CN1841813A - Organic el element - Google Patents
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- CN1841813A CN1841813A CN 200610058574 CN200610058574A CN1841813A CN 1841813 A CN1841813 A CN 1841813A CN 200610058574 CN200610058574 CN 200610058574 CN 200610058574 A CN200610058574 A CN 200610058574A CN 1841813 A CN1841813 A CN 1841813A
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Abstract
The object of this invention is to provide a top emission style organic EL element having an upper electrode having low resistance and transmitting visible light. This top emission style organic EL element is composed by sequentially forming, on a lower electrode functioning as a negative electrode, an electron transport layer, a luminescent layer, a hole injection layer, and the upper electrode functioning as a positive electrode. In the top emission style organic EL element, the upper electrode transmitting visible light is formed by sequentially stacking, from the lower electrode side, a transparent electrode layer, a metal electrode layer and another transparent electrode layer.
Description
Technical field
The present invention relates to organic EL (electroluminescent) element.
Background technology
Because organic EL is a self-emission device, visual excellent, thereby not only can be used as thin display, also be expected to be applied as ligthing paraphernalia.This organic EL generally is from the luminous bottom-emission structure of lower electrode side: ITO transparency electrodes such as (indium tin oxides) is set and as anode at substrate, the luminescent layer that is made of organic EL Material is set on it, and the top of this luminescent layer is provided with the layer that is made of metal film and as negative electrode then.With respect to this general structure, also have top lighting structure: making upper electrode is the transparency electrode of ITO etc., and luminescent layer is set under it, and lower electrode is set then, makes that the light from luminescent layer sends from upper electrode one side.
In addition, when with organic EL when the display unit, the mode that drives pixel has passive type of drive and active type of drive, active type of drive is very outstanding at aspects such as each pixels of drive simultaneously.When adopting this active type of drive to make the display unit of large-screen, need on lower basal plate, be formed for driving the TFT (thin-film transistor) of each pixel.Here, for the structure of bottom-emission, if this TFT is formed on the lower basal plate, then because the existence of TFT and the efficient of sending that can hinder light.For this point, when adopting top lighting structure, can not hinder luminous efficiency even on lower basal plate, form TFT yet.
Non-patent literature 1: organic EL Material and the display Chuner Mitsumasa chief editor M of Co., Ltd. C publish.
But, if the display unit of large display screen adopts the top lighting structure and the active type of drive of organic EL, the distribution of the upper electrode that will extend, thus needs reduce the resistance value of distribution.On the other hand, owing to be top lighting structure, so upper electrode also must be transparent.Thereby the problem to be solved in the present invention is the resistance value of keeping the transparency and reducing upper electrode, promptly makes low resistance transparent electrode.
Summary of the invention
Therefore, the organic EL that the purpose of this invention is to provide the top light emitting mode of the upper electrode that has low resistance and can see through visible light.
In order to achieve the above object, the invention of first scheme is a kind of organic EL, it forms electron transfer layer, luminescent layer, hole transmission layer successively and plays anode function on the lower electrode that plays cathode function upper electrode, it is characterized in that, described upper electrode can see through visible light, and described upper electrode forms by stacking gradually transparent electrode layer, metal electrode layer and transparent electrode layer from described lower electrode one side.
In addition, the invention of alternative plan relates to the described organic EL of first scheme, it is characterized in that, described lower floor transparent electrode layer and described top transparent electrode layer are that material forms with ITO (indium tin oxide), and described middle level transparent metal layer is be material formation with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any.
In addition, the invention of third party's case relates to the described organic EL of first scheme, it is characterized in that, described lower floor transparent electrode layer is that material forms with ITO (indium tin oxide), described middle level transparent metal layer is to be that material forms with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any, and described top transparent electrode layer be material formation with IZO (indium-zinc oxide).
In addition, the invention of cubic case relates to the described organic EL of first scheme, it is characterized in that, described lower floor transparent electrode layer is that material forms with IZO (indium-zinc oxide), described middle level transparent metal layer is to be that material forms with among A1 (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any, and described top transparent electrode layer be material formation with ITO (indium tin oxide).
