CN2779786Y - Drive circuit for high-frequency induction heating power supply - Google Patents
Drive circuit for high-frequency induction heating power supply Download PDFInfo
- Publication number
- CN2779786Y CN2779786Y CN 200520100520 CN200520100520U CN2779786Y CN 2779786 Y CN2779786 Y CN 2779786Y CN 200520100520 CN200520100520 CN 200520100520 CN 200520100520 U CN200520100520 U CN 200520100520U CN 2779786 Y CN2779786 Y CN 2779786Y
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- CN
- China
- Prior art keywords
- field
- effect transistor
- voltage source
- circuit
- power supply
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 15
- 230000006698 induction Effects 0.000 title claims abstract description 15
- 230000005669 field effect Effects 0.000 claims abstract description 37
- 238000007493 shaping process Methods 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
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- General Induction Heating (AREA)
Abstract
The utility model relates to a drive circuit for a high-frequency induction heating power supply, which comprises a coining and matching circuit and two full symmetric elementary circuits connected with the output terminal of the coining and matching circuit, wherein the coining and matching circuit is composed of a blocking capacitor, an isolation transformer, an NAND gate and a transistor. Each elementary circuit comprises two DC voltage sources connected in series, two field-effect transistors and two resistors, wherein the other end of the first DC voltage source is connected with a grid electrode of the first field-effect transistor and one end of the first resistor together, the other end of the first resistor is connected with a source electrode of the first field-effect transistor and then is connected with a DC power supply Vcc, the other end of the second DC voltage source is connected with a grid electrode of the second field-effect transistor and one end of the second resistor together, the other end of the second resistor is connected with a source electrode of the second field-effect transistor and then is earthed, and the drain electrodes of the two field-effect transistors are connected with each other. The drive circuit has the advantages of simple structure, strong anti-interference ability, high applicable frequency, strong driving ability, good versatility, reliable operation, etc.
Description
Technical field
The utility model relates to the drive circuit that is used for high-frequency induction heating power.
Background technology
The drive circuit that is used for high-frequency induction heating power at present comprises capacitance, isolating transformer, the shaping match circuit that NAND gate and triode are formed and be connected two field-effect transistors of shaping match circuit output, it is not very high induction heating power that this drive circuit only is fit to frequency, is not suitable for the high-power high-frequency induction heating power.Along with improving constantly of high-power insulated gate bipolar transistor (IGBT) and power field effect transistor (VMOS) device capacity and cost performance, high-power superaudio and high-frequency induction heating power have also obtained fast development, and therefore the drive circuit that adapts with it also more and more receives publicity.
Summary of the invention
In view of the foregoing, the utility model purpose provides a kind of simple in structure, reliable drive circuit that is used for high-power superaudio and high-frequency induction heating power.
The drive circuit that the utility model is used for high-frequency induction heating power comprises capacitance, isolating transformer, the shaping match circuit that NAND gate and triode are formed and be connected two of the shaping match circuit output element circuits of symmetry fully, each element circuit comprises two direct voltage sources, two field-effect transistors and two resistance, first direct voltage source and second direct voltage source are in series, one end of the grid of the other end of first direct voltage source and first field-effect transistor and first resistance connects altogether, the other end of first resistance with meet DC power supply Vcc after the source electrode of first field-effect transistor links to each other, one end of the grid of the other end of second direct voltage source and second field-effect transistor and second resistance connects altogether, ground connection after the other end of second resistance links to each other with the source electrode of second field-effect transistor, first, the drain electrode of the second two field-effect transistors links to each other.
Two symmetrical fully element circuits have four field-effect transistors in the utility model drive circuit, formed bridge inverter main circuit with two brachium pontis, the pulse signal of input driving circuit is converted into single power supply the drive signal with positive negative level through two tunnel pulses of isolating, shaping produces with same frequency and reversed-phase after mating by bridge inverter main circuit.Solved same brachium pontis under high frequency situations by direct voltage source, easily straight-through up and down problem, and greatly improved the antijamming capability of circuit.
The beneficial effects of the utility model are: simple in structure, antijamming capability is strong; The single power supply power supply, positive negative level output; It is little to delay time, frequency height (can reach 400 kilo hertzs); Driving force is strong, can drive many pipes in parallel in the high-frequency induction heating power simultaneously; Versatility is good, can drive the induction heating power of high frequency serial or parallel connection, also can drive the high-frequency induction heating power of high-power insulated gate bipolar transistor (IGBT) or power field effect transistor (VMOS) device, and is reliable.
Description of drawings
Fig. 1 is the utility model forming circuit figure.
