CN204046407U - A kind of many level IGBT drive circuit - Google Patents

A kind of many level IGBT drive circuit Download PDF

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Publication number
CN204046407U
CN204046407U CN201420227873.1U CN201420227873U CN204046407U CN 204046407 U CN204046407 U CN 204046407U CN 201420227873 U CN201420227873 U CN 201420227873U CN 204046407 U CN204046407 U CN 204046407U
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China
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circuit
drive circuit
igbt drive
resistance
pole
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CN201420227873.1U
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Chinese (zh)
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李昱
李卫卫
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XI'AN XICHI ELECTRIC POWER TECHNOLOGY Co Ltd
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XI'AN XICHI ELECTRIC POWER TECHNOLOGY Co Ltd
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Abstract

The utility model discloses a kind of low cost many level IGBT drive circuit, comprise DC-isolation power circuit, the first IGBT drive circuit and the second IGBT drive circuit.DC-isolation power circuit comprises high-performance fixed frequency current mode controller UC2845, soft startup circuit for power supply, pulse transformer T1 and out-put supply filter circuit.First IGBT drive circuit is identical with the second IGBT drive circuit, comprises optical couple isolation drive circuit and recommends output driving circuit.The utility model provides a kind of low cost, high performance many level IGBT drive circuit, this circuit peripheral signal is simple, the input of Jin Xu mono-road input power, two-way pwm signal can produce the IGBT drive singal of two-way electrical isolation, has that cost is low, PCB cloth board size is little, the advantage of high reliability in many level IGBT driving field.

Description

A kind of many level IGBT drive circuit
Technical field
The utility model relates to power electronics, particularly relates to a kind of low cost many level IGBT drive circuit.。
Background technology
At present, along with the progress of semiconductor technology, a large amount of power electronic equipment being core with full-controlled switch device (IGBT) is widely used in electric power variation application scenarios such as household electrical appliances, industry, automobile and military affairs.
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, the compound full-control type voltage driven type power semiconductor be made up of BJT (double pole triode) and MOS (insulating gate type field effect tube), has the advantage of the high input impedance of MOSFET and low conduction voltage drop two aspect of GTR concurrently.GTR saturation pressure reduces, and current carrying density is large, but drive current is larger; MOSFET driving power is very little, and switching speed is fast, but conduction voltage drop is large, and current carrying density is little.
IGBT combines the advantage of above two kinds of devices, and driving power is little and saturation pressure reduces.Being applicable to very much being applied to direct voltage is that 600V and above converter system are as fields such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, Traction Drives.
Along with people are to the pursuit of electric power variation efficiency and high-power, the development of many level IGBT technology also becomes a flash point increasingly.Many level IGBT due to the increase of switching tube, its driver design industry comparatively complicated, the cost of driver also occupies very important.In traditional many level driving circuits scheme, have that the required number of power sources of drive circuit input is large, circuit is complicated, failure rate is high, drive circuit volume large, high in cost of production problem.
Utility model content
The utility model for existing product shortcoming and propose, provide and a kind ofly can be applied in the low cost of many level IGBT Topology Driven, the drive circuit of high reliability.
It is as follows that the utility model solves the problems of the technologies described above taked technical scheme:
A kind of many level IGBT drive circuit, comprising: DC-isolation power circuit, for generation of the DC power supply of the two-way generating positive and negative voltage of isolation, is connected respectively with the first IGBT drive circuit with the power supply input of the second IGBT drive circuit;
First IGBT drive circuit and the second IGBT drive circuit, wherein, the PWM input of described first IGBT drive circuit is by contact pin pin and introduce from outside, exporting the G pole and E pole that connect IGBT, opening and shutoff for driving an IGBT; The PWM input of the second IGBT drive circuit is by contact pin pin and introduce from outside, and export G pole and the E pole of connection the 2nd IGBT, for driving the 2nd IGBT to open and shutoff, and described second IGBT drive circuit is identical with the first IGBT drive circuit.
