CN113644812B - Single-power IGBT negative-pressure driving circuit - Google Patents
Single-power IGBT negative-pressure driving circuit Download PDFInfo
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- CN113644812B CN113644812B CN202110915866.5A CN202110915866A CN113644812B CN 113644812 B CN113644812 B CN 113644812B CN 202110915866 A CN202110915866 A CN 202110915866A CN 113644812 B CN113644812 B CN 113644812B
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- 238000004804 winding Methods 0.000 claims abstract description 37
- 238000002955 isolation Methods 0.000 claims abstract description 34
- 239000003990 capacitor Substances 0.000 claims description 67
- 230000000087 stabilizing effect Effects 0.000 claims description 25
- 238000001914 filtration Methods 0.000 claims description 16
- 238000007599 discharging Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The invention provides a single-power IGBT negative-pressure driving circuit, which specifically comprises a main switch power IGBT driving power winding, an IGBT low-end power rectification filter circuit, an IGBT low-end negative-pressure generating circuit, an IGBT high-end power isolation generating circuit, an IGBT high-end power negative-pressure generating circuit, an IGBT high-end driving circuit and an IGBT low-end driving circuit.
Description
Technical Field
The invention relates to the field of IGBT driving, in particular to a single-power IGBT negative-pressure driving circuit.
Background
In the IGBT driving design, the single power driving technique has obvious advantages for some low power driving based on the consideration of cost and simplified driving power design, but the IGBT cannot be turned off quickly and reliably when the single power driving. Patent (cn201210299622. X) discloses a high-performance low-cost IGBT negative-pressure bootstrap driving circuit, which can generate negative pressure when turned off, but the magnitude of the negative pressure is related to the carrier frequency of PWM modulation pulses and PWM duty ratio, and the charging current of a filter capacitor generating the negative pressure is generated by an output pin of a driving optocoupler when outputting high level, so that the load of the driving optocoupler is increased.
Disclosure of Invention
In order to solve the technical problem that in the prior art, when an IGBT is driven by a single power supply, the invention provides a single power supply IGBT negative-pressure driving circuit.
Therefore, the single-power-supply IGBT negative-pressure driving circuit specifically comprises a main switch power supply IGBT driving power supply winding, an IGBT low-end power supply rectifying and filtering circuit, an IGBT low-end negative-pressure generating circuit, an IGBT high-end power supply isolation generating circuit, an IGBT high-end power supply negative-pressure generating circuit, an IGBT high-end driving circuit and an IGBT low-end driving circuit, wherein the main switch power supply IGBT driving power supply winding is connected with the IGBT low-end power supply rectifying and filtering circuit and the IGBT high-end power supply isolation generating circuit, the IGBT low-end power supply rectifying and filtering circuit is connected with the IGBT low-end negative-pressure generating circuit and the IGBT low-end driving circuit, and the IGBT high-end power supply isolation generating circuit is connected with the IGBT high-end power supply negative-pressure generating circuit and the IGBT high-end driving circuit.
Further, the main switching power supply IGBT driving power supply winding comprises a transformer Q1, the transformer Q1 comprises an IGBT winding, the output of the IGBT winding is divided into two paths, one path of the output is input into the IGBT low-end power supply rectifying and filtering circuit, and the other path of output is input into the IGBT high-end power supply isolation generating circuit.
Further, the output frequency range of the IGBT winding is 20 kHz-150 kHz, and the voltage amplitude range is 15V-30V.
Further, the low-end power supply rectifying and filtering circuit of the IGBT comprises a diode D1, a capacitor C1 and a capacitor C2, wherein the anode of the diode D1 is connected with the homonymous end of the IGBT winding, the capacitor C1 and the capacitor C2 are connected between the cathode of the diode D1 and the homonymous end of the IGBT winding in a parallel mode, rectification is performed through the diode D1, and filtering is performed through the capacitor C1 and the capacitor C2.
