, and a second electron transport layer 236. And a blue light emitting material pattern 240 and a third electron transport layer 242, an electron injection layer 250, a cathode 260, and a capping layer 270 formed in the blue pixel region Bp. It is configured to include.

The electron injection layer may be omitted to facilitate injection of electrons.

The anode 210 is a reflective electrode, for example, a transparent conductive material layer having a high work function such as indium-tin-oxide (ITO) and a reflective material such as silver (Ag) or a silver alloy It may comprise a layer.

The first hole transport layer 212 may be formed in the entire red, green, and blue pixel regions Rp, Gp, and Bp, and may be formed in the same chamber as the hole injection layer 211 or in a separate chamber. have.

The first organic material layer 220 positioned in the red pixel region Rp includes a second hole transport layer 222, a red light emitting material pattern 224, and a first electron transporting layer 226. Pattern 224 consists of first and second hosts and a first dopant. The first host is of a hole transport type, and the second host is of an electron transport type. That is, the red light emitting material pattern 224 may be formed of a first host of a hole mobility type having a hole mobility greater than an electron mobility, and of an electron mobility type having an electron mobility greater than a hole mobility. By using both hosts, the hole-electron balance is improved.

Specifically, the first host has a highest occupied molecular orbital (HOMO) value of 5.2 to 5.6 eV, a lower occupied molecular orbital (LUMO) value of 2.2 to 2.6 eV, and the second host has a HOMO value of 5.7 to 6.1 eV, LUMO value is characterized in that 2.6 ~ 3.0 eV.

For example, the first host is selected from a carbazole derivative or a triphenylamine derivative, and the carbazole derivative is 4,4′-bis (9-carbazolyl) biphenyl represented by Formula 1-1 below. (CBP), and the triphenylamine derivative may be fluorene / triarylamine hybrid, tris [4- (9-phenylfluoren-9-yl) phenyl] amine (TFTPA) represented by the following Chemical Formula 1-2.

Formula 1 -One

Formula 1 -2

For example, the second host is selected from an oxadiazole derivative, a 1,2,4-triazole derivative, or a 1,3,5-triazine derivative, and the oxadiazole derivative is represented by Formula 2-1. 2,2'-bis (1,3,4-oxadiazol-2-yl) biphenyls (BOBPs).

In addition, the 1,2,4-triazole derivative may be 3-phenyl-4- (1'-naphthyl) -5-phenyl-1,2,4-triazole (NTAZ) represented by the following Chemical Formula 2-2, 1 The, 3,5-triazine derivative may be 2,4,6-tris (biphenyl-3-yl) -1,3,5-triazine (T2T) represented by the following Chemical Formula 2-3.

(2) -One

(2) -2

(2) -3

In addition, the second hole transport layer 222 is formed of the first host of the hole transport type, and the first electron transport layer 226 is formed of the second host of the electron transport type. Accordingly, the second hole transport layer 222, the red light emitting material pattern 224, and the first electron transport layer 226 may be formed in one chamber.

In addition, the second organic material layer 230 positioned in the green pixel region Gp includes a third hole transport layer 232, a green light emitting material pattern 234, and a second electron transport layer 236. The light emitting material pattern 234 includes third and fourth hosts and a second dopant. The third host is of a hole transport type, and the fourth host is of an electron transport type. That is, the green light emitting material pattern 234 is formed of a third host of a hole mobility type having a hole mobility greater than an electron mobility, and a third type of electron mobility type having an electron mobility greater than a hole mobility. By using all four hosts, the hole-electron balance is improved.

In detail, the third host has a HOMO value of 5.2 to 5.6 eV, a LUMO value of 2.2 to 2.6 eV, and the fourth host is similar to the first host of the red light emitting material pattern 224. Similar to the second host of 224, the HOMO value is 5.7 to 6.1 eV, and the LUMO value is 2.6 to 3.0 eV.