Preferably, described DC-isolation power circuit specifically comprises: soft startup circuit for power supply (11), controller UC2845 circuit (12), pulse transformer T1 circuit (13) and power supply output filter circuit (14);
Wherein, before soft startup circuit for power supply (11) is located at controller UC2845 circuit (12), for by making reference voltage slowly rise to designated value to capacitor charging; Described controller UC2845 circuit (12), for generation of PWM waveform; Described pulse transformer circuit T1(13), for the pulse current according to described PWM waveform generation equal proportion; Described electric source filter circuit (14), for by described pulse transformer circuit T1(13) pulse voltage that produces carries out low-pass filtering.
Preferably, described soft startup circuit for power supply (11) specifically comprises: resistance R5, R3, diode D3, D5 and electric capacity C7, the while of the anode of diode D5 and resistance R5,1 pin is held in the compensation of connection control device, the negative electrode of D5 is connected the positive pole of electric capacity C7 with the anode of D3, the other end ground connection of electric capacity C7, resistance R3 is also connected on D3.
Preferably, described controller UC2845 circuit (12) specifically comprises: controller UC2845 and peripheral circuit, described peripheral circuit comprises: the oscillating circuit be made up of oscillation resistance R2 and electric capacity C12, wherein, 8 pin of the 1 termination UC2845 of resistance R2,4 pin of 2 termination UC2845,4 pin one end ground connection of C12 mono-termination UC2845, the Voltage Feedback pin 2 of controller and current feedback pin 3 are by resistance R7 and R8 ground connection.
Preferably, described pulse transformer T1 circuit (13) comprising: pulse transformer T1 and peripheral components, described peripheral components comprises: NPN triode Q1 and PNP triode Q2, resistance R1, R9, electric capacity C6, C14, the former limit of transformer connects the E pole of triode Q1 and the C pole of Q2, wherein, resistance R1, R9 connect the C pole of Q1 and the E pole of Q2 respectively, its other end meets VCC and GND respectively, resistance R6 and C6 is also connected between the B pole of Q1 and Q2 and 6 pin of controller, and diode D8 is connected between controller 6 pin and GND.
Preferably, described power supply output filter circuit (14) comprising:
Two-way is output filter circuit independently, first via electric source filter circuit comprises electric capacity C1, C2, C3, C4, C5, resistance R4, diode D2, D4 and voltage-stabiliser tube D1, electric capacity C2 mono-end are connected on transformer secondary, between the anode that the other end is connected on diode D2 and D4 and negative electrode, electric capacity C1, C3 and D1 are in parallel, and C4, C5 and R4 parallel connection is finally connected afterwards;
The anode that the negative pole that the negative electrode that the positive pole of C1 meets diode D2 forms positive direct-current power vd 1, C4 meets diode D4 forms the mid point formation power supply zero potential VN1 of negative DC power supply VS1, electric capacity C1 and C4;
Described second road electric source filter circuit, specifically comprises: comprise electric capacity C10, C8, C13, C11, C15, resistance R10, diode D7, D9 and voltage-stabiliser tube D6, wherein, electric capacity C10 mono-end is connected on transformer secondary, between the anode that the other end is connected on diode D7 and D9 and negative electrode.Electric capacity C8, C11 and D7 are in parallel, and C13, C15 and R10 parallel connection is finally connected afterwards.
Preferably, described first IGBT drive circuit, specifically comprise: optical couple isolation drive circuit (21) and recommend output driving circuit (22), wherein, described optical couple isolation drive circuit (21), for the pwm signal of input is carried out Phototube Coupling, its isolation signals produced drives recommends output triode circuit (22), makes triode ON or the cut-off of recommending output driving circuit (22).
Preferably, described optical couple isolation drive circuit (21), comprise: optocoupler driver HCPL3120(U2), resistance R12, R13, R14, diode D13 and electric capacity C16, resistance R12 mono-termination outside input pwm signal, resistance R14, one end ground connection after C16 and D13 parallel connection, the other end of a termination R12.2 pin connecting resistance R13 of driver, 3 pin ground connection, another termination R12 of R13.
Preferably, described output driving circuit of recommending comprises: NPN triode Q3, PNP triode Q5, diode D10, D11, resistance R11, electric capacity C17, and electric capacity C17 is connected in parallel between the G pole of exterior I GBT and E pole, diode D10 is connected between power vd 1 and G pole, and the G pole and the triode that are connected on IGBT after R11 and D11 parallel connection are recommended between output.