In addition, the invention of the 5th scheme relates to the described organic EL of first scheme, it is characterized in that, described lower floor transparent electrode layer and described top transparent electrode layer are that material forms with IZO (indium tin oxide), and described middle level transparent metal layer is be material formation with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any.
In addition, the invention of the 6th scheme relates to the described organic EL of arbitrary scheme in first to the 5th scheme, it is characterized in that, the thickness of described lower floor transparent electrode layer is more than or equal to 50 and smaller or equal to 1000 .
In addition, the invention of the 7th scheme relates to the described organic EL of arbitrary scheme in first to the 5th scheme, it is characterized in that, the thickness of described lower floor transparent electrode layer is more than or equal to 100 and smaller or equal to 500 .
In addition, the invention of case from all directions relates to the described organic EL of arbitrary scheme in first to the 5th scheme, it is characterized in that the thickness of described middle level transparent metal layer is more than or equal to 10 and smaller or equal to 200 .
In addition, the invention of the 9th scheme relates to the described organic EL of arbitrary scheme in first to the 5th scheme, it is characterized in that, the thickness of described middle level transparent metal layer is more than or equal to 30 and smaller or equal to 150 .
In addition, the invention of the tenth scheme relates to the described organic EL of arbitrary scheme in first to the 5th scheme, it is characterized in that, the thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 .
In addition, the invention of the 11 scheme relates to the described organic EL of arbitrary scheme in first to the 5th scheme, it is characterized in that, the thickness of described lower floor transparent electrode layer is more than or equal to 100 and smaller or equal to 500 , the thickness of described middle level transparent metal layer is more than or equal to 30 and smaller or equal to 150 , and the thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 .
In addition, the invention of the 12 scheme relates to the described organic EL of arbitrary scheme in first to the 5th scheme, it is characterized in that, the thickness of described lower floor transparent electrode layer is more than or equal to 50 and smaller or equal to 1000 , the thickness of described middle level transparent metal layer is more than or equal to 10 and smaller or equal to 200 , and the thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 .
In addition, the invention of the 13 scheme is a kind of organic EL, it forms hole transmission layer, luminescent layer, electron transfer layer successively and plays cathode function on the described lower electrode that plays anode function upper electrode, it is characterized in that, described upper electrode can see through visible light, and described upper electrode forms by stacking gradually lower floor's transparent electrode layer, middle level transparency electrode metal level and top transparent electrode layer from described lower electrode one side.
In addition, the invention of the tenth cubic case relates to the described organic EL of the 13 scheme, it is characterized in that, described lower floor transparent electrode layer and described top transparent electrode layer are that material forms with ITO (indium tin oxide), and described middle level transparent metal layer is be material formation with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any.
In addition, the invention of the 15 scheme relates to the described organic EL of the 13 scheme, it is characterized in that, described lower floor transparent electrode layer is that material forms with ITO (indium tin oxide), described middle level transparent metal layer is to be that material forms with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any, and described top transparent electrode layer be material formation with IZO (indium-zinc oxide).
In addition, the invention of the 16 scheme relates to the described organic EL of the 13 scheme, it is characterized in that, described lower floor transparent electrode layer is that material forms with IZO (indium-zinc oxide), described middle level transparent metal layer is to be that material forms with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any, and described top transparent electrode layer be material formation with ITO (indium tin oxide).
In addition, the invention of the 17 scheme relates to the described organic EL of the 13 scheme, it is characterized in that, described lower floor transparent electrode layer and described top transparent electrode layer are that material forms with IZO (indium tin oxide), and described middle level transparent metal layer is be material formation with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any.
In addition, the tenth invention of case from all directions relates to the described organic EL of arbitrary scheme in the 13 to the 17 scheme, it is characterized in that the thickness of described lower floor transparent electrode layer is more than or equal to 50 and smaller or equal to 1000 .
In addition, the invention of the 19 scheme relates to the described organic EL of arbitrary scheme in the 13 to the 17 scheme, it is characterized in that, the thickness of described lower floor transparent electrode layer is more than or equal to 100 and smaller or equal to 500 .