For example, the third host is selected from a carbazole derivative or a triphenylamine derivative, and the carbazole derivative is 4,4′-bis (9-carbazolyl) biphenyl represented by Chemical Formula 1-1. (CBP), and the triphenylamine derivative may be fluorene / triarylamine hybrid, tris [4- (9-phenylfluoren-9-yl) phenyl] amine (TFTPA) represented by Chemical Formula 1-2.

For example, the fourth host is selected from an oxadiazole derivative, a 1,2,4-triazole derivative, or a 1,3,5-triazine derivative, and the oxadiazole derivative is represented by Formula 2-1. 2,2'-bis (1,3,4-oxadiazol-2-yl) biphenyls (BOBPs). In addition, the 1,2,4-triazole derivative may be 3-phenyl-4- (1'-naphthyl) -5-phenyl-1,2,4-triazole (NTAZ) represented by Chemical Formula 2-2, 1 The, 3,5-triazine derivative may be 2,4,6-tris (biphenyl-3-yl) -1,3,5-triazine (T2T) represented by Chemical Formula 2-3.

Meanwhile, the blue light emitting material pattern 240 formed in the blue pixel area Bp is formed in contact with the first hole transport layer 212, and the third electron transport layer 242 is formed on the blue light emitting pattern 240. Is formed. When the blue light emission pattern 240 includes an electron transport type host, the blue light emission pattern 240 and the third electron transport layer 242 may be formed in one chamber. However, unlike the red and green pixel areas Rp and Gp, the blue pixel area Bp does not require an additional hole transport layer other than the first hole transport layer 212 for the microcavity effect. The light emitting material pattern 240 need not be formed of two hosts.

The electron injection layer 250 and the cathode 260 are formed on the first organic material layer 220, the second organic material layer 230, and the third electron transport layer 242. The electron injection layer 250 may be omitted to improve electron injection characteristics. The electron injection layer 250 may be made of Mg, LiF, or Mg: LiF, and may be formed in one chamber with a cathode 260 made of an alloy of magnesium and silver (Mg: Ag).

On the other hand, the cathode 260 is made of an alloy of magnesium and silver (Mg: Ag) has a transflective property. That is, the light emitted from the light emitting material layer is displayed to the outside through the cathode 260. Since the cathode 260 has a transflective property, some of the light is directed toward the anode 210 again.

As described above, repetitive reflection occurs between the anode 210 and the cathode 260 serving as a reflective layer, which is called a microcavity effect. That is, light is repeatedly reflected in the cavity between the anode 210 and the cathode 260 to increase the light efficiency.

In this case, since the wavelengths of the light emitted from the red, green, and blue organic light emitting patterns 224, 234, and 240 are different, the thickness of the cavity defined as the distance between the anode 210 and the cathode 240 is determined. Will be different. That is, the anode 210 and the cathode 260 are spaced apart by a first distance (d1 in FIG. 3) in the red pixel area Rp where the red light having the longest wavelength is emitted. In the emitted blue pixel region Bp, the anode 210 and the cathode 260 are spaced apart by a third distance (d3 in FIG. 3), and the anode 210 in the green pixel region Gp where green light is emitted. ) And the second distance d2 between the cathode 260 is smaller than the first distance d1 and larger than the third distance d3 of FIG. 3.

Accordingly, the first hole transport layer 212 is formed over the red, green, and blue pixel areas Rp, Gp, and Bp based on the wavelength of the green light, and the second hole is formed in the red pixel area Rp. A hole transport layer 222 is further formed, and a third hole transport layer 232 having a thickness smaller than that of the second hole transport layer 222 is formed in the green pixel region Gp.

The capping layer 270 is to increase the light extraction effect, is located on the cathode 260, it can be omitted.

The organic light emitting diode described above reduces the number of process chambers while utilizing the microcavity effect by varying the distance between the anode 210 and the cathode 260 in the red, green, and blue pixel regions Rp, Gp, and Bp. Can be.

