CN201113797Y - High end driver circuit - Google Patents
High end driver circuit Download PDFInfo
- Publication number
- CN201113797Y CN201113797Y CNU2007201716936U CN200720171693U CN201113797Y CN 201113797 Y CN201113797 Y CN 201113797Y CN U2007201716936 U CNU2007201716936 U CN U2007201716936U CN 200720171693 U CN200720171693 U CN 200720171693U CN 201113797 Y CN201113797 Y CN 201113797Y
- Authority
- CN
- China
- Prior art keywords
- resistance
- links
- triode
- semiconductor
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Electronic Switches (AREA)
Abstract
The utility model discloses a high-end drive circuit, comprising a dead area setting circuit (401), a push-pull circuit (402) and an isolation transformation circuit (403), which are connected in sequence. The utility model adopts a control signal sent by a control chip and realizes a drive signal of an up and down drive geminate transistor including the high-end drive by the drive circuit of the utility model. Moreover, the drive circuit does not need to be given a pair of symmetrical signals, only one signal is given, thereby greatly widening the range of application. The drive circuit can also adjust the dead area conveniently and has simple implementation method and low cost.
Description
Technical field
The utility model relates to a kind of high-end drive circuit and implementation method, relates in particular to a kind of high-end drive circuit and implementation method that is suitable for up and down pipe.
Background technology
High-side driver is the problem that often runs in the Switching Power Supply topology, resonant circuit for example, active clamp circuit, half-bridge circuit etc.Being better than that high-side driver solves is bad, is directly connected to the Performance And Reliability of Switching Power Supply.
The method of the high-side driver of existing Switching Power Supply has following several:
One, carries the chip of high-side driver
Along with development of technology, the chip of high-side driver has appearred much carrying in the market.This mode advantage is to use simply, and peripheral circuit is simple.Shortcoming is that cost is higher, and owing to be the height integrated chip, its drive current is generally little, is not suitable for large power supply.
Two, use chip for driving to realize high-side driver
As shown in Figure 1, the advantage of this mode is to use conveniently, and the IC replaceability strengthens.Shortcoming is that peripheral circuit is complicated, need control IC to provide the signal of a pair of symmetry, and cost is also than higher.
Three, use drive circuit to realize high-side driver
As shown in Figure 2, this mode is used in some communication power supplies, the reasonable problem that solves high-side driver.The advantage of this method is to be fit to large power supply, and driving force is strong.Shortcoming is the circuit more complicated, and needs a pair of symmetric signal input.
The utility model content
The technical problems to be solved in the utility model provides a kind of high-end drive circuit.
For solving the problems of the technologies described above, the purpose of this utility model is achieved through the following technical solutions.
A kind of high-end drive circuit comprises: The dead time circuit (401), push-pull circuit (402), isolation transforming circuit (403) connect successively; Described The dead time circuit (401) comprises first resistance (R1), first electric capacity (C1), first metal-oxide-semiconductor (Q1), and an end of described first electric capacity (C1) connects the output signal of control chip, and the other end is by first resistance (R1) ground connection; The grid of described first metal-oxide-semiconductor (Q1) is electrically connected with the mid point of first resistance (R1) and first electric capacity (C1), and its drain electrode is electrically connected its source ground with an end of described first electric capacity (C1); Described isolation transforming circuit (403) comprises first diode (D1), second diode (D2), the 4th metal-oxide-semiconductor (Q4) and isolating transformer (T1); The negative electrode of described second diode (D2) links to each other with the power supply (vcc) of described push-pull circuit (402), its anode links to each other with the drain electrode of the 4th metal-oxide-semiconductor (Q4), the grid of the 4th metal-oxide-semiconductor (Q4) is connected with the cathodic electricity of first diode (D1), and the source electrode of the 4th metal-oxide-semiconductor (Q4) links to each other with the anode of first diode (D1) and ground connection; Former limit one end of described isolating transformer (T1) links to each other with the negative electrode of first diode (D1) and links to each other with the output of described push-pull circuit (402), and its other end links to each other with the drain electrode of the 4th metal-oxide-semiconductor (Q4); The secondary of isolating transformer (T1) connects output.
Wherein, push-pull circuit (402) comprises second triode (Q2), the 3rd triode (Q3), power supply (vcc); The collector electrode of described second triode (Q2) connects power supply (vcc) input and links to each other with the negative electrode of described second diode (D2), links to each other with the drain electrode of described first metal-oxide-semiconductor (Q1) after its base stage links to each other with the base stage of the 3rd triode (Q3); The emitter of described second triode (Q2) links to each other with the emitter of the 3rd triode (Q3), and its tie point links to each other with the negative electrode of described first diode (D1); The grounded collector of the 3rd triode (Q3).
Wherein, low-side driver circuitry (404); Low-side driver circuitry (404) comprises second resistance (R2), the 5th metal-oxide-semiconductor (Q5), second electric capacity (C2), the 6th triode (Q6), the 7th triode (Q7); The grid of described the 5th metal-oxide-semiconductor (Q5) is electrically connected with the output signal of control chip, its source ground, its drain electrode is electrically connected with an end of described second electric capacity (C2), the other end ground connection of described second electric capacity (C2), the collector electrode of described the 6th triode (Q6) links to each other with an end of described second electric capacity (C2) by second resistance (R2), the collector electrode of described the 6th triode (Q6) connects power input (vcc), the base stage of the base stage of the 6th triode (Q6) and described the 7th triode (Q7) is connected in parallel on the mid point of second resistance (R2) and second electric capacity (C2), the emitter of described the 6th triode (Q6) links to each other with the emitter of described the 7th triode (Q7), and the emitter of the collector electrode of described the 7th triode (Q7) and the 7th triode (Q7) connects output.
Wherein, described The dead time circuit (401) also comprises the 3rd resistance (R3), the 4th resistance (R4), the drain electrode of described first metal-oxide-semiconductor (Q1) is connected on the output signal of control chip by described the 3rd resistance (R3), one end of described the 4th resistance (R4) links to each other with the grid of first metal-oxide-semiconductor (Q1), and the other end is connected the mid point of first electric capacity (C1) and first resistance (R1).
Wherein, described isolation transforming circuit (403) also comprises the 5th resistance (R5), the 6th resistance (R6), the 7th resistance (R7), and the grid of described the 4th metal-oxide-semiconductor (Q4) links to each other with the negative electrode of first diode (D1) by the 5th resistance (R5); Described the 6th resistance (R6) and the secondary that is connected in parallel on isolating transformer (T1) after the 7th resistance (R7) is connected; Described the 7th resistance (R7) is in parallel with output.
Wherein, described push-pull circuit (402) also comprises the 3rd electric capacity (C3), an end ground connection of described the 3rd electric capacity (C3), another termination power input (vcc) end.
Wherein, described low-side driver circuitry (404) also comprises the 8th resistance (R8), the 9th resistance (R9), and the grid of described the 5th metal-oxide-semiconductor (Q5) links to each other with the output signal of control chip by the 8th resistance (R8); The drain electrode of the 5th metal-oxide-semiconductor (Q5) links to each other with an end of described second electric capacity (C2) by the 9th resistance; The source electrode of the 5th metal-oxide-semiconductor (Q5) links to each other with the other end of second electric capacity (C2) and ground connection.
Wherein, described low-side driver circuitry (404) also comprises the tenth resistance (R10), the 11 resistance (R11), described the tenth resistance (R10) links to each other with the emitter of described the 7th triode (Q7) with the 11 resistance (R11) series connection back one end, and the other end links to each other with the collector electrode of described the 7th triode (Q7); Described the 11 resistance (R11) is in parallel with output.
The control signal that the utility model utilizes control chip to send, by drive circuit of the present utility model, the driving that realizes comprising high-side driver is up and down to the drive signal of pipe.And, only need a given signal just passable because this kind drive circuit does not need given a pair of symmetric signal, so just increased the scope of its application greatly.We can also regulate the dead band easily by this kind drive circuit.And implementation method is simple, and is with low cost.