In addition, the invention of the 20 scheme relates to the described organic EL of arbitrary scheme in the 13 to the 17 scheme, it is characterized in that, the thickness of described middle level transparent metal layer is more than or equal to 10 and smaller or equal to 200 .
In addition, the invention of the 21 scheme relates to the described organic EL of arbitrary scheme in the 13 to the 17 scheme, it is characterized in that, the thickness of described middle level transparent metal layer is more than or equal to 30 and smaller or equal to 150 .
In addition, the invention of the 22 scheme relates to the described organic EL of arbitrary scheme in the 13 to the 17 scheme, it is characterized in that, the thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 .
In addition, the invention of the 23 scheme relates to the described organic EL of arbitrary scheme in the 13 to the 17 scheme, it is characterized in that, the thickness of described lower floor transparent electrode layer is more than or equal to 100 and smaller or equal to 500 , the thickness of described middle level transparent metal layer is more than or equal to 30 and smaller or equal to 150 , and the thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 .
In addition, the invention of the 20 cubic case relates to the described organic EL of arbitrary scheme in the 13 to the 17 scheme, it is characterized in that, the thickness of described lower floor transparent electrode layer is more than or equal to 50 and smaller or equal to 1000 , the thickness of described middle level transparent metal layer is more than or equal to 10 and smaller or equal to 200 , and the thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 .
The invention effect
According to the described invention of first scheme, send the organic EL of top light emitting mode of light at upper electrode from anode function, the resistance value of upper electrode can be reduced an about numerical digit (digit), thereby forming, the organic EL that promptly uses the top light emitting mode has large-area area source, and when carrying out high brightness luminescent, also caloric value can be reduced, thereby the problem that be full of cracks takes place upper transparent electrode can be solved.
In addition, according to the invention of alternative plan to the 11 schemes, also can obtain the effect identical with the invention of first scheme.
In addition, according to the invention of the 12 scheme, when obtaining the effect identical, can also reduce the deterioration of transparency with the invention of first scheme.
In addition, invention according to the 13 scheme, send the organic EL of top light emitting mode of light at upper electrode from cathode function, the resistance value of upper electrode can be reduced an about numerical digit, thereby forming, the organic EL that promptly uses the top light emitting mode has large-area area source, and when carrying out high brightness luminescent, also can reduce caloric value, thereby can solve the problem that be full of cracks takes place upper transparent electrode.
In addition, the invention according to the tenth cubic case to the 22 schemes also can obtain the effect identical with the invention of the 13 scheme.
In addition, according to the invention of the 23 scheme, when obtaining the effect identical, can also reduce the deterioration of transparency with the invention of the 13 scheme.
Description of drawings
Fig. 1 is the sectional view that the brief configuration of the organic EL in first execution mode is shown;
Fig. 2 is the sectional view that the brief configuration of the organic EL in second execution mode is shown;
Fig. 3 is the image that the organic EL of be full of cracks has taken place.
Embodiment
Below, describe being used to implement best mode of the present invention with reference to accompanying drawing.
(first execution mode)
First execution mode as anode, and has constituted the transparency electrode of the three-decker of cathode function with lower electrode at upper electrode in the organic EL of top light emitting mode.Below, describe based on accompanying drawing.
Fig. 1 is the sectional view that the brief configuration of the organic EL in the first embodiment of the invention is shown.In Fig. 1, label 100 is organic ELs of the top light emitting mode in first execution mode.The 108th, substrate.The 107th, the lower electrode of an anode function.The 106th, hole transmission layer.The 105th, luminescent layer.The 104th, electron transfer layer.The 109th, the upper electrode of a cathode function.The 103rd, lower floor's transparent electrode layer.The 102nd, middle level transparency electrode metal level.The 101st, the top transparent electrode layer.
The organic EL of this first execution mode has formed the lower electrode 107 of an anode function on substrate 108.Lower electrode 107 is to form film formed by sputtering method with ITO or IZO.The hole transmission layer 106, luminescent layer 105, the electron transfer layer 104 that form by organic EL Material on lower electrode 107, have been formed.These hole transmission layers 106, luminescent layer 105 and electron transfer layer 104 are formed by employed hole mobile material, electron transport material and fluorchrome etc. in the general organic EL.Formed upper electrode 109 on electron transfer layer 104, upper electrode 109 is by stacking gradually the three-decker of lower floor's transparent electrode layer 103, middle level transparency electrode metal level 102 and top transparent electrode layer 101 from lower electrode one side and constituting.The main feature of the organic EL of present embodiment is the structure of this upper electrode.Lower floor's transparent electrode layer 103 forms ITO or IZO film forming by sputtering method.The thickness of lower floor's transparent electrode layer 103 is 50 to 1000 , is preferably 100 to 500 .In addition, the middle level transparency electrode metal level 102 that is arranged on it forms Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium), any metal film forming of Ta (tantalum) by sputtering method.The thickness of middle level transparency electrode metal level 102 is 10 to 200 , is preferably 30 to 150 .In addition, the top transparent electrode layer 101 that is positioned on it forms ITO or IZO film forming by sputtering method.The thickness of top transparent electrode layer 101 is 100 to 2000 .
(effect of first execution mode and embodiment)
By upper electrode is made three-decker as first execution mode, the deterioration of transparency can be suppressed to bottom line, and can reduce resistance value significantly.
[table 1]
| The structure of upper electrode | Metal film thickness | Film resistor (Ω/) | ||
| ?A1 | First embodiment | ?IZO/Ag/IZO | ?Ag：100 | ?6.3 |
| ?A2 | First comparative example | ?IZO | ?48.7 | |
| ?B1 | Second embodiment | ?ITO/Ag/ITO | ?Ag：100 | ?4.8 |
| ?B2 | Second comparative example | ?ITO | ?36.9 |
In table 1, resistance value in the example of first embodiment of basis first execution mode of upper transparent electrode being made three-decker and second embodiment and common single layer structure, upper transparent electrode is compared.In first embodiment, formed lower floor's transparency electrode 103 by IZO, formed middle level transparency electrode metal level 102 by Ag, and formed top transparent electrode layer 101 by IZO.In addition, in a second embodiment, formed lower floor's transparent electrode layer 103, formed middle level transparency electrode metal level 102, formed top transparent electrode layer 101 by ITO by Ag by ITO.The capable film resistor that shows first embodiment of A1, the capable film resistor that shows first comparative example corresponding (having formed the single layer structure of upper electrode by IZO) of A2 with first embodiment.Similarly, the row of B1 shows the film resistor of second embodiment, the capable film resistor that shows second comparative example corresponding with second embodiment (having been formed the single layer structure of upper electrode by ITO) of B2.As shown in table 1, in first embodiment, be 48.7 Ω/ with respect to the film resistor in the existing structure, the film resistor of the upper electrode of first embodiment is 6.3 Ω/, resistance value be about first comparative example resistance value 13%.In addition, under the situation of second embodiment, be 36.9 Ω/ with respect to the film resistor in the existing structure, the film resistor of the upper electrode of second embodiment is 4.8 Ω/, resistance value be about second comparative example resistance value 13%.So, adopt the originally three-decker of first execution mode, can reduce the resistance of upper electrode greatly by upper electrode.In organic EL with existing upper electrode structure, if make organic EL high brightness luminescent, then because the flowing etc. of thermal diffusion problem and heavy current, transparency electrode can chap, but, can prevent the generation of described be full of cracks by adopting the upper electrode of the three-decker that this first execution mode relates to.Fig. 3 shows the actual image that the organic EL of above-mentioned be full of cracks has taken place in the single layer structure in the past that is only formed by ITO or IZO. Label 301 and 302 is the be full of cracks that taken place.
When the organic EL with the top light emitting mode is used as area source, and when carrying out large tracts of land, the resistance lowering of transparency electrode is necessary, if adopt the organic EL of this first execution mode, just can realize the resistance lowering of described transparency electrode, from realizing large tracts of landization as the top light emitting mode organic EL of area source.
(second execution mode)
Second execution mode is opposite with the situation of first execution mode, in the organic EL of top light emitting mode, lower electrode as negative electrode, and has been constituted the transparency electrode of the three-decker of anode function at upper electrode.Below, describe based on accompanying drawing.