That is, the organic light emitting device needs a hole transport layer and an electron transport layer for the movement of holes and electrons, and the second hole for increasing the distance between the anode 210 and the cathode 260 in the red pixel region Rp. The transport layer 222 is formed using a first host, which is a hole transport type of the red light emitting material pattern 224. In addition, the first electron transport layer 226 is formed using a second host which is an electron transport type of the red light emitting material pattern 224. In other words, the red light emitting material pattern 224 is formed of the first host of the hole transporting type, the second host of the electron transporting type, and the first dopant, and the second hole transporting layer 222 and the second hole transporting layer comprising only the first host. The first electron transport layer 226 consisting of only the host is formed in one chamber.

In addition, the third hole transport layer 232 for increasing the distance between the anode 210 and the cathode 260 in the green pixel region Gp uses a third host that is a hole transport type of the green light emitting material pattern 234. The second electron transport layer 236 is formed using a fourth host, which is an electron transport type of the green light emitting material pattern 234. In other words, the green light emitting material pattern 234 is formed of a third host of a hole transporting type, a fourth host of an electron transporting type, and a second dopant, and includes a third hole transporting layer 232 and a fourth layer consisting of only the third host. A second electron transport layer 236 consisting of only a host is formed in one chamber.

As a result, the number of chambers increased to achieve the microcavity effect can simplify the manufacturing process and reduce the manufacturing cost.

A manufacturing process of the first organic material layer 220 of the red pixel region Rp will be further described with reference to FIGS. 5A through 5C, which illustrate a part of the manufacturing process of the organic light emitting diode according to the second embodiment of the present invention. .

First, an anode (210 of FIG. 4), a hole injection layer (211 of FIG. 4), and a first hole transport layer (212 of FIG. 4) are formed on the substrate 300.

Next, as illustrated in FIG. 5A, the substrate 300 on which the anode (210 in FIG. 4), the hole injection layer (211 in FIG. 4) and the first hole transport layer (212 in FIG. 4) is formed may be formed of a first host H1. Chamber (not shown) in which the first source 310 containing), the second source 320 containing the second host H2, and the third source 330 containing the first dopant D are located. Place it in Thereafter, the first to third sources 310, 320, and 330 are heated to perform a thermal deposition process on the substrate 300.

In this case, the second source 320 and the third source 330 are sealed by the shutter 340, the first host H1 is deposited on the substrate 330 only in the first source 310. do. That is, only the first host H1 of the hole transport type is deposited on the substrate 300 to form the second hole transport layer 222.

Next, as shown in FIG. 5B, all the shutters 340 are removed and thermal evaporation is performed to remove all of the first host H1, the second host H2, and the first dopant D1. Deposit. Accordingly, the red light emitting material pattern 224 including the first host H1, the second host H2, and the first dopant D1 is formed.

Next, as shown in FIG. 5C, the first source 310 and the third source 330 are sealed with a shutter 340 and thermally deposited to deposit only the second host H2. Thus, the first electron transport layer 226 composed of only the second host of the electron transport type is formed.

As described above, the organic light emitting diode of the present invention has the effect of improving the light output efficiency by using the microcavity effect.

Further, a light emitting material pattern in the red and green pixel areas is formed of a first host of a hole transporting type, a second host of an electron transporting type and a dopant, and comprises a hole transport layer comprising only the first host of a hole transporting type on the light emitting material pattern; By forming the electron transport layer composed of only the second host of the electron transport type in one chamber, it is possible to provide an organic light emitting device having a simple manufacturing process and reduced manufacturing cost.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It can be understood that

210: anodes 212, 222, 224: hole transport layer
224, 234, 240: light emitting material pattern
226, 236, and 242: electron transport layer
260: cathode

Claims (13)