Further, the IGBT low-side negative pressure generating circuit includes a resistor R4, a zener diode Z1, a capacitor C3, and a capacitor C8, one end of the resistor R4 is connected to the cathode of the diode D1, the other end of the resistor R4 is connected to the cathode of the zener diode Z1, the anode of the zener diode Z1 is connected to the non-homonymous end of the IGBT winding, the capacitor C3 and the capacitor C8 are connected in parallel between the other end of the resistor R4 and the non-homonymous end of the IGBT winding, and the cathode of the zener diode Z1 is connected to the emitter of the IGBT.
Further, the voltage stabilizing value of the voltage stabilizing diode Z1 is 5V-15V, the value range of the capacitor C8 is 1-220 mu F, and the value range of the capacitor C3 is 0.1 mu F-1 mu F.
Further, the IGBT high-end power supply isolation generating circuit includes a resistor R9, a diode D2, an isolation transformer Q2, a diode D3, a capacitor C9, a capacitor C4, and a resistor R12, one end of the resistor R9 is connected to the homonymous end of the IGBT winding, the other end of the resistor R9 is connected to the anode of the diode D2, the cathode of the diode D2 is connected to the homonymous end of the primary coil of the isolation transformer Q2, the homonymous end of the secondary coil of the isolation transformer Q2 is connected to the anode of the diode D3, and the capacitor C9, the capacitor C4, and the resistor R12 are connected in parallel between the cathode of the diode D3 and the non-homonymous end of the secondary coil of the isolation transformer Q2.
Further, the IGBT high-side power supply negative voltage generating circuit includes a resistor R5, a zener diode Z2, and a capacitor C5, one end of the resistor R5 is connected to the cathode of the diode D3, the other end of the resistor R5 is connected to the cathode of the zener diode Z2, the anode of the zener diode Z2 is connected to the non-homonymous end of the secondary coil of the isolation transformer Q2, and the capacitor C5 is connected between the other end of the resistor R5 and the non-homonymous end of the secondary coil of the isolation transformer Q2, and the cathode of the zener diode Z2 is connected to the emitter of the IGBT.
Further, the voltage stabilizing value of the zener diode Z2 is 5v to 15v, and the value of the capacitor C5 is more than 1 μf.
Further, the high-end driving circuit of the IGBT comprises an optocoupler PC2, an output pin of the optocoupler PC2 is connected to a gate of the IGBT through a resistor R8, a resistor R11 performs charge discharging, and a capacitor C11 filters PWM output waveforms.
Further, the IGBT low-side driving circuit includes an optocoupler PC1, an output pin of the optocoupler PC1 is connected to a gate of the IGBT through a resistor R7, a resistor R10 performs charge discharging, and a capacitor C10 filters the PWM output waveform.
Compared with the prior art, the invention has the following beneficial effects:
1) The stability of the on positive voltage and the off negative voltage of the IGBT is ensured, the influence of the carrier wave and the duty ratio correlation of PWM modulation pulses is avoided, and the conduction of the upper bridge arm and the lower bridge arm of the IGBT caused by the Miller effect can be completely overcome;
2) The scheme is simple, the cost is low, and the method can be widely applied to IGBT driving of frequency converters and inverters.
Drawings
Fig. 1 is a schematic diagram of a single power IGBT negative voltage driving circuit according to an embodiment of the invention.
Detailed Description
For a clearer understanding of technical features, objects, and effects of the present invention, a specific embodiment of the present invention will be described with reference to the accompanying drawings.