Fig. 2 is the sectional view that the brief configuration of the organic EL in the second embodiment of the invention is shown.In Fig. 2, label 200 is organic ELs of the top light emitting mode in second execution mode.The 208th, substrate.The 207th, the lower electrode of a cathode function.The 206th, electron transfer layer.The 205th, luminescent layer.The 204th, hole transmission layer.The 209th, the upper electrode of an anode function.The 203rd, lower floor's transparent electrode layer.The 202nd, middle level transparency electrode metal level.The 201st, the top transparent electrode layer.
The organic EL of this second execution mode has formed the lower electrode 207 of a cathode function on substrate 208.Lower electrode 207 is to form by sputtering method or vapour deposition method film forming with among Al (aluminium), Ag (silver), Cr (chromium), Ni (nickel), Ti (titanium), Ta (tantalum), ITO, the IZO any.The electron transfer layer 206, luminescent layer 205, the hole transmission layer 204 that form by organic EL Material on lower electrode 207, have been formed.These electron transfer layers 206, luminescent layer 205 and hole transmission layer 204 are formed by employed hole mobile material, electron transport material and fluorchrome etc. in the general organic EL.Formed upper electrode 209 on hole transmission layer 204, upper electrode 209 is by stacking gradually the three-decker of lower floor's transparent electrode layer 203, middle level transparency electrode metal level 202 and top transparent electrode layer 201 from lower electrode one side and constituting.Identical with the situation of first execution mode, the main feature of the organic EL of this second execution mode is the structure of this upper electrode.Lower floor's transparent electrode layer 203 forms ITO or IZO film forming by sputtering method.The thickness of lower floor's transparent electrode layer 203 is 50 to 1000 , is preferably 100 to 500 .In addition, the middle level transparency electrode metal level 202 that is arranged on it forms by sputtering method any metal film forming with Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium), Ta (tantalum).The thickness of middle level transparency electrode metal level 202 is 10 to 200 , is preferably 30 to 150 .In addition, the top transparent electrode layer 201 that is positioned on it forms ITO or IZO film forming by sputtering method.The thickness of top transparent electrode layer 201 is 100 to 2000 .
(effect of second execution mode and embodiment)
The organic EL of the second execution mode also situation with first execution mode is identical, by upper electrode is made three-decker, the deterioration of transparency can be suppressed to bottom line, and can reduce resistance value significantly, thereby can obtain the effect identical with first execution mode.
Claims (24)
1. organic EL, the upper electrode that forms electron transfer layer, luminescent layer, hole transmission layer successively and play anode function on the lower electrode that plays cathode function is characterized in that described upper electrode can see through visible light,
Described upper electrode forms by stack gradually transparent electrode layer (below be also referred to as " lower floor's transparent electrode layer "), metal electrode layer (below be also referred to as " middle level transparency electrode metal level ") and transparent electrode layer (below be also referred to as " top transparent electrode layer ") from described lower electrode one side.
2. organic EL as claimed in claim 1 is characterized in that,
Described lower floor transparent electrode layer and described top transparent electrode layer are that material forms with ITO (indium tin oxide),
Described middle level transparent metal layer is to be that material forms with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any.
3. organic EL as claimed in claim 1 is characterized in that,
Described lower floor transparent electrode layer is that material forms with ITO (indium tin oxide),
Described middle level transparent metal layer is to be that material forms with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any,
Described top transparent electrode layer is that material forms with IZO (indium-zinc oxide).
4. organic EL as claimed in claim 1 is characterized in that,
Described lower floor transparent electrode layer is that material forms with IZO (indium-zinc oxide),
Described middle level transparent metal layer is to be that material forms with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any,
Described top transparent electrode layer is that material forms with ITO (indium tin oxide).
5. organic EL as claimed in claim 1 is characterized in that,
Described lower floor transparent electrode layer and described top transparent electrode layer are that material forms with IZO (indium tin oxide),
Described middle level transparent metal layer is to be that material forms with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any.
6. as each described organic EL in the claim 1 to 5, it is characterized in that the thickness of described lower floor transparent electrode layer is more than or equal to 50 and smaller or equal to 1000 .
7. as each described organic EL in the claim 1 to 5, it is characterized in that the thickness of described lower floor transparent electrode layer is more than or equal to 100 and smaller or equal to 500 .
8. as each described organic EL in the claim 1 to 5, it is characterized in that the thickness of described middle level transparent metal layer is more than or equal to 10 and smaller or equal to 200 .
9. as each described organic EL in the claim 1 to 5, it is characterized in that the thickness of described middle level transparent metal layer is more than or equal to 30 and smaller or equal to 150 .
10. as each described organic EL in the claim 1 to 5, it is characterized in that the thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 .
11. as each described organic EL in the claim 1 to 5, it is characterized in that,
The thickness of described lower floor transparent electrode layer is more than or equal to 100 and smaller or equal to 500 ,
The thickness of described middle level transparent metal layer is more than or equal to 30 and smaller or equal to 150 ,
The thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 .
12. as each described organic EL in the claim 1 to 5, it is characterized in that,
The thickness of described lower floor transparent electrode layer is more than or equal to 50 and smaller or equal to 1000 ,
The thickness of described middle level transparent metal layer is more than or equal to 10 and smaller or equal to 200 ,
The thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 .
13. an organic EL, the upper electrode that forms hole transmission layer, luminescent layer, electron transfer layer successively and play cathode function on the described lower electrode that plays anode function is characterized in that described upper electrode can see through visible light,
Described upper electrode forms by stacking gradually lower floor's transparent electrode layer, middle level transparency electrode metal level and top transparent electrode layer from described lower electrode one side.
14. organic EL as claimed in claim 13 is characterized in that,
Described lower floor transparent electrode layer and described top transparent electrode layer are that material forms with ITO (indium tin oxide),
Described middle level transparent metal layer is to be that material forms with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any.
15. organic EL as claimed in claim 13 is characterized in that,
Described lower floor transparent electrode layer is that material forms with ITO (indium tin oxide),
Described middle level transparent metal layer is to be that material forms with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any,
Described top transparent electrode layer is that material forms with IZO (indium-zinc oxide).
16. organic EL as claimed in claim 13 is characterized in that,
Described lower floor transparent electrode layer is that material forms with IZO (indium-zinc oxide),
Described middle level transparent metal layer is to be that material forms with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any,
Described top transparent electrode layer is that material forms with ITO (indium tin oxide).
17. organic EL as claimed in claim 13 is characterized in that,
Described lower floor transparent electrode layer and described top transparent electrode layer are that material forms with IZO (indium tin oxide),
Described middle level transparent metal layer is to be that material forms with among Al (aluminium), Ag (silver), Au (gold), Cu (copper), Mo (molybdenum), Cr (chromium), Ni (nickel), Pt (platinum), Ti (titanium) or the Ta (tantalum) any.
18., it is characterized in that the thickness of described lower floor transparent electrode layer is more than or equal to 50 and smaller or equal to 1000 as each described organic EL in the claim 13 to 17.
19., it is characterized in that the thickness of described lower floor transparent electrode layer is more than or equal to 100 and smaller or equal to 500 as each described organic EL in the claim 13 to 17.
20., it is characterized in that the thickness of described middle level transparent metal layer is more than or equal to 10 and smaller or equal to 200 as each described organic EL in the claim 13 to 17.
21., it is characterized in that the thickness of described middle level transparent metal layer is more than or equal to 30 and smaller or equal to 150 as each described organic EL in the claim 13 to 17.
22., it is characterized in that the thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 as each described organic EL in the claim 13 to 17.
23. as each described organic EL in the claim 13 to 17, it is characterized in that,
The thickness of described lower floor transparent electrode layer is more than or equal to 100 and smaller or equal to 500 ,
The thickness of described middle level transparent metal layer is more than or equal to 30 and smaller or equal to 150 ,
The thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 .
24. as each described organic EL in the claim 13 to 17, it is characterized in that,
The thickness of described lower floor transparent electrode layer is more than or equal to 50 and smaller or equal to 1000 ,
The thickness of described middle level transparent metal layer is more than or equal to 10 and smaller or equal to 200 ,
The thickness of described top transparent electrode layer is more than or equal to 100 and smaller or equal to 2000 .
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