An anode formed in each of the red, green, and blue pixel areas;
A first hole transport layer formed on each of the red, green, and blue pixel regions and positioned on the anode;
A second hole transport layer on the first hole transport layer, the second hole transport layer comprising a first host of a hole transport type, a second host of the first host and an electron transport type, and a first dopant in the red pixel region; A first organic material layer comprising a light emitting material pattern and a first electron transport layer formed of the second host;
A second organic material layer on the first hole transport layer in the green pixel region, the second hole transport layer, the second organic material layer including a green light emitting material pattern and a second electron transport layer;
A green light emitting material pattern positioned on the first hole transport layer in the blue pixel area;
A third electron transport layer on the green light emitting material pattern;
Cathodes positioned above the first to third electron transport layers
An organic light emitting diode comprising a.
The method of claim 1,
The green light emitting material pattern includes a third host of a hole transporting type, a fourth host and a second dopant of an electron transporting type, the third hole transporting layer of the third host, and the second electron transporting layer of the An organic light emitting diode comprising a fourth host.
The method of claim 2,
The HOMO value of the third host is 5.2 ~ 5.6 eV, the LUMO value is 2.2 ~ 2.6 eV, the HOMO value of the fourth host is 5.7 ~ 6.1 eV and the LUMO value is 2.6 ~ 3.0 eV diode.
The method of claim 1,
The HOMO value of the first host is 5.2 ~ 5.6 eV, the LUMO value is 2.2 ~ 2.6 eV, the HOMO value of the second host is 5.7 ~ 6.1 eV and the LUMO value is 2.6 ~ 3.0 eV diode.
The method of claim 1,
The first host is an organic light emitting diode, characterized in that selected from carbazole derivatives or triphenylamine derivatives.
The method of claim 1,
The second host is an organic light emitting diode, characterized in that selected from oxadiazole derivatives, 1,2,4-triazole derivatives or 1,3,5-triazine derivatives.
The method of claim 1,
A first distance in the red pixel region, a second distance smaller than the first distance in the blue pixel region, and a second distance smaller than the first distance and larger than the second distance in the green pixel region. An organic light emitting diode, characterized in that three distances.
The method of claim 7, wherein
The thickness of the second hole transport layer is larger than the thickness of the third hole transport layer.
The method of claim 1,
The cathode is an organic light emitting diode, characterized in that made of an alloy of magnesium and silver and has a transflective property.
Forming an anode covering the red, green, and blue pixel areas on the substrate on which the red, green, and blue pixel areas are defined;
Forming a first hole transport layer on the anode;
The substrate on which the first hole transporting layer is formed is formed in a chamber in which a first source containing a first hole transporting type host, a second source containing an electron transporting second host, and a third source containing a dopant are located. Position and seal the second and third sources with a shutter and heat-deposit to deposit the first host to form a second hole transport layer on the first hole transport layer in the red pixel region, and then remove the shutter. Thermally depositing the first host, the second host, and the dopant to form a red light emitting material pattern on the second hole transport layer, sealing the first and third sources with a shutter, and thermally depositing the first and third sources. Forming a first electron transport layer on the red light emitting material pattern by depositing a second host;
Continuously depositing a third hole transport layer, a green light emitting material pattern, and a second transfer transport layer on the first hole transport layer in the green pixel region;
Forming a blue light emitting material pattern on the first hole transport layer in the blue pixel region;
Forming a third electron transporting layer on the blue light emitting material pattern;
Forming a cathode on the first to third electron transport layers
Method for producing an organic light emitting diode comprising a.
11. The method of claim 10,
The HOMO value of the first host is 5.2 ~ 5.6 eV, the LUMO value is 2.2 ~ 2.6 eV, the HOMO value of the second host is 5.7 ~ 6.1 eV and the LUMO value is 2.6 ~ 3.0 eV Method of manufacturing a diode.
11. The method of claim 10,
The first host is a method of manufacturing an organic light emitting diode, characterized in that selected from carbazole derivatives or triphenylamine derivatives.
11. The method of claim 10,
The second host is a method of manufacturing an organic light emitting diode, characterized in that selected from oxadiazole derivatives, 1,2,4-triazole derivatives or 1,3,5-triazine derivatives.

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