After the utility model takes such scheme, this drive circuit only needs single supply to input, and the input of two-way independence PWM drive singal can complete the function to the IGBT on ground does not carry out malleation driving conducting altogether, negative pressure drives shutoff, has good technique effect.
Other features and advantages of the utility model will be set forth in the following description, and, partly become apparent from specification, or understand by implementing the utility model.The purpose of this utility model and other advantages realize by structure specifically noted in write specification, claims and accompanying drawing and obtain.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the utility model is described in detail, to make above-mentioned advantage of the present utility model definitely.
Fig. 1 is the schematic diagram of DC-isolation power circuit in the utility model many level IGBT drive circuit;
The schematic diagram of the first and second IGBT drive circuit in Fig. 2 the utility model many level IGBT drive circuit.
Embodiment
It is as follows that the utility model realizes the technical scheme that above-mentioned purpose takes:
The utility model many level IGBT drive circuit, principle divides two parts as depicted in figs. 1 and 2.
DC-isolation power circuit as shown in Figure 1, soft startup circuit for power supply 11 comprises resistance R5, R3, diode D3, D5 and electric capacity C7, the while of the anode of diode D5 and resistance R5,1 pin is held in the compensation of connection control device, the negative electrode of D5 is connected the positive pole of electric capacity C7 with the anode of D3, the other end ground connection of electric capacity C7, resistance R3 is also connected on D3.The peripheral circuit 12 of controller UC2845 is by oscillation resistance R2, electric capacity C12 forms oscillating circuit, 8 pin of the 1 termination UC2845 of resistance R2,4 pin of 2 termination UC2845,4 pin one end ground connection of C12 mono-termination UC2845, the Voltage Feedback pin 2 of controller and current feedback pin 3 are by resistance R7 and R8 ground connection.Pulse transformer T1 peripheral components 13 has NPN triode Q1 and PNP triode Q2, resistance R1, R9, electric capacity C6, C14, and the former limit of transformer connects the E pole of triode Q1 and the C pole of Q2.Resistance R1, R9 connect the C pole of Q1 and the E pole of Q2 respectively, and its other end meets VCC and GND respectively.Resistance R6 and C6 is also connected between the B pole of Q1 and Q2 and 6 pin of controller.Diode D8 is connected between controller 6 pin and GND.Power supply output filter circuit 14 comprises two-way independently output filter circuit, first via electric source filter circuit comprises electric capacity C2, C2, C4, C3, C5, resistance R4, diode D2, D4 and voltage-stabiliser tube D1. electric capacity C2 mono-end are connected on transformer secondary, between the anode that the other end is connected on diode D2 and D4 and negative electrode.Electric capacity C1, C3 and D1 are in parallel, and C4, C5 and R4 parallel connection is finally connected afterwards.The positive pole of C1 connects the negative electrode formation positive direct-current power vd 1 of diode D2, the negative pole of C4 meets the negative DC power supply VS1 of anode formation of diode D4, the mid point of electric capacity C1 and C4 forms power supply zero potential VN1. second road electric source filter circuit and comprises electric capacity C10, C8, C13, C11, C15, resistance R10, diode D7, D9 and voltage-stabiliser tube D6, connected mode is identical with the first electric source filter circuit.
First and second IGBT drive circuit as shown in Figure 2, comprise optical couple isolation drive circuit 21 and recommend output driving circuit 22, optical couple isolation drive circuit comprises optocoupler driver HCPL3120(U2), resistance R12, R13, R14, diode D13 and electric capacity C16, resistance R12 mono-termination outside input pwm signal, resistance R14, one end ground connection after C16 and D13 parallel connection, the other end of a termination R12.2 pin connecting resistance R13 of driver, 3 pin ground connection, another termination R12 of R13.Recommend output driving circuit and comprise NPN triode Q3, PNP triode Q5, diode D10, D11, resistance R11, electric capacity C17.Electric capacity C17 is connected in parallel between the G pole of exterior I GBT and E pole, and diode D10 is connected between power vd 1 and G pole, and the G pole and the triode that are connected on IGBT after R11 and D11 parallel connection are recommended between output.
The principle of low cost many level IGBT drive circuit of the present utility model is as follows:
The pressure feedback port of PWM controller and current feedback terminal are passed through grounding through resistance, makes Voltage Feedback and current feedback be zero, make the internal regulator of controller export forward saturated.Choose appropriate R2 and C12 parameter, make cycle of oscillation between 1us to 1.25us, according to the device handbook of controller, the maximum making the R2 resistance chosen meet PWM duty ratio is not more than 42%, and namely fixing PWM duty ratio is 40%.The no-load voltage ratio N of pulse transformer T1 reasonable in design, comes every inner direct current at transformer primary side and secondary series capacitance.The pulse voltage amplitude produced on vice-side winding is like this N former edge-impulse voltage doubly.Pulse voltage can obtain direct voltage (VD1-VS1) through diode rectification, this direct voltage is supported by capacitances in series, to upper DC Capacitance parallel connection voltage stabilizing didoe, i.e. Absorbable organic halogens upper DC voltage, so namely obtain stable positive and negative DC power supply.The voltage of this DC power supply is uniquely determined by the duty ratio of PWM controller and the winding of transformer, and the ratio of positive and negative DC power supply is uniquely determined by voltage-stabiliser tube.
Obtaining positive negative dc voltage is drive the prerequisite of IGBT to regulate, when drive singal is enable, and the inner triode ON of light-coupled isolation driving tube, the base stage of recommending output triode is made to be high level, the output of namely recommending triode is positive voltage, and the Vge of IGBT is high level, drives IGBT conducting.When drive singal is not enable, the NPN triode Q3 in push-pull circuit ends, PNP triode Q5 conducting, exports negative voltage, drives IGBT cut-off.
The utility model beneficial effect is compared with prior art:
The utility model is by the Voltage Feedback of controller and current feedback ground connection, controller is made to export the PWM ripple of fixed frequency and duty ratio to drive triode, decrease feedback circuit, decrease the adjustment vibration that feedback regulation causes, make structure more simple, the stable of output voltage is realized by voltage-stabiliser tube, the voltage desired by output is realized by the winding of Rational choice transformer, greatly reduce the quantity of peripheral control device, thus can improve reliability, make PCB cloth board size less, save cost.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, although be described in detail the utility model with reference to previous embodiment, for a person skilled in the art, it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.

Claims (8)

1. the IGBT drive circuit of level more than, is characterized in that, comprising: DC-isolation power circuit, for generation of the DC power supply of the two-way generating positive and negative voltage of isolation, is connected respectively with the first IGBT drive circuit with the power supply input of the second IGBT drive circuit;
First IGBT drive circuit and the second IGBT drive circuit, wherein, the PWM input of described first IGBT drive circuit is by contact pin pin and introduce from outside, exporting the G pole and E pole that connect IGBT, opening and shutoff for driving an IGBT; The PWM input of the second IGBT drive circuit is by contact pin pin and introduce from outside, export G pole and the E pole of connection the 2nd IGBT, open and shutoff for driving the 2nd IGBT, and described second IGBT drive circuit specifically comprises with the identical described DC-isolation power circuit of the first IGBT drive circuit: soft startup circuit for power supply (11), controller UC2845 circuit (12), pulse transformer T1 circuit (13) and power supply output filter circuit (14);
Wherein, before soft startup circuit for power supply (11) is located at controller UC2845 circuit (12), for by making reference voltage slowly rise to designated value to capacitor charging; Described controller UC2845 circuit (12), for generation of PWM waveform; Described pulse transformer circuit T1(13), for the pulse current according to described PWM waveform generation equal proportion; Described electric source filter circuit (14), for by described pulse transformer circuit T1(13) pulse voltage that produces carries out low-pass filtering.
2. many level IGBT drive circuit according to claim 1, it is characterized in that, described soft startup circuit for power supply (11) specifically comprises: resistance R5, R3, diode D3, D5 and electric capacity C7, the while of the anode of diode D5 and resistance R5,1 pin is held in the compensation of connection control device, the negative electrode of D5 is connected the positive pole of electric capacity C7 with the anode of D3, the other end ground connection of electric capacity C7, and resistance R3 is also connected on D3.
3. many level IGBT drive circuit according to claim 1, it is characterized in that, described controller UC2845 circuit (12) specifically comprises: controller UC2845 and peripheral circuit, described peripheral circuit comprises: the oscillating circuit be made up of oscillation resistance R2 and electric capacity C12, wherein, 8 pin of the 1 termination UC2845 of resistance R2,4 pin of 2 termination UC2845,4 pin one end ground connection of C12 mono-termination UC2845, the Voltage Feedback pin 2 of controller and current feedback pin 3 are by resistance R7 and R8 ground connection.
4. many level IGBT drive circuit according to claim 1, it is characterized in that, described pulse transformer T1 circuit (13) comprising: pulse transformer T1 and peripheral components, described peripheral components comprises: NPN triode Q1 and PNP triode Q2, resistance R1, R9, electric capacity C6, C14, the former limit of transformer connects the E pole of triode Q1 and the C pole of Q2, wherein, resistance R1, R9 connects the C pole of Q1 and the E pole of Q2 respectively, its other end meets VCC and GND respectively, resistance R6 and C6 is also connected between the B pole of Q1 and Q2 and 6 pin of controller, diode D8 is connected between controller 6 pin and GND.
5. many level IGBT drive circuit according to claim 1, is characterized in that, described power supply output filter circuit (14) comprising:
Two-way is output filter circuit independently, first via electric source filter circuit comprises electric capacity C1, C2, C3, C4, C5, resistance R4, diode D2, D4 and voltage-stabiliser tube D1, electric capacity C2 mono-end are connected on transformer secondary, between the anode that the other end is connected on diode D2 and D4 and negative electrode, electric capacity C1, C3 and D1 are in parallel, and C4, C5 and R4 parallel connection is finally connected afterwards;
The anode that the negative pole that the negative electrode that the positive pole of C1 meets diode D2 forms positive direct-current power vd 1, C4 meets diode D4 forms the mid point formation power supply zero potential VN1 of negative DC power supply VS1, electric capacity C1 and C4;
Second road electric source filter circuit, specifically comprise: comprise electric capacity C10, C8, C13, C11, C15, resistance R10, diode D7, D9 and voltage-stabiliser tube D6, wherein, electric capacity C10 mono-end is connected on transformer secondary, between the anode that the other end is connected on diode D7 and D9 and negative electrode, electric capacity C8, C11 and D7 are in parallel, and C13, C15 and R10 parallel connection is finally connected afterwards.
6. many level IGBT drive circuit according to claim 1, it is characterized in that, described first IGBT drive circuit, specifically comprise: optical couple isolation drive circuit (21) and recommend output driving circuit (22), wherein, described optical couple isolation drive circuit (21), for carrying out Phototube Coupling by the pwm signal of input, its isolation signals produced drives recommends output triode circuit (22), makes triode ON or the cut-off of recommending output driving circuit (22).
7. many level IGBT drive circuit according to claim 6, is characterized in that, described optical couple isolation drive circuit (21), comprise: optocoupler driver HCPL3120(U2), resistance R12, R13, R14, diode D13 and electric capacity C16, resistance R12 mono-termination outside input pwm signal, resistance R14, one end ground connection after C16 and D13 parallel connection, the other end of a termination R12,2 pin connecting resistance R13 of driver, 3 pin ground connection, another termination R12 of R13.
8. many level IGBT drive circuit according to claim 7, it is characterized in that, described output driving circuit of recommending comprises: NPN triode Q3, PNP triode Q5, diode D10, D11, resistance R11, electric capacity C17, and electric capacity C17 is connected in parallel between the G pole of exterior I GBT and E pole, diode D10 is connected between power vd 1 and G pole, and the G pole and the triode that are connected on IGBT after R11 and D11 parallel connection are recommended between output.
CN201420227873.1U 2014-05-06 2014-05-06 A kind of many level IGBT drive circuit Expired - Fee Related CN204046407U (en)

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106849649A (en) * 2016-12-29 2017-06-13 江苏中科君芯科技有限公司 The IGBT driving power supplies topology of regulation can be independently set
CN107204708A (en) * 2017-05-18 2017-09-26 深圳市禾望电气股份有限公司 A kind of positive-negative power generation circuit and method for active switching devices
CN108199585A (en) * 2018-01-15 2018-06-22 深圳市三行技术有限公司 A kind of driving power circuit
CN110492768A (en) * 2019-08-13 2019-11-22 苏州格远电气有限公司 Rectifier circuit
CN110534323A (en) * 2019-09-27 2019-12-03 山东广域科技有限责任公司 The three-phase transformer of on-load voltage regulation driving switch circuit and the application switching circuit
CN111628636A (en) * 2019-02-28 2020-09-04 中车株洲电力机车研究所有限公司 Driving device suitable for parallel connection of IGBTs in converter
CN111884520A (en) * 2020-08-03 2020-11-03 西安许继电力电子技术有限公司 Driving power supply circuit and driving power supply thereof
CN112564457A (en) * 2019-09-10 2021-03-26 中车株洲电力机车研究所有限公司 Current transformation system and power supply circuit of IGBT driving device
CN112803724A (en) * 2021-01-06 2021-05-14 思源清能电气电子有限公司 Positive-pressure turn-on and negative-pressure turn-off IGBT (insulated Gate Bipolar transistor) driving circuit
CN113644812A (en) * 2021-08-10 2021-11-12 海盐理想电子科技股份有限公司 Single-power-supply IGBT negative-pressure driving circuit
CN114301266A (en) * 2021-12-30 2022-04-08 江苏斯菲尔电气股份有限公司 APF drive circuit with temperature protection
CN117748936A (en) * 2024-02-19 2024-03-22 成都麦特斯科技有限公司 Low-power consumption boost system

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106849649A (en) * 2016-12-29 2017-06-13 江苏中科君芯科技有限公司 The IGBT driving power supplies topology of regulation can be independently set
CN107204708B (en) * 2017-05-18 2024-02-27 深圳市禾望电气股份有限公司 Positive and negative power supply generation circuit and method for active switching device
CN107204708A (en) * 2017-05-18 2017-09-26 深圳市禾望电气股份有限公司 A kind of positive-negative power generation circuit and method for active switching devices
CN108199585A (en) * 2018-01-15 2018-06-22 深圳市三行技术有限公司 A kind of driving power circuit
CN111628636A (en) * 2019-02-28 2020-09-04 中车株洲电力机车研究所有限公司 Driving device suitable for parallel connection of IGBTs in converter
CN111628636B (en) * 2019-02-28 2021-08-24 中车株洲电力机车研究所有限公司 Driving device suitable for parallel connection of IGBTs in converter
CN110492768A (en) * 2019-08-13 2019-11-22 苏州格远电气有限公司 Rectifier circuit
CN112564457A (en) * 2019-09-10 2021-03-26 中车株洲电力机车研究所有限公司 Current transformation system and power supply circuit of IGBT driving device
CN112564457B (en) * 2019-09-10 2021-09-21 中车株洲电力机车研究所有限公司 Current transformation system and power supply circuit of IGBT driving device
CN110534323A (en) * 2019-09-27 2019-12-03 山东广域科技有限责任公司 The three-phase transformer of on-load voltage regulation driving switch circuit and the application switching circuit
CN111884520A (en) * 2020-08-03 2020-11-03 西安许继电力电子技术有限公司 Driving power supply circuit and driving power supply thereof
CN112803724A (en) * 2021-01-06 2021-05-14 思源清能电气电子有限公司 Positive-pressure turn-on and negative-pressure turn-off IGBT (insulated Gate Bipolar transistor) driving circuit
CN113644812B (en) * 2021-08-10 2024-02-27 海盐理想电子科技股份有限公司 Single-power IGBT negative-pressure driving circuit
CN113644812A (en) * 2021-08-10 2021-11-12 海盐理想电子科技股份有限公司 Single-power-supply IGBT negative-pressure driving circuit
CN114301266A (en) * 2021-12-30 2022-04-08 江苏斯菲尔电气股份有限公司 APF drive circuit with temperature protection
CN114301266B (en) * 2021-12-30 2024-02-06 江苏斯菲尔电气股份有限公司 APF driving circuit with temperature protection
CN117748936A (en) * 2024-02-19 2024-03-22 成都麦特斯科技有限公司 Low-power consumption boost system
CN117748936B (en) * 2024-02-19 2024-04-26 成都麦特斯科技有限公司 Low-power consumption boost system

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