The single-power-supply IGBT negative-pressure driving circuit comprises a main switch power supply IGBT driving power supply winding, an IGBT low-end power supply rectifying and filtering circuit, an IGBT low-end negative-pressure generating circuit, an IGBT high-end power supply isolation generating circuit, an IGBT high-end power supply negative-pressure generating circuit, an IGBT high-end driving circuit and an IGBT low-end driving circuit, wherein the main switch power supply IGBT driving power supply winding is connected with the IGBT low-end power supply rectifying and filtering circuit and the IGBT high-end power supply isolation generating circuit, the IGBT low-end power supply rectifying and filtering circuit is connected with the IGBT low-end negative-pressure generating circuit and the IGBT low-end driving circuit, and the IGBT high-end power supply isolation generating circuit is connected with the IGBT high-end power supply negative-pressure generating circuit and the IGBT high-end driving circuit.
The IGBT driving power winding of the main switching power supply comprises a transformer Q1 of a flyback power supply, the IGBT winding is a group of windings of the transformer Q1, the output frequency range of the IGBT winding is 20 kHz-150 kHz, the voltage amplitude range is 15V-30V, the output of the windings is divided into two paths, one path of the windings is input into an IGBT low-end power supply rectifying and filtering circuit, and the other path of windings is input into an IGBT high-end power supply isolation generating circuit.
The IGBT low-end power supply rectifying and filtering circuit comprises a diode D1, a capacitor C1 and a capacitor C2, wherein the anode of the diode D1 is connected with the homonymous end of an IGBT winding, the capacitor C1 and the capacitor C2 are connected between the cathode of the diode D1 and the non-homonymous end of the IGBT winding in a parallel mode, rectification is carried out through the diode D1, filtering is carried out through the capacitor C1 and the capacitor C2, and a processed signal is used as an IGBT low-end driving power supply.
The IGBT low-end negative pressure generating circuit comprises a resistor R4, a voltage stabilizing diode Z1, a capacitor C3 and a capacitor C8, wherein one end of the resistor R4 is connected with the cathode of the diode D1, the other end of the resistor R4 is connected with the cathode of the voltage stabilizing diode Z1, the anode of the voltage stabilizing diode Z1 is connected with the non-homonymous end of the IGBT winding, the capacitor C3 and the capacitor C8 are connected between the other end of the resistor R4 and the non-homonymous end of the IGBT winding in a parallel mode, the resistor R4 and the voltage stabilizing diode Z1 are connected in series to receive an IGBT low-end driving power supply, the voltage stabilizing value of the voltage stabilizing diode Z1 is 5V-15V, the capacitor C3 and the capacitor C8 are negative pressure filtering capacitors, the value range of the C8 is 1-220 mu F, the value range of the C3 is 0.1 mu F-1 mu F, and the cathode of the voltage stabilizing diode Z1 is connected to the emitter of the IGBT.
The IGBT high-end power supply isolation generating circuit comprises a resistor R9, a diode D2, an isolation transformer Q2, a diode D3, a capacitor C9, a capacitor C4 and a resistor R12, wherein one end of the resistor R9 is connected with the homonymous end of an IGBT winding, the other end of the resistor R9 is connected with the anode of the diode D2, the cathode of the diode D2 is connected with the homonymous end of the primary coil of the isolation transformer Q2, the homonymous end of the secondary coil of the isolation transformer Q2 is connected with the anode of the diode D3, and the capacitor C9, the capacitor C4 and the resistor R12 are connected between the cathode of the diode D3 and the non-homonymous end of the secondary coil of the isolation transformer Q2 in a parallel mode.
The IGBT high-end power supply negative voltage generating circuit comprises a resistor R5, a voltage stabilizing diode Z2 and a capacitor C5, wherein one end of the resistor R5 is connected with the cathode of a diode D3, the other end of the resistor R5 is connected with the cathode of the voltage stabilizing diode Z2, the anode of the voltage stabilizing diode Z2 is connected with the non-homonymous end of the secondary coil of the isolation transformer Q2, the capacitor C5 is connected between the other end of the resistor R5 and the non-homonymous end of the secondary coil of the isolation transformer Q2, the resistor R5 and the voltage stabilizing diode Z2 are connected in series so as to receive an IGBT high-end driving power supply, the voltage stabilizing value of the voltage stabilizing diode Z2 is 5-15V, the capacitor C5 is a negative voltage filter capacitor, the value of the negative voltage filter capacitor is more than 1 mu F, and the cathode of the voltage stabilizing diode Z2 is connected to the emitter of the IGBT.
The IGBT high-end driving circuit comprises an optocoupler PC2, an output pin of the optocoupler PC2 is connected to a gate of the IGBT through a resistor R8, a resistor R11 is used for discharging charges, and a capacitor C11 filters PWM output waveforms.
The IGBT low-end driving circuit comprises an optocoupler PC1, an output pin of the optocoupler PC1 is connected to a gate of the IGBT through a resistor R7, a resistor R10 is used for discharging charges, and a capacitor C10 filters PWM output waveforms.
The optocoupler PC1 and the optocoupler PC2 can be selected from TLP701 type high-speed optocouplers developed and produced by Toshiba corporation.
The single power supply IGBT negative pressure driving circuit provided by the invention can ensure the stability of the on positive voltage and the off negative voltage of the IGBT when the single power supply drives the IGBT, is not influenced by the carrier wave of PWM modulation pulses and the related effect of duty ratio, can completely overcome the conduction of the upper bridge arm and the lower bridge arm of the IGBT caused by the Miller effect, has a simple scheme and low cost, and can be widely used for the IGBT driving of a frequency converter and an inverter.
The foregoing description of the preferred embodiments of the present invention should not be construed as limiting the scope of the invention. It should be noted that equivalent changes to the solution of the present invention without departing from the design structure and principle of the present invention are considered as the protection scope of the present invention for those skilled in the art.
Claims (1)
1. The single-power IGBT negative-pressure driving circuit is characterized by comprising a main switch power IGBT driving power winding, an IGBT low-end power rectification filter circuit, an IGBT low-end negative-pressure generating circuit, an IGBT high-end power isolation generating circuit, an IGBT high-end power negative-pressure generating circuit, an IGBT high-end driving circuit and an IGBT low-end driving circuit, wherein the main switch power IGBT driving power winding is connected with the IGBT low-end power rectification filter circuit and the IGBT high-end power isolation generating circuit, the IGBT low-end power rectification filter circuit is connected with the IGBT low-end negative-pressure generating circuit and the IGBT low-end driving circuit, and the IGBT high-end power isolation generating circuit is connected with the IGBT high-end power negative-pressure generating circuit and the IGBT high-end driving circuit;
the IGBT driving power supply winding of the main switching power supply comprises a transformer Q1, wherein the transformer Q1 comprises an IGBT winding, the output of the IGBT winding is divided into two paths, one path of the output is input into the IGBT low-end power supply rectifying and filtering circuit, and the other path of the output is input into the IGBT high-end power supply isolation generating circuit;
the output frequency range of the IGBT winding is 20 kHz-150 kHz, and the voltage amplitude range is 15V-3;
the IGBT low-end power supply rectifying and filtering circuit comprises a diode D1, a capacitor C1 and a capacitor C2, wherein the anode of the diode D1 is connected with the homonymous end of the IGBT winding, the capacitor C1 and the capacitor C2 are connected between the cathode of the diode D1 and the non-homonymous end of the IGBT winding in a parallel manner, rectification is carried out through the diode D1, and filtering is carried out through the capacitor C1 and the capacitor C2;
the IGBT low-end negative pressure generating circuit comprises a resistor R4, a zener diode Z1, a capacitor C3 and a capacitor C8, wherein one end of the resistor R4 is connected with the cathode of the diode D1, the other end of the resistor R4 is connected with the cathode of the zener diode Z1, the anode of the zener diode Z1 is connected with the non-homonymous end of the IGBT winding, the capacitor C3 and the capacitor C8 are connected between the other end of the resistor R4 and the non-homonymous end of the IGBT winding in a parallel connection mode, and the cathode of the zener diode Z1 is connected to the emitter of the IGBT;
the voltage stabilizing value of the voltage stabilizing diode Z1 is 5V-15V, the value range of the capacitor C8 is 1-220 mu F, and the value range of the capacitor C3 is 0.1-1 mu F;
the IGBT high-end power supply isolation generating circuit comprises a resistor R9, a diode D2, an isolation transformer Q2, a diode D3, a capacitor C9, a capacitor C4 and a resistor R12, wherein one end of the resistor R9 is connected with the homonymous end of the IGBT winding, the other end of the resistor R9 is connected with the anode of the diode D2, the cathode of the diode D2 is connected with the homonymous end of the primary coil of the isolation transformer Q2, the homonymous end of the secondary coil of the isolation transformer Q2 is connected with the anode of the diode D3, and the capacitor C9, the capacitor C4 and the resistor R12 are connected between the cathode of the diode D3 and the non-homonymous end of the secondary coil of the isolation transformer Q2 in a parallel mode;
the IGBT high-end power supply negative voltage generating circuit comprises a resistor R5, a voltage stabilizing diode Z2 and a capacitor C5, wherein one end of the resistor R5 is connected with the cathode of the diode D3, the other end of the resistor R5 is connected with the cathode of the voltage stabilizing diode Z2, the anode of the voltage stabilizing diode Z2 is connected with the non-homonymous end of the secondary coil of the isolation transformer Q2, the capacitor C5 is connected between the other end of the resistor R5 and the non-homonymous end of the secondary coil of the isolation transformer Q2, and the cathode of the voltage stabilizing diode Z2 is connected to the emitter of the IGBT;
the voltage stabilizing value of the voltage stabilizing diode Z2 is 5V-15V, and the value of the capacitor C5 is more than 1 mu F;
the IGBT high-end driving circuit comprises an optocoupler PC2, wherein an output pin of the optocoupler PC2 is connected to a gate of the IGBT through a resistor R8, a resistor R11 performs charge discharging, and a capacitor C11 filters PWM output waveforms;
the IGBT low-end driving circuit comprises an optocoupler PC1, wherein an output pin of the optocoupler PC1 is connected to a gate of the IGBT through a resistor R7, a resistor R10 performs charge discharging, and a capacitor C10 filters PWM output waveforms.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110915866.5A CN113644812B (en) | 2021-08-10 | 2021-08-10 | Single-power IGBT negative-pressure driving circuit |
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| CN202110915866.5A CN113644812B (en) | 2021-08-10 | 2021-08-10 | Single-power IGBT negative-pressure driving circuit |
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| CN113644812B true CN113644812B (en) | 2024-02-27 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204046407U (en) * | 2014-05-06 | 2014-12-24 | 西安西驰电能技术有限公司 | A kind of many level IGBT drive circuit |
| CN209805786U (en) * | 2019-05-23 | 2019-12-17 | 四川科陆新能电气有限公司 | Novel driving circuit for IGBT |
| CN112803724A (en) * | 2021-01-06 | 2021-05-14 | 思源清能电气电子有限公司 | Positive-pressure turn-on and negative-pressure turn-off IGBT (insulated Gate Bipolar transistor) driving circuit |
-
2021
- 2021-08-10 CN CN202110915866.5A patent/CN113644812B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204046407U (en) * | 2014-05-06 | 2014-12-24 | 西安西驰电能技术有限公司 | A kind of many level IGBT drive circuit |
| CN209805786U (en) * | 2019-05-23 | 2019-12-17 | 四川科陆新能电气有限公司 | Novel driving circuit for IGBT |
| CN112803724A (en) * | 2021-01-06 | 2021-05-14 | 思源清能电气电子有限公司 | Positive-pressure turn-on and negative-pressure turn-off IGBT (insulated Gate Bipolar transistor) driving circuit |
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| CN113644812A (en) | 2021-11-12 |
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