Description of drawings
Fig. 1 is that prior art 1 realizes circuit diagram;
Fig. 2 is that prior art 2 realizes circuit diagram;
Fig. 3 is the utility model schematic block circuit diagram;
Fig. 4 realizes circuit diagram for the utility model.
Embodiment
The core concept of the utility model method is: the control signal of utilizing control chip to send, by drive circuit of the present utility model, the driving that realizes comprising high-side driver is up and down to the symmetric signal of pipe.The implementation method of this kind high-end drive circuit only needs one road input signal, and the dead band can regulated at will.
For ease of the utility model is further understood, now reach specific embodiment in conjunction with the accompanying drawings the utility model is described in detail.
See also shown in Figure 3, the driving of control IC output separated into two parts at first, a part is through the The dead time circuit, suitable dead band is set after, pass through push-pull amplifier circuit again, increase driving force, pass through isolating transformer then, form the high-side driver signal; Behind another part process The dead time circuit, pass through push-pull amplifier circuit again, form the low side drive signal.
The specific implementation circuit sees also shown in Figure 4ly, comprising: The dead time circuit 401, push-pull circuit 402, isolate transforming circuit 403 and connect successively; Described The dead time circuit 401 comprises first resistance R 1, first capacitor C 1, the first metal-oxide-semiconductor Q1, the 3rd resistance R 3, the 4th resistance R 4, the drain electrode of the described first metal-oxide-semiconductor Q1 is connected on the output signal of control chip by described the 3rd resistance R 3, one end of described the 4th resistance R 4 links to each other with the grid of the first metal-oxide-semiconductor Q1, and the other end is connected the mid point of first capacitor C 1 and first resistance R 1.One end of described first capacitor C 1 connects the output signal of control chip, and the other end is by first resistance R, 1 ground connection; The source ground of the described first metal-oxide-semiconductor Q1; Described isolation transforming circuit 403 comprises the first diode D1, the second diode D2, the 4th metal-oxide-semiconductor Q4, isolating transformer T1, the 5th resistance R 5, the 6th resistance R 6, the 7th resistance R 7, and the grid of described the 4th metal-oxide-semiconductor Q4 links to each other with the negative electrode of the first diode D1 by the 5th resistance R 5; Described the 6th resistance R 6 and the secondary that is connected in parallel on isolating transformer T1 after the 7th resistance R 7 is connected; Described the 7th resistance (R7) is in parallel with output; The negative electrode of the described second diode D2 links to each other with the power supply (vcc) of described push-pull circuit 402, and its anode links to each other with the drain electrode of the 4th metal-oxide-semiconductor Q4, and the source electrode of the 4th metal-oxide-semiconductor Q4 links to each other with the anode of the first diode D1 and ground connection; Former limit one end of described isolating transformer T1 links to each other with the negative electrode of the first diode D1 and links to each other with the output of described push-pull circuit 402, and its other end links to each other with the drain electrode of the 4th metal-oxide-semiconductor Q4; The secondary of isolating transformer T1 connects output.
Push-pull circuit 402 comprises the second triode Q2, the 3rd triode Q3, power supply vcc, the 3rd capacitor C 3; The collector electrode of the described second triode Q2 connects power supply vcc input and links to each other with the negative electrode of the described second diode D2, links to each other with the drain electrode of the described first metal-oxide-semiconductor Q1 after its base stage links to each other with the base stage of the 3rd triode Q3; The emitter of the described second triode Q2 links to each other with the emitter of the 3rd triode Q3, and its tie point links to each other with the negative electrode of the described first diode D1; The grounded collector of the 3rd triode Q3; One end ground connection of described the 3rd electric capacity (C3), another termination power input (vcc) end.
Low-side driver circuitry 404; Low-side driver circuitry 404 comprises second resistance R 2, the 5th metal-oxide-semiconductor Q5, second capacitor C 2, the 6th triode Q6, the 7th triode Q7, the 8th resistance R 8, the 9th resistance R 9, the tenth resistance R the 10, the 11 resistance R 11.The grid of described the 5th metal-oxide-semiconductor Q5 links to each other with the output signal of control chip by the 8th resistance R 8; The drain electrode of the 5th metal-oxide-semiconductor Q5 links to each other with an end of described second capacitor C 2 by the 9th resistance; The source electrode of described the 5th metal-oxide-semiconductor Q5 links to each other with the other end of second capacitor C 2 and ground connection; The collector electrode of described the 6th triode Q6 links to each other with an end of described second capacitor C 2 by second resistance R 2, the collector electrode of described the 6th triode Q6 meets power input vcc, the base stage of the base stage of the 6th triode Q6 and described the 7th triode Q7 is connected in parallel on the mid point of second resistance R 2 and second capacitor C 2, and the emitter of described the 6th triode Q6 links to each other with the emitter of described the 7th triode Q7; Described the tenth resistance (R10) links to each other with the emitter of described the 7th triode (Q7) with the 11 resistance (R11) series connection back one end, and the other end links to each other with the collector electrode of described the 7th triode (Q7); Described the 11 resistance (R11) is in parallel with output.
Its operation principle:
For high-end drive circuit, R1, C1, Q1 forms the The dead time circuit, when IC_Drive_Out provides drive signal (high level), C1 moment is in short-circuit condition, Q1 conducting like this, no drive signal output, when the C1 charging finishes, Q1 turn-offs, and drive signal forms, and is exactly Dead Time during this period of time.We can be by regulating R1, and the parameter of C1 is regulated the time in dead band.
Wherein, Vcc, Q2, Q3 forms and recommends amplifying element, adds D1, D2, the high-end isolation drive signal output element of the common formation of Q4 and isolating transformer T1.When drive signal is high level, Q2, the Q4 conducting, the sense of current is that Vcc passes through Q2, through T1, Q4 is to ground.When drive signal was low level, Q4 turn-offed, and the sense of current is ground, and D1, T1, D2 are to Vcc, and the magnetic core of isolating transformer T1 resets.
Wherein, the effect of R3 is to prevent that the control IC output current is excessive, and the effect of R4 is to prevent that the impact of Q1 is excessive, the effect of R5 be for the impact that prevents Q4 excessive.The effect of R6 is that the speed of drive signal is slowed down, and the effect of R7 is to prevent that driven metal-oxide-semiconductor drive signal is unsettled.The effect of C3 is the filter capacitor as Vcc.
Drive for low side, the effect of Q5 is to make low-side signal and high-side signal anti-phase, forms symmetry output.R2, C2 forms the The dead time that low side drives.Vcc, Q6, Q7 forms the push-pull amplifier circuit that low side drives.
Wherein the effect of R8 is to prevent that the control IC output current is excessive, and the effect of R9 is to prevent that the impact of Q5 is excessive.The effect of R10 is that the speed of drive signal is slowed down, and the effect of R11 is to prevent that driven metal-oxide-semiconductor drive signal is unsettled.The effect of C4 is the filter capacitor as Vcc.
This kind high-end drive circuit is suitable for up and down the high-side driver of pipe, and suitable topology has active clamp circuit, asymmetrical half-bridge circuit, resonant circuit etc.
More than a kind of high-end drive circuit provided by the utility model is described in detail, used specific case herein principle of the present utility model and execution mode are set forth, the explanation of above embodiment just is used for helping to understand core concept of the present utility model; Simultaneously, for one of ordinary skill in the art, according to thought of the present utility model, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as restriction of the present utility model.
Claims (8)
1, a kind of high-end drive circuit is characterized in that, comprising: The dead time circuit (401), push-pull circuit (402), isolation transforming circuit (403) connect successively; Described The dead time circuit (401) comprises first resistance (R1), first electric capacity (C1), first metal-oxide-semiconductor (Q1), and an end of described first electric capacity (C1) connects the output signal of control chip, and the other end is by first resistance (R1) ground connection; The grid of described first metal-oxide-semiconductor (Q1) is electrically connected with the mid point of first resistance (R1) and first electric capacity (C1), and its drain electrode is electrically connected its source ground with an end of described first electric capacity (C1); Described isolation transforming circuit (403) comprises first diode (D1), second diode (D2), the 4th metal-oxide-semiconductor (Q4) and isolating transformer (T1); The negative electrode of described second diode (D2) links to each other with the power supply (vcc) of described push-pull circuit (402), its anode links to each other with the drain electrode of the 4th metal-oxide-semiconductor (Q4), the grid of the 4th metal-oxide-semiconductor (Q4) is connected with the cathodic electricity of first diode (D1), and the source electrode of the 4th metal-oxide-semiconductor (Q4) links to each other with the anode of first diode (D1) and ground connection; Former limit one end of described isolating transformer (T1) links to each other with the negative electrode of first diode (D1) and links to each other with the output of described push-pull circuit (402), and its other end links to each other with the drain electrode of the 4th metal-oxide-semiconductor (Q4); The secondary of isolating transformer (T1) connects output.
2, high-end drive circuit according to claim 1 is characterized in that, push-pull circuit (402) comprises second triode (Q2), the 3rd triode (Q3), power supply (vcc); The collector electrode of described second triode (Q2) connects power supply (vcc) input and links to each other with the negative electrode of described second diode (D2), links to each other with the drain electrode of described first metal-oxide-semiconductor (Q1) after its base stage links to each other with the base stage of the 3rd triode (Q3); The emitter of described second triode (Q2) links to each other with the emitter of the 3rd triode (Q3), and its tie point links to each other with the negative electrode of described first diode (D1); The grounded collector of the 3rd triode (Q3).
3, high-end drive circuit according to claim 1 and 2 is characterized in that, low-side driver circuitry (404); Low-side driver circuitry (404) comprises second resistance (R2), the 5th metal-oxide-semiconductor (Q5), second electric capacity (C2), the 6th triode (Q6), the 7th triode (Q7); The grid of described the 5th metal-oxide-semiconductor (Q5) is electrically connected with the output signal of control chip, its source ground, its drain electrode is electrically connected with an end of described second electric capacity (C2), the other end ground connection of described second electric capacity (C2), the collector electrode of described the 6th triode (Q6) links to each other with an end of described second electric capacity (C2) by second resistance (R2), the collector electrode of described the 6th triode (Q6) connects power input (vcc), the base stage of the base stage of the 6th triode (Q6) and described the 7th triode (Q7) is connected in parallel on the mid point of second resistance (R2) and second electric capacity (C2), the emitter of described the 6th triode (Q6) links to each other with the emitter of described the 7th triode (Q7), and the emitter of the collector electrode of described the 7th triode (Q7) and the 7th triode (Q7) connects output.
4, high-end drive circuit according to claim 2, it is characterized in that, described The dead time circuit (401) also comprises the 3rd resistance (R3), the 4th resistance (R4), the drain electrode of described first metal-oxide-semiconductor (Q1) is connected on the output signal of control chip by described the 3rd resistance (R3), one end of described the 4th resistance (R4) links to each other with the grid of first metal-oxide-semiconductor (Q1), and the other end is connected the mid point of first electric capacity (C1) and first resistance (R1).
5, high-end drive circuit according to claim 4, it is characterized in that, described isolation transforming circuit (403) also comprises the 5th resistance (R5), the 6th resistance (R6), the 7th resistance (R7), and the grid of described the 4th metal-oxide-semiconductor (Q4) links to each other with the negative electrode of first diode (D1) by the 5th resistance (R5); Described the 6th resistance (R6) and the secondary that is connected in parallel on isolating transformer (T1) after the 7th resistance (R7) is connected; Described the 7th resistance (R7) is in parallel with output.
6, high-end drive circuit according to claim 5 is characterized in that, described push-pull circuit (402) also comprises the 3rd electric capacity (C3), an end ground connection of described the 3rd electric capacity (C3), another termination power input (vcc) end.
7, high-end drive circuit according to claim 3, it is characterized in that, described low-side driver circuitry (404) also comprises the 8th resistance (R8), the 9th resistance (R9), and the grid of described the 5th metal-oxide-semiconductor (Q5) links to each other with the output signal of control chip by the 8th resistance (R8); The drain electrode of the 5th metal-oxide-semiconductor (Q5) links to each other with an end of described second electric capacity (C2) by the 9th resistance (R9); The source electrode of the 5th metal-oxide-semiconductor (Q5) links to each other with the other end of second electric capacity (C2) and ground connection.
8, high-end drive circuit according to claim 7, it is characterized in that, described low-side driver circuitry (404) also comprises the tenth resistance (R10), the 11 resistance (R11), described the tenth resistance (R10) links to each other with the emitter of described the 7th triode (Q7) with the 11 resistance (R11) series connection back one end, and the other end links to each other with the collector electrode of described the 7th triode (Q7); Described the 11 resistance (R11) is in parallel with output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201716936U CN201113797Y (en) | 2007-09-19 | 2007-09-19 | High end driver circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201716936U CN201113797Y (en) | 2007-09-19 | 2007-09-19 | High end driver circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201113797Y true CN201113797Y (en) | 2008-09-10 |
Family
ID=39965542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007201716936U Expired - Fee Related CN201113797Y (en) | 2007-09-19 | 2007-09-19 | High end driver circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201113797Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170280B (en) * | 2007-10-17 | 2010-06-02 | 吴壬华 | A realization method of switching tube drive circuit and its circuit |
| CN103438264A (en) * | 2013-09-12 | 2013-12-11 | 中国北方发动机研究所(天津) | High-end driving circuit based on suspension power supply |
-
2007
- 2007-09-19 CN CNU2007201716936U patent/CN201113797Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170280B (en) * | 2007-10-17 | 2010-06-02 | 吴壬华 | A realization method of switching tube drive circuit and its circuit |
| CN103438264A (en) * | 2013-09-12 | 2013-12-11 | 中国北方发动机研究所(天津) | High-end driving circuit based on suspension power supply |
| CN103438264B (en) * | 2013-09-12 | 2016-01-27 | 中国北方发动机研究所(天津) | A kind of high-end drive circuit based on suspended power supply |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101170280B (en) | A realization method of switching tube drive circuit and its circuit | |
| CN202094794U (en) | Bootstrap driving and controlling circuit of gate pole | |
| CN203135829U (en) | Transformer isolation-type gate drive circuit capable of performing negative-voltage switching off | |
| CN109687693A (en) | A kind of driver for isolating and high frequency switch power | |
| CN101771335B (en) | Isolated drive circuit of DC converter | |
| CN101753000A (en) | Power MOS pipe grid drive circuit and method for grid floating and level switching | |
| CN103414354A (en) | Power switch device pulse transformer isolation driving circuit | |
| CN208836102U (en) | A kind of MOSFET driving circuit based on pulse transformer isolation | |
| CN101039076A (en) | Voltage-stabilizing switch power source with voltage ripple detection circuit | |
| CN102299631A (en) | Full-bridge soft switch direct current converter | |
| CN101640527A (en) | IGBT driving circuit capable of realizing signal transmission by pulse modulation demodulation system | |
| CN203377788U (en) | Auxiliary switch tube isolated driving circuit of active clamp flyback circuit | |
| CN203368304U (en) | Novel buck drive circuit | |
| CN103595226B (en) | Transformer isolation symmetrical complement drive circuit | |
| CN204498094U (en) | The modulating pulse drive circuit of Connectors for Active Phased Array Radar T/R assembly | |
| CN202513892U (en) | High power MOS (Metal Oxide Semiconductor) field-effect transistor driving circuit | |
| CN101783582B (en) | Single-input dual-output pulse-width modulation signal generating circuit with adjustable dead time | |
| CN201113797Y (en) | High end driver circuit | |
| CN109245498A (en) | A kind of double-transistor flyback Topology Switch power circuit for realizing driving using transformer leakage inductance | |
| CN106100433B (en) | A kind of pulse power supply circuit suitable for more modulation pattern | |
| CN202931255U (en) | Power amplification driving circuit applied to electric-power carrier communication | |
| CN104158388A (en) | High-end MOSFET driving circuit | |
| CN201113944Y (en) | High speed switch tube floating grid driver circuit | |
| CN201490888U (en) | Multiple DC power supply | |
| CN206650647U (en) | A kind of High Power IGBT Driver Circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080910 Termination date: 20091019 |