Embodiment
With reference to Fig. 1, the drive circuit that is used for high-frequency induction heating power comprises capacitance C1, isolating transformer B1, the shaping match circuit that NAND gate G1～G4 and triode Q1～Q4 forms and two symmetrical fully element circuits that are connected shaping match circuit output.Each element circuit comprises two direct voltage source E1, E2, two field-effect transistor T1, T2 and two resistance R 1, R2.The first direct voltage source E1 and the second direct voltage source E2 are in series, one end of the grid G of the other end of the first direct voltage source E1 and the first field-effect transistor T1 and first resistance R 1 connects altogether, the other end of first resistance R 1 with meet DC power supply Vcc after the source S of the first field-effect transistor T1 links to each other.One end of the grid G of the other end of the second direct voltage source E2 and the second field-effect transistor T2 and second resistance R 2 connects altogether.Ground connection after the other end of second resistance R 2 links to each other with the source S of the second field-effect transistor T2, the drain D of first, second two field-effect transistors links to each other.
Four field-effect transistor T1～T4 of two symmetrical cell circuit constitute bridge inverter main circuit.Wherein field-effect transistor T1 that links to each other with DC power supply Vcc in two element circuits and T3 are P structure road field-effect transistor, and field-effect transistor T2 that links to each other with ground and T4 are N structure road field-effect transistor.The field-effect transistor T4 that connects ground connection in the field-effect transistor T1 of DC power supply Vcc and second element circuit in the first module circuit is break-make simultaneously, connect the field-effect transistor T4 while break-make of DC power supply Vcc in the first module circuit in the field-effect transistor T2 of ground connection and second element circuit, T1 and T2, T3 and T4 be mutual deviation 180 degree then.OUT1, OUT2 are the output of one group of driving pulse among the figure, and OUT3, OUT4 are the output of another group driving pulse.Said direct voltage source E1, E2 can adopt voltage-stabiliser tube generation in parallel with electric capacity.Input pulse Ug is through isolating, and shaping is mated the back generation and reached-Q with two tunnel anti-phase each other pulse Q frequently, single power supply is converted into the drive signal with positive negative level by bridge inverter main circuit.Solved same brachium pontis under high frequency situations by direct voltage source, straight-through up and down easily problem.
Claims (1)
1. the drive circuit that is used for high-frequency induction heating power, comprise capacitance (C1), isolating transformer (B1), by NAND gate (G1～G4) and triode (the shaping match circuit of Q1～Q4) form, it is characterized in that connecting two element circuits of symmetry fully at the output of shaping match circuit, each element circuit comprises two direct voltage source (E1, E2), two field-effect transistor (T1, T2) and two resistance (R1, R2), first direct voltage source (E1) is in series with second direct voltage source (E2), the grid (G) of the other end of first direct voltage source (E1) and first field-effect transistor (T1) and an end of first resistance (R1) connect altogether, the other end of first resistance (R1) with meet DC power supply Vcc after the source electrode (S) of first field-effect transistor (T1) links to each other, the grid (G) of the other end of second direct voltage source (E2) and second field-effect transistor (T2) and an end of second resistance (R2) connect altogether, ground connection after the other end of second resistance (R2) links to each other with the source electrode (S) of second field-effect transistor (T2), first, the drain electrode (D) of the second two field-effect transistors links to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520100520 CN2779786Y (en) | 2005-02-05 | 2005-02-05 | Drive circuit for high-frequency induction heating power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520100520 CN2779786Y (en) | 2005-02-05 | 2005-02-05 | Drive circuit for high-frequency induction heating power supply |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2779786Y true CN2779786Y (en) | 2006-05-10 |
Family
ID=36753871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520100520 Expired - Fee Related CN2779786Y (en) | 2005-02-05 | 2005-02-05 | Drive circuit for high-frequency induction heating power supply |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2779786Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102857081A (en) * | 2012-09-12 | 2013-01-02 | 洛阳升华感应加热有限公司 | Inversion driving circuit for IGBT (insulated gate bipolar transistor) induction heating power source |
| CN109149913A (en) * | 2017-06-15 | 2019-01-04 | 上海铼钠克数控科技股份有限公司 | Metal-oxide-semiconductor driving circuit |
-
2005
- 2005-02-05 CN CN 200520100520 patent/CN2779786Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102857081A (en) * | 2012-09-12 | 2013-01-02 | 洛阳升华感应加热有限公司 | Inversion driving circuit for IGBT (insulated gate bipolar transistor) induction heating power source |
| CN102857081B (en) * | 2012-09-12 | 2014-10-22 | 洛阳升华感应加热股份有限公司 | Inversion driving circuit for IGBT (insulated gate bipolar transistor) induction heating power source |
| CN109149913A (en) * | 2017-06-15 | 2019-01-04 | 上海铼钠克数控科技股份有限公司 | Metal-oxide-semiconductor